DIODE 2A Search Results

STTA206S

Abstract: SMC 4A 400v diode 400v 2A ultrafast DIODE 2A 400V TRANSISTOR 45 P3
Contextual Info: STTA206S TURBOSWITCH  "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE" OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY

UM9701

Contextual Info: UM9701 PIN DIODE Low Resistance, Low Distortion, RF Switching Diode Features Description • • • • • • The UM9701 PIN diode was designed for low resistance at low forward bias current and low reverse bias capacitance. This unique Microsemi design

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD SLVU2.8 Preliminary DIODE LOW VOLTAGE DIODE FOR ESD AND LATCH-UP PROTECTION  DESCRIPTION The UTC SLVU2.8 is a low voltage diode, it uses UTC’s advanced technology to provide customers with low leakage current, low capacitance, low operating and clamping voltage, etc.

TSC5302DCH

Abstract: TSC5302DCP DIODE G14
Contextual Info: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC=1A, IB=0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation

BYR79-600

Abstract: byr79
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary BYR79-600 DIODE ULTRA FAST-RECOVERY RECTIFIER DIODE „ DESCRIPTION The UTC BYR79-600 is a rectifier diode providing the designers with ultra-fast switching and low switching loss. It features low forward voltage drop, ultra fast reverse recovery times with very low

DS5BN

Abstract: 240 volts AC to 5 volts DC Bridge rectifier LOW FORWARD VOLTAGE DROP DIODE RECTIFIER L60C 110 V Ac to 110 V Dc rectifier LOW FORWARD VOLTAGE DROP DIODE BRIDGE DS5B rectifier diode assembly mitsubishi bridge rectifier DIODE RECTIFIER BRIDGE SINGLE DS5BN
Contextual Info: MITSUBISHI RECTIFIER DIODE STACK ASSEM BLY DS5BN LO W P O W E R R E C T IFIER U SE DESCRIPTION Mitsubishi type DS5BN series are low power rectifier diode stack assemblies using high reliability rectifier diode. These stack assemblies are constructed in single-phase full-wave bridge configuration and are used by the natural

S12S60SIC

Abstract: RW marking
Contextual Info: Schottky Barrier Diode Twin Diode • ¿m u OUTLINE S 12S 60S IC 6 0 0 V 1 2A Feature • Tj=175TC • Tj=175°C • TVF • TVF • IR = 4 0 0 y A • IR=400pA Main Use • Switching Regulator • H om e Appliance, Office Automation • S S • Communication

rca tube 26

Abstract: rca tube 80 ST-12 Scans-0017379 RCA tube 2A5 tube
Contextual Info: I XU».» RCA-2A6 DUPLEX-DIODE HIGH-MU TRIODE The 2A6 is a heater type of tube consisting of two diodes and a highmu triode in a single bulb. It is for use as a combined detector, amplifier, and automatic-volume-control tube in radio receivers designed for its characteristics. For diode-detector consideration*,

BJT 3904

Contextual Info: LM95233 LM95233 Dual Remote Diode and Local Temperature Sensor with SMBus Interfaceand TruThrm Technology Literature Number: SNIS145D LM95233 Dual Remote Diode and Local Temperature Sensor with SMBus Interface and TruTherm Technology General Description

Diode BFT smd

Contextual Info: Schottky Barrier Diode mtmm o u t l in e Single Diode D1FP3 30V 2A Feature • /JvgySMD Small SMD Ultra-Low V f= 0.4 V • Î b V f=0.4V Main Use • Reverse connect protection for DC power source • DC OR-output • D C th ^ O R ffl • DC /D C • DC/DC Converter

Contextual Info: Schottky Barrier Diode Axial Diode mtm D2S4M OUTLINE Unit: mm Weight 0.38g Typ Package I AX078 30 40V 2A 8 3. Feature • PRRSM^y^ VÍ/X<SÍ¡E • D C /D C 3 • * Œ .y -A .O A * itg * <R0 H (D * Main Use • • • • • 7 27.5 5 27.5 • Tj=150°C

