DIODE 250V 250MA Search Results

CMZ5945B

Contextual Info: DEMO MANUAL DC2027A LTC4364HDE-1, 2 12V Surge Stopper with Ideal Diode Description Demonstration circuit 2027A showcases the LTC 4364 surge stopper with ideal diode in a 12V, 1A application. DC inputs of up to 80V and transients to 250V are limited to just 28.7V at the output. Sagging and reverse-polarity

Contextual Info: CRD1615-8W CRD1615-8W 8 Watt Reference Design Features General Description • Quasi-resonant Flyback with Constant-current Output The CRD1615-8W reference design demonstrates the performance of the CS1615 single stage dimmable AC/DC LED driver IC with a 250mA output driving 10  LEDs in

Contextual Info: LTC3638 High Efficiency, 140V 250mA Step-Down Regulator Features n n n n n n n n n n Wide Operating Input Voltage Range: 4V to 140V Internal Low Resistance Power MOSFET No Compensation Required Adjustable 20mA to 250mA Maximum Output Current Low Dropout Operation: 100% Duty Cycle

ups 500va 220v 50hz circuit diagram

Abstract: 230v ac to 12v dc without transformer circuit 220V AC 12V DC regulated switching schematic diagram 48v dc motor speed controller TRANSISTOR SMD 58W dc 220v motor speed control circuit with scr Fuse RH A4 2A 250V OMRON C200H relay 5 pin 12v 6a ujt 2646
Contextual Info: Automation Controls Group Catalog Control Panel Relays Safety Relays Interface Terminal Automation Controls Group Catalog 2010-2011 panasonic-electric-works.net/ac Control Panel Relays¥Safety Relays¥Interface Terminal 2010-2011 Please contact .

Diode 200mA

Contextual Info: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SOD-123 Package Weight mg 10 Product Group Type No. SD101AW – SD101CW 1N5711W BAT42W – BAT43W MMSD301 MMSD701 SD103AW – SD103CW SS0520 – SS0540 SS1040 1N4148W 1N4151W

RB751V-40

Contextual Info: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SOD-323 Product Group Type No. SD101AWS – SD101CWS RB751V-40 BAS70WS 1SS357 RB501V-40 MMDL101 MMBD717WS BAT42WS / BAT43WS BAT54HS / BAT54WS MMDL301 BAS40WS MMDL770 1SS404

diode switching

Contextual Info: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SOT-23 Package Weight mg 8 Product Group Type No. MMBD352 – MMBD355 BAS70 / A / C / S DAN217, DAP202, DAN202 MMBD101 MMBD717 / A / C / S BAT54 / A / C / S MMBD301 BAS40 / A / C / S

schematic diagram 230VAC to 24VDC POWER SUPPLY

Abstract: 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P
Contextual Info: farnell.com element14.com 2501 Relays & Solenoids Page 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . . High Frequency Relays . . . . . . . . . . . . . . . . . . . . . Interface Relays . . . . . . . . . . . . . . . . . . . . . . . . . . .

irfp244a

Abstract: L014A
Contextual Info: IRFP244A Advanced Power MOSFET FEATURES BVdss = 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 MA Max @ VDS= 250V

VQA 13

Abstract: IRF634A
Contextual Info: ERF634A Advanced Power MOSFET FEATURES b vdss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 m A Max. @ VDS= 250V ■ - 250 V

Contextual Info: ERFS644A Advanced Power MOSFET FEATURES BVdss = 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 MA Max. @ VM = 250V

DD313

Abstract: IRFS614A
Contextual Info: IRFS614A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ sv DSS = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 M A{M ax. @ VDS = 250V

Contextual Info: IRF654A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 p A Max. @ VDS = 250V B V dss = 250 V

Contextual Info: SFW/I9614 Advanced Power MOSFET FEATURES BVdss = -250 V • ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10nA Max. @ VDS= -250V

a2724

Contextual Info: Advanced Power MOSFET S F W /I9 6 3 4 FEATURES B V dss = - 2 5 0 V • Avalanche Rugged Technology ^DS on = ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA (Max.) @ VOS = -250V

irfs654a

Abstract: VM-50V
Contextual Info: IRFS654A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA Max. @ VOS= 250V

RC435

Contextual Info: SFW/I9624 Advanced Power MOSFET FEATURES BV dss = -250 V • ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ■ ■ ■ ■ Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA Max. @ VOS = -250V

Contextual Info: SFH9244 A d v a n c e d Power MOSFET FEATURES • ■ ■ ■ ■ ■ B V dss = -2 5 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10nA Max. @ VDS= -250V

Contextual Info: IRFR/U2 1 4 A Advanced Power MOSFET FEATURES BV0SS = 250 V • ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gale Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area m Lower Leakage Current : 10 nA Max. @ VD8= 250V

dts25

Abstract: l79A FS5F IRFS644a
Contextual Info: IRFS644A Advanced Power MOSFET FEATURES BV,OSS = 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 jaA M ax. @ ■ ^DS(on) " 0 28

diode t96

Contextual Info: SFS9614 Advanced Power MOSFET FEATURES BV,DSS = -250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on “ 4.0 Q ■ Lower Input Capacitance In = -1.27 A ■ Improved Gate Charge ■ ■ Extended Safe Operating Area Lower Leakage Current : 10nA(Max.) @ Vds = -250V

p-channel 250V 16A power mosfet

Contextual Info: SFP9614 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ B V dss = -250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10pA Max. @ VOS= -250V

Contextual Info: IR F W /K 1 4 A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ B V dss = 2 5 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 u A Max. @ VM = 250V

Contextual Info: IRFR/U214A A d van ced Power MOSFET FEATURES BVdss = 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current ; 10 Li A Max. @ VOS = 250V