DIODE 3000V Search Results
DIODE 3000V Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE 3000V Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
DS1104SG
Abstract: DS1104SG25 DS1104SG26 DS1104SG27 DS1104SG28 DS1104SG29 DS1104SG30
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ds1104sgds4167-4ds4167-50000a+6 | |
RECTIFIER DIODE 1000A
Abstract: 1000A 100V power diode 3 diodes 3 phase half-wave rectifier single phase half controlled rectifier DS1104SG DS1104SG25 DS1104SG26 DS1104SG27 DS1104SG28 DS1104SG29
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ds1104sgds4167-4ds4167-50000a+10 | |
XT1200Contextual Info: DS1104SG DS1104SG Rectifier Diode Replaces August 2001 version, DS4167-4.0 DS4167-5.0 December 2002 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 3000V ■ High Surge Capability IF AV 1849A IFSM APPLICATIONS 20000A ■ Rectification ■ Freewheel Diode |
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ds1104sgds4167-4ds4167-50000a+6 | |
DS1104SG
Abstract: DS1104SG25 DS1104SG26 DS1104SG27 DS1104SG28 DS1104SG29 DS1104SG30 DC DC SET UP 3A
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ds1104sgds4167-3ds4167-40000a+7 | |
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Contextual Info: DS1104SG DS1104SG Rectifier Diode Replaces August 2001 version, DS4167-4.0 DS4167-5.0 December 2002 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 3000V ■ High Surge Capability IF AV 1849A IFSM APPLICATIONS 20000A ■ Rectification ■ Freewheel Diode |
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ds1104sgds4167-4ds4167-50000a+5 | |
AN4839
Abstract: DS1104SG DS1104SG25 DS1104SG26 DS1104SG27 DS1104SG28 DS1104SG29 DS1104SG30 1571A
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ds1104sgds4167-3ds4167-40000a+8 | |
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Contextual Info: AUGUST 1995 DS1104SG DS4167-2.3 DS1104SG RECTIFIER DIODE APPLICATIONS KEY PARAMETERS 3000V VRRM 1315A IF AV 20000A IFSM • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers. FEATURES ■ Double Side Cooling. |
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ds1104sgds4167-20000ads1104sg30+5 | |
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Contextual Info: AUGUST 1995 DS2004SF DS4188-2.4 DS2004SF RECTIFIER DIODE APPLICATIONS KEY PARAMETERS 3000V VRRM 1960A IF AV 31250A IFSM • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers. FEATURES ■ Double Side Cooling. |
Original |
ds2004sfds4188-21250ads2004sf30+5 | |
175C
Abstract: TR1104SG TR1104SG25 TR1104SG26 TR1104SG27 TR1104SG28 TR1104SG29 TR1104SG30
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OCR Scan |
tr1104sg0000atr1104sg30tr1104sg29+5 | |
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Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900DB-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM900DB-90S ● IF . 900A ● VRRM . 4500V |
Original |
rm900db-90s20k/kw | |
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Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM600HE-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM600HE-90S ● IF . 600A ● VRRM . 4500V |
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rm600he-90s39k/kw | |
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Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900DB-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM900DB-90S ● IF . 900A ● VRRM . 4500V |
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rm900db-90s20k/kw | |
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Contextual Info: s e GEC P L E S S E Y augustes SEMI CO NDUC TOR S DS4188-2.4 DS2004SF RECTIFIER DIODE KEY PARAMETERS VRRH 3000V W , 1960A 1rs« 31250A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers. |
OCR Scan |
ds4188-2ds2004sf1250ads2004sf30+5 | |
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Contextual Info: @ DS1104SG M IT E L Rectifier Diode S E M IC O N D U C T O R Supersedes August 1995 version, DS4167 - 2.3 DS4167 - 2.4 March 1998 APPLICATIONS KEY PARAMETERS VRRM 3000V IF av, 1315A 'fs m 20000A • Rectification. ■ Freewheel Diode. ■ DC Motor Control. |
OCR Scan |
ds1104sgds41670000ads1104sg30+5 | |
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Contextual Info: Technische Information / Technical Information Schnelle Diode Fast Diode D 1331 SH 45T S Features • Specially designed for snubberless operation • 140°C maximum junction temperature • Low losses, soft recovery • Electroactive passivation by a-C:H |
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Contextual Info: Technische Information / Technical Information Schnelle Diode Fast Diode D 1331 SH 45T S Features • Specially designed for snubberless operation • 140°C maximum junction temperature • Low losses, soft recovery • Electroactive passivation by a-C:H |
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igbt 3 KAContextual Info: Technische Information / Technical Information Schnelle Diode für hartschaltende GCT/IGBT Umrichter Fast Diode for hard-switched GCT/IGBT converters D 1331 SH 45T S Vorläufige Daten Preliminary Data Features • Specially designed for snubberless operation |
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igbt 3 ka | |
1031 sh
Abstract: 65DSH45
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Original |
1031 sh65dsh45 | |
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Contextual Info: Technische Information / Technical Information Schnelle Diode Fast Diode D 1181 SX 60T S Vorläufige Daten . Preliminary Data . Features • Specially designed for operation with small snubber • 140°C maximum junction temperature • Low losses, soft recovery |
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k 1441Contextual Info: Technische Information / Technical Information Schnelle Diode Fast Diode D 1441 SX 65T S Vorläufige Daten . Preliminary Data . Features • Specially designed for operation with small snubber • 140°C maximum junction temperature • Low losses, soft recovery |
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k 1441 | |
fast diode 3000V
Abstract: diode 0844 k 1441 1441 SI 01007
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Original |
fast diode 3000vdiode 0844k 14411441+1 | |
d1641Contextual Info: Technische Information / Technical Information Schnelle Diode Fast Diode D 1641 SX 45T S Vorläufige Daten . Preliminary Data . Features • Specially designed for operation with small snubber • 140°C maximum junction temperature • Low losses, soft recovery |
Original |
d1641 | |
1031 sh
Abstract: igbt 3 KA fast diode 3000V FAST DIODE igbt failure rate calculation of IGBT parameter
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Original |
1031 shigbt 3 kafast diode 3000vfast diode+2 | |
diode 2500AContextual Info: Technische Information / Technical Information Schnelle Diode Fast Diode D 911 SH 45T S Features • Specially designed for snubberless operation • 140°C maximum junction temperature • Low losses, soft recovery • Electroactive passivation by a-C:H Elektrische Eigenschaften / Electrical properties |
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50hifmdiode 2500a | |