DIODE 31 DF Search Results

Contextual Info: FEA TU RES & • 3 0 - 3 0 0 MHz ■ 1 dB LSB, 31 dB Range ■ Constant Phase MODEL NO. DA0659 PIN Diode 5 Section Attenuator ■ 2.2 dB Insertion Loss ■ +37 dBm 3rd Order Intercept 5 BIT ■ TTL Driver ■ 38 Pin DIP IN/OUT 38 GNO 37 36 35 34 33 32 31 30

PT7420

Abstract: G957 IEC825 neophotonics PT7420-81 NeoPhotonics
Contextual Info: www.neophotonics.com VER B/ 111908 PT7420-31 2 -2W(+) OC-3 LR-1 / STM L-1.1 SFP Transceiver 1. Features 1.1. Transceiver unit with independent 1310nm DFB Laser diode transmitter InGaAs PIN photodiode receiver 1.2. Compliant with SFP MSA and SFF-8472 with duplex LC receptacle

PT7620

Abstract: PT7620-31-2W pt7620-32-2w PT7620-31 G957 G958 IEC825 IC 2 5/PT7620-41-2W
Contextual Info: www.neophotonics.com VER B/ 111908 PT7620-31 2 -2W(+) OC-3 LR-2 / STM L-1.2 SFP Transceiver 1. Features 1.1. Transceiver unit with independent 1550nm DFB Laser diode transmitter InGaAs PIN photodiode receiver 1.2. Compliant with SFP MSA and SFF-8472 with duplex LC receptacle

opnext

Abstract: LB7677L Hitachi DSA0045 opnext ps Opnext t
Contextual Info: Preliminary Technical Data Rev. 0.1, July 31, 2001 LB7677L op next Powered by HITACHI Laser Diode Module Preliminary Product Disclaimer This preliminary data sheet is provided to assist you in the evaluation of functional samples of the products that are under development and for which a reliability test has not been

kingbright DE

Abstract: DF3G diode 31 DF DE22 DF3GD
Contextual Info: LIGHT BARS Kingbright DE/2 7.5x14mm DE/4 15x15mm DF-3 6.8x19.9mm Features Description lUNIFORM The Green and Super Bright Green source color devices LIGHT EMITTING AREA. lEASILY MOUNTED ON P.C. BOARDS OR INDUSTRY STANDARD SOCKETS. lFLUSH MOUNTABLE. lEXCELLENT ON/OFF CONTRAST.

diode 31 DF

Abstract: KDA0387 diode df 85c
Contextual Info: 6.8mmx19.9mm LIGHT BARS DF-3ID HIGH EFFICIENCY RED DF-3GD GREEN DF-3SRD SUPER BRIGHT RED DF-3YD YELLOW DF-3SGD SUPER BRIGHT GREEN Description Features !UNIFORM !EASILY LIGHT EMITTING AREA. MOUNTED ON P.C. BOARDS OR INDUSTRY STANDARD SOCKETS. !FLUSH !CAN ON/OFF CONTRAST.

Contextual Info: 6.8mmx19.9mm LIGHT BARS DF3ID HIGH EFFICIENCY RED DF3GD GREEN DF3SRD SUPER BRIGHT RED DF3YD YELLOW DF3SGD SUPER BRIGHT GREEN Description Features !UNIFORM !EASILY LIGHT EMITTING AREA. MOUNTED ON P.C. BOARDS OR INDUSTRY STANDARD SOCKETS. !FLUSH !CAN ON/OFF CONTRAST.

Au80Sn20

Abstract: ML9XX22 DFB-LASER ML9XX11 ML9SM11 ML9SM22 1602.31
Contextual Info: MITSUBISHI LASER DIODES ML9XX11/ML9XX22 SERIES Notice: Some parametric limits are subject to change. TYPE NAME 2.5Gbps DWDM InGaAsP DFB-LASER DIODE ML9SM11/ML9SM22 DESCRIPTION FEATURES ML9XX11 and ML9XX22 series are DWDM 2.5Gbps directly • Available distance: 175km Max

AON6908A

Abstract: DFN5X6
Contextual Info: AON6908A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary The AON6908A is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN5x6 package. The Q1 "High

CJ5853DC

Abstract: marking 27A DIODE mosfet low vgs 1A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB3x2-08L-B Power management Dual-transistors CJ5853DC P-channel MOSFET and Schottky Diode FEATURES • Featuring a MOSFET and Schottky Diode • Independent Pinout to each Device to Ease Circuit Design

