DIODE 647 Search Results

1N4448

Abstract: L4448
Contextual Info: L L 4448 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode Fast switching diode in MiniMELF case especially suited for automatic insertion. This diode is also available in other case styles including the DO-35 case with the type designation 1N4448.

IDG 600

Abstract: M61880FP 20P2N-A M61880
Contextual Info: M61880FP Laser Diode Driver/Controller REJ03F0068-0100Z Rev.1.0 Sep.19.2003 Description The M61880FP is a laser diode driver/controller that performs drive and laser power control of a type of semiconductor laser diode in which the semiconductor laser diode anode and monitoring photodiode cathode are connected to the stem.

DL-3147-021

Contextual Info: Ordering number : EN5861A DL-3147-021 Red Laser Diode DL-3147-021 Index Guided AlGaInP Laser Diode Overview Package Dimensions DL-3147-021 is index guided 645 nm Typ. AlGaInP laser diode with low threshold current. The low threshold current is achieved by a strained

laser barcode reader circuit

Abstract: DL-3147-041 DL3147-041
Contextual Info: Ordering number : EN5862A DL-3147-041 Red Laser Diode DL-3147-041 Index Guided AlGaInP Laser Diode Overview Package Dimensions DL-3147-041 is index guided 645 nm Typ. AlGaInP laser diode with low threshold current and high operating temperature. The low threshold current

DL-3147-141

Contextual Info: Ordering number : EN5863A DL-3147-141 -241 Red Laser Diode DL-3147-141(-241) Index Guided AlGaInP Laser Diode Overview Package Dimensions DL-3147-141(-241) is index guided 645 nm (Typ.) AlGaInP laser diode with low threshold current and high operating temperature. The low

1N SERIES DIODE

Abstract: 1A DIODE 1N bf 649 sb 649 a M6HZ ba 12300 M8HZ 1N645 S02MB1A RB1A
Contextual Info: mouldings a THOMSON-CSF moulages Three phase bridges Ponts triphasés + Single phase bridges Ponts monophasés + Parallel diode Series diode pairs pairs Bivalves Doubleurs VR •dsm 10 ms V RRM 'm is recom ­ mended V (V) (A) 100 200 50 80 150 250 380 In per diode

M66515FP

Abstract: m66515 20P2N-A Laser Diode driver making ld
Contextual Info: M66515FP Laser Diode Driver/Controller REJ03F0084-0100Z Rev.1.0 Sep.22.2003 Description The M66515 is a laser diode driver/controller that performs drive and controls the laser power control of a type of semiconductor laser diode the anode of which is connected, with the cathode of a photodiode for monitoring, to a stem

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

Y5 1N

Abstract: FS100R12PT4
Contextual Info: Technische Information / technical information FS100R12PT4 IGBT-Module IGBT-modules EconoPACK 4 Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / NTC EconoPACK™4 module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and

DL-3147-021

Contextual Info: Ordering number : ENN5861C Red Laser Diode DL-3147-021 DL-3147-021 Red Laser Diode Features Package Dimensions : 645 nm Typ. : Ith = 30 mA (Typ.) : Vop = 2.3 V (Typ.) : ø 5.6 mm ø4.4 ø3.55±0.1 ø1.6 Effective window diameter 1.0min. 1 3 Applications

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

OpNext

Abstract: opnext laser diode
Contextual Info: Opnext 642nm / 150mW Laser Diode HL6385DG Series World’s First Laser With High Output Power and Single Longitudinal Mode u u u Visible light sources for miniature display Low aspect ratio Φ5.6mm Package High Output Power and Single Longitudinal Mode Laser Diode

DIODE mv 0435

Abstract: HSB88WS mopv
Contextual Info: HSB88WS Silicon Schottky Barrier Diode for Balanced Mixer REJ03G0589-0400 Previous: ADE-208-026C Rev.4.00 Apr 05, 2005 Features • • • • Small ∆VF and ∆C. Good for surface mounting on printed circuit board. Each diode can be biased. Wideband operation.

HAT2218R

Abstract: HAT2218R-EL-E
Contextual Info: HAT2218R Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G0396-0300 Rev.3.00 Aug.23.2004 Features • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode

HAT2210R

Abstract: HAT2210RJ PRSP0008DD-A HAT2210RJ-EL-E
Contextual Info: HAT2210R, HAT2210RJ Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G0578-0300 Rev.3.00 Mar.15.2005 Features • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode

marking A3 Taiwan semiconductor

Abstract: B2 Zener Zener IT 243 REJ03G0043-0300Z a3 6 zener B1 5.6 zener B2 marking code Zener B1.66 A211-1
Contextual Info: HZU-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0043-0300Z Rev.3.00 Jul.28.2004 Features • • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage and low zener impedance.

Contextual Info: HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching REJ03G0597-0200 Previous: ADE-208-730A Rev.2.00 Apr 12, 2005 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.

Contextual Info: HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching REJ03G0597-0200 Previous: ADE-208-730A Rev.2.00 Apr 12, 2005 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.

HSB0104YP

Abstract: PTSP0004ZB-A SC-82
Contextual Info: HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching REJ03G0597-0200 Previous: ADE-208-730A Rev.2.00 Apr 12, 2005 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.

6G zener diode

Abstract: HZU8.2G HZU10G HZU12G PTSP0002ZA-A ADE-208-617
Contextual Info: HZU-G Series Silicon Epitaxial Planar Zener Diode for Surge Absorb REJ03G1205-0200 Previous: ADE-208-617A Rev.2.00 Sep 14, 2005 Features • Zener diode for surge absorb suitable for IEC 1000-4-2 and 5 to 10V products are available. • Ultra small Resin Package (URP) is suitable for surface mount design.

HZS7L diode

Abstract: HZS6A2L II A2 zener diode c2 zener renesas ADE-208-121A HZS11L BAY 87 diode HZS15L HZS16L HZS20L
Contextual Info: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0166-0200Z Previous: ADE-208-121A Rev.2.00 Jan.06.2004 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

SILICON PLANAR zener diode DO-35

Abstract: BAY 73 diode B2 Zener hz30 hz6a MARK b3 zener diode
Contextual Info: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0182-0200Z Previous: ADE-208-118A Rev.2.00 Mar.11.2004 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized

Contextual Info: Red Laser Diode PL-3147-041_ DL-3147-041 is index guided 645 nm Typ. AIGalnP laser diode with low threshold current and high operating temperature. The low threshold current and high operating temperature are achieved by a strained multiple quantum well active layer. DL-3147041 is suitable for applications such as bar-code reader, optical disc systems and

Chiller

Abstract: 532 nm laser diode Nd-yag NL220 invisible TEM00 c 10 ph diode diode marking 355 Tokyo Instruments
Contextual Info: S E R I E S HIGH ENERGY Diode Pumped Q-switched Nd:YAG Lasers FEATURES m 10 mJ at 1064 nm m 1 kHz repetition rate m High pulse energy stability m TEM00 shape beam m PIV version is available m Simple and robust all solid Diode pumped NL220 series lasers development as well as industrial