KDZ11VY

Abstract: KDZ16V-Y marking a2 diode usc
Contextual Info: SEMICONDUCTOR KDZ2.0V~36V TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. L A H F ・Nominal Voltage Tolerance About ±6%. 1 E ・Small Package : USC K CATHODE MARK FEATURES

2KV DIODE

Contextual Info: 2T2K 2KV Diode, Axial Leaded Standard Recovery Rectifier Diode POWER DISCRETES Description - PRELIMINARY Features Quick reference data Low reverse leakage current Hermetically sealed. Good thermal shock resistance Low forward voltage drop Metallurgically bonded, CAT 1 bond.

zener diode numbering system

Abstract: uhf amp circuit diagrams Teledyne Relays 28vdc 116cm IN 965 b zener diode Power supply AC to DC zener diode er116c
Contextual Info: TELEDYNE RELAYS SERIES CENTIGRID ESTABLISHED RELIABILITY RELAY 116C DPDT CMOS COMPATIBLE SERIES DESIGNATION RELAY TYPE 116C DPDT general purpose relay with internal power MOSFET driver, Zener diode gate protection and diode coil suppression INTERNAL CONSTRUCTION

A12 diode

Abstract: diode 0450
Contextual Info: TESDQ5V0ULC Ultra Low Capacitance ESD Protection Diode Small Signal Diode 0402 DFN1006 Features Cell Phone Handsets and Accessories Microprocessor based equipment Personal Digital Assisitants(PDA's) Notebooks,Desktops,and Servers Pb free version, RoHS compliant, and Halogen free

Contextual Info: Rectifier Diode Surface Mounting Device Single Diode •*WfN-äsH OUTLINE DIMENSIONS Package : M1F M 1 F E Unit : mm 4 0 400V 2A + - — N— i i V - ■K v — ? Cathode m ark < 43 f i £ 2 .8 101 ¡E88 "37 ?00° « ¡ p 1 2 1:6 2 n y H B -g - W D ate code

WLD3343

Abstract: WTW002 1k trimpot vertical LM4040 WHS302 WHS320 WHY5640
Contextual Info: WLD3343 General Purpose Driver for Laser Diodes Pb FEATURES: GENERAL DESCRIPTION: The WLD3343 is an easy-to-use analog circuit for space contstrained, high-power laser diode applications. The WLD3343 maintains precision laser diode current constant current mode

Contextual Info: Ordering number : ENN6980 CPH5804 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171

fairchild micrologic

Abstract: D9109 10-JK 9110 F 9109
Contextual Info: HIGH LEVEL LOGIC DIODE-TRANSISTOR MICROLOGIC. INTEGRATED CIRCUITS COMPOSITE DATA SHEET A FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRODUCT O'C TO 75*C TEMPERATURE RANGE GENERAL DESCRIPTION— The Fairchild High Level Logic Diode-Transistor Micrologic® Integrated Circuit

ZS20

Abstract: ZHCS2000ta ZHCS2000 marking ZS20
Contextual Info: ZHCS2000 40V SURFACE MOUNT SCHOTTKY BARRIER DIODE Product Summary Features and Benefits • • Description and Applications • • • • • A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage

Contextual Info: VSMY7850X01 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • 21783 • • • • • DESCRIPTION VSMY7850X01 is an infrared, 850 nm emitting diode based

Contextual Info: VSMY7850X01 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • 21783 • • • • • DESCRIPTION VSMY7850X01 is an infrared, 850 nm emitting diode based

MCH3312

Abstract: CPH5854 SB1003M3 A05166 marking YG
Contextual Info: CPH5854 Ordering number : ENA0516 SANYO Semiconductors DATA SHEET CPH5854 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type containing a P-Channel MOSFET MCH3312 and a Schottky Barrier Diode (SB1003M3),

J-STD-020B

Contextual Info: VSMG2700 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm RoHS Compliant, Released for Lead Pb -free Solder Process Description VSMG2700 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology in a miniature PLCC-2 SMD package.