DIODE 6790 Search Results

1N33A

Abstract: 1n250 diode 1N34* diode diode 1n34 1N254 1N255 "general diode corporation" 1N1117 1N339 1N348
Contextual Info: 3869720 G E N ER A L DIODE C O R P 860 00322 GENERAL DIODE CORP ñb D T'-Ö/'V/ D eT| 301^750 0000355 0 STUD MOUNTED SILICON POWER RECTIFIERS & TYPE \ IV \ \\ % 1N24S 1N248A, B 1N249 1N249A,B 1N250 DO-5 Do-5 Do-5 Do-5 Do-5 50 50 100 100 200 1N250A, B 1N253

8057 microcontroller

Abstract: adc 8038 30617 76075 Block Diagram of 8057 ad2870
Contextual Info: PRELIMINARY TECHNICAL DATA 3.3V, DUAL LOOP, 50Mbps to 3.3Gbps LASER DIODE DRIVER a ADN2870 Preliminary Technical Data FEATURES GENERAL DESCRIPTION Microcontroller Interface SFP and SFF MSA compliant 50Mbps to 3.3 Gbps operation Typical rise/fall-time 60 ps

PWSN0008DC-A

Abstract: RJK0206DPA
Contextual Info: Preliminary Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200 Power Switching Rev.2.00 Apr 27, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting

RJK0206DPA

Contextual Info: Preliminary Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200 Power Switching Rev.2.00 Apr 27, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting

TM108

Abstract: 1N223B 1N2268 TR301 TM69 1N245S 1N244B TM37 1N2227 1N2225
Contextual Info: 3869720 GENERAL DIODE CORP GE NE R AL DIO DE 86D 00327 D 7- o - r< CORP DE^I 3 0 ^ 7 2 0 0000327 T T STUD MOUNTED SILICON POWER RECTIFIERS . . . cont’d TYPE \ 1N2224A 1N2225 1N2225A 1N222S 1N222BA Do-4 Do-10 . Do-10 Do-4 . DO-4 1000 1000 1000 1200 1200

1NU7

Abstract: 1N2487 1N1492 1N2508 IN400T 1N1711 equivalent to 1N4001 1N1490 1N2484 1N20B2
Contextual Info: 386 9 7 2 0 GENERAL ~fiï 86D 0 0 3 1 7 DIODE CORP Ï Ë 3öbT?2Q 0D00317 h LE A D M O U N T ED SILICO N POW ER RECTIFIERS P' TYPE y \ % D t -° -a cont'd \ \ r1' | t IH > % 'S 1, •e 25 @ 25 1@ 25 25 @ 25 > 1@ 25 IN 599 1N599A 1N600 1N600A Oo-l Do-1 Oo-l

2N6789

Abstract: 25S1 2N6790
Contextual Info: JAN 0 5 1988 C v w l ^ f c SEMELAB LTD 37E D • ^ 0133107 000G307 SEM ELAB b ■ SNLB 1 2N 6789 2N 6790 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dim ensions in mm I 1 Î • FA ST SWITCHING f i.5 mox. i • MOTOR CONTROLS <_12.7_ mox PIN 1 -S o u rce

kpb 307

Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

IBGT

Abstract: 100V 100A Mosfet DIODE PN junction diode DIODE 6790 MOSFET 50V 100A
Contextual Info: XI’AN IR-PERI Company .2#6 7 PRELIMINARY ]HALF-BRODGE ^ HEXFET Power MOSFET A - A - PAK Features • • • • • • ! Advanced Process Technology Ultra Low On-Resistance #  Dynamic dv/dt Rating 175 C Operating Temperature o Fast Switching VDSS=100V

6790

Abstract: TO274 IRFPS3810 TO-274
Contextual Info: PD - 93912B IRFPS3810 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.009Ω G ID = 170A† S Description

Contextual Info: PD - 93912B IRFPS3810 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.009Ω G ID = 170A† S Description

Contextual Info: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A†

6790

Abstract: MOSFET 50V 100A IRFPS3810PBF
Contextual Info: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A†

IRFPS3810

Contextual Info: PD - 93912A IRFPS3810 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.009Ω G ID = 170A† S Description

Contextual Info: APT6010JFLL 600V 47A 0.100Ω POWER MOS 7 R FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT6010JLL 600V 47A 0.100Ω R POWER MOS 7 MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT6010B2LL APT6010LLL 600V 54A 0.100Ω R POWER MOS 7 MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

1548C

Abstract: APT6010B2FLL APT6010LFLL
Contextual Info: APT6010B2FLL APT6010LFLL 600V 54A 0.100Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT6010JFLL 600V 47A 0.100Ω POWER MOS 7 R FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT-6010

Contextual Info: APT6010B2FLL APT6010LFLL 600V 54A 0.100W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

Contextual Info: APT6010JFLL 600V 47A 0.100W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package

Contextual Info: APT6010B2LL APT6010LLL 600V 54A 0.100Ω R POWER MOS 7 MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A†

Diode 188

Contextual Info: APT6010JLL 600V 47A 0.100W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses