DIODE 22B4
Abstract: 22b4
Contextual Info: Optointerrupter Specifications H22B4, H22B5, H22B6 Optointerrupter G a A s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier Module with 1mm Aperture T h e H22B In terru p ter M odule is a gallium arsen id e in frared em itting diode co u p led to a silicon D arlington-connected
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h22b4h22b5h22b6diode 22b4+122b4
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H0A1404
Abstract: HOA1404
Contextual Info: H0A1404 Reflective Sensor DESCRIPTION The HOA1404 series consists of an infrared emitting diode and an NPN silicon phototransistor HOA1404-001 ,-002 or photodarlington (HOA1404-003), encased side-by-side on converging optical axes, in a black thermoplastic housing. The
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h0a1404hoa1404hoa1404-001hoa1404-003+5se1450sd1440sd1410ss1a3022b4b
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22B27
Abstract: BZY95-C39 BZY95C18 BZY96-C6V8 BZY96 BZY95C10 BZY96C5V1 IN1765 BZY95-C10 BZY96-C5V1
Contextual Info: SEMITRON INDUSTRIES LT» 43E D • & 137 &&^ BZY9S/BZY96/Z2 OOOOISI O B S L C B SERIES Hermetically Sealed Metal Package ■Voltage Regulator Diode Released to BS/CECC 9305-F082 ■Voltage Range 3.0 to 400 Volts 1.5 Watt Steady State ■400 Watt Peak Power
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bzy9s/bzy96/z29305-f0829305-f-082z2b130+13z2b150z2b200z2b40022b27bzy95-c39bzy95c18bzy96-c6v8bzy96bzy95c10bzy96c5v1in1765bzy95-c10bzy96-c5v1
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BZY95C12
Abstract: in152 BZY95-C12 BZY95-C51 BZY95C22 BZY96C5V1 BZY96C6V2 BZY96-C6V8 BZY95-C24 BZY95C24
Contextual Info: SEMITRON INDUSTRIES LT» 43E D • &137 &&^ OOOOISI O B S L C B BZY9S/BZY96/Z2 SERIES Hermetically Sealed Metal Package ■Voltage Regulator Diode Released to BS/CECC 9305-F082 ■Voltage Range 3.0 to 400 Volts 1.5 Watt Steady State ■400 Watt Peak Power
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bzy9s/bzy96/z29305-f0829305-f-082do-35+13do-41do-15do-201adbzy95c12in152bzy95-c12bzy95-c51bzy95c22bzy96c5v1bzy96c6v2bzy96-c6v8bzy95-c24bzy95c24
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db3 c918
Abstract: TRANSISTOR 6b8 SMD Q88 apple ZENER Diode 12B2 2c213 diode zener 12a2 diode DB3 C531 bubba oscillator schematic smd transistor 6a1 U52 A4 apple
Contextual Info: 8 6 7 PAGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 C B 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. D 2 3 4 5 REV 10/15/2004 CONTENTS
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mpc7450200pin1000btsn74auc1g04+14sn74auc1g08adt7460kxm52fan2558db3 c918transistor 6b8 smdq88 applezener diode 12b22c213diode zener 12a2diode db3 c531bubba oscillator schematicsmd transistor 6a1u52 a4 apple
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sil1162
Abstract: Diode 31d8 06 31d8 diode C828 3-pin transistor 2N7002DW 3 PIN hall effect sensor u58 hall effect sensor u58 zener 12a2 powerbook bubba oscillator schematic
Contextual Info: 8 6 7 2 3 4 5 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN PAGE B TITLE PAGE AND CONTENTS SYSTEM BLOCK DIAGRAM POWER BLOCK DIAGRAM
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mpc7450200pinrpak10p2c1000bt+11sn74auc1g04sil1162diode 31d8 0631d8 diodec828 3-pin transistor2n7002dw3 pin hall effect sensor u58hall effect sensor u58zener 12a2powerbookbubba oscillator schematic
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Diode 31d8 06
Abstract: r2561 11A3 bubba oscillator schematic 31d8 diode 2N7002DW zener DB3 C209 bubba oscillator 88E1111 config MBR0520LT
Contextual Info: 8 6 7 2 3 4 5 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN PAGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 C B CONTENTS
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mpc7450200pindiode 31d8 06r2561+811a3bubba oscillator schematic31d8 diode2n7002dwzener db3 c209bubba oscillator88e1111 configmbr0520lt
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22B4 diode ZENER
Abstract: smk 1350 transistor 88E1111 BCC package SIL1162 LS650 C3333 P33A zener DIODE 5c2 39C6 2N7002DW
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD DRAWING 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN DATE 02 D PAGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
