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    DIODE 224 Search Results

    DIODE 224 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Datasheet
    CUZ24V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Datasheet
    CUZ16V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Datasheet

    DIODE 224 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: RClamp0508M RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS - RailClamp Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The RClamp series has been specifically designed to protect sensitive


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    do000 PDF

    Contextual Info: RClamp7002M RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS - RailClamp Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The RClamp series has been specifically designed to protect sensitive


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    RClampTM7002M MSOP-10L PDF

    land pattern for msOP 10

    Abstract: marking code bbb MO-187 MSOP-10L POWER SUPPLY BOARD 20 94V0 MSOP10L
    Contextual Info: RClamp7002M RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS - RailClamp Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The RClamp series has been specifically designed to protect sensitive


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    RClamp7002M RClampTM7002M MSOP-10L 7002M land pattern for msOP 10 marking code bbb MO-187 POWER SUPPLY BOARD 20 94V0 MSOP10L PDF

    APT30DL60B

    Contextual Info: APT30DL60B G APT30DL60S(G) 600V 30A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode (B) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)


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    APT30DL60B APT30DL60S O-247 Cathode30) PDF

    A 3120 opto

    Abstract: MIE-384A4
    Contextual Info: AlGaAs/GaAs T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-384A4 Package Dimensions The MIE-384A4 is an infrared emitting diode utilizing Unit : mm inches GaAs with AlGaAs window coating chip technology. 4.6±0.30 (.181) It is molded in water clear plastic package.


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    MIE-384A4 MIE-384A4 40MIN. 00MIN. A 3120 opto PDF

    1480 nm laser diode high power

    Contextual Info: O K I electronic components OL403N-100 1.48 jam High-Power Laser Diode GENERAL DESCRIPTION The OL403N-100 is a 1.48 |xm, InGaAsP/InP high-power laser diode which can be a light source for fiber-optic communication systems and optical instruments. FEATURES


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    OL403N-100 OL403N-100 b724240 00E2435 2424D G02243b L724240 DD22437 1480 nm laser diode high power PDF

    Contextual Info: STD/SDT200 Thyristor-Diode Modules, Diode-Thyristor Modules Dimensions in mm 1mm=0.0394" Type VRSM VDSM V STD/SDT200GK08 900 STD/SDT200GK12 1300 STD/SDT200GK14 1500 STD/SDT200GK16 1700 STD/SDT200GK18 1900 Symbol Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine


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    STD/SDT200 STD/SDT200GK08 STD/SDT200GK12 STD/SDT200GK14 STD/SDT200GK16 STD/SDT200GK18 180oC 120oC PDF

    Contextual Info: RClamp7002M RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS - RailClamp® Description Features RailClamp® TVS diode arrays are specifically designed to protect sensitive components which are connected to high-speed data and transmission lines from overvoltage caused by ESD electrostatic discharge , CDE


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    RClamp7002M 7002M MSOP-10L PDF

    LF400

    Abstract: R-1525 OL561N-25 OL564N-25
    Contextual Info: O K I electronic components OL561N-25, OL564N-25 1.55 |im High-Power Laser-Diode DIP Module GENERAL DESCRIPTION The OL561N-25 and OL564N-25 are 1.55 Jim, extremely high power laser-diode DIP modules with single-mode fiber pigtails. The Multi-Quantum Well MQW structure laser diodes achieve a single­


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    OL561N-25, OL564N-25 OL561N-25 OL564N-25 14-pin OL561N-25) b7E4240S OL561N-25 2424D LF400 R-1525 PDF

    HL6525MG

    Contextual Info: HL6525MG Visible High Power Laser Diode for Recordable-DVD ODE-208-1602G Z Rev.7 Mar. 2005 Description The HL6525MG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories, such as Recordable-DVD, and


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    HL6525MG ODE-208-1602G HL6525MG 100ns, HL6525MG: PDF

    F15SC6

    Abstract: diode code yw SF15SC6
    Contextual Info: 2/avh+KU7 S W -I* Schottky Barrier Diode y j y a Twin Diode SF15SC6 OUTLINE D IM E N SIO N S 60 V 15A Date code nafe_ $[0181 Type No. M _ • T jl5 0 ° C F15SC6 Polarity ffiiE I7 4.5 ±a 2.7±0- 10±0-2 <¿3.2-01 •P rrsm Unit • mm Package I FTO-220


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    SF15SC6 FTO-220 F15SC6 J515-5 diode code yw SF15SC6 PDF

    Contextual Info: MDD 200 IFRSM = 2x 350 A IFAVM = 2x 224 A VRRM = 1400-2200 V High Power Diode Modules VRSM V 1500 1700 1900 2300 VRRM V 1400 1600 1800 2200 3 Type 1 3 2 1 2 MDD 200-14N1 MDD 200-16N1 MDD 200-18N1 MDD 200-22N1 E72873 Symbol Conditions IFRMS IFAVM TVJ = TVJM


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    200-14N1 200-16N1 200-18N1 200-22N1 E72873 9700ree 20080128a PDF

    RFU10

    Contextual Info: Super Fast Recovery Diode RFU10TF6S Series Ultra Fast Recovery Dimentions Unit : mm Structure Applications General rectification (1) (3) Features 1)Single type.(TO-220) 2)Ultra High switching speed Construction Silicon epitaxial plnner (1)


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    RFU10TF6S O-220) R1010A RFU10 PDF

