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Contextual Info: HSCH-9161 HSCH-9162 GaAs Detector Diode Data Sheet Description Features The HSCH-916x is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode MBID process. • Low Junction Capacitance • fc >200 GHz • Lower Temperature
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TC611 Diode Model
Abstract: AGILENT TECHNOLOGIES 9161 AGILENT TECHNOLOGIES 9162 gamma detector tc6* agilent TC611 pn#2 hsch-9161 PN diode specifications GaAs Detector Diode
Contextual Info: HSCH-9161 HSCH-9162 GaAs Detector Diode Data Sheet Description Features The HSCH-916x is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode MBID process. • Low Junction Capacitance • fc >200 GHz • Lower Temperature
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hsch-9161hsch-9162hsch-916xhsch916x+105989-6228entc611 diode modelagilent technologies 9161agilent technologies 9162gamma detectortc6* agilenttc611pn#2 hsch-9161pn diode specificationsgaas detector diode
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DTD5555A
Abstract: MK43 06DT dtd5555 SMS-331-01DT SMS-331-02DT SMS-331-03DT sms-331-06dt
Contextual Info: SP3T PIN Diode Switches 0.5 to 18.0GHz Non-Reflective Features: • • • • • Removable SMA Connectors Integral TTL Compatible Drivers Internally Terminated Miniature Outline Very Fast Switching Low Loss and High Isolation • Description: The SMS-331-00DT range of SP3T PIN diode
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33190B
Abstract: 33144A 33102A HP 33134a HP 33144A
Contextual Info: Whnt mL'/iM HP AECWKLAERTDT Switch Driver for Fast SPST PIN Diode Switches Technical Data 33190B Features • TTL Com patible In p u t • H igh Speed Description diode/switch. The HP 33190B is designed specifically for the HP 33142A and 33144A model switches, but can be used to
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1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Contextual Info: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
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hsn278wkhzc10hzc11hzc12+16hzc13hzc15hzc16hzc18hzc20hzc221s2473 diode equivalent1s2473 equivalentdiode cross reference 1s2473diode marking s4 59amarking 62n sot231s2471 equivalentuhf/vhf tv tuner hitachidiode 1n4148 ll-34diode zenner c251n52xx
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NX8350TSxx
Abstract: NX8350TS PX10160E 10 gb laser diode
Contextual Info: Preliminary Data Sheet NX8350TS LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION R08DS0025EJ0100 Rev.1.00 Sep 19, 2010 DESCRIPTION The NX8350TS is a 1 271 to 1 331 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser
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BB215
Abstract: UHF diode
Contextual Info: • bbsa'm 0D24M0T 331 HiAPX N AUER PHILIPS/DISCRETE BB215 b?E D UHF VARIABLE CAPACITANCE DIODE The BB215 is a silicon variable capacitance diode in a hermetically sealed glass envelope SOD-8O and intended fo r application in UHF tuners. The leadless SOD-8O encapsulation is intended fo r surface
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NDL3200
Abstract: NEC k 2134
Contextual Info: DATA SHEET NEC LASER DIODE NDL3200 ELECTRON DEVICE 670 nm BAR CODE READER, POINTER APPLICATION AIGalnP DOUBLE HETEROSTRUCTURE VISIBLE LASER DIODE DESCRIPTION N D L 3 2 0 0 is an A IG alnP 6 7 0 nm visible laser diode and especially developed fo r Bar Code Reader, Pointer.
