DIODE 1FM Search Results

24CH4FM

Abstract: DIODE 1FM 24ch
Contextual Info: NEC 24A FAST RECOVERY DIODE MODULE ELECTRON DEVICE Ä _ 24C H 1FM —24C H 4FM 24CH 1FM — 24CH 4FM are isolated ty p e fast recovery OUTLINE DRAWING Unit: mm diode centertap m odule o f w hich o u tp u t current is 24A. FEATURES • Fast recovery tim e.

12CH4FM

Abstract: 12CH2FM
Contextual Info: NEC 12A FAST RECOVERY DIODE MODULE ElfCTRON DEVICE 1 2CH1 FM — 12CH 4FM 12C H 1FM ~ 12CH4FM are isolated type fast recovery OUTLINE DRAWING UNIT: mm diode centertap module o f w hich o u tp u t current is 12A. FEATURES Fast recovery tim e. High re lia b ility (Glass passivation).

8F sot23

Contextual Info: BAT240. High Voltage Schottky Diode • Rectifier Schottky diode for telecommunication and industrial applications • High reverse voltage: 240 V • For power supply applications • For clamping and protection in high voltage applications • Pb-free RoHS compliant package 1)

Contextual Info: mMEREX CM421290 CM421690 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SCR/Diode POW-R-BLOK Modules 90 Amperes/1200-1600 Volts Description: Powerex SCR/Diode POW-R-BLOK™ Modules are designed for use in applications

IC lf 412

Abstract: 240-602
Contextual Info: CD240602 CD241202 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 FdSt R & C O V G K y Dual Diode Modules 20 Amperes/600-1200 Volts Description: Powerex Fast Recovery Dual Diode Modules are designed for use in applications requiring fast

20CS04FM

Contextual Info: SEC 20A SHOTTKY BARRIER DIODE MODULE aHn N "m 20CS04FM OUTLINE DRAWING UNIT: mm 20CS04FM is a isolated type shottkey barrier diode centertap module o f w hich o u tp u t current is 20A. FEATURES * Low forw ard voltage drop. * Very fast recovery tim e. Isolated type.

HTI 2E

Abstract: R101
Contextual Info: 1F60A-120F/R FAST RECOVERY DIODE MODULE • ¡ N f ë ^ Features • 'h M • |£ M • iÜWf± Small and Lightweight High Voltage • #MfefâcM Non-insulated Type ■ ffliÊ > Applications • ^< 7 -l'7 Snuber Diode ’ M axim um Ratings and Characteristics

Contextual Info: ERG28-12, ERG78-12 4 * - IW B '+ '/i : Outline Drawings K Fast Recovery Diode : Features • V f >7 • W /E Glass Passivation Chip High V oltage • * $ " j KJI2 Stud Mounted ' Applications • / '0r7- I* Snuber Diode • Æ fê : M axim um Ratings and Characteristics

LA167

Abstract: LA-63 LA-68 LA60
Contextual Info: LASER DIODE INC 1SE D | S305TÛS D0GGM75 fi | LA-60 SERIES LA-160 SERIES LASER DIODE, INC._ 850nm PULSED GaAIAs LASER DIODES T - f l- e e FEATURES > Wavelength Selection Available from 780 to 880 nm P High Efficiency at Low Drive Currents P Up to 90 Watts Peak Power Output

30S3

Abstract: R101 T151
Contextual Info: 1F60A-120F/R FAST RECOVERY DIODE MODULE • ¡N fë ^ Features • 'h M • |£ M • iÜ W f± Small and Lightw eight High V oltag e • #MfefâcM N on-insulated Type ■ ffliÊ > Applications • ^<7 - l ' 7 Snuber Diode ’ Maximum Ratings and Characteristics

LA-167

Abstract: laser diode 780 nm cd dual beam laser circuit laser diode pulsed LA-160 LA-162 LA-163 LA167 LA-60 LA-63
Contextual Info: LASER DIODE INC 15E D | S3BS^flS 00D0M75 A | LA-60 SERIES LA-160 SERIES LASER DIODE, INC. T -H -i'O C 850nm PULSED GaAIAs LASER DIODES FEATURES P W avelength Selection Available from 780 to 880 nm P High Efficiency a t Low Drive Currents t> Up to 90 Watts Peak Power O utput

