DIODE 630 Search Results
DIODE 630 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ12V |
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Zener Diode, 12 V, USC | Datasheet | ||
MUZ5V6 |
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Zener Diode, 5.6 V, USM | Datasheet | ||
CEZ6V8 |
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Zener Diode, 6.8 V, ESC | Datasheet |
DIODE 630 Price and Stock
Lumberg Automation GDM 3011 J 6-48V RHP w/ DIODESensor Cables / Actuator Cables |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GDM 3011 J 6-48V RHP w/ DIODE | 40 |
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Lumberg Automation GDM 3009 J W/IN4007 DIODE MESensor Cables / Actuator Cables |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GDM 3009 J W/IN4007 DIODE ME | 7 |
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DIODE 630 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: US-Lasers: 635nm-5mW - Red Laser Diode and Red Diode Laser Module Page 1 of 2 US-Lasers: 635nm-5mW - Red Laser Diode and Red Diode Laser Module Links to Laser Diode & Laser Module Configurations and Specifications >>>>>>>>>> Laser Diodes Laser Diode Module Micro Laser Module |
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635nm-5mW N635-5 NM635-5 EPM635-5 MM635-5 MM635nm com/mmd635nm5m | |
NM635-5
Abstract: Laser module 635nm-5mW RED laser diode operating Temperature laser diode 12 pin red diode laser EPM635-5 MM635-5 N635-5 US-Lasers
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635nm-5mW N635-5 NM635-5 EPM635-5 MM635-5 MM635nm com/mmd635nm5m NM635-5 Laser module RED laser diode operating Temperature laser diode 12 pin red diode laser EPM635-5 MM635-5 N635-5 US-Lasers | |
Contextual Info: U-LD-630543A UNION OPTRONICS CORP. 635nm Laser Diode 635nm Red Laser Diode U-LD-630543A •Specifications 1 Device: (2) Structure: Laser Diode TO-18(ψ5.6mm),with no glass cap ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃) Parameter |
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U-LD-630543A 635nm | |
635nm laser diode
Abstract: U-LD-630541A laser diode 635nm PIN laser DIODE
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U-LD-630541A 635nm 635nm laser diode U-LD-630541A laser diode 635nm PIN laser DIODE | |
635nmContextual Info: U-LD-630542A UNION OPTRONICS CORP. 635nm Laser Diode 635nm Red Laser Diode U-LD-630542A •Specifications 1 Device: (2) Structure: Laser Diode TO-18(ψ5.6mm),with Pb cap ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃) Parameter Symbol |
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U-LD-630542A 635nm | |
optron
Abstract: Union
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U-LD-630551A-preliminary 635nm optron Union | |
laser diode bare chipContextual Info: U-CP-6305123 UNION OPTRONICS CORP. 635nm Laser Diode Chips 635nm Red Laser Diode Chips U-CP-6305123 •Specifications 1 Size : (2) Device: (3) Structure: 250*300*100 m Laser diode bare chip Multi-step growth ■External dimensions(Unit : μm) P-electrode and N-electrode are both gold pads. |
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U-CP-6305123 635nm laser diode bare chip | |
635nm
Abstract: red laser diode 635nm RED laser diode operating Temperature red diode laser 635nm laser modules D635 DIODE 630 laser diode 635nm lens laser diode
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635nm-5mW 635nm com/d635nm5m 635nm red laser diode 635nm RED laser diode operating Temperature red diode laser 635nm laser modules D635 DIODE 630 laser diode 635nm lens laser diode | |
BAP51-02
Abstract: BP317
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M3D319 BAP51-02 OD523 MAM405 OD523) 125004/00/02/pp6 BAP51-02 BP317 | |