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Contextual Info: • bbS3^31 002440'! 331 B A P X N AUER PHILIPS/DISCRETE BB215 b?E D UHF VARIABLE CAPACITANCE DIODE The BB215 is a silicon variable capacitance diode in a hermetically sealed glass envelope SOD-80 and intended for application in UHF tuners. The leadless SOD-80 encapsulation is intended for surface
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Contextual Info: SONY SLD322XT High Power Density 0.5 W Laser Diode D escription 3ackage Outline Unit : mm The S L D 3 2 2 X T is a high power, gain-guided laser diode produced by M O C V D method*’ . Com pared lo the S L D 3 0 0 Series, this laser diode has a high brightness
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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DIODE BAT
Abstract: SIEMENS VF 100
Contextual Info: SIEMENS Silicon Crossover Ring Quad Schottky Diode BAT 114-099R Features • High barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code
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BYD67
Abstract: sod87 package sod87 marking code
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BYD67 Ripple blocking diode Product specification Supersedes data of 1998 Nov 20 1999 Oct 20 Philips Semiconductors Product specification Ripple blocking diode BYD67 FEATURES DESCRIPTION • Glass passivated
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WLD3343
Abstract: WTW002 1k trimpot vertical LM4040 WHS302 WHS320 WHY5640
Contextual Info: WLD3343 General Purpose Driver for Laser Diodes Pb FEATURES: GENERAL DESCRIPTION: The WLD3343 is an easy-to-use analog circuit for space contstrained, high-power laser diode applications. The WLD3343 maintains precision laser diode current constant current mode
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Contextual Info: SDD66 40mm RECTIFIER DIODE 7000V / 520A The SDD66 rectifier diode features a nominal 40mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.
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SDD66
Abstract: SDD66KT SDD66MD SDD66MH SDD66MM SDD66MR SDD66MT bokn
Contextual Info: SDD66 40mm RECTIFIER DIODE 7000V / 520A The SDD66 rectifier diode features a nominal 40mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.
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5BJC4100
Abstract: F5BHC 5BBC3820
Contextual Info: General Purpose, Pulse and DC Transient Suppression F5B Series Metallized Polyester Film with Integrated Suppression Diode, 18 – 63 VDC Overview Applications The F5B Series is a metallized polyester film capacitor with an integrated suppression diode encapsulated in a thermosetting
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1n4148 ITT
Abstract: 4148 itt LL4148 n4148 LL4148 dynamic resistance ITT DIODE LL4148-1 150D 1N4148
Contextual Info: ITT SEMICOND/ INTERMETALL blE J> M Mbfl2711 0003152 4T5 M I S I LL4148 Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard JEDEC 1N4148 I- 3.510.1-r Cathode M ark
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SDD66KT
Abstract: SDD66MD SDD66MH SDD66MM SDD66MR SDD66MT
Contextual Info: SDD66 40mm RECTIFIER DIODE 7000V / 520A SPCO The SDD66 rectifier diode features a nominal 40mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.
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5BJC4100
Contextual Info: General Purpose, Pulse and DC Transient Suppression F5B Series Metallized Polyester Film with Integrated Suppression Diode, 18 – 63 VDC Overview Applications The F5B Series is a metallized polyester film capacitor with an integrated suppression diode encapsulated in a thermosetting
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WLD3343
Abstract: 1k trimpot vertical LM4040 WHS302 WHS320 WHY5640 Demo Laser Technology 50k trimpot vertical 10 pin laser diode
Contextual Info: WLD3343 HB General Purpose Driver for Laser Diodes Warning: This is a Low Voltage Device Pb FEATURES: GENERAL DESCRIPTION: The WLD3343 is an easy-to-use analog circuit for space contstrained laser diode applications. The WLD3343 maintains precision laser diode
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DIODE N7
Abstract: N7 diode
Contextual Info: General Purpose, Pulse and DC Transient Suppression F5B Series Metallized Polyester Film with Integrated Suppression Diode, 18 – 63 VDC Overview Applications The F5B Series is a metallized polyester film capacitor with an integrated suppression diode encapsulated in a thermosetting
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R422C
Abstract: MIL-F-3922/54-003
Contextual Info: Agilent R422C mm-Wave Planar-Doped Barrier Detector Data Sheet 26.5 to 40.0 GHz Outstanding Performance The Planar-Doped Barrier PDB diode technology combines the best characteristics of point-contact and low barrier Schottky to provide exceptional performance. This PDB diode technology provides
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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