DIODE 47C Search Results

PK P6KE 200A

Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
Contextual Info: PRODUCT CATALOG & DESIGN GUIDE DIODE Transient Voltage Suppression TVS Diode Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop

Contextual Info: 5 Ü 8 È X /W :* y a 7 jnting Device Surface Moun.ing^Device K 7 Schottky Barrier Diode K S Diode Array OUTLINE DIMENSIONS S1ZAS4 40V 1.2A •S M D • T j 1 50TC •P rrs m % T \j - •SR B S •D C /D C Z iy iK - 9 •m m , y -A . oa«h •a«. Tti-^jutü

SHINDENGEN DIODE

Contextual Info: i S l l f A - f x Surface Mounting Device y a 7 y y h ÿ 'i ^ — K 7 Schottky Barrier Diode U - f I Diode Array WWrffeffl OUTLINE DIMENSIONS S1ZAS4 40V 1.2A •S M D • T j 1 5 0"C •P n n s M m 7 I K ^ > y ÿ z U M . r u - •S R mm •D C /D C I V A '- i?

Contextual Info: s e MIKRDn Absolute Maximum Ratings Symbol Conditions ' Values Units 1200 V 550 1500 375 -5 5 + 150 A A2s °C °C °c V rrm Ifsm l2t Tsolder Tvj, Tstg Tvj, Tstg SEMICELL CAL - Diode Chips3* SKCD 47C 120 I > 6 bondwires 300 |im 0 tp = 10 ms; sin; T j = 150 °C

diode 47c

Contextual Info: VRRM V Types SEMICELL CAL - Diode Chips3 SKCD 47 C 170 I 1700 SKCD 47C 170 I 6,9x6,9 mm; 42 A4); 1700V Absolute Maximum Ratings Symbol Conditions 1) IFSM ≥ 6 bondwires 300 µm ∅) tp = 10 ms; sin; Tj = 150 °C tp = 10 ms; sin; Tj = 150 °C max. 120 s (transfer)

Contextual Info: Transient Voltage Suppression Diodes Surface Mount – 600W > TPSMB series TPSMB Series Uni-directional TVS Diode Arrays SPA Description Family of Products The TPSMB series is designed specifically to protect sensitive electronic equipment from voltage transients

GDE 13a DIODE

Abstract: diode marking GDE 38 diode 009 6V8A marking diode 47C sot23 NEC D 882 p GEX 36A DIODE Diode Gfg 6f MOTOROLA 727 36A Diode GFP 56A GFM 16A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOTĆ23 Dual Monolithic Common Anode Zener MMBZ5V6ALT1 ADDITIONAL VOLTAGES AVAILABLE Transient Voltage Suppressor For ESD Protection Motorola Preferred Device This dual monolithic silicon zener diode is designed for applications requiring transient

Contextual Info: s e MIKRD n Types V r rm V 1500 1600 1700 SEMICELL C A L - Diode Chips3 SKCD 47 C 1501 SKCD 47 C 1601 SKCD 47 C 1701 SKCD 47C 150.1701 6,9x6,9 mm; 40 A4>;1500.1700V Absolute Maximum Ratings Symbol Conditions ' If s m > 6 bondwires 300 jim 0 ) tp = 10 ms; sin; Tj = 150 °C

19tq15

Abstract: 42ctq30 IR42CTQ30 47CTQ20 IR42CTQ20 30L20 30L30 40L15 ir19 IR40L15
Contextual Info: Efficiency in SMPS Output Stage December 30th, 1999 Alberto Guerra & Francesco Vallone Department of Input/Output Rectifier International Rectifier, 1521 Grand, El Segundo 90245, California, U.S.A. Abstract. By means of the SPICE Schottky diode model, developed recently by International

FU-456RDF

Abstract: ML9XX46 laser diode DVD 300mw FU-357RPA 650nm laser diode 200mw ML7XX46 APD 10gbps 1550nm Laser Diode with butterfly pin package sirio FU-68SDF-V3M series
Contextual Info: OPTICAL DEVICES Features Great Variety of Product Line-up Wavelength: 650nm to 1600nm Product form: TO-CAN, Chip-on-Carrier, Module High Speed, High Power, High Performance Bitrate to 40 Gbps High Power to 350mW Application Map 1 Technology Trend 3 Laser Diode for Information

