DIODE 420V Search Results
DIODE 420V Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ12V |
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Zener Diode, 12 V, USC | Datasheet | ||
MUZ5V6 |
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Zener Diode, 5.6 V, USM | Datasheet | ||
CEZ6V8 |
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Zener Diode, 6.8 V, ESC | Datasheet |
DIODE 420V Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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RKS101KG
Abstract: xenon flash lamp "cpu" xenon Xenon Flash
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RKS101K 100ns 400ctrical 100mA RKS101KG REJ01G0013-0200 RKS101KG xenon flash lamp "cpu" xenon Xenon Flash | |
Xenon Flash
Abstract: average voltage measurment
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RKS101K 100ns 100mA RKS101KG RKS101KG REJ01G0013-0100 Xenon Flash average voltage measurment | |
MB1S
Abstract: O20C
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MB05S MB10S 260oC/10 E165989 MIL-STD-750 J-STD-020C MB10S MB1S O20C | |
MB6SContextual Info: MCC Features • • • • • Glass Passivated Diode Construction High Surge Overload Rating:35A Peak Saves Space On Printed Circuit Board High Temperature Soldering Guaranteed:260oC/10 Second UL Recognized File # E165989 Mechanical Data • MB05S THRU |
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MB05S MB10S 260oC/10 E165989 MIL-STD-750 J-STD-020C MB10S MB6S | |
MB10SContextual Info: MCC TM Micro Commercial Components Features • • • • • Glass Passivated Diode Construction High Surge Overload Rating:35A peak Saves Space on Printed Circuit Board High Temperature Soldering Guaranteed: 260℃/10 Second UL Recognized File # E165989 |
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MB05S MB10S E165989 MIL-STD-750, J-STD-020C MB10S | |
Contextual Info: MCC TM Micro Commercial Components Features • • • • Glass Passivated Diode Construction High Surge Overload Rating:35A peak Saves Space on Printed Circuit Board High Temperature Soldering Guaranteed: 260℃/10 Second Maximum Ratings • MB05M THRU |
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MB05M MB10M MIL-STD-750, J-STD-020C MB10M | |
MB1SContextual Info: MCC TM Micro Commercial Components Features • • • • • Glass Passivated Diode Construction High Surge Overload Rating:35A peak Saves Space on Printed Circuit Board High Temperature Soldering Guaranteed: 260℃/10 Second UL Recognized File # E165989 |
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MB05S MB10S E165989 MIL-STD-750, J-STD-020C MB10S MB1S | |
Contextual Info: MCC Micro Commercial Components Features • • • Glass Passivated Diode Construction High Temperature Soldering Guaranteed:260oC/10 Second Saves Space On Printed Circuit Board Mechanical Data • • • • Lead Free Finish/RoHS Compliant NOTE 1 ("P" Suffix |
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MB05S MB10S 260oC/10 MIL-STD-750 J-STD-020C | |
MB10M
Abstract: 5A, 50V BRIDGE-RECTIFIER MB8M MB05M
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MB05M MB10M 50Vstantaneous MB10M 5A, 50V BRIDGE-RECTIFIER MB8M MB05M | |
mb6s diode
Abstract: Bridge Rectifier, 35A, 600V MB10S
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260oC/10 MIL-STD-750 J-STD-020C MB05S MB10S mb6s diode Bridge Rectifier, 35A, 600V MB10S | |
DB101
Abstract: Bridge Diode Rectifier DB107 DB107 DIODE db101 DB102 DB103 DB104 DB105 DB106
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DB101 DB107 DB102 DB103 DB104 DB105 DB106 DB101 Bridge Diode Rectifier DB107 DB107 DIODE db101 DB102 DB103 DB104 DB105 DB106 | |
RJ635Contextual Info: TOSHIBA GaAs IRED & PHOTO-THYRISTOR TLP741J Office Machine Household Use Equipment Solid State Relay Switching Power Supply The Toshiba TLP741J consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package. |
OCR Scan |
TLP741J 150mA UL1577, E67349 BS415 BS7002 EN60950) 4000Vrms TLP741J VDE0884 RJ635 | |
25A, 50V BRIDGE-RECTIFIER
Abstract: SDB101 SDB102 SDB103 SDB104 SDB105 SDB106 SDB107 DIODE bridge 255 Bridge Diode 1A 800V
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SDB101 SDB107 SDB102 SDB103 SDB104 SDB105 SDB106 25A, 50V BRIDGE-RECTIFIER SDB101 SDB102 SDB103 SDB104 SDB105 SDB106 SDB107 DIODE bridge 255 Bridge Diode 1A 800V | |
