DIODE 2M Search Results

DKR200AB60

Contextual Info: DIODE MODULE（NON-ISOLATED TYPE） DKR200AB60 DKR200AB60 is a high speed fast recovery dual diode module designed for high power switching application. DKR200AB60 is suitable for high frequency application requiring low loss and high speed control. ● High Speed Diode trr≦200ns

operational amplifier k161

Abstract: K161 laser diode driver circuit automatic power control SY88902 SY88903 SY88904 SY88904KC SY88904KCTR SY88904KH SY88922
Contextual Info: FIBER OPTIC MODULE CONTROLLER WITH APC Micrel, Inc. DESCRIPTION FEATURES • DC bias current adjustable to 25mA ■ Buffered Loss-of-Signal output when used with SY88903 ■ Controlled laser diode turn on ■ Laser diode over-current detect ■ Monitor diode power control circuit

capacitor 10uf 16v 1206

Abstract: capacitor 10uf 16v
Contextual Info: MIC2290 Micrel MIC2290 2mm x 2mm PWM Boost Regulator with Internal Schotty Diode General Description Features The MIC2290 is a 1.2MHz , PWM, boost-switching regulator housed in the small size 2mm × 2mm MLF -8 package. The MIC2290 features an internal Schottky diode that reduces

SC CONNECTOR DRAWING

Abstract: lc CONNECTOR DRAWING STM-16
Contextual Info: JOG-01146 Rev.5 Optical Components Rev. 5 [10. 2008] OL5450L-2,OL5451L-2, OL5453L-2 Series 2mWCoaxial DFB Laser Diode Modules 1. DESCRIPTION The OL5450L-2, OL5451L-2, OL5453L-2 series consist of an MQW-DFB laser diode, a monitor PD, a single-stage optical isolator, a single-mode fiber and a coaxial package.

diode 107 10K 501

Abstract: G103 G003 G101 G102 32MHz quartz RESONATOR amd IC amplifier G701 11nQ
Contextual Info: iC-VJ, iC-VJZ LASER DIODE CONTROLLER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ Transmitter for laser light barriers from 1 to 200kHz ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ◊ ◊ Laser diode driver of up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode

diode 1334

Abstract: 1334 diode power diode with piv of 30v CA3141E CA3141 high voltage diodes MS-001-BB VF10 e16 diode 533 1334 diode
Contextual Info: CA3141 S E M I C O N D U C T O R High-Voltage Diode Array For Commercial, Industrial and Military Applications July 1996 Features Description • Matched Monolithic Construction - VF Match Each Diode Pair . . . . 0.55mV At IF = 1mA The CA3141E High Voltage Diode Array Consists of ten general purpose high reverse breakdown diodes. Six diodes are

lc CONNECTOR DRAWING

Abstract: STM-16
Contextual Info: JOG-01146 Rev.2 OKI Electronics Components OL5450L-2,OL5451L-2, OL5453L-2 Series Rev. 2 [6. 2004] Preliminary 2mWCoaxial DFB Laser Diode Modules 1.DESCRIPTION The OL5450L-2, OL5451L-2, OL5453L-2 series consist of an MQW-DFB laser diode, a monitor PD, a single-stage optical isolator, a single-mode fiber and a coaxial package.

laser driver TTL circuits

Abstract: 4023N 6 pin laser diode automatic laser power control MAX3261 MAX3261CCJ MAX3261ECJ 4015N MAX3261-FG07
Contextual Info: 19-0323; Rev 4; 8/97 Single +5V, Fully Integrated, 1.25Gbps Laser Diode Driver _Applications Laser Diode Transmitters 531Mbps and 1062Mbps Fibre Channel _Features ♦ Rise Times Less than 250ps ♦ Differential PECL Inputs

AL01Z

Abstract: diode al01
Contextual Info: SANKEN ELECTRIC CO., LTD. AL01Z 1. Scope The present specifications shall apply to Sanken silicon rectifier diode, AL01Z. 2. Outline Type Silicon Rectifier Diode Planar type Structure Resin Molded Applications High Frequency Rectification, etc. 3. Flammability

AU01

Contextual Info: SANKEN ELECTRIC CO., LTD. AU01 1. Scope The present specifications shall apply to Sanken silicon rectifier diode, AU01. 2. Outline Type Silicon Rectifier Diode Mesa Type Structure Resin Molded Applications High Frequency Rectification, etc. 3. Flammability

rm resistor

Abstract: laser diode driver ic 2rc diode datasheet 24P2N-B laserdiode application 2rm diode M66516FP
Contextual Info: MITSUBISHI 〈DIGITAL ASSP〉 MITSUBISHI 〈DIGITAL ASSP〉 M66516FP M66516FP LASER-DIODE DRIVER/CONTROLLER LASER-DIODE DRIVER/CONTROLLER PIN CONFIGURATION TOP VIEW VCC1 SWITCHING CURRENT SETTING INPUT 1 VL1 OUTPUT TO SWITCHING CURRENT SETTING LOAD 1RC 1