109 DIODEContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance. |
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M3D319 BAP50-02 OD523 MAM405 OD523) 613512/01/pp8 109 DIODE | |
25-12io8
Abstract: MDC 1200 DIODE mdc 40-14 MCO 1510 MCd 25-04 ABB thyristor modules ASEA thyristor mdc 55-04 hs 50 abb E72873
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K21-0120 K21-01S0 K21-0180 K21-0265 K41-0150C 25-12io8 MDC 1200 DIODE mdc 40-14 MCO 1510 MCd 25-04 ABB thyristor modules ASEA thyristor mdc 55-04 hs 50 abb E72873 | |
Contextual Info: APC Laser Diode TM ADL-63054TA2 2007/06/21 ver 1.0 APC Laser Diode p p TM Perfect Solution For Auto Power Controlled Laser Diode By converting the external APC circuit board into an ASIC, we package the APC circuit into a traditional TO-can together with the laser chip. From now on, single package APC function |
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ADL-63054TA2 ADL-63054TA2 635nm | |
Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC10H065 O-220AC O-220AC STPSC10H065D STPSC10H065DI STPSC10H065B-TR STPSC10H065G-TR DocID023604 | |
Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC6H065 O-220AC STPSC6H065D STPSC6H065G-TR DocID023247 | |
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Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC6H065 O-220AC O-220AC STPSC6H065D STPSC6H065DI STPSC6H065B-TR STPSC6H065G-TR DocID023247 | |
Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC4H065 O-220AC O-220AC STPSC4H065D STPSC4H065DI DocID023598 | |
Contextual Info: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-M odule d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z 5 -Z 3 Phase control Thyristor-Diode-M odules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor |
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Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC8H065 O-220AC O-220AC STPSC8H065D STPSC8H065DI STPSC8H065B-TR STPSC8H065G-TR DocID023603 | |
hc4-dc12v
Abstract: HC4-DC24V HC2-DC24V HC2-SS-K HC3-DC24V HC3-DC6V-D-F nichifu HC4-DC24V-D HC1-DC12V HC2-L-DC24V-D-F
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25Y-3N, 25Y-3S 25-3X, 1071-A 25-3S 25-3TA 25-M3 hc4-dc12v HC4-DC24V HC2-DC24V HC2-SS-K HC3-DC24V HC3-DC6V-D-F nichifu HC4-DC24V-D HC1-DC12V HC2-L-DC24V-D-F | |
DIODE A6 sod110
Abstract: sod110 package SOD-110 BA792 philips zener diode SOD110 BAS216 BAS221 BAT254 Zener Diode MARK 101 SOD323
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OD110 OD110 innovat27 SCB63 DIODE A6 sod110 sod110 package SOD-110 BA792 philips zener diode SOD110 BAS216 BAS221 BAT254 Zener Diode MARK 101 SOD323 | |
triac tic 236
Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
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1S2835 1S2836 1S2837 1S2838 1SS123 1SS220 1SS221 1SS222 1SS223 2SA811A triac tic 236 SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC | |
ULTRAFAST RECTIFIER 16A 600V vf 1.7
Abstract: APT6038BLL APT8DQ60K3CT APT8DQ60K3CTG
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APT8DQ60K3CT APT8DQ60K3CTG* O-220 O-220 ULTRAFAST RECTIFIER 16A 600V vf 1.7 APT6038BLL APT8DQ60K3CT APT8DQ60K3CTG | |
SMD diode sg 46
Abstract: SMD diode sg 03
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BAP50-03 SCA61 SMD diode sg 46 SMD diode sg 03 | |
ULTRAFAST RECTIFIER 16A 600V vf 1.7
Abstract: transistor 4242 4242 transistor D 4242 diode 400V 4A APT6038BLL APT8DQ60K3 APT8DQ60K3G diode 8a 600v diode T B 8A
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APT8DQ60K3 APT8DQ60K3G* O-220 O-220 ULTRAFAST RECTIFIER 16A 600V vf 1.7 transistor 4242 4242 transistor D 4242 diode 400V 4A APT6038BLL APT8DQ60K3 APT8DQ60K3G diode 8a 600v diode T B 8A |