DIODE 3A 600V Search Results

DBA30

Abstract: DBA30B DBA30C DBA30E DBA30G silicon diode 3a DIODE 3A
Contextual Info: Ordering number:EN648D DBA30 Diffused Junction Silicon Diode 3A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier applications. · Plastic molded type. · Peak reverse voltage : VRM=100 to 600V. · Average rectified current : IO=3A

A306

Abstract: STTA306B STTA306B-TR ST A306
Contextual Info: STTA306B TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 3A VRRM 600 V trr (typ) 20 ns VF (max) 1.65 V K FEATURES AND BENEFITS SPECIFIC TO FREEWHEEL MODE OPERATIONS: FREEWHEEL OR BOOSTER DIODE. ULTRA-FAST, AND SOFT RECOVERY.

3L60

Contextual Info: n - n x V 'C X - Y Super Fast Recovery Diode Single Diode OUTLINE DIMENSIONS D3L60 600V 3A • h iîj ï • t r r 50ns m m •P F C •SRSÎÜ •75-rjn -f-ju •T V + B s RATINGS Absolute Maximum Ratings a E-f- a Item Operating Junction Temperature Average Rectified Forward Current

GF30D

Contextual Info: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 3.0A GF30DL THRU GF30ML VF < 0.91V @IF = 3A FEATURES Lead free product, compliance to RoHS GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications

GD6NC60HD

Abstract: JESD97 STGD6NC60HD STGD6NC60HDT4
Contextual Info: STGD6NC60HD N-channel 600V - 7A - DPAK Very fast PowerMESH IGBT General features • ■ Type VCES VCE sat Max @25°C IC @100°C STGD6NC60HD 600V <2.5V 7A Low on voltage drop (Vcesat) 3 1 Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode

GB6NC60H

Abstract: JESD97 STGB6NC60H STGB6NC60HT4
Contextual Info: STGB6NC60H N-channel 600V - 7A - D2PAK Very fast PowerMESH IGBT General features Type VCES VCE sat max @25°C IC @100°C STGB6NC60H 600V <2.5V 7A • Low on voltage drop (Vcesat) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode

GD6NC60H

Abstract: JESD97 STGD6NC60H STGD6NC60HT4
Contextual Info: STGD6NC60H N-channel 600V - 7A - DPAK Very fast PowerMESH IGBT General features • ■ ■ Type VCES VCE sat Max @25°C IC @100°C STGD6NC60H 600V <2.5V 7A Low on voltage drop (Vcesat) 3 1 Low CRES / CIES ratio (no cross-conduction susceptibility) DPAK

FQB3N60C

Abstract: FQB3N60CTM 3A, 50V BRIDGE
Contextual Info: QFET TM FQB3N60C 600V N-Channel MOSFET Features Description • 3A, 600V, RDS on = 3.4Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

3n60a4

Abstract: 3N60 HGTD3N60A4S HGT1S3N60A4S HGT1S3N60A4S9A HGTP3N60A4 HGTP3N60A4D TB334
Contextual Info: HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTD3N60A4S, HGT1S3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input

AP3986

Contextual Info: AP3986P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 1.4Ω ID G 6A S Description AP3986 series are specially designed as main switching devices for universal

D3L60

Abstract: ITO-220
Contextual Info: SHINDENGEN Super Fast Recovery Rectifiers Single OUTLINE DIMENSIONS D3L60 Case : ITO-220 Unit : mm 600V 3A FEATURES High Voltage trr50ns Fully Isolated Molding Dielectric strength 1.5kV guaranteed APPLICATION PFC Switching power supply Free Wheel CTV+B output, lighting

Contextual Info: SCT2450KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 450mW ID 10A PD 85W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode

mosfet 1200V 3A

Abstract: APT7M120B APT7M120S MIC4452 MOSFET 1200v 3*a
Contextual Info: APT7M120B APT7M120S 1200V, 7A, 2.50Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

330MAX

Abstract: Diode B2x QCA150AA120
Contextual Info: TRANSISTOR MODULE QCA150AA120 UL;E76102 （M） 108max 93±0.5 15 C1 25.0 3-M6 L=10max E1 B1 B1X •Maximum Ratings AMP110 t=0.5 Unit：A （Tj＝25℃ unless otherwise specified） Item VCBO Collector-Base Voltage VCEX Collector-Emitter Voltage VEBO Emitter-Base Voltage

STGD3NB60H

Abstract: STD3NB60
Contextual Info: STGD3NB60H N-CHANNEL 3A - 600V - DPAK PowerMESH IGBT TYPE STD3NB60H • ■ ■ ■ ■ ■ ■ ■ ■ VCES VCE sat IC 600 V < 2.8 V 3A HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY

AOD3N50

Abstract: AOU3N50
Contextual Info: AOD3N50/AOU3N50 500V, 3A N-Channel MOSFET General Description Product Summary The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

IXFA6N120P

Abstract: IXFH6N120P IXFH6N120 IXFP6N120P
Contextual Info: Preliminary Technical Information IXFA6N120P IXFP6N120P IXFH6N120P PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 1200V = 6A ≤ 2.75Ω Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions

D06E60

Abstract: PG-TO252-3 IDD06E60 D06E6 marking diode 6a
Contextual Info: IDD06E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 6 A VF 1.5 V T jmax 175 °C • Low forward voltage • 175°C operating temperature • Easy paralleling

Contextual Info: STTA306B TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS 3 I f a v 600 V V rrm trr 20 ns (typ) V f (max) A 1.65 V FEATURES AND BENEFITS • SPECIFICTO ’’FREEWH EEL MODE” OPERATIONS: FREEWHEEL OR BOOSTER DIODE ■ ULTRA-FAST, AND SOFT RECOVERY

LG direct drive motor

Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
Contextual Info: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W

2SK2651-01MR

Abstract: MOSFET 900V 3A 2sk2651
Contextual Info: 2SK2651-01MR N-channel MOS-FET FAP-IIS Series 900V > Features - 2,5Ω 6A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -

Contextual Info: 2SK2653-01R N-channel MOS-FET FAP-IIS Series 900V > Features - 2,5Ω 6A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators

Contextual Info: 2SK2651-01MR N-channel MOS-FET FAP-IIS Series 900V > Features - 2,5Ω 6A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -

Contextual Info: Preliminary Datasheet RJL6012DPE R07DS0814EJ0200 Previous: REJ03G1750-0100 Rev.2.00 Jun 21, 2012 600V - 10A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.88  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)