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTX301U EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Including two TR, Diode devices in USV. (Ultra Super mini type with 5 leads)

EM01A

Contextual Info: SANKEN ELECTRIC CO., LTD. EM01A １ Scope The present specifications shall apply to Sanken silicon diode, EM01A. ２ Outline Type Silicon Rectifier Diode Mesa type Structure Resin Molded Applications Commercial Frequency Rectification, etc Flammability: UL94V-0 (Equivalent)

ES01A

Contextual Info: SANKEN ELECTRIC CO., LTD. ES01A １ Scope The present specifications shall apply to Sanken silicon diode, ES01A. ２ Outline Type Silicon Rectifier Diode Mesa type Structure Resin Molded Applications Pulse Rectification, etc ３ Flammability UL94V-0 (Equivalent)

Contextual Info: TSS42U/43U 0.2 Amp Surface Mount Schottky Barrier Diode Small Signal Diode 0603 W T L Features C —Designed for mounting on small surface —Extremely thin / leadless package D —Low capacitance —Low forward voltage drop —Pb free version and RoHS compliant

30v 1,3w zener diode

Abstract: bzx85c15 BZX85C5V1 bzx85c12 BZX85C6V2 zener diode 12v 0.5 w BZX85C10 BZX85C11 BZX85C3V3-BZX85C56 BZX85C30
Contextual Info: BZX85C3V3-BZX85C56 1.3W,5% Tolerance Zener Diode Small Signal Diode DO-41 Axial Lead HERMETICALLY SEALED GLASS D Features C A —Wide zener voltage range selection : 3.3V to 56V —VZ Tolerance Selection of ±5% —Designed for through-Hole Device Type Mounting.

Contextual Info: LM185-1.2QML LM185-1.2QML Micropower Voltage Reference Diode Literature Number: SNVS384 LM185-1.2QML Micropower Voltage Reference Diode General Description The LM185-1.2 is a micropower 2-terminal band-gap voltage regulator diodes. Operating over a 10µA to 20mA current

NTE3000

Contextual Info: NTE3000 Light Emitting Diode Water Clear, High Efficiency Red Description: The NTE3000 is a high efficiency red source color device made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode in a two lead epoxy package with a clear lens. The

Contextual Info: ZOWIE Low VF Rectifier Diode BGC20DLH THRU BGC20MLH Low VF Rectifier Diode OUTLINE DIMENSIONS Case : 2114 FEATURES Halogen-free type Lead free product, compliance to RoHS GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead less chip form, no lead damage

Laser Diode Frame Type

Abstract: DL-3150-105
Contextual Info: Ordering number : ENN7564 Infrared Laser Diode DL-3150-105 DL-3150-105 Infrared Laser Diode Frame Type Package Dimensions 5 3.2 -C 2- 0. 1.9 • Wavelength : 790 nm (Typ.) • Frame type • Compact lightweight thin package • Straight leads 0.7 0.7±0.12

LM103 zener

Abstract: LM103 7702806XA
Contextual Info: MILITARY DATA SHEET Original Creation Date: 12/02/96 Last Update Date: 12/20/96 Last Major Revision Date: 12/02/96 MNLM103-3.0-H REV 0A0 REFERENCE DIODE General Description The LM103 is a two-terminal monolithic reference diode electrically equivalent to a

Contextual Info: ESJA09 10kV,12kV/5mA Outline Drawings HIGH VOLTAGE DIODE ESJA09 is high reliability resin molded type high voltage diode in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin. Cathode Mark Lot No. o 2.5 Features 27 min.

dr25 diode specifications

Abstract: DR25 Diode OP 741 L6690 free download led wiring guide LLD1002E01
Contextual Info: INFRARED PULSED LASER DIODE L6690 Figure 2: Typical Radiant Power vs. Pulsed Forward Current INFRARED PULSED LASER DIODE Ta=25℃ (Ta=25℃) 100 RELATIVE RADIANT POWER (%) 2.5 ep 2.0 1.5 1.0 0.5 1.0 1.5 2.0 2.5 40 20 830 3.0 ●High duty ratio (DR≦2.5%)

Contextual Info: 1. SCOPE This specification provide the' ratings and the requirements for high voltage silicon diode ESJA82-14A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.