DIODE 476 K Search Results

diode 476 k

Abstract: data by 476 diode chopper transformer
Contextual Info: SKiiP 292 GDL 170 - 476 CTV Absolute Maximum Ratings Symbol Conditions 1 IGBT & Inverse Diode VCES Operating DC link voltage VCC 9) Theatsink = 25 °C IC IGBT & Diode Tj 3) 4) AC, 1 min. Visol Theatsink = 25 °C IF Theatsink = 25 °C; tp < 1 ms IFM tp = 10 ms; sin.; Tj = 150 °C

Contextual Info: SKKT 72, SKKH 72, SKKT 72B THYRISTOR SEMIPACK 1 Thyristor / Diode Modules SKKT 72 /0.1 /001 /%01 / :66 4"66 4#66 4566 4:66 / 766 4$66 4>66 4!66 4766 Conditions Values Units   4768 + 3 7# 466 9&8 -"<4768 + 3 ># 9&8 =$ < =! -"<476?8 + 3 "# 9&8 =$ < =!

SCHEMATIC trailing edge dimmer

Abstract: 476 20k cap
Contextual Info: CDB1611-8W CDB1611-8W 8 Watt Demonstration Board Features General Description • Quasi-resonant Flyback with Constant-current Output • Rated Input Power: 7.7W The CDB1611-8W reference design demonstrates the performance of the CS1611 resonant mode AC/DC

Contextual Info: C o n d itio n s 1> Viso, 4 AC, 1min Operating / stor. tem perature /— >I Q Sym bol 0—I SKiiP 3-phase bridge Absolute Maximum Ratings SKiiPPACK Values Units 4000 V -25.+85 °C 1700 1200 V V 250 -40.+150 250 500 2160 23 A °C A A A kAs2 IGBT and Freewheeling Diode

EL 431 044

Abstract: International Rectifier 13005 rectifier diode 1334 IR2XX 13492
Contextual Info: DESIGN TIP DT 99-7 International Rectifier • 233 Kansas Street, El Segundo, CA 90245 USA Alleviating High Side Latch on Problem at Power Up By Toshio Takahashi and Hoa Huu Nguyen TOPICS COVERED Introduction Typical Application Problem Recommended Solution

IRF Power MOSFET code marking

Abstract: audio power amplifier mosfet EIA-541 IRLR4343 IRLU4343 IRLU4343-701 R120 U120 digital audio mosfet 95394A
Contextual Info: PD - 95394A DIGITAL AUDIO MOSFET IRLR4343PbF IRLU4343PbF IRLU4343-701PbF Features Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved

2SK1205

Abstract: koa0 c100m B20S
Contextual Info: MM1b205 GQ13253 022 • H I T M 2 S K 1 2 5 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING 1. Gate 2. Drain F lan g e 3. Source (D im ensions i ■ FEATURES • • • • • Low On-Resistance High Speed Switching Low Drive Current No Secondary Breakdown

Contextual Info: SKKT 71, SKKH 71 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 1 Thyristor / Diode Modules Features                                !" #"$  Typical Applications  %&  

12f 575

Abstract: D1049N D428N D660N D798N thyristor 1012 446 DIODE
Contextual Info: M1 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 400 Veff 500 Veff 550 Veff 180 V 1400 V 220 V 1600 V 240 V 1800 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L

mm 72 diode

Contextual Info: SKKT 72, SKKH 72, SKKT 72B THYRISTOR SEMIPACK 1 Thyristor / Diode Modules SKKT 72 /0.1 /001 /%01 2+01. 3 4$# *  ,       / :66 4"66 4#66 4566 4:66 $466 / 766 4$66 4>66 4!66 4766 $666 2+*/ 3 56 * (   4768 + 3 7# 9&) .;+ 5$<67

semikron thyristor

Contextual Info: SKKT 72, SKKH 72, SKKT 72B power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter SEMIPACK 1 Thyristor / Diode Modules SKKT 72 /0.1 /001 /%01 2+01. 3 4$# *  ,      

