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    DIODE 630 Search Results

    DIODE 630 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet
    SF Impression Pixel

    DIODE 630 Price and Stock

    Lumberg Automation

    Lumberg Automation GDM 3011 J 6-48V RHP w/ DIODE

    Sensor Cables / Actuator Cables
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GDM 3011 J 6-48V RHP w/ DIODE 37
    • 1 $24.12
    • 10 $20.50
    • 100 $18.11
    • 1000 $17.53
    • 10000 $17.53
    Buy Now

    Lumberg Automation GDM 3009 J W/IN4007 DIODE ME

    Sensor Cables / Actuator Cables
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GDM 3009 J W/IN4007 DIODE ME 4
    • 1 $8.25
    • 10 $8.06
    • 100 $7.64
    • 1000 $6.84
    • 10000 $6.84
    Buy Now

    DIODE 630 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: US-Lasers: 635nm-5mW - Red Laser Diode and Red Diode Laser Module Page 1 of 2 US-Lasers: 635nm-5mW - Red Laser Diode and Red Diode Laser Module Links to Laser Diode & Laser Module Configurations and Specifications >>>>>>>>>> Laser Diodes Laser Diode Module Micro Laser Module


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    635nm-5mwn635-5nm635-5epm635-5+3mm635-5mm635nmcom/mmd635nm5m PDF

    NM635-5

    Abstract: Laser module 635nm-5mW RED laser diode operating Temperature laser diode 12 pin red diode laser EPM635-5 MM635-5 N635-5 US-Lasers
    Contextual Info: US-Lasers: 635nm-5mW - Red Laser Diode and Red Diode Laser Module Page 1 of 2 US-Lasers: 635nm-5mW - Red Laser Diode and Red Diode Laser Module Links to Laser Diode & Laser Module Configurations and Specifications >>>>>>>>>> Laser Diodes Laser Diode Module Micro Laser Module


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    635nm-5mwn635-5nm635-5epm635-5+8mm635-5mm635nmcom/mmd635nm5mlaser modulered laser diode operating temperaturelaser diode 12 pinred diode laserus-lasers PDF

    Contextual Info: U-LD-630543A UNION OPTRONICS CORP. 635nm Laser Diode 635nm Red Laser Diode U-LD-630543A •Specifications 1 Device: (2) Structure: Laser Diode TO-18(ψ5.6mm),with no glass cap ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃) Parameter


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    u-ld-630543a635nm PDF

    635nm laser diode

    Abstract: U-LD-630541A laser diode 635nm PIN laser DIODE
    Contextual Info: U-LD-630541A UNION OPTRONICS CORP. 635nm Laser Diode 635nm Red Laser Diode U-LD-630541A •Specifications 1 Device: (2) Structure: Laser Diode TO-18(ψ5.6mm),with Pb free cap ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃) Parameter


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    u-ld-630541a635nm635nm laser diodelaser diode 635nm+1pin laser diode PDF

    635nm

    Contextual Info: U-LD-630542A UNION OPTRONICS CORP. 635nm Laser Diode 635nm Red Laser Diode U-LD-630542A •Specifications 1 Device: (2) Structure: Laser Diode TO-18(ψ5.6mm),with Pb cap ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃) Parameter Symbol


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    u-ld-630542a635nm PDF

    optron

    Abstract: Union
    Contextual Info: U-LD-630551A-preliminary UNION OPTRONICS CORP. 635nm Laser Diode 635nm Red Laser Diode U-LD-630551A-preliminary •Specifications 1 Device: (2) Structure: Laser Diode TO-18(ψ5.6mm),with Pb free cap ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)


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    u-ld-630551a-preliminary635nmoptronunion PDF

    laser diode bare chip

    Contextual Info: U-CP-6305123 UNION OPTRONICS CORP. 635nm Laser Diode Chips 635nm Red Laser Diode Chips U-CP-6305123 •Specifications 1 Size : (2) Device: (3) Structure: 250*300*100 m Laser diode bare chip Multi-step growth ■External dimensions(Unit : μm) P-electrode and N-electrode are both gold pads.


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    u-cp-6305123635nmlaser diode bare chip PDF

    635nm

    Abstract: red laser diode 635nm RED laser diode operating Temperature red diode laser 635nm laser modules D635 DIODE 630 laser diode 635nm lens laser diode
    Contextual Info: US-Lasers: 635nm-5mW - Red Laser Diode and Red Diode Laser Module Page 1 of 1 US-Lasers: 635nm-5mW - Red Laser Diode Back to Laser Diodes VISIBLE LASER DIODE DATA SHEET ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA for LASER DIODE z Index Guided MQW Structure


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    635nm-5mw635nmcom/d635nm5mred laser diode 635nm+7red laser diode operating temperaturered diode laser635nm laser modulesd635diode 630laser diode 635nmlens laser diode PDF

    BAP51-02

    Abstract: BP317
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.


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    m3d319bap51-02od523mam405+2125004/00/02/pp6bp317 PDF

    109 DIODE

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.


