DIODE 54 75 Search Results

DIODE RF DETECTOR

Abstract: "RF Power" MA40053 RF Power detector video amplifier MA40053-54 noise diode rf detector diode low power
Contextual Info: MA40053-54 SILICO SCHOTTKY DETECTOR DIODE PACKAGE STYLE 54 DESCRIPTION: The ASI MA40053-54 is a Silicon Schottky Detector Diode designed for use in Stripline, coaxial detectors and waveguides. FEATURES: • • High Sensitivity. Low Noise Figure. MAXIMUM RATINGS

Contextual Info: MA4883 MEDIUM BARRIER SCHOTTKY DIODE DESCRIPTION: PACKAGE STYLE 54 The ASI MA4883 is a Silicon Schottky Mixer Diode designed for use in Stripline and coaxial mixers and upconverters. FEATURES: • • High Reliability. Low Noise Figure. MAXIMUM RATINGS I 2.0 mA

hsch 3486 zero bias schottky diode

Abstract: HSCH-3486 MA4E928B ma4e928B-54 "zero-bias schottky diode" HSCH3486 20 GHz PIN diode zero bias schottky diode detector
Contextual Info: HSCH-3486 ZERO BIAS SCHOTTKY DIODE DESCRIPTION: The HSCH-3486 is a Silicon Zero Bias Schottky Barrier Diode Designed for High Sensitivity Detector and Low Starved Mixer Applications up to 10 GHz. FEATURES INCXLUDE: • Replacement for HSCH3486 and MA4E928B-54

Diode BAY 93

Contextual Info: BAY 93 'W Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Sehr Schnelle Schalter Applications: Very fast switches Abmessungen in mm Dimensions In mm »’»• KATHODE 01,9 CATHODE 0 0 ,5 8 Normgehäuse Case 54 A 2 DIN 41880 JEDEC DO 35

D15S120

Abstract: PG-TO220-2 PG-TO220 IDH15S120 JESD22 C15T
Contextual Info: IDH15S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 1200 600 V • No reverse recovery / No forward recovery QC 3.2 54 nC • Temperature independent switching behavior IF; TC< 130 °C

19T8

Abstract: 19t8 tube 6T8-5T8-19T8 6T8 tube ET-T893 180J rs tube general electric
Contextual Info: |ftjb 6T8 5T8 19T8 6 T 8 -5 T 8 -1 9 T 8 ET-T893 TRIPLE-DIODE TRIODE Page 1 8-54 TUBES DESCRIPTION AND RATING1 The 6T8 is a m iniature triple-diode, high-mu triode intended primarily for use as a combined AM detector, F M detector, and audio-frequency voltage

Contextual Info: C4D40120D–Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM = 1200 V IF; = 54 A TC<135˚C Qc Features • • • • • 260 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching

BYY53

Abstract: BYY53-75 BYY54 hermetic press-fit diode
Contextual Info: BYY53 / BYY54 25A Silicon Power Rectifier Diode Part no. Description The BYY53/54 are hermetically sealed 25Adiodes, which are available in different reverse voltage classes up to 1500V. The diodes can be delivered with limited forward voltage and reverse current differences for

ELECTRONIC BALLAST 1 T5 LAMP SCHEMATIC

Abstract: electronic ballast for fluorescent lighting t5 simple circuit diagram of electronic choke EF25 TRANSFORMER electronic ballast for fluorescent lighting t8 transistor Electronic ballast t5 ELECTRONIC BALLAST 2 LAMP SCHEMATIC IEC60081 IEC-60929 t8 ballast circuits
Contextual Info: AN2982 Application note 1 x 54 W T5 fluorescent lamp ballast in wide input voltage range using the L6585DE - STEVAL-ILB005V2 Introduction This application note describes the STEVAL-ILB005V2 demonstration board equipped with the L6585DE lighting controller, STD7NM50N MOSFETs and an STTH1L06 Shottky diode

Contextual Info: • fll3bb71 0Q05G55 Ô 54 SKiiP 292 G D L 170 - 472 WT Absolute Maximum Ratings Symbol Values Units 1700 1200 250 500 - 5 5 . . . + 150 3500 230 500 2160 23,4 V V A A A kA2s 18 30 75 - 2 5 . . . + 85 V V kV/jxs °C |Conditions 11 IGBT & Inve rse Diode V ces

Contextual Info: FX30KMJ-06 High-Speed Switching Use Pch Power MOS FET REJ03G1446-0200 Previous: MEJ02G0276-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : –60 V rDS(ON) (max) : 54 mΩ ID : –30 A Integrated Fast Recovery Diode (TYP.) : 55 ns

FX30KMJ-06

Contextual Info: FX30KMJ-06 High-Speed Switching Use Pch Power MOS FET REJ03G1446-0200 Previous: MEJ02G0276-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : –60 V rDS(ON) (max) : 54 mΩ ID : –30 A Integrated Fast Recovery Diode (TYP.) : 55 ns

A6S marking code

Contextual Info: SIEMENS BAS 16S Silicon Sw itching Diode Array • For high-speed switching applications • Internal galvanic isolated Diodes in one package Tape loading orientation Top View 6 54 n n n M arking on S O T -363 package ( f o r e xam ple W Is) co rre spo n ds to pin 1 o f device