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mpc7447a400pinlmc7211nc7s32+15max4172tps2211fan2558max1772max171722b4 diode zenersmk 1350 transistor88e1111 bcc packagesil1162ls650c3333p33azener diode 5c239c62n7002dw
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31d8 diode
Abstract: r2561 741G32 zener 12a2 27b4 R3381 zener 12B2 2N7002DW MAX4172 TH 2267 charger circuit diagram
Contextual Info: 8 6 7 2 3 4 5 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN C B TITLE PAGE AND CONTENTS SYSTEM BLOCK DIAGRAM POWER BLOCK DIAGRAM PCB NOTES AND HOLES
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mpc7450200pin31d8 dioder2561+8741g32zener 12a227b4r3381zener 12b22n7002dwmax4172th 2267 charger circuit diagram
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LTS25-NP
Abstract: AN899 - Brushless DC Motor Control Using PIC18FXX31 MCUs gbpc2506c qei pIC 4431 pwm bodine AN899 MAX232-DIP16 LOC111-8DIP loc111 motor 22B4BEBL
Contextual Info: AN899 Brushless DC Motor Control Using PIC18FXX31 MCUs Author: Padmaraja Yedamale Microchip Technology Inc. INTRODUCTION The PIC18F2331/2431/4331/4431 family of microcontrollers have peripherals that are suitable for motor control applications. These peripherals and some of
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an899pic18fxx31pic18f2331/2431/4331/4431dk-2750+11d-85737nl-5152lts25-npan899 - brushless dc motor control using pic18fxx31 mcusgbpc2506cqei pic 4431pwm bodinemax232-dip16loc111-8diploc111 motor22b4bebl
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L6703
Abstract: ISL9504 ntc 10d-7 55D8 55B3 sot23-5 32 pin Mini-DVI to VGA connector PP3V42G3H 31d6 D7950 J5550
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. K36 MLB SCHEMATIC REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?
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itp700flexl6703isl9504ntc 10d-7+755d855b3 sot23-532 pin mini-dvi to vga connectorpp3v42g3h31d6d7950j5550
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20b1 diode
Abstract: TP5056 samsung R530 2.0b1 diode TP-103-03 TP10592 smd diode ab11 b34 TP10387 sock 30p-2r-smd diode 107 10K 521
Contextual Info: 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다. This Document can not be used without Samsung's authorization. 9. 회로도 9-1. External Graphic 9 - 1 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL
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bridge/ide/ac97/smbusconn-12p-fpc100nf20b1 diode+9tp5056samsung r5302.0b1 diodetp-103-03tp10592smd diode ab11 b34tp10387sock 30p-2r-smddiode 107 10k 521
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samsung R530
Abstract: TP5056 smd diode ae C535 30C4 20b1 diode smd diode ab11 b34 U-503 B5-17 R-5670 Socket AM2
Contextual Info: 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다. This Document can not be used without Samsung's authorization. 9. 회로도 9-1. External Graphic www.kythuatvitinh.com 9 - 1 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL
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bridge/ide/ac97/smbusconn-12p-fpc100nfsamsung r530+9tp5056smd diode ae c53530c420b1 diodesmd diode ab11 b34u-503b5-17r-5670socket am2
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thyristor TAG 8506
Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y
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11pm104thyristor tag 8506nais inverter vf 7f operation manual922aa1y-a4p+7optek a400 817sprague 513dsprague 926csprague 195prapa relay 12vdctriac tag 8948mascot 719
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diode 39b2
Abstract: R5C485 39B2 39B4 DIODE 22B4 39B3 diode 3.9B2 39B-3 smd code JTP1138
Contextual Info: SENS V20 Series Owner : Kevin, Lee Signature : H.J. KIM W.S. Jung APPROVAL MP 1.0 Aug, 15, 2002 DRACO MAIN BOARD CHECK : : : : : : DRAW Model Name PBA Name PCB Code Dev. Step Revision T.R. Date CPU : Pentium-IV Chip Set : Brookdale-GL / ICH4 DRACO X POWER LED / KBD / PS2 / TOUCHPAD
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ch7017draco-16draco-23draco-18+12draco-38draco-27diode 39b2r5c48539b239b4diode 22b439b3 diode3.9b239b-3smd codejtp1138