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    m3d319bap50-02od523mam405+2613512/01/pp8109 diode PDF

    25-12io8

    Abstract: MDC 1200 DIODE mdc 40-14 MCO 1510 MCd 25-04 ABB thyristor modules ASEA thyristor mdc 55-04 hs 50 abb E72873
    Contextual Info: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-Module d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z5-Z3 Phase control Thyristor-Diode-Modules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor


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    k21-0120k21-01s0k21-0180k21-0265+11k41-0150c25-12io8mdc 1200diode mdc 40-14mco 1510mcd 25-04abb thyristor modulesasea thyristormdc 55-04hs 50 abbe72873 PDF

    Contextual Info: APC Laser Diode TM ADL-63054TA2 2007/06/21 ver 1.0 APC Laser Diode p p TM Perfect Solution For Auto Power Controlled Laser Diode By converting the external APC circuit board into an ASIC, we package the APC circuit into a traditional TO-can together with the laser chip. From now on, single package APC function


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    adl-63054ta2635nm PDF

    Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


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    stpsc10h065o-220acstpsc10h065dstpsc10h065di+3stpsc10h065b-trstpsc10h065g-trdocid023604 PDF

    Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


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    stpsc6h065o-220acstpsc6h065dstpsc6h065g-tr+1docid023247 PDF

    Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


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    stpsc6h065o-220acstpsc6h065dstpsc6h065di+3stpsc6h065b-trstpsc6h065g-trdocid023247 PDF

    Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


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    stpsc4h065o-220acstpsc4h065dstpsc4h065di+1docid023598 PDF

    Contextual Info: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-M odule d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z 5 -Z 3 Phase control Thyristor-Diode-M odules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor


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    PDF

    Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


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    stpsc8h065o-220acstpsc8h065dstpsc8h065di+3stpsc8h065b-trstpsc8h065g-trdocid023603 PDF

    hc4-dc12v

    Abstract: HC4-DC24V HC2-DC24V HC2-SS-K HC3-DC24V HC3-DC6V-D-F nichifu HC4-DC24V-D HC1-DC12V HC2-L-DC24V-D-F
    Contextual Info: HC Has built-in diode to absorb surge For use in semiconductor circuits HC RELAY WITH DIODE TYPE FOR DC FEATURES 1. The built-in diode absorbs surge voltage arising when the coil goes to the off state (for DC type). Diode characteristics; Reverse breakdown voltage: 1,000V,


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    25y-3n25y-3s25-3x1071-a+1325-3s25-3ta25-m3hc4-dc12vhc4-dc24vhc2-dc24vhc2-ss-khc3-dc24vhc3-dc6v-d-fnichifuhc4-dc24v-dhc1-dc12vhc2-l-dc24v-d-f PDF

    DIODE A6 sod110

    Abstract: sod110 package SOD-110 BA792 philips zener diode SOD110 BAS216 BAS221 BAT254 Zener Diode MARK 101 SOD323
    Contextual Info: Philips Semiconductors Comprehensive diode range: • Zener diodes • Schottky-barrier diode • Switching diodes • Band-switching diode SOD110 High-performance ceramic package www.semiconductors.philips.com V-packTM technology for higher power dissipation


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    od110innovat27scb63diode a6 sod110+9sod110 packagesod-110ba792philips zener diodesod110bas216bas221bat254zener diode mark 101 sod323 PDF

    triac tic 236

    Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
    Contextual Info: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD


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    1s28351s28361s28371s2838+161ss1231ss2201ss2211ss2221ss2232sa811atriac tic 236scr u 537mp25 transistortransistor su 312ga1l323 pin mini mold transistor2sj19fa114m2sa1611z 103 triac PDF

    ULTRAFAST RECTIFIER 16A 600V vf 1.7

    Abstract: APT6038BLL APT8DQ60K3CT APT8DQ60K3CTG
    Contextual Info: 600V 8A APT8DQ60K3CT APT8DQ60K3CTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode


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    apt8dq60k3ctapt8dq60k3ctgo-220ultrafast rectifier 16a 600v vf 1.7+1apt6038bll PDF

    SMD diode sg 46

    Abstract: SMD diode sg 03
    Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP50-03 PINNING FEATURES • Low diode capacitance PIN • Low diode forw ard resistance. DESCRIPTION 1 cathode 2 anode APPLICATIONS


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    bap50-03sca61smd diode sg 46smd diode sg 03 PDF

    ULTRAFAST RECTIFIER 16A 600V vf 1.7

    Abstract: transistor 4242 4242 transistor D 4242 diode 400V 4A APT6038BLL APT8DQ60K3 APT8DQ60K3G diode 8a 600v diode T B 8A
    Contextual Info: 600V 8A APT8DQ60K3 APT8DQ60K3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE K3 PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode


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    apt8dq60k3apt8dq60k3go-220ultrafast rectifier 16a 600v vf 1.7+7transistor 42424242 transistord 4242diode 400v 4aapt6038blldiode 8a 600vdiode t b 8a PDF