Contextual Info: SIEMENS 6fach-Silizium-PIN-Fotodiodenarray 6-Chip Silicon PIN Photodiode Array KOM 2033 B KOM 2033 BF M aße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherw ise specified. W esentliche M erkm ale Features • • • • • Speziell geeignet für Anwendungen im

smd lg diode

Abstract: Q62703Q1640 Q62703-Q1608 diodes siemens Q62703-Q1657 smd code LR S25000 diode s250 S250-D0 S250
Contextual Info: L I Q3E D • ISIEG ô235büS 001feilST_T LR S250 LU S250 Light Emitting Diodes T '-'V I-Jf SIEMENS AKTIEN6ESELLSCHAF LEDs-single and double diodes • • • • • • Backlighting of LCDs Proximity switches Touch keyboards Failure Indications on SMD PC boards

v 4520

Abstract: T1078N T1258N T398N T828N Thyristor 606
Contextual Info: M3C - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 60 Veff 125 Veff 180 Veff 40 V 200 V 80 V 400 V 115 V 600 V ~ ~ + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L

Contextual Info: SIEMENS K 0 M 2 1 08 5 x 5 Silicon PIN Photodiode Array FEATURES • Suitable for use in the visible light and near infrared range • Low noise • Short switching time typ. 10 ns • Every single diode can be activated D im ensions in inch e s (m m ) Chip position Epoxy resin transparent

Contextual Info: PD 9.1571 International IG R Rectifier IR G 4 R C 1 0 U D PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200

smps circuit diagram of 300W

Contextual Info: rasi lillEli Application Hint 14 Current-Fed Push-Pull SMPS using the MIC3833 by George Hall and Brenda Kovacevic Introduction Advantages Most DC-DC and off-line converters have utilized the voltage fed transform er approach to convert input voltages to useful

Contextual Info: I Solid State Current Sensors f H • I Engineering Specifications LDA100 LDA110 LDA101 LDA111 s l LDA200 LDA201 LDA210 LDA211 Output Characteristics Collector Current mA Typical Capacitance (pF) (Ve.= 1 0 V ;f = 1MHz) Collector Dark Current (nA) (Ve. = SV; lF= 0mA)

Infrared object counter circuit

Abstract: rs 306-061 306-061 304-560 object counter 307-913 INFRARED OBJECT COUNTER rs 301-606 reflective opto switch kodak counter
Contextual Info: Issued March 1997 232-2447 Data Pack F Reflective and slotted opto switches 2601 Data Sheet Gallium Arsenide infra-red emitting diodes and spectrally matched detectors housed in moulded packages mechanically designed to enable sensing in a variety of applications, i.e. limit switching,

Infrared object counter circuit

Abstract: rs 306-061 306-061 304-560 INFRARED OBJECT COUNTER object counter reflective opto switch rs 301-606 307-913 photo reflective sensor application note
Contextual Info: Issued March 1987 004-276 Data Pack F Reflective and slotted opto switches 2601 Data Sheet Gallium Arsenide infra-red emitting diodes and spectrally matched detectors housed in moulded packages mechanically designed to enable sensing in a variety of applications, i.e. limit switching,

transistor SMD p05

Abstract: 1981-R TRANSISTOR SMD 2X y 127 D TRANSISTOR 476 16q CP QUICK CONNECT L-398 LDA100 LDA101 LDA110
Contextual Info: I Solid State Current Sensors f H • I Engineering Specifications LDA100 LDA110 LDA101 LDA111 s l LDA200 LDA201 LDA210 LDA211 Output Characteristics Collector Current mA Typical Capacitance (pF) (Ve.= 1 0 V ;f = 1MHz) Collector Dark Current (nA) (Ve. = SV; lF= 0mA)

DIODE V97

Contextual Info: International IOR Rectifier PD 9.1571 IRG4RC10UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode .

K476

Abstract: BUK476 BUK476-1000B 3909 transistor BU 608
Contextual Info: PHILIPS INTERNATIONAL SbE D m 711002b □DMMbb'i 17e! BiPHIN Philips Components Data sheet status Preliminary specification date of issue March 1991 B U K 4 7 6 - 1O O O A/B PowerMOS transistor Replaces BUK446-1000A/B GENERAL DESCRIPTION N -channel enhancem ent mode

semikron skkt 72

Contextual Info: SKKT 72, SKKH 72, SKKT 72B SEMIPACK 1 Thyristor / Diode Modules SKKT 72 /0.1 /001 /%01 2+01. 3 4$# *  ,       / :66 4"66 4#66 4566 4:66 $466 / 766 4$66 4>66 4!66 4766 $666 2+*/ 3 56 * (   4768 + 3 7# 9&) .;+ 5$<67 .;+ 5$=67