DIODE 3A 1000V Search Results

GF30D

Contextual Info: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 3.0A GF30DL THRU GF30ML VF < 0.91V @IF = 3A FEATURES Lead free product, compliance to RoHS GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications

Contextual Info: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 3.0A GF30DLH THRU GF30MLH VF < 0.91V @IF = 3A FEATURES Halogen-free type Lead free product, compliance to RoHS GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications

APT6M100K

Abstract: MIC4452 3a ultra fast diode
Contextual Info: APT6M100K 1000V, 6A, 2.50Ω MAX N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT6M100K

Abstract: MIC4452
Contextual Info: APT6M100K 1000V, 6A, 2.50Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT5F100K

Abstract: MIC4452 1000v5a
Contextual Info: APT5F100K 1000V, 5A 2.8Ω Max, Trr ≤ 155nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced

2510W

Abstract: RS1M diode
Contextual Info: Email: info@kingtronics.com Web: www.kingtronics.com Tel: +86 769 81188110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Bridge Rectifier List UL ISO Manufacturer since 1990 Diode Recitifer M7 DO-214AC (1A 1000V)SMA Bridge Rectifier ABS2-ABS6; ABS8; ABS10

IXTH6N100D2

Abstract: t6n100 IXTA6N100D2 IXTP6N100D2 T6N10 6N100D2 diode 6A 1000v
Contextual Info: Preliminary Technical Information IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 Depletion Mode MOSFET VDSX ID on = > ≤ RDS(on) 1000V 6A 2.2Ω Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V Continuous

Contextual Info: Advance Technical Information IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 Depletion Mode MOSFET VDSX ID on = > ≤ RDS(on) 1000V 6A 2.2Ω Ω N-Channel TO-263 AA (IXTA) G S D (TAB) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: KBP3005 THRU KBP310 桥式整流器 Bridge Rectifier •特征 Features ● Io ■外形尺寸和印记 Outline Dimensions and Mark 3A KBP VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高 High surge forward current capability

STP3NB100FP

Abstract: STP3NB100
Contextual Info: STP3NB100 STP3NB100FP N-CHANNEL 1000V - 5.3Ω - 3A TO-220/TO-220FP PowerMesh MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STP3NB100 1000 V <6Ω 3A STP3NB100FP 1000 V <6Ω 3A • ■ ■ ■ ■ TYPICAL RDS(on) = 5.3Ω EXTREMELY HIGH dv/dt CAPABILITY

Contextual Info: GBU6005 THRU GBU610 桥式整流器 Bridge Rectifier •特征 Features ● Io ■外形尺寸和印记 6A GBU VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高 High surge forward current capability .880 22.3 .860(21.8)

Contextual Info: GBJ6005 THRU GBJ610 桥式整流器 Bridge Rectifier •特征 Features ● Io ■外形尺寸和印记 6A VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高 High surge forward current capability ● ● 6KBJ HOLE FOR NO.

QM15

Abstract: T1027
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM150E2Y/E3Y-2HK HIGH POWER SWITCHING USE INSULATED TYPE QM15GE2Y/E3Y-2HK • Ic Collector c u rre n t. 150A • VCEX C ollector-em itter v o lta g e . 1000V • hFE DC current g a in . 75

T3N100

Abstract: IXTA3N100D2 82709 IXTP3N100D2 3N100D2 T3N1 IXTP3N100
Contextual Info: Depletion Mode MOSFETs IXTA3N100D2 IXTP3N100D2 VDSX ID on RDS(on) = > ≤ 1000V 3A 5.5Ω Ω N-Channel TO-263 AA (IXTA) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX G Maximum Ratings S 1000 V Continuous ±20 V VGSM Transient ±30 V PD TC = 25°C 125

T3N100

Abstract: IXTA3N100D2 3n100 ixta3n100 IXTP3N100D2
Contextual Info: Preliminary Technical Information IXTA3N100D2 IXTP3N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 1000V 3A 5.5Ω Ω N-Channel TO-263 AA (IXTA) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX G Maximum Ratings S 1000 V Continuous ±20 V VGSM

P-TO-247-3-1

Abstract: smps* ZVT Electronic ballast 40W IKB03N120H2 1000v 3a diode Electronic ballast 220 v 40W f 9222 l Q67040-S4594 IKP03N120H2 IKW03N120H2
Contextual Info: IKP03N120H2, IKW03N120H2 IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter C G 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits

SR506 Diode

Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
Contextual Info: Room I, Floor 4, 13 Yip Fung Street, Hong Kong Tel: +86 769 8118 8110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Rectifier List Diode Rectifier Diode Rectifier M7 SMD4001-4007 Diode SR560 (5A 60V) Bulk RoHS. DO-27 S1A -S1M Diode UF4004 (1А 400V) Bulk RoHS. DO-41

Contextual Info: DIGITRON SEMICONDUCTORS 1N5614 – 1N5622 DIODE STANDARD RECOVERY RECTIFIER 2.0A, 200-1000V MAXIMUM RATINGS Rating Value Thermal resistance 38°C/W junction to lead at 3/8” lead length from body Thermal impedance 4.5°C/W @ 10ms heating time Average rectified forward current

smps* ZVT

Abstract: 1200v 3A 15v 60w smps Electronic ballast 40W IGB03N120H2 IGP03N120H2 IGW03N120H2 Q67040-S4596 Q67040-S4599 P-TO-247-3-1
Contextual Info: IGP03N120H2, IGW03N120H2 IGB03N120H2 HighSpeed 2-Technology • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies C G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits

IRFNG50

Abstract: mosfet 10a 800v high power 91556A
Contextual Info: PD - 91556A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG50 R DS(on) 2.0Ω ID 5.5A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

G016

Contextual Info: MITSUBISHI TRANSISTOR MODULES ; QM300DY-2HB ! HIGH POWER SWITCHING USE INSULATED TYPE QM 300DY-2HB { •1C Collector current. 300A • V cex Collector-emitter voltage.1000V • hFE DC current gain. 750 • Insulated Type

K06N60

Abstract: fast recovery diode 2a trr 200ns SKB02N60
Contextual Info: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

D3UB100

Contextual Info: D3UB05 THRU D3UB100 桥式整流器 Bridge Rectifier •特征 Features ● Io ■外形尺寸和印记 Outline Dimensions and Mark 3A D3K VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高 High surge forward current capability

5A220VAC

Abstract: RELAY PCB DPDT 4c E158859 JZX-18FF 220vac relay BM 0228 006ac 220vac 10 A relay RELAY PCB DPDT 2c R2133
Contextual Info: JZX-18FF Operation condition JZX-18FF Insulation Resistance1 Dielectric Strength1) R 21.5 R2133923 35 C US E158859 Features Small size, light weight, heavy reverse power. Optional mounting ways. Firm structure, strong anti-shock & anti vibration. Suitable for automatic control, telecommunication equipment, household electrical appliances and machinery electrical