    Contextual Info: VBUS05A1-SD0 www.vishay.com Vishay Semiconductors Low Capacitance Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in Silicon Package FEATURES • Ultra compact CLP0603 package • Low package height < 0.3 mm 0.27 • 1-line ESD-protection


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    VBUS05A1-SD0 CLP0603 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    MOC263

    Contextual Info: MOTOROLA O rder this docum ent by MOC263/D SEMICONDUCTOR TECHNICAL DATA MOC263 Small Outline Optoisolators [CTR = 500% Min] Darlington Output No Base Connection Motorola Preferred Device These devices consist of a gallium arsenide infrared emitting diode optically


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    MOC263/D RS481A S5036. 2PHX34506P-O MOC263 PDF

    1ZC5.6

    Abstract: 1zc33
    Contextual Info: SILICON DIFFUSED TYPE ZENER DIODE 1ZC121ZC120 CONSTANT VOLTAGE REGULATION. TELEPHONE, PRINTER USES • Average Power Dissipation : P=1,0W • Zener Voltage : Vz=12~120V • Tolerance of Zener Voltage Vz : +10% • Plastic Mold Package MAXIMUM RATINGS CHARACTERISTIC


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    1ZC121ZC120 1ZC120) 1ZC12 1ZC120 1ZC13 1ZC15 1ZC16 1ZC18 1ZC20 1ZC5.6 1zc33 PDF

    Contextual Info: Advance Technical Information TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 IXTZ550N055T2 = = RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 55V 550A Ω 1.0mΩ DE475 D D D Symbol Test Conditions Maximum Ratings


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    IXTZ550N055T2 DE475 TZ550N055T2 PDF

    HC4-H-DC24V

    Abstract: HC2K-DC48V-F HC2K-DC24V-F dc 6v to dc12v circuit diagram digital relay 12v 3a datasheet HC2-H-DC24V-F HC4-DC24V HC1-H-AC12V-F HC1-H-AC24V-F HC1-HP-DC24V
    Contextual Info: HC Standard type Amber sealed type Keep Latching relay With diode type FROM SEQUENCE TO POWER CIRCUITS COMPATIBLE WORLDWIDE HC RELAY PRODUCT TYPES FEATURES TYPICAL APPLICATIONS 1. Long track record means reliable quality. 2. Can provide switching across the


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    081008D HC4-H-DC24V HC2K-DC48V-F HC2K-DC24V-F dc 6v to dc12v circuit diagram digital relay 12v 3a datasheet HC2-H-DC24V-F HC4-DC24V HC1-H-AC12V-F HC1-H-AC24V-F HC1-HP-DC24V PDF

    Contextual Info: HC FROM SEQUENCE TO POWER CIRCUITS COMPATIBLE WORLDWIDE Standard type Amber sealed type Keep Latching relay With diode type HC RELAY PRODUCT TYPES FEATURES TYPICAL APPLICATIONS 1. Long track record means reliable quality. 2. Can provide switching across the


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    auto12 081008D PDF

    W14NM50FD

    Abstract: TO-220 footprint p12nm50 p12nm50fdfp STB12NM50FD STB12NM50FD-1 STB12NM50FDT4 STP12NM50FD STP12NM50FDFP STW14NM50FD
    Contextual Info: STP12NM50FD-STP12NM50FDFP-STW14NM50FD STB12NM50FD - STB12NM50FD-1 FDmesh Power MOSFET with FAST DIODE • ■ ■ ■ ■ ■ TYPE VDSS RDS(on) STP12NM50FD STP12NM50FDFP STB12NM50FD STB12NM50FD-1 STW14NM50FD


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    STP12NM50FD-STP12NM50FDFP-STW14NM50FD STB12NM50FD STB12NM50FD-1 N-CHANNEL500V-0 32-12ATO-220/FP/D2PAK/I2PAK/TO-247 STP12NM50FD STP12NM50FDFP STB12NM50FD STW14NM50FD W14NM50FD TO-220 footprint p12nm50 p12nm50fdfp STB12NM50FD-1 STB12NM50FDT4 STP12NM50FD STP12NM50FDFP STW14NM50FD PDF

    Contextual Info: VCUT05D1-SD0 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in Silicon Package FEATURES • Ultra compact CLP0603 package • Low package height < 0.3 mm 0.27 • 1-line ESD-protection • Working range ± 5.5 V


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    VCUT05D1-SD0 CLP0603 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SD275SE30A/B/C SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4142, Rev A SILICON SCHOTTKY RECTIFIER DIE Ultra Low Forward Voltage Drop Typical Voltage Drop 0.30V Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode


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    SD275SE30A/B/C PDF

    IRS2608DSPBF

    Abstract: 3 phase inverter circuit IRS23364D JESD22-A114 JESD78
    Contextual Info: IRS2608DSPbF Aug 18, 2009 IRS2608DSPbF HALF-BRIDGE DRIVER Features • • • • • • • • • • • • • • • • Floating channel designed for bootstrap operation Integrated bootstrap diode suitable for Complimentary PWM switching schemes only


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    IRS2608DSPbF IRS2608DSPBF 3 phase inverter circuit IRS23364D JESD22-A114 JESD78 PDF

    Contextual Info: MIC284 Micrel MIC284 Two-Zone Thermal Supervisor REV. 11/04 General Description Features The MIC284 is a versatile digital thermal supervisor capable of measuring temperature using its own internal sensor and an inexpensive external sensor or embedded silicon diode such


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    MIC284 MIC284 PDF