DIODE 476 K Search Results

diode 476 k

Contextual Info: SEMIKRON SKilP 292 GPL 170 - 476 CTV Absolute Maximum Ratings Symbol Values |Conditions1' Units IG B T & Inverse Diode VcES Vcc 9; lc T|3> Visot 4'' If Ifm Ifsm f t Diode V V A °c V A A A kA2s 1700 1200 250 40 . + 150 3500 250 500 2160 23,4 Operating D C link voltage

diode 476 k

Abstract: data by 476 diode chopper transformer
Contextual Info: SKiiP 292 GDL 170 - 476 CTV Absolute Maximum Ratings Symbol Conditions 1 IGBT & Inverse Diode VCES Operating DC link voltage VCC 9) Theatsink = 25 °C IC IGBT & Diode Tj 3) 4) AC, 1 min. Visol Theatsink = 25 °C IF Theatsink = 25 °C; tp < 1 ms IFM tp = 10 ms; sin.; Tj = 150 °C

data by 476 diode

Contextual Info: SEMIKRON SKiiP 292 GDL 170 - 476 CTV Absolute Maximum Ratings Sym bol |c o n d itio n s 1> Values Units 1700 V IGBT & Inverse Diode V cE S V c c 9> O perating DC link voltage 1200 V lc Theatsink — 25 250 A Tj 3> °C IGBT & Diode Visol 4> AC, 1 min. If = 25 °C

Contextual Info: SKKT 72, SKKH 72, SKKT 72B THYRISTOR SEMIPACK 1 Thyristor / Diode Modules SKKT 72 /0.1 /001 /%01 / :66 4"66 4#66 4566 4:66 / 766 4$66 4>66 4!66 4766 Conditions Values Units   4768 + 3 7# 466 9&8 -"<4768 + 3 ># 9&8 =$ < =! -"<476?8 + 3 "# 9&8 =$ < =!

semikron thyristor skkt

Abstract: thyristor skkt scr bridge rectifier thyristor thyristor of power
Contextual Info: SKKT 72, SKKH 72, SKKT 72B THYRISTOR SEMIPACK 1 Thyristor / Diode Modules SKKT 72 /0.1 /001 /%01 / :66 4"66 4#66 4566 4:66 / 766 4$66 4>66 4!66 4766 Conditions Values Units   4768 + 3 7# 466 9&8 -"<4768 + 3 ># 9&8 =$ < =! -"<476?8 + 3 "# 9&8 =$ < =!

Contextual Info: CRD1611-8W CRD1611-8W 8 Watt Reference Design Features General Description • Quasi-resonant Flyback with Constant-current Output The CRD1611-8W reference design demonstrates the performance of the CS1611 resonant mode AC/DC dimmable LED driver IC with a 550mA output driving

SCHEMATIC trailing edge dimmer

Abstract: 476 20k cap
Contextual Info: CDB1611-8W CDB1611-8W 8 Watt Demonstration Board Features General Description • Quasi-resonant Flyback with Constant-current Output • Rated Input Power: 7.7W The CDB1611-8W reference design demonstrates the performance of the CS1611 resonant mode AC/DC

GEM X 365

Abstract: diode ed 85
Contextual Info: STL81007G/N SIEMENS LOW POWER 1500 lim Laser in Receptacle Package Dimensions in inches mm STL81007G (13-2) .739 (18.8) i_ spacing .1 (2.54) .283 (7.2) 267 (6.8) 53 A (13.6) .519(13.2) 0) .098 (2.5) .083(2.1) Mi 365 (9.3) 350 (8.9) IS 0) '+ k .613(15.6)

diode 476 k

Abstract: D8LC20UR SHINDENGEN DIODE
Contextual Info: U i^ y p -p K U tipe Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D8LC20UR Case : ITO-220 200V 8A IS is •trr3 5 n s • 7 J IÆ - JU K •SR Ü • * a . OA. M • « « . B « , FA • Æ tè il m RATINGS Absolute Maximum Ratings m m - r Item

Contextual Info: C o n d itio n s 1> Viso, 4 AC, 1min Operating / stor. tem perature /— >I Q Sym bol 0—I SKiiP 3-phase bridge Absolute Maximum Ratings SKiiPPACK Values Units 4000 V -25.+85 °C 1700 1200 V V 250 -40.+150 250 500 2160 23 A °C A A A kAs2 IGBT and Freewheeling Diode

LTC4067

Contextual Info: DEMO C IR C U IT 9 4 3 Q U IC K S TA R LTC4067 T G U IDE LTC 4 0 6 7 U S B P o w e r C o n tro l w ith L i-Io n / P o ly m e r C h a rg e r DESCRIPTION Demonstration circuit 943 is a complete pow er controller for a U SB pow er device. It is based on the LTC4067 and provides the follow ing functions:

sgsp476

Abstract: P575 6V 475 diode diode sg 71 SGSP474 P475
Contextual Info: S G S-THÔHSON Q7E D T J 3 C 174357 ~D T Î3 ^ - / 3 J SGSP474/P475/P476 SGSP574/P575/P.578 N-GHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field e ffect transistors.

