DIODE 505 Search Results

80mw laser diode

Contextual Info: [ UTZ-SC0341_1 ] 2013/02/05 Emerald Green Laser Diode NDE4116E Engineering Sample Features Outline Dimension • Peak Wavelength: 505nm Unit mm ( + .03 6 5. 1. 6) Φ °C) • Optical Output Power: CW 80mW (@Tc=25° • Can Type: φ 5.6 mm Floating Mounted with Photo Diode and Zener Diode

BAP51-02

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.

109 DIODE

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.

80mw laser diode

Contextual Info: [ UTZ-SC0341_1 ] 2013/02/05 Emerald Green Laser Diode NDE4116E Engineering Sample   Features Outline Dimension • Peak Wavelength: 505nm Unit mm ( + .03 6 5. 1. 6 ) Φ • Optical Output Power: CW 80mW (@Tc=25C) • Can Type: 5.6 mm Floating Mounted with Photo Diode and Zener Diode

diode IN 5062

Abstract: in 5062 silicon rectifier diode
Contextual Info: 1N 5059.1N 5062 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter -2 Axial lead diode Standard silicon rectifier diodes 1N 5059.1N 5062 Forward Current: 2 A

Diode 5059

Contextual Info: SM 5059 . SM 5063 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter /5 Surface mount diode Standard silicon rectifier diodes SM 5059.SM 5063 Forward Current: 2 A

Contextual Info: @ M ITEL DS402ST Rectifier Diode SEMICONDUCTOR Supersedes August 1995 version, DS4183 - 2.2 DS4183 - 2.3 March 1998 KEY PARAMETERS v RRM 1400V 505A Jf AV 5600A FSM APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies.

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP63-02 Silicon PIN diode Preliminary specification 2001 Mar 20 Philips Semiconductors Preliminary specification Silicon PIN diode BAP63-02 PINNING FEATURES • High speed switching for RF signals PIN • Low diode capacitance

AN4506

Abstract: DS402ST DS402ST09 DS402ST10 DS402ST11 DS402ST12 DS402ST13 DS402ST14
Contextual Info: DS402ST DS402ST Rectifier Diode Replaces March 1998 version, DS4183-2.3 DS4183-3.0 January 2000 KEY PARAMETERS VRRM 1400V IF AV 505A IFSM 5600A APPLICATIONS • Rectification ■ Freewheel Diode ■ DC Motor Control ■ Power Supplies ■ Welding ■ Battery Chargers

Contextual Info: AUGUST 1995 DS402ST DS4183-2.2 DS402ST RECTIFIER DIODE APPLICATIONS KEY PARAMETERS 1400V VRRM 505A IF AV 5600A IFSM • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers. FEATURES ■ Double Side Cooling.

marking code k1

Abstract: BAP51-02 smd marking KM
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Product specification Supersedes data of 1999 Jul 01 2000 Jul 06 Philips Semiconductors Product specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP63-02 Silicon PIN diode Preliminary specification 2001 Feb 20 Philips Semiconductors Preliminary specification Silicon PIN diode BAP63-02 PINNING FEATURES • High speed switching for RF signals PIN • Low diode capacitance

BAP51-03

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D049 BAP51-03 General purpose PIN diode Product specification Supersedes data of 1999 May 10 1999 Aug 16 Philips Semiconductors Product specification General purpose PIN diode BAP51-03 FEATURES PINNING • Low diode capacitance

Marking Code 72

Abstract: smd schottky diode marking 72 B 817 marking code 203 sot323 package
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D102 1PS70SB20 Schottky barrier diode Product specification 2001 Mar 16 Philips Semiconductors Product specification Schottky barrier diode 1PS70SB20 FEATURES DESCRIPTION • Ultra high switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection

BAS240

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D154 BAS240 Schottky barrier diode Product specification 2001 Feb 05 Philips Semiconductors Product specification Schottky barrier diode BAS240 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated guard ring for stress protection.

NX8570SD

Abstract: 409d 766d ETALON 362d TLD 521 315D 346D 377D 967D
Contextual Info: LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength

Emcore solar cell

Abstract: ATJ photovoltaic cell solar cell "PHOTOVOLTAIC CELL" triple-junction "solar cell" diode cell EMCORE ATJ
Contextual Info: BTJM Photovoltaic Cell Triple-Junction with Monolothic Diode Solar Cell for Space Applications SPACE PHOTOVOLTAICS 28% Minimum Average Efficiency Features & Characteristics „ Highest efficiency flight cell with monolithic diode in the market „ Triple-Junction with Monolithic Diode BTJM InGaP/InGaAs/Ge Solar

1583 Series

Abstract: 362d 766d
Contextual Info: LASER DIODE NX8571 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength

BAS270

Abstract: BP317 BAS27
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D154 BAS270 Schottky barrier diode Product specification 2001 Feb 05 Philips Semiconductors Product specification Schottky barrier diode BAS270 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated guard ring for stress protection.

Contextual Info: DSA15I45PA preliminary Schottky Diode Gen ² VRRM = 45 V I FAV = 15 A VF = 0.63 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA15I45PA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Very low Vf

Contextual Info: DSB20I15PA advanced Schottky Diode Gen ² VRRM = 15 V I FAV = 20 A VF = 0.39 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSB20I15PA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Very low Vf

362d

Abstract: 601 Opto isolator 766d transistor NEC D 587 315D 346D 377D 409D
Contextual Info: DATA SHEET LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength

ECONO2-6PACK IGBT module

Abstract: IR E78996 GB50XF120K IGBT 6PACK MODULE IRF E78996 E78996 IR GB50XF120K ECONO-2
Contextual Info: PD - 94567 GB50XF120K IGBT 6PACK MODULE Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient

362d

Abstract: 315D 346D 377D NX8570SA b 803 a NX8570SD 933D 618D
Contextual Info: DATA SHEET LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength