DIODE 20NA Search Results

Contextual Info: Ordering number : ENA0605A SVC710 Varactor Diode http://onsemi.com Single Varactor Diode for VCO 15V, 20nA, CR=4.8, rs=1.6Ω, MCPH3 Features • • • High capacitance ratio Low voltage drive Small-sized package : MCPH Specifications Absolute Maximum Ratings at Ta=25°C

dab radio circuit

Abstract: construction of varactor diode dab radio varactor diode capacitance measurement Dual Varactor Diode with Common Cathode FSD271TA varactor diode pcb design varactor diode notes varactor diode q factor measurement top marking c2 sot23
Contextual Info: ZDC834A SILICON DUAL VARIABLE CAPACITANCE DIODE SUMMARY VBR=25V; IR=20nA; Cd=47pF Nom DESCRIPTION The ZDC834A is a new hyperabrupt SOT23 packaged dual common cathode varactor diode , offering users both compact circuit design and impressive performance comprising tightly controlled CV characteristics, a capacitance

Dual Varactor Diode with Common Cathode

Abstract: construction of varactor diode dab radio circuit FSD270 FSD270TA dab radio Zetex AN9
Contextual Info: FSD270 SILICON DUAL VARIABLE CAPACITANCE DIODE SUMMARY VBR=25V; IR=20nA; Cd=33pF Nom DESCRIPTION The FSD270 is a new hyperabrupt SOT23 packaged dual common cathode varactor diode , offering users both compact circuit design and impressive performance comprising tightly controlled CV characteristics, a capacitance of typically 33 pf @

KDV365F

Contextual Info: SEMICONDUCTOR KDV365F TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. FEATURES CATHODE MARK Good C-V Linearity. Low Series Resistance. C 1 D 2 Small Package : TFSC. B A MAXIMUM RATING Ta=25 CHARACTERISTIC RATING

SEM 2004

Contextual Info: SEM ICONDUCTOR KDV365F TE CHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. FEATURES C ATHODE MARK • Good C-V Linearity. E • Low Series Resistance. • Small Package : TFSC. DIM MAXIMUM RATING Ta=25°C SYMBOL

germanium

Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Contextual Info: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014

Contextual Info: 05165 ET720 Only One Name Means ProTek’Tion ultra low capacitance steering diode array Description The ET720 is a low capacitance and low leakage steering diode array capable of protecting up to 14 high speed data lines. Its ultra low capacitance allows maintenance of signal integrity for high-speed data lines while protecting the

et720

Contextual Info: 05165 ET720 Only One Name Means ProTek’Tion ultra low capacitance steering diode array Description The ET720 is a low capacitance and low leakage steering diode array capable of protecting up to 14 high speed data lines. Its ultra low capacitance allows maintenance of signal integrity for high-speed data lines while protecting the

Contextual Info: TLP591B GaAÄ As IRED a PHOTO-DIODE ARRAY TENTATIVE DA T A TELECOMMUNICATION PROGRAMMABLE CONTROLLERS MOS GATE DRIVER MOS FET GATE DRIVER The T O S H I B A TLP591B consists of an a l u m i n u m galium ar s e n i d e infrared emitting diode o p t i c a l l y coupled to

Contextual Info: Micropower Voltage Reference Diode « llrtrfir v u IW IV CORPORATION \J CLM185-2.5/CLM285-2.5/CLM385-2.5 FEATURES ORDERING INFORMATION • Operating C urrent. 20mA - 20mA • Dynamic Impedance. 1fi

Contextual Info: HSR101-Silicon Schottky Barrier Diode for Various Detector, High Speed Switching Features Outline • Low forward voltage, High efficiency. • Low reverse current. • Sm all Resin package SRP is suitable for surface mount design.

H0A1876

Contextual Info: H0A1876 Transmissive Sensor DESCRIPTION The HOA1876 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA1876-001, -002 or photodarlington (HOA1876-003) encased in a white thermoplastic housing. Detector switching takes place whenever an

SO16 weight

Abstract: ET720
Contextual Info: 05165 ET720 . . . engineered solutions for the transient environment ULTRA LOW CAPACITANCE STEERING DIODE ARRAY APPLICATIONS ✔ Ethernet - 10/100/1000 Base T ✔ Cellular Phones ✔ Handheld Electronics ✔ FireWire ✔ USB Interface IEC COMPATIBILITY EN61000-4

SO16 weight

Abstract: ET720
Contextual Info: 05165 ET720 . . . engineered solutions for the transient environment ULTRA LOW CAPACITANCE STEERING DIODE ARRAY APPLICATIONS ✔ Ethernet - 10/100/1000 Base T ✔ Cellular Phones ✔ Handheld Electronics ✔ FireWire ✔ USB Interface IEC COMPATIBILITY EN61000-4

CLM185T2

Abstract: CLM285T2 CLM285Y2 CLM385N2 CLM385T2 CLM385Y2 120PV
Contextual Info: Micropower Voltage Reference Diode C Q IO Q IC CO RPO RATIO N v CLM185-2.5 / CLM285-2.5/ CLM385-2.5 FEATURES ORDERING INFORMATION • Operating C u rre n t. 20 |M - 20mA • Dynamic Im p ed an ce . 1Q

Infineon technology roadmap

Abstract: ESD5V3S1U-02LS Mini DisplayPort connector ESD5V3S1B-02LRH ESD5V3S1U-02LRH ESD5V3U1U-02LS ESD8V0L1B-02LRH ESD8V0L2B-03L ESD8V0R1B-02LRH ESD8V0R1B-02LS
Contextual Info: Since the introduction of the world’s smallest TVS diode Typical applications protected by INFINEON TVS dio- back in 2007, INFINEON has greatly enlarged its portfolio des include see also Table 1 : of small and thin TVS diodes. Today INFINEON continues

Contextual Info: HVU362-Variable Capacitance Diode for VCXO Features Outline • High capacitance ratio. n=3.0min • Good C-V linearity. • Ultra small Resin Package (URP) is suitable for surface mount design. Cathode mark 1 Mark ^ - J Ordering Information Type No.

Contextual Info: HVU359 Variable Capacitance Diode for VCXO HITACHI Features • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small Resin Package URP is suitable for surface mount design. Ordering Information Type No. Laser Mark

Hitachi DSA001653

Contextual Info: HSR101 Silicon Schottky Barrier Diode for Various detector, High speed switching ADE-208-080D Z Rev. 4 Sept. 1, 1998 Features • Low forward voltage, High efficiency. • Low reverse current . • Small Resin Package (SRP) is suitable for surface mount design.

Contextual Info: HVD362 Variable Capacitance Diode for VCO REJ03G0056-0200 Rev.2.00 Jan 24, 2006 Features • High capacitance ratio. n = 3.0 min • Good C-V linearity. • Super small Flat Lead Package (SFP) is suitable for surface mount design. Ordering Information Type No.

Contextual Info: HVD362 Variable Capacitance Diode for VCO REJ03G0056-0200 Rev.2.00 Jan 24, 2006 Features • High capacitance ratio. n = 3.0 min • Good C-V linearity. • Super small Flat Lead Package (SFP) is suitable for surface mount design. Ordering Information Type No.

Hitachi DSA002789

Contextual Info: HVC365 Variable Capacitance Diode for VCXO ADE-208-428A Z Rev. 1 Features • High capacitance ratio and good C-V linearity. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code HVC365

Mark V6

Abstract: mark h2 diode
Contextual Info: HVU365-Variable Capacitance Diode for VCXO Features Outline • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small Resin ¿Package URP is suitable for surface mount design. Cathode mark Mark — H2 Ordering Information

Hitachi DSA001652

Contextual Info: HVU362 Variable Capacitance Diode for VCXO ADE-208-348A Z Rev. 1 Features • High capacitance ratio. (n = 3.0min) • Good C-V linearity. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. Laser Mark