Contextual Info: s / 3 '. v h + - a " u y y - Schottky Barrier Diode Single Diode Surface Mount OUTLINE DIMENSIONS Unit • mm Package I 1F D 1 F M 3 CD- 30V 5A V>U$-'jy?/\°yR£>#%/ &-y Standard soldering pad Cathode m ark^v >/J'§kSM D >Tjl50°C Ufi V f = 0.46 V > f f i l R = 0.1mA

smd marking YF

Abstract: Diode marking m7 marking code YF diode smd m7 TU-101 TC-10 R3T marking diode smd marking code catalog max6532 D1FM3
Contextual Info: Schottky Barrier Diode Single Diode mtmm o u t lin e Package I 1F D1FM3 30V 5A 'C athode mark Feature r | l eS e -n • Small S M D • V f=0.46V • <5lR=0.1mA Unit I mm Weight 0.058k T yp m (M G> - H «g) • Low V f =0 .4 6 V • Low lR -0.1m A T yp e No.

D1FM3

Contextual Info: Schottky Barrier Diode Single Diode mtmm D1FM3 o u tlin e 30V 5A Feature 1Small SMD 1Tj=150°C ' Low Vf=0.46V 1Low lR=0.1mA » /jv g y s M D >Tj=150°C • V f=0.46V •filR=0.1mA Main Use • K y j J — jS JÜKilt • DC/DC •m m m îïJ K y z iy • Reverse connect protection for

smd diode marking code TO3

Abstract: SMD diode KL DIODE smd marking code UM 31 UI04 smd diode schottky code marking SR k9 diode DIODE CODE VU smd marking 7G marking code 7G smd marking HB diode
Contextual Info: Schottky Barrier Diode mtmm o u t l i n e Single Diode M1FM3 U n it! mm Package : M1F W eight 0.027g Typ 30V 3A & y —K v —? Cathode mark Feature | • /J\*ÏÏSMD • S m all S M D • V f= 0.46V • L o w V f =0 .4 6 V H S lR = 0 .05m A • L o w lR -0 .0 5 m A

Contextual Info: î / a v b * - J a i l s ' m Schottky Barrier Diode Single Diode Surface Mount O U TLIN E D IM E N S IO N S M1FM3 30V 3A > /J\§kS M D > Tjl5 0 °C MS V f = 0.46 V > f f ilR = 0.05 m A > D C /D C ‘ " B IS s JKV3 y RATINGS • lÊ ÎÎIi^ / Ë f ê a Absolute Maxim um Ratings ÎBÊ &^i|rêa

carel

Abstract: CQX18 BPW39
Contextual Info: CQX18 'w Galliumarsenid-Lumineszenzdiode GaAs Infrared Emitting Diode Anwendung: S trahlungsquelle im nahen Infrarotbereich Application: Radiation source in near infrared range Besondere Merkmale: Features: • Kunststoffgehäuse « T O 92 • Plastic case

2CZ47A

Abstract: 16GWJ2CZ
Contextual Info: TOSHIBA 20DL2CZ47A,20FL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 2QDL2CZ47A, 2QFL2CZ47A SWITCHING TYPE PO W ER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. • • • • 10.3MAX._ Repetitive Peak Reverse Voltage : VRR]y[ = 200, 300V

diode A26C

Abstract: schottky barrier type rectifier 30v 3a EP05Q04 xl marking sod-123 i50112
Contextual Info: SILICON RECTIFIER DIODE EClODSl EClODS2 EClODS4 EClODS6 lA/lOO-600V FEATURES Surface Mount Device 0 Miniature Size, thigh Surge Capability OLOW Forward Voltage Drop OLOW Reverse Leakage Current ~Packagedin 12mm Tape and Reel oNot Rolling During Assembly Dimensions

MG100H2YL1

Abstract: IP100A
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100H2YL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case . With Built-in Free Wheeling Diode . High DC Current Gain: hpE=80 Min (lC= 100A) . Low Saturation Voltage

r8060

Contextual Info: T O SH IB A 20DL2CZ51 A,20FL2CZ51 A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 2QDL2CZ51A, 20FL2CZ51A SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. • • • • Repetitive Peak Reverse Voltage : VßR]y[ = 200, 300V

Contextual Info: FAST RECOVERY DIODE 2VF30CT 2VF40CT 2VF30CTF 2VF40CTF 2.2A/300— 400V/trr : 30nsec FEATURES o TO-251AA Case ° TO-252AA Casei Surface Mount Device ° Ultra - Fast Recovery ° Dual Diodes - Cathode Common ° Low Forward.Voltage Drop • High Surge Capability

Q68000-A6418

Contextual Info: SMBD 914 