Contextual Info: 30E • 7 * ^ 2 3 7 0031^54 1 ■ S G S - T H O M S O N G*fô mi(g¥lfMD(g§ S G 'T" ([ 2S3>'~_ BZW04-376BT S-THOMSON BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR DESCRIPTION Transient voltage suppressor diode especially use­ ful in protecting triacs. When occurs an overvoltage, the transil induces a

TILI53

Abstract: TIL111 TIL153 TIL154 TIL155 TIL156
Contextual Info: T IL I53, TILI 54. T IL I55 OPTOCOUPLERS SOOSO5O 0 2 4 9 1 . S E P T E M B E R —R E V IS E D D E C E M B E R 1 9 8 2 U L L IS T E D - F IL E # E 65085 GaAs-Diode Infrared Source Optically Coupled to a Silicon N-P-N Phototransistor Direct-Current Transfer Ratio , . . 10% to 50%

Contextual Info: 75 dB High Isolation SP4T PIN Diode Switch 6 GHz to 12 GHz, 2.5 dB Insertion Loss with SMA TECHNICAL DATA SHEET PE71S5004 Pasternack model PE71S5004 is a general purpose 6.0 GHz to 12.0 GHz single pole, four throw high isolation reflective switch. This switch offers 75 dB typical port-to-port isolation, and a typical insertion loss of 2.5 dB at room temperature. It has

TCD1254GFG(8Z)

Contextual Info: SKM 75GB063D 8% W PX YH+ / * 00 ,4&)5?20) 09)%2D2)@ Absolute Maximum Ratings Symbol Conditions IGBT GHF1 8Z W PX YH :H 8Z W NXO YH :H^_ ¥OO G NOO L 8%'0) W ]X YH ]X L NXO L a PO G 8Z W NPX YH NO f0 8%'0) W PX YH ]X L 8%'0) W gO YH XO L NXO L 8Z W NXO YH hhO

Contextual Info: SDA263—1 FAST RECOVERY f - « - - ° i 75 AMP SINGLE PHASE BRIDGE RECTIFIER ASSEMBLY • • • • • • • • • AVERAGE OUTPUT 75 AMPS PIV 50 - 1,000 VOLTS FAST RECOVERY, LESS THAN 200 NSEC.* ALUMINUM CASE CASE ELECTRICALLY INSULATED HERMETICALLY SEALED DIODE CELLS

Contextual Info: SEMiX 754GB128Ds Absolute Maximum Ratings Symbol Conditions IGBT  .  '+ , 1 .  0+ , 167   '+,-     !  % 0'(  23+ $   4( , 54( $ 4( $ :'(  0( >   '+ , +2+ $   4( , @4+ $ 4( $ @0( $ 2( $ 5( AAA B 0+(

Contextual Info: SEMiX 754GB128Ds Absolute Maximum Ratings Symbol Conditions IGBT  .  '+ , 1 .  0+ , 167   '+,-     !  % 0'(  23+ $   4( , 54( $ 4( $ :'(  0( >   '+ , +2+ $   4( , @4+ $ 4( $ @0( $ 2( $ 5( AAA B 0+(

truth table NAND gate 74

Abstract: 751A-02 3-input nand gate
Contextual Info: SN54/74LS12 TRIPLE 3-INPUT NAND GATE TRIPLE 3-INPUT NAND GATE VCC 14 LOW POWER SCHOTTKY 13 12 11 10 9 * 8 * * 1 2 3 4 5 6 J SUFFIX CERAMIC CASE 632-08 7 14 GND 1 * OPEN COLLECTOR OUTPUTS N SUFFIX PLASTIC CASE 646-06 14 1 14 1 D SUFFIX SOIC CASE 751A-02 ORDERING INFORMATION

751A-02

Contextual Info: SN54/74LS33 QUAD 2-INPUT NOR BUFFER QUAD 2-INPUT NOR BUFFER VCC LOW POWER SCHOTTKY 14 13 12 11 10 * 8 * * 1 9 * 2 3 4 5 6 J SUFFIX CERAMIC CASE 632-08 7 14 GND 1 * OPEN COLLECTOR OUTPUTS N SUFFIX PLASTIC CASE 646-06 14 1 14 1 D SUFFIX SOIC CASE 751A-02 ORDERING INFORMATION

74LS15

Abstract: 751A-02
Contextual Info: SN54/74LS15 TRIPLE 3-INPUT AND GATE TRIPLE 3-INPUT AND GATE VCC 14 LOW POWER SCHOTTKY 13 12 11 10 9 * 8 * * 1 2 3 4 5 6 J SUFFIX CERAMIC CASE 632-08 7 14 GND 1 * OPEN COLLECTOR OUTPUTS N SUFFIX PLASTIC CASE 646-06 14 1 14 1 D SUFFIX SOIC CASE 751A-02 ORDERING INFORMATION

74LS22

Abstract: truth table NAND gate 74 751A-02
Contextual Info: SN54/74LS22 DUAL 4-INPUT NAND GATE DUAL 4-INPUT NAND GATE VCC 14 LOW POWER SCHOTTKY 13 12 11 10 9 8 * * 1 2 3 4 5 6 J SUFFIX CERAMIC CASE 632-08 7 14 GND 1 * OPEN COLLECTOR OUTPUTS N SUFFIX PLASTIC CASE 646-06 14 1 14 1 D SUFFIX SOIC CASE 751A-02 ORDERING INFORMATION