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oz960
Abstract: 16b3 zener diode Zener 13B3 zener diode 7A3 SN0210 6R-P10 16B1 zener diode Zener Diode 13B3 q59 apple C5763
Contextual Info: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN TABLE OF CONTENTS B A COVER PAGE BLOCK DIAGRAM, SYSTEM, POWER & PCB INFO
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mpc7450oz96016b3 zener diodezener 13b3+7zener diode 7a3sn02106r-p1016b1 zener diodezener diode 13b3q59 applec5763
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OZ960
Abstract: 22B4 diode ZENER c5763 C1904 7A3 zener diode UL796 258C5 58A5 zener diode 7A3 9A2 zener diode
Contextual Info: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN C B A DESCRIPTION OF CHANGE 279015 ENGINEERING RELEASED
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mpc7450oz96022b4 diode zenerc5763+7c19047a3 zener diodeul796258c558a5zener diode 7a39a2 zener diode
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20C8
Abstract: 20B3 diode 22B2 DIODE DIODE 22B4 RB342 diode 62b3 22A5 61a3 55A7 20D2
Contextual Info: DS33Z44DK Ethernet Transport Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES Demonstrates Key Functions of DS33Z44 Ethernet Transport Chipset Includes Two Resource Cards: One with DS21458 T1/E1 SCT and one with DS3174 T3/E3 SCT, Transformers, BNC and RJ48
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ds33z44dkds33z44ds21458ds3174+14mmc2107gnd105gnd117cr-6320c820b3 diode22b2 diodediode 22b4rb342diode 62b322a561a355a720d2
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OZ960
Abstract: zener diode 7A3 inverter 16b2 zener diode zener 15B2 diode 21D8 10 C4237 54b6 diode 21D8 zener 9A2 11b3 DIODE ZENER
Contextual Info: CR-1 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. PAGE D C 4,5 6,7 8 9 MPC7450 MAXBUS CPU SPEED & CONFIG OPTIONS BOOTBANGER CPU LA CONNECTORS, ESP, CPU BYPASS
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mpc7450oz960zener diode 7a3inverter 16b2 zener diode+7zener 15b2diode 21d8 10c423754b6diode 21d8zener 9a211b3 diode zener
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BA41-00808A
Abstract: BA41-00807A samsung schematic ICS95461 TP2136 tp2116 hainan3 HU-1M2012-121JT BA41-00809A 2u42
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents HAINAN3_INT C CPU : Chip Set :
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rs600msb600ba41-00807aba41-00808a+12rs600tp2656rev500tp2660samsung schematicics95461tp2136tp2116hainan3hu-1m2012-121jtba41-00809a2u42
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SOT23-5 AE31
Abstract: c9450 ar9350 ZH510 M5621 C4722 FERR-120-OHM-1 6A4 mic DIODE D6905 C8450
Contextual Info: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 49 MS MS MS PS PS PS PS PS PS PS PS
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sot23-5 ae31c9450ar9350zh510+6m5621c4722ferr-120-ohm-16a4 mic dioded6905c8450
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BA41-00809A
Abstract: HAINAN3_EXT BA41 HAINAN3 BA41-00810A 218s6ecla21fg RS600ME smd diode code ak12 SI2315BDS-T1 B502 samsung p28
Contextual Info: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents HAINAN3_EXT C 1. COVER 2-7. DIAGRAM & ANNOTATION
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rs600sb600ba41-00809aba41-00810a+13tp2123tp2124tp2125tp2062tp2063hainan3_ext ba41hainan3218s6ecla21fgrs600mesmd diode code ak12si2315bds-t1b502samsung p28
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ZH510
Abstract: XW604 L9120 M5607 L9140 C4722 L9300 PP9010 ZH610 74LVC1G04DBVG4
Contextual Info: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 49 MS MS MS PS PS PS PS PS PS PS PS
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zh510xw604l9120m5607+6l9140c4722l9300pp9010zh61074lvc1g04dbvg4
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Q8303
Abstract: JD smd diodes C4722 C5807 C8450 p66 apple XTAL 25mhz 50ppm SMC H8S2116 U6700 Socket AM2
Contextual Info: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 49 MS MS MS PS PS PS PS PS PS PS PS
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q8303jd smd diodesc4722c5807+6c8450p66 applextal 25mhz 50ppmsmc h8s2116u6700socket am2
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