DIODE 3GH Search Results

Ea 1530 A

Abstract: 1553 optical
Contextual Info: HL1553-1.55 pm Laser Diode with EA Modulator Description The HL1553 is a 1.55 firn InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW ) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is suitable as

BAR63-02L

Contextual Info: BAR63-02L Silicon PIN Diode Preliminary data
PIN diode for high speed switching 2 of RF signals
Very low forward resistance low insertion loss 1
Very low capacitance (high isolation)
small inductance
For frequencies up to 3GHz
Ultra small leadless package

Contextual Info: BAR 63-02L Silicon PIN Diode Preliminary data
PIN diode for high speed switching 2 of RF signals
Very low forward resistance low insertion loss 1
Very low capacitance (high isolation)
small inductance
For frequencies up to 3GHz
Ultra small leadless package

BAR63-07F

Abstract: P3S marking TSFP-4
Contextual Info: BAR63-07F XYs Silicon PIN Diode Preliminary data 3
PIN diode for high speed switching of RF signals 2 4 1
Very low forward resistance low insertion loss
Very low capacitance (high isolation) TSFP-4
small inductance
For frequencies up to 3GHz
Ultra small SMD package for dual diodes

Contextual Info: Switches - PIN Diode These solid-state PIN Diode RF switches operate from 10 MHz to 1.5 GHz and can be used to control the RF signal path. The units are available in many package configurations with up to eight 8 throws. Control is obtained through TTL Logic.

HP 5082-3081

Abstract: HSMP-3814 avago 5188 hsmp3814 HSMP-386x Series KYOCERA RESISTOR NETWORKS mcr10ezhj222 "Common rail" HSMP-38 sot-323 CR21
Contextual Info: A Low-Cost Surface Mount PIN Diode π Attenuator Application Note 1048 Introduction Background Analog attenuators find wide application in RF and microwave networks. Realized as either GaAs MMICs or PIN diode networks, these circuits are used to set the power level of an RF signal from a voltage control. In

PD-LD

Contextual Info: PD LD CWDM 1.3~1.6um Band Laser Diode Modules Inc. CWDM 1.3~1.6um Band Laser Diode Modules PD-LD Inc. offers a complete selection of CWDM DFB Lasers for the O+E+S+C+L+B regions. These units are available in ready-to-use, fiber-coupled packages, including FC, ST, and SC receptacles, as well

Contextual Info: TO SHIBA 3BH41,3GH41,3JH41 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 3BH41, 3GH41, 3JH41 HIGH SPEED RECTIFIER APPLICATIONS FAST RECOVERY • A verage Forward Current : I f (AV) —3.0A • Repetitive Peak Reverse Voltage : V rrjv [ = 100—600V •

toshiba diode 3gh

Abstract: 3GH41 3JH41 diode 3gh 3BH41 D0-201AD toshiba month code MARK diode general semiconductor TOSHIBA RECTIFIER
Contextual Info: TOSHIBA 3BH41#3GH41#3JH41 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 3BH41, 3GH41, 3JH41 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS FAST RECOVERY • Average Forward Current • Repetitive Peak Reverse Voltage • Reverse Recovery Time !F(AV) =3.0A

LT5503

Contextual Info: LTC5509 300MHz to 3GHz RF Power Detector in SC70 Package FEATURES • ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Temperature Compensated Internal Schottky Diode RF Detector Wide Input Frequency Range: 300MHz to 3GHz Wide Input Power Range: –30dBm to 6dBm Buffered Detector Output

BAR63-02W

Abstract: BAR63-02L BAR63-02V
Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)

DIODE RF DETECTOR

Abstract: audio envelope detector diode schottky diode 2GHz to 3GHz LTC5509 71893 LTC5507 marking E5 amplifier rf detector RF Power detector S11 SCHOTTKY diode
Contextual Info: LTC5509 300MHz to 3GHz RF Power Detector in SC70 Package U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Temperature Compensated Internal Schottky Diode RF Detector Wide Input Frequency Range: 300MHz to 3GHz Wide Input Power Range: –30dBm to 6dBm Buffered Detector Output

BAR63-05

Abstract: BAR63-02L BAR63-02V
Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05

BAR63-02W

Abstract: BAR63-02L BAR63-02V
Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05

marking G5s

Abstract: BAR63-02L BAR63-02V
Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05

BAR63-02W

Abstract: BAR63-02L BAR63-02V
Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05

BAR63-02V

Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)

Pin diode G4S

Abstract: BAR63-02L BAR63-04W BAR63 BAR63-03W BAR63-04 BAR63-05 BAR63-05W BAR63-06 BAR63-06W
Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05

BAR63-02L

Abstract: BAR63-07L4 Pin diode G4S BAR63 BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06
Contextual Info: BAR63. Silicon PIN Diodes
PIN diode for high speed switching of RF signals
Very low forward resistance low insertion loss
Very low capacitance (high isolation)
For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W

Pin diode G4S

Abstract: BAR63 BAR63-02L BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W
Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101

3GH41

Abstract: toshiba diode 3gh TOSHIBA RECTIFIER 3JH41
Contextual Info: TOSHIBA 3GH41,3JH41 TOSHIBA FAST RECOVERY DIODE M r • ■ ■ ■ SILICON DIFFUSED TYPE 3IH A1 g mm V ■ ■ ■ ■ Unit in mm HIGH SPEED RECTIFIER APPLICATIONS FAST RECOVERY • Average Forward Current • Repetitive Peak Reverse Voltage • Reverse Recovery Time

DIODE marking A2 SCD80

Abstract: BAR63-02W BAR63-02L BAR63-02V BAR63
Contextual Info: BAR63. Silicon PIN Diodes
PIN diode for high speed switching of RF signals
Very low forward resistance low insertion loss
Very low capacitance (high isolation)
For frequencies up to 3GHz BAR63-02. BAR63-03W 1 BAR63-04 BAR63-04W BAR63-04S BAR63-05

Contextual Info: BAR 64 . W 3 Silicon PIN Diode
High voltage current controlled RF resistor for RF attenuator and switches 2
Frequency range above 1MHz
Low resistance and short carrier lifetime 1
For frequencies up to 3GHz BAR 64-04W BAR 64-05W VSO05561 BAR 64-06W

Contextual Info: BAR 64-02V Silicon PIN Diode 2
High voltage current controlled RF resistor for RF attenuator and switches
Frequency range above 1MHz 1
Low resistance and short carrier lifetime VES05991
Very low inductance
For frequencies up to 3GHz
Extremely small plastic SMD package