650nm laser diode 200mw

Abstract: FU-456RDF laser diode DVD 300mw FU-357RPP laser FP TO-CAN for SFP SIRIO FU-357RPA laser DFB 1550nm 10mW PD8XX10 ML7XX46
Contextual Info: OPTICAL DEVICES Features Great Variety of Product Line-up Wavelength: 650nm to 1600nm Product form: TO-CAN, Chip-on-Carrier, Module High Speed, High Power, High Performance Bitrate to 40 Gbps High Power to 350mW Application Map 1 Technology Trend 3 Laser Diode for Information

hp pin diode

Abstract: multi port circulator
Contextual Info: That HEWLETT rnücM PACKARD Applications o f PIN Diodes Application Note 922 Introduction The m ost im portant property of the PIN diode is the fact that it can, under certain circumstances, behave as an alm ost pure resis­ tance at RF frequencies, with a

laser diode DVD 300mw

Abstract: MF-2500FXC 785nm mitsubishi mitsubishi ic. 5201 DVD LENS circuit diagrams 1550nm Laser Diode butterfly laser diode DVD 100mw D4030 FU-423SLD laser diode for optical communication
Contextual Info: OPTICAL DEVICES Features Great Variety of Product Line-up Wavelength: 650 nm to 1600 nm Product form: TO-CAN, Chip-on-Carrier, Module High Speed, High Power, High Performance Bitrate to 40 Gbps High Power to 300 mW Application Map 1 Technology Trend 3 Laser Diode for Information

MARKING SMD 43t

Abstract: 43t SMD smd 43t a13g smd 2au smd marking 9T smd diode marking JC DIODE marking VU 49LC AI 186 N
Contextual Info: SBD Array Diode Array WWW OUTLINE Package : 1Z S1ZAS4 40 V 1.2A 1,1, m - ; Type NKo. ' Feature • SMD x vH J— _ —I . Dale codc T ï ï Main Use •mm. f - A . IJ 3 2 21 4.7 7 MAX • Switching Regulator • DC/DC Converter • Home Appliance, Game,

LM 327 CN

Abstract: LM 327 N 2088a
Contextual Info: Ordering number : EN 3 9 6 0 ¡I N o .3960 FP101 P N P E p ita x ia l P la n a r S ilico n T ra n s is to r / C o m p o site S c h o ttk y B a r r ie r D iode SA%YOi DC/DC C onverter A p p lica tio n s F e a tu r e s • C om posite type w ith a P N P tr a n s is to r a n d a S c h o ttk y b a r r ie r diode c o n ta in e d in one p ack ag e,

Contextual Info: VS-47CTQ020PbF, VS-47CTQ020-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 20 A FEATURES Base 2 common cathode • 150 °C TJ operation • Optimized for 3.3 V application • Ultralow forward voltage drop • High frequency operation Anode

Contextual Info: VS-47CTQ020PbF, VS-47CTQ020-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 20 A FEATURES Base 2 common cathode • 150 °C TJ operation • Optimized for 3.3 V application • Ultralow forward voltage drop • High frequency operation Anode

Contextual Info: VS-47CTQ020PbF, VS-47CTQ020-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 20 A FEATURES Base 2 common cathode • 150 °C TJ operation • Optimized for 3.3 V application • Ultralow forward voltage drop • High frequency operation Anode

Contextual Info: VS-47CTQ020S-M3, VS-47CTQ020-1-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A D2PAK TO-262 FEATURES • 150 °C TJ operation • Center tap configuration • Optimized for 3.3 V application • Ultralow forward voltage drop

Contextual Info: VS-47CTQ020SPbF, VS-47CTQ020-1PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A TO-263AB D2PAK FEATURES TO-262AA • 150 °C TJ operation • Center tap configuration • Optimized for 3.3 V application • Ultralow forward voltage drop

Contextual Info: VS-47CTQ020S-M3, VS-47CTQ020-1-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A D2PAK TO-262 FEATURES • 150 °C TJ operation • Center tap configuration • Optimized for 3.3 V application • Ultralow forward voltage drop

40HF

Abstract: 47CTQ020 P460
Contextual Info: Bulletin PD-20854 rev. A 02/07 47CTQ020PbF 40 Amp SCHOTTKY RECTIFIER IF AV = 40Amp VR = 20V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 40 A VRRM 20 V IFSM @ tp = 5 s sine 1000 A VF 0.34 V - 55 to 150

40HF

Abstract: 47CTQ020-1 47CTQ020S P460 SMD-220 smd DIODE code marking 20A
Contextual Info: Bulletin PD-21038 rev. A 07/06 47CTQ020SPbF 47CTQ020-1PbF SCHOTTKY RECTIFIER 40 Amp IF AV = 40Amp VR = 20V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular waveform 40 A VRRM 20 V IFSM @ tp = 5 s sine

Contextual Info: 47CTQ020PbF Vishay High Power Products Schottky Rectifier, 40 A FEATURES • • • • • • 150 °C TJ operation Available Center tap configuration RoHS* Optimized for 3.3 V application COMPLIANT Ultra low forward voltage drop High frequency operation