Contextual Info: O K I electronic components OCM120_ Mono-Directional Photo MOS Switch GENERAL DESCRIPTION The OCM120 is a photo coupler that combines a G aAS infrared light emitting diode input element, a photovoltaic element as the output element, and power M OS-FET in a 6-pin

EL 431 044

Abstract: International Rectifier 13005 rectifier diode 1334 IR2XX 13492
Contextual Info: DESIGN TIP DT 99-7 International Rectifier • 233 Kansas Street, El Segundo, CA 90245 USA Alleviating High Side Latch on Problem at Power Up By Toshio Takahashi and Hoa Huu Nguyen TOPICS COVERED Introduction Typical Application Problem Recommended Solution

KC324510

Contextual Info: P O W E RE X W INC W 3TE I> • TS^MbEl GÜD433Ö E R E X 1 HPRX KC324510 Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 75697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 r-ll-Zf' Common Emitter

IRF Power MOSFET code marking

Abstract: audio power amplifier mosfet EIA-541 IRLR4343 IRLU4343 IRLU4343-701 R120 U120 digital audio mosfet 95394A
Contextual Info: PD - 95394A DIGITAL AUDIO MOSFET IRLR4343PbF IRLU4343PbF IRLU4343-701PbF Features Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved

Contextual Info: SKKT 72 H4, SKKH 72 H4 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 1 Thyristor / Diode Modules SKKT 72 H4 /0.1 /001 /%01 / $466 $"66 / $666 $$66 2+01. 3 4$# *  ,       2+*/ 3 56 * (   4768 + 3 7# 9&) .:+ 5$;$6 < .: 5$;$6 <

2SK1205

Abstract: koa0 c100m B20S
Contextual Info: MM1b205 GQ13253 022 • H I T M 2 S K 1 2 5 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING 1. Gate 2. Drain F lan g e 3. Source (D im ensions i ■ FEATURES • • • • • Low On-Resistance High Speed Switching Low Drive Current No Secondary Breakdown

Contextual Info: SKKT 71, SKKH 71 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 1 Thyristor / Diode Modules Features                                !" #"$  Typical Applications  %&  

12f 575

Abstract: D1049N D428N D660N D798N thyristor 1012 446 DIODE
Contextual Info: M1 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 400 Veff 500 Veff 550 Veff 180 V 1400 V 220 V 1600 V 240 V 1800 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L

T1078N

Abstract: T1258N T398N T828N
Contextual Info: B6C - Schaltung ~~~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 60 Veff 125 Veff 180 Veff 80 V 200 V 165 V 400 V 240 V 600 V Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] + -

mm 72 diode

Contextual Info: SKKT 72, SKKH 72, SKKT 72B THYRISTOR SEMIPACK 1 Thyristor / Diode Modules SKKT 72 /0.1 /001 /%01 2+01. 3 4$# *  ,       / :66 4"66 4#66 4566 4:66 $466 / 766 4$66 4>66 4!66 4766 $666 2+*/ 3 56 * (   4768 + 3 7# 9&) .;+ 5$<67

semikron skkt 72 h4

Abstract: thyristor
Contextual Info: SKKT 72 H4, SKKH 72 H4 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 1 Thyristor / Diode Modules SKKT 72 H4 /0.1 /001 /%01 / $466 $"66 / $666 $$66 2+01. 3 4$# *  ,       2+*/ 3 56 * (   4768 + 3 7# 9&) .:+ 5$;$6 < .: 5$;$6 <

2SK1205

Contextual Info: MM1b205 GQ13253 022 • H I T M 2 S K 1205 SILICON N-CHANNEL MOS F E T HIGH SPEED POWER SWITCHING 1. Gate 2. Drain F lan g e 3. Source (D im ensions i ■ FEATURES • • • • • Low On-Resistance High Speed Switching Low Drive Current No Secondary Breakdown