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB3x2-08L-B Power management Dual-transistors CJ5853DC P-channel MOSFET and Schottky Diode DFNWB3×2-08L-B FEATURES • Featuring a MOSFET and Schottky Diode • Independent Pinout to each Device to Ease Circuit Design

diodo smd

Abstract: DIODO 55 SMD DIODE D 92 02 M-02 smd diodo Diodo SCHOTTKY JT MARKING DF20PC3M diodo 15v diodo smd JS
Contextual Info: Schottky Barrier Diode Twin Diode mnm DF20PC3M o u t lin e 30V 20A F e a tu re • SMD • SMD • î 3 V f =0.4V • Ultra-Low V f=0.4V • High lo Rating-Small-RKG • /w x u -æ s B m t • Reverse connect protection for DC power source • DC OR-output

smd diode marking JC

Abstract: DIODE BJE DIODE BJE smd marking JC diode df30sc3 smd marking 5G DF30SC3ML hm marking smd DIODE SHINDENGEN DIODE sto220
Contextual Info: Schottky Barrier Diode Twin Diode m n m DF30SC3ML o u tlin e Unit I mm Weight 1.5« Typ Package ! STO-220 0 7h£9(M ) 30V 30A Feature • SMD • SMD 0 45 V • < S V f= . • P rrsm 0 45V • Low V f= . 7 ’K 3 > î / x (S K î Polarity • P r r s m R a t in g

DL760

Contextual Info: DATA SHEET LASER DIODE NDL7603P Series 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE DESCRIPTION The NDL7603P Series is a 1 310 nm phase-shifted DFB Distributed Feed-Back laser diode module with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal

Contextual Info: IXKF 40N60SCD1 COOLMOS * Power MOSFET ID25 VDSS RDSon typ. trr with Series Schottky Diode and Ultra Fast Antiparallel Diode = = = = 38 A 600 V Ω 60 mΩ 70 ns in High Voltage ISOPLUS i4-PACTM Preliminary data 5 DS DF T 1 1 2 2 5 Features MOSFET T Symbol

DFM300BXS12-A000

Abstract: DFM300LXS12-A000
Contextual Info: DFM300BXS12-A000 DFM300BXS12-A000 Fast Recovery Diode Module Replaces DFM300LXS12-A000 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop ■ Isolated Base PDS5724-1.2 July 2004 KEY PARAMETERS VRRM VF typ (max)

Contextual Info: IXKF 40N60SCD1 ID25 VDSS RDSon typ. trr CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode = = = = 38 A 600 V Ω 60 mΩ 70 ns in High Voltage ISOPLUS i4-PACTM Preliminary data 5 DS DF T 1 1 2 2 5 Features MOSFET T Symbol Conditions

Contextual Info: IXKF 40N60SCD1 ID25 VDSS RDSon typ. trr CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode = = = = 38 A 600 V Ω 60 mΩ 70 ns in High Voltage ISOPLUS i4-PACTM Preliminary data 5 DS DF T 1 2 Features MOSFET T Symbol Conditions

hm marking smd DIODE

Abstract: DF20JC10 TC121 SHINDENGEN DIODE DIODE marking VU
Contextual Info: Schottky Barrier Diode Twin Diode mnm DF20JC10 o u tlin e 100V 20A Feature • SM D • SMD • filR = 0 .7 m A • L o w lR =0.7m A • jw is æ ç ë c u ic < L ' • Resistance for thermal run-away • High lo Rating -Small-PKG • y -S P C .L C D t-^ ^

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB3x2-08L-B Power Management MOSFETS-Schottky CJ5853DC P-channel MOSFET and Schottky Barrier Diode DFNWB3×2-08L-B FEATURES • Featuring a MOSFET and Schottky Diode • Independent Pinout to Each Device to Ease Circuit Design

GR-468

Abstract: c65 diode dfb laser diode cwdm dfb laser diode ED 03 Diode
Contextual Info: 1310-1610 nm CWDM DFB Laser Diode LDT-X1XX1M-H Features • InP/InGaAsP MQW structure • 5mW uncooled operation from 0 to 70ºC • Hermetically sealed package • Built-in InGaAs monitor photodiode • Complies with Bellcore GR-468 • Single mode operation with high SMSR

C20 diode, TO

Abstract: laser diode Spectral Width 1 nm, 1550 nm, power 2 dfb laser diode 1550 ingaasp 1550 laser diode ED 03 Diode GR-468 laser diode 1550 ns luminent single mode laser diode 1550 ns single mode PIN photodiode 1310 dfb laser diode
Contextual Info: 1310/1550 nm DFB Laser Diode LDT-X1XX1Z-H Features • InP/InGaAsP MQW structure • 5mW uncooled operation from 0 to 70ºC • Hermetically sealed package • Built-in InGaAs monitor photodiode • Complies with Bellcore GR-468 • Single mode operation with high SMSR

Contextual Info: MSWSH-020-30 PIN DIODE SHUNT SWITCH ELEMENT 4 3 1 3 2,4 1 2 2012 Plastic Molded DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm QFN package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA and other

Aeroflex ATC 600

Abstract: bzx79-b24 MSWSH-020-30
Contextual Info: MSWSH-020-30 PIN DIODE SHUNT SWITCH ELEMENT 4 3 1 3 2,4 1 2 2012 Plastic Molded DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm QFN package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA and other