DIODE 3225 Search Results

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

FMN-G12S

Abstract: fmng12 fmng12s
Contextual Info: SANKEN ELECTRIC CO., LTD. FMN-G12S 1. Scope The present specifications shall apply to Sanken silicon diode, FMN-G12S. 2. Outline 030225 Type Silicon Diode Structure Resin Molded Applications Pulse Rectification，etc. Flammability: UL94V-0 Equivalent 1／4

BC647

Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

77C7

Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

R222 smd

Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Contextual Info: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP

samsung r540

Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Contextual Info: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP

TC1617

Abstract: TCM1617MQR 200B TCM1617 TCM1617EV TCN75
Contextual Info: EVALUATION KIT AVAILABLE TCM1617 SMBus Thermal Sensor with External Diode Input FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The TCM1617 is a serially programmable temperature sensor optimized for monitoring modern high performance CPUs with on-board integrated thermal diodes. Temperature data is converted from the CPU’s thermal diode outputs

200B

Abstract: TC1068 TC1068MQR TCM1617EV TCN75
Contextual Info: EVALUATION KIT AVAILABLE TC1068 SMBus Thermal Sensor with External Diode Input FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ The TC1068 is a serially programmable temperature sensor optimized for monitoring modern high performance CPUs with on-board integrated thermal diodes. Temperature data is converted from the CPU’s thermal diode outputs

200B

Abstract: DK-2750 TC1066 TC1066MQR TCM1617EV TCN75 HIGHWAY 09 16PIN IC PIN DIAGRAM
Contextual Info: EVALUATION KIT AVAILABLE TC1066 *Patent Pending ACPI-Compliant SMBus Thermal Sensor with External Diode Input FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ The TC1066 is a serially programmable temperature sensor optimized for monitoring modern high performance

uPC2581

Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8

sc5 s dc 6v relay

Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997

3225 K50

Abstract: D4401N D660N D748N D1029N D2209N D2659N
Contextual Info: M2 - Schaltung ~ M2K ~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 300 V 2200 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode

74F253

Abstract: IDTQS32253 LS253 QS32253
Contextual Info: IDTQS32253 HIGH-SPEED CMOS QUICKSWITCH DUAL 4:1 MUX/DEMUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH DUAL 4:1 MUX/DEMUX DESCRIPTION: FEATURES: − − − − − − − − Enhanced N channel FET with no inherent diode to Vcc

Contextual Info: Date:- 15 Apr, 2004 Data Sheet Issue:- 1 Rectifier Diode Types W2058LC020 to W2058LC140 Old Type No.: SW12CXC935 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 200-1400 V VRSM Non-repetitive peak reverse voltage, (note 1)

74F253

Abstract: IDTQS32253 LS253 QS32253
Contextual Info: IDTQS32253 HIGH-SPEED CMOS QUICKSWITCH DUAL 4:1 MUX/DEMUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH DUAL 4:1 MUX/DEMUX DESCRIPTION: FEATURES: − − − − − − − − Enhanced N channel FET with no inherent diode to Vcc

Contextual Info: IDTQS32257 HIGH-SPEED CMOS QUICKSWITCH QUAD 2:1 MUX/DEMUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH QUAD 2:1 MUX/DEMUX DESCRIPTION: FEATURES: − − − − − − − − Enhanced N channel FET with no inherent diode to Vcc

74F257

Abstract: 74FCT257 QS32257
Contextual Info: IDTQS32257 HIGH-SPEED CMOS QUICKSWITCH QUAD 2:1 MUX/DEMUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH QUAD 2:1 MUX/DEMUX DESCRIPTION: FEATURES: − − − − − − − − Enhanced N channel FET with no inherent diode to Vcc

W2058LC

Abstract: sw12cxc935 W2058LC140 D-68623 W2058 w2058l
Contextual Info: Date:- 15 Apr, 2004 Data Sheet Issue:- 1 Rectifier Diode Types W2058LC020 to W2058LC140 Old Type No.: SW12CXC935 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 200-1400 V VRSM Non-repetitive peak reverse voltage, (note 1)

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

SN76670

Abstract: sn76003 SN76660 SN76640 SN7401 SN72747 SN76013 SN76630 SN72820 SN76001
Contextual Info: Ordering Instructions and Mechanical Data INTEGRATED CIRCUITS MECHANICAL DATA ORDERING INSTRUCTIONS Electrical characteristics presented in this catalog, unless otherwise noted, apply for circuit type{$ listed in the page heading regardless of package. Except for diode arrays, ECL, and MOS devices, the availability of a circuit function in a

100uF capacitor

Abstract: smd transistor 2a SANYO 100uf 10uf 25V capacitor 2.2uH inductor inductor 22uh Inductor 100uf 22uH SMD 603 capacitor smd 2a transistor
Contextual Info: STMicroelectronics: DC-DC EVAL6902D QTY 1 1 1 1 1 1 1 1 1 1 1 Reference Cin Cout Diode Inductor Device R1 R2 R3 C3 C4 Rsense May-07 Part Description 10uF 15% 25V ceramic capacitor 100uF 10V tantalum capacitor 2A 25V low drop power schottky rectifier 22uH inductor

PHILIPS SCR

Abstract: BYV1030 equivalent 1N270 diode equivalent
Contextual Info: AN763 Latch-Up Protection of CMOS ICs This emitter base junction of the parasitic bipolar is the parasitic diode that is also found in power MOSFETs. One of these diodes exists in every CMOS structure for both N- and P-channel devices; correspondingly, there exists a parasitic bipolar for every MOSFET

uPD3599

Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

free transistor equivalent book 2sc

Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of