MB4SContextual Info: MCC Features • • • • • Glass Passivated Diode Construction High Surge Overload Rating:35A peak Saves Space on Printed Circuit Board High Temperature Soldering Guaranteed: 260℃/10 Second UL Recognized File # E165989 Maximum Ratings • MB05S THRU |
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MB05S MB10S E165989 MIL-STD-750, J-STD-020C MB4S | |
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FAST RECOVERY DIODE 200ns
Abstract: fast recovery diode 1a trr 200ns fast recovery diode 2a trr 200ns TO3 package RthJC diode 15A FAST RECOVERY DIODE 200ns 2a NTE6200 NTE6202 NTE6206 NTE6208
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NTE6200 NTE6210 NTE6200 NTE6202) NTE6206 NTE6210) 200ns NTE6200, NTE6206 NTE6202, FAST RECOVERY DIODE 200ns fast recovery diode 1a trr 200ns fast recovery diode 2a trr 200ns TO3 package RthJC diode 15A FAST RECOVERY DIODE 200ns 2a NTE6202 NTE6208 | |
1N1183(R)
Abstract: 1N3768
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1N1183 1N3768 35Amp 1N1184 1N1186 1N1188 1N1189 1N1190 1N3765 1N1183(R) | |
S70B(R)Contextual Info: S 70B R T H RU S 70Y ( R) DACO SEMICONDUCTOR CO., LTD. STANDARD RECOVERY DIODE STUD TYPES Features 70A 70 Amp Rectifier 100-1600 Volts High Surge Capability Types Up to 1600V V RRM Maximum Ratings Operating Temperature: Storage Temperature: Part Number |
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1N2128A(R)Contextual Info: 1N2128A R T HRU 1N2138A(R) DACO SEMICONDUCTOR CO., LTD. Features STANDARD RECOVERY DIODE STUD TYPES 60A 60 Amp Rectifier 50-600 Volts High Surge Capability Types Up to 600V V RRM Maximum Ratings Operating Temperature: Storage Temperature: Part Number 1N2128A(R) |
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1N2128A 1N2138A 1N2129A 1N2130A 1N2131A 1N2133A 1N2135A 1N2137A 1N2128A(R) | |
1N3208(R)Contextual Info: 1N3208 R T HR U 1N3214A(R) DACO SEMICONDUCTOR CO., LTD. STANDARD RECOVERY DIODE STUD TYPES Features 15A 15 Amp Rectifier 50-600 Volts High Surge Capability Types Up to 600V V RRM DO-5 Maximum Ratings Operating Temperature: Storage Temperature: Part Number |
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1N3208 1N3214A 1N3209 1N3210 1N3211 1N3212 1N3213 1N3214 1N3208(R) | |
TLP647JContextual Info: GaAs IRED a PHOTO-THYRISTOR TLP647J TLP647J OFFICE MAC H IN E. HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. The TOSHIBA TLP647J consists of a photo-thyristor optically coupled to a gallium arsenide infrared em itting diode in a six lead |
OCR Scan |
TLP647J TLP647J) TLP647J 150mA UL1577, E67349 BS415 S7002 EN60950) SS4330784, | |
Contextual Info: S300BM R THRU S300YM(R) DACO SEMICONDUCTOR CO., LTD. Features STANDARD RECOVERY DIODE STUD TYPES 300A High Surge Capability Types Up to 1600V V RRM 300Amp Rectifier 100~1600 Volts Maximum Ratings DO-9(DO-205AB) Operating Temperature: -55 to Storage Temperature: -55 |
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S300BM S300YM 300Amp DO-205AB) S300DM S300EM S300GM S300JM S300KM | |
1N1183A(R)Contextual Info: 1N1183A R T HR U 1N1190A(R) DACO SEMICONDUCTOR CO., LTD. Features STANDARD RECOVERY DIODE STUD TYPES 40A 40Amp Rectifier 50-600 Volts High Surge Capability Types Up to 600V V RRM Maximum Ratings Operating Temperature: Storage Temperature: Part Number 1N1183A(R) |
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1N1183A 1N1190A 40Amp 1N1184A 1N1186A 1N1188A 1N1183A(R) | |
DIODE db101Contextual Info: Micmsemi h Châtowortti, C A m 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 1 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts Features Through Hole Package Glass Passivated Diode Construction Moisture Resistant Eipoxy Case |
OCR Scan |
DB101 DB102 DB103 DB104 DB105 DB106 DB107 DIODE db101 | |
Contextual Info: MCC TM Micro Commercial Components Features x x x x • Glass Passivated Diode Construction High Surge Overload Rating:35A peak Saves Space on Printed Circuit Board High Temperature Soldering Guaranteed: 260к/10 Second UL Recognized File # E165989 Mechanical Data |
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MB05S MB10S E165989 MIL-STD-750, J-STD-020C MB10S |