DIODE 500A 2500V Search Results
DIODE 500A 2500V Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
| CUZ12V |
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Zener Diode, 12 V, USC | Datasheet | ||
| MUZ5V6 |
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Zener Diode, 5.6 V, USM | Datasheet | ||
| CEZ6V8 |
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Zener Diode, 6.8 V, ESC | Datasheet |
DIODE 500A 2500V Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TOSHIBA 500EXH22 500EXH22 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE Unit in mm HIGH SPEED RECTIFIER APPLICATIONS Repetitive Peak Reverse Voltage Average Forward Current Reverse Recovery Time VRRM = 2500V :F AV = 500A trr = 5/<s (MAX.) (Tj = 25°C) |
OCR Scan |
500EXH22 | |
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Contextual Info: TOSHIBA 500EXH22 500EXH22 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE Unit in mm HIGH SPEED RECTIFIER APPLICATIONS Repetitive Peak Reverse Voltage Average Forward Current Reverse Recovery Time VRRM = 2500V :F AV = 500A trr = 5/<s (MAX.) (Tj = 25°C) |
OCR Scan |
500EXH22 | |
MMIX1F520N075T2
Abstract: IXFZ520N075T2 ixfz520n075
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MMIX1F520N075T2 IXFZ520N075T2 MMIX1F520N075T2 IXFZ520N075T2 ixfz520n075 | |
140trContextual Info: Preliminary Technical Information MMIX1F520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions |
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MMIX1F520N075T2 IXFZ520N075T2 140tr | |
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Contextual Info: Preliminary Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET MMIX1F520N075T2 VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions |
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MMIX1F520N075T2 IXFZ520N075T2 | |
diode 500A 2500v
Abstract: 500EXH22 izl diode
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OCR Scan |
500EXH22 diode 500A 2500v 500EXH22 izl diode | |
500YKH22Contextual Info: TO SHIBA 500YKH22 500YKH22 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • Repetitive Peak Reverse Voltage VRRM = 2700V • Average Forward Current ÏF AV = 500A • Reverse Recovery Time trr = 5jus (MAX.) (Tj = 25°C) |
OCR Scan |
500YKH22 | |
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Contextual Info: 500YKH22 TO SHIBA TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 500YKH22 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Reverse Recovery Time U n it in mm = 2700V ! f AV = 500A trr = 5^s(MAX.) (Tj = 25°C) |
OCR Scan |
500YKH22 | |
500YKH22Contextual Info: TO SH IBA 500YKH22 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 500YKH22 HIGH SPEED RECTIFIER APPLICATIONS Unit in mm • Repetitive Peak Reverse Voltage : V r r m ~ 2700V • Average Forward Current : Ip AV = 500A • Reverse Recovery Time : tn ^ ö /^ s (MAX.) (Tj = 25°C) |
OCR Scan |
500YKH22 500YKH22 | |
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Contextual Info: TO SH IBA 500YKH22 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 500YKH22 HIGH SPEED RECTIFIER APPLICATIONS Unit in mm • Repetitive Peak Reverse Voltage : V r r m ~ 2700V • Average Forward Current : Ip AV = 500A • Reverse Recovery Time : tn ^ ö /^ s (MAX.) (Tj = 25°C) |
OCR Scan |
500YKH22 | |
diode 500A
Abstract: diode 500A 1200v
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68nFContextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 500 R 25 KF1 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom |
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diode 500A
Abstract: IGBT 500A 1200V FF51
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DIM500GCM33-TS000
Abstract: DIM500GCM33-TS
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DIM500GCM33-TS000 DS6098-2 DS6098-3 LN31960) 65ames DIM500GCM33-TS000 DIM500GCM33-TS | |
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68nf
Abstract: diode 500A IGBT FF 300 IC800
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DIM500GCM33-TL000
Abstract: DIM500GCM33-TL
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DIM500GCM33-TL000 DS6114-1 DS6114-2 LN31264) DIM500GCM33-TL000 DIM500GCM33-TL | |
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Contextual Info: DIM500GCM33-TS000 IGBT Chopper Module DS6098-1 May 2013 LN30465 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max) Isolated AlSiC Base With AlN Substrates |
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DIM500GCM33-TS000 DS6098-1 LN30465) 2400ames | |
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Contextual Info: DIM500GCM33-TL000 IGBT Chopper Module DS6114-1 July 2013 LN30663 FEATURES KEY PARAMETERS • Low VCE(sat) Device 10µs Short Circuit Withstand High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max) High Current Density Enhanced DMOS SPT |
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DIM500GCM33-TL000 DS6114-1 LN30663) | |
F1500NC
Abstract: calculation of diode snubber westcode fast recovery diode F1500NC250 50V 2000A diode
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F1500NC250 F1500NC250 F1500NC calculation of diode snubber westcode fast recovery diode 50V 2000A diode | |
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Contextual Info: An IXYS Company Provisional Data Data Sheet Issue:- 1 WESTCODE Date:- 2 Oct, 2003 Absolute Maximum Ratings VOLTAGE RATINGS Repetitive peak reverse voltage, note 1 VRSM Non-repetitive peak reverse voltage, (note 1) VRRM Extra Fast Recovery Diode |
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F1500NC250 F1500NC250 | |
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Contextual Info: WESTCODE An Date:- 9 Sep, 2004 Data Sheet Issue:- 1 IXYS Company Fast Recovery Diode Type M1502N#200 to M1502N#250 Old Type No.: SM16-25CXC334 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 2000 - 2500 |
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M1502N SM16-25CXC334 | |
DIM500GDM33-TS000
Abstract: DIM500GDM33-TS
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DIM500GDM33-TS000 DS6097-2 DS6097-3 LN31961) DIM500GDM33-TS000 DIM500GDM33-TS | |
M1502NC
Abstract: m1502nc250 21502A westcode fast recovery diode
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M1502N SM16-25CXC334 M1502NC m1502nc250 21502A westcode fast recovery diode | |
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Contextual Info: DIM500GDM33-TL000 Dual Switch IGBT Module DS6113-1 July 2013 LN30662 FEATURES KEY PARAMETERS • Low VCE(sat) Device 10µs Short Circuit Withstand High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max) High Current Density Enhanced DMOS SPT |
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DIM500GDM33-TL000 DS6113-1 LN30662) | |