DIODE 345 Search Results

BKM-3456-F-21-SP

Abstract: 1310nm TRANSCEIVER CIRCUIT DIAGRAM 1550nm analog receiver PIN Photodiode 1550nm BKM-3455-F-21 BKM-3455-F-21-FP BKM-3455-F-21-SP BKM-3456-F-21-FP W300C
Contextual Info: transimpedance amplifier laser diode driver ASOC Dual-wavelength Single-fibre 1x9 Transceiver Modules ASOC transceiver limiting amplifier optical transmit/receive at different wavelengths BKM-3450-F Family With Laser Diode Driver, AGC Transimpedance Amplifier and Limiting Amplifier

LMH6525

Abstract: High-Frequency Modulation Laser cd dvd
Contextual Info: LMH6525,LMH6526 LMH6525/LMH6526 Four–Channel Laser Diode Driver with Dual Output Literature Number: SNOSAF1A LMH6525/LMH6526 Four–Channel Laser Diode Driver with Dual Output General Description Features The LMH 6525/6526 is a laser diode driver for use in

APT30D120BG

Abstract: APT10035LLL APT30D120B APT30D120S APT30D120SG
Contextual Info: 1200V 30A APT30D120B APT30D120S APT30D120BG* APT30D120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE TO PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply

Contextual Info: PRELIMINARY Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com PS41_20 POW-R-BLOKTM Single Diode Isolated Module 2000 Amperes / Up to 4400 Volts Description: Powerex Single Diode Modules are designed for use in applications

IRK E78996 701819-303ac

Abstract: E78996 scr IRF E78996 IRK E78996 p432 I27900 snubber circuit
Contextual Info: Bulletin I27104 rev. A 09/97 IRK.F72. SERIES INT-A-pakä Power Modules FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features 71 A Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage

VSK.F180.P

Abstract: k20s TA7000
Contextual Info: VSK.F180.P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor MAGN-A-PAK Power Modules , 180 A FEATURES • Fast turn-off thyristor • Fast recovery diode • High surge capability • Electrically isolated baseplate • 3000 VRMS isolating voltage

Contextual Info: PS41_25 TM POW-R-BLOK Single Diode Isolated Module 2500 Amperes / Up to 2400 Volts Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Description: Powerex Single Diode Modules are designed for use in applications requiring rectification

NX8563

Abstract: NX8563-AZ NX8563LB NX8563LF laser diode 1550 nm 160832
Contextual Info: NEC's CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATIONS 10 mW MIN NX8563 SERIES FEATURES DESCRIPTION • OUTPUT POWER: Pf = 10 mW MIN NEC's NX8563 Series are a 1550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode

APT15D30K

Abstract: APT15D30SA APT30M75BLL
Contextual Info: 1 2 TO-220 D2PAK 1 - Cathode 2 - Anode Back of Case - Cathode 1 1 2 2 APT15D30K 300V APT15D30SA 300V 15A 15A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times

NX8570SA

Abstract: NX8570SA-BA NX8570SA-CA rin 1550 laser diode
Contextual Info: PRELIMINARY DATA SHEET 1550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR NX8570SA FEATURES DESCRIPTION • OUTPUT POWER: Pf = 20 mW MIN The NX8570SA is a 1550 nm laser diode with wavelength monitor function. This device is designed as a CW light source

NX7561JB-BC

Abstract: NX7561JB-BC-AZ
Contextual Info: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE NX7561JB-BC FOR OTDR APPLICATION 135 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 135 mW MIN at IFP = 1000 mA, Pulse width (PW) = 10ms, Duty = 1% NEC's NX7561JB-BC is a 1550 nm developed strained Multiple Quantum Well (st-MQW) structure pulsed laser diode DIP

nec laser diode OTDR

Abstract: NX7661JB-BC NX7661JB-BC-AZ
Contextual Info: NEC's 1625 nm InGaAsP MQW FP NX7661JB-BC PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION 120 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 120 mW MIN at IFP = 1000 mA, Pulse width (PW) = 10 ms, Duty = 1% NEC's NX7661JB-BC is a 1625 nm developed strained Multiple Quantum Well (st-MQW) structure pulse laser diode DIP

Contextual Info: n - n x V 'C X - Y - H £I Surface Mount Super Fast Recovery Diode Single Diode OUTLINE DIMENSIONS M1FL40 400V 1.5 A • / J v ik S M D V&MX • t r r 50ns m m •SRSÎÜ •D C /D C □ yj {— $> •^ B s O A .P ,^ • iliS s FA RATINGS Absolute Maximum Ratings

HRW0202B

Abstract: SC-59A DSA003641
Contextual Info: HRW0202B Silicon Schottky Barrier Diode for Rectifying ADE-208-345A Z Rev. 1 Oct. 1997 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

cmg07

Abstract: CRS15 5DL2CZ 10lc48 CMS19 CMZ24 CUS01 rf semiconductors CRH02 5DL2CZ transistor
Contextual Info: 2009-9 PRODUCT GUIDE Small and Medium Diodes SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng ▲ Diode Product Tree Rectifier Diodes General-Purpose Rectifiers High-Speed Rectifiers Super-Fast Recovery Diodes High-Efficiency Diodes Schottky Barrier Diodes

75OHM

Abstract: RF2360 in1516 marking swp 9 laser current driver
Contextual Info: RF2360 LINEAR GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description

555 CIRCUIT WITH FOOTPRINT

Abstract: BAW62 DA121TT1 SMD310
Contextual Info: DA121TT1 Preferred Device Advance Information Silicon Switching Diode http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms Symbol Max Unit VR 80 V IF

Contextual Info: PFS7323-7329 HiperPFS-2 Family High Power PFC Controller with Integrated High-Voltage MOSFET and Qspeed™ Diode Key Benefits • Output Power Table Highly integrated for smallest boost PFC form factor Integrated controller and MOSFET in all package options

BAW62

Abstract: DA121TT1 DA121TT1G pad6a
Contextual Info: DA121TT1 Preferred Device Silicon Switching Diode Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Continuous Reverse Voltage VR 80 V Recurrent Peak Forward Current IF 200 mA IFM(surge) 500 mA

Contextual Info: New products FLD5F20NP-C A Modulator integrated with DFB Laser Diode Module for 10G bit/s, 80km Optical Transmission FLD5F20NP-C The FLD5F20NP-C is a compact 8mm-thick , high-performance module that monolithically integrates a DFB laser with an electroabsorption

7MBR50UA120

Abstract: 7MBR50UA120 IGBT
Contextual Info: 7MBR50UA120 IGBT Modules IGBT MODULE U series 1200V / 50A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier

CIE1931

Contextual Info: 2.8X1.0mm RIGHT ANGLE SMD CHIP LED LAMP Part Number: AA2810RWS/Z PRELIMINARY SPEC WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN Light Emitting Diode. Static electricity and surge damage the LEDS.

D 1062

Abstract: D 1062 transistor T1929N T380N T869N 3108 DIODE
Contextual Info: W1C - Schaltung ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 3600 V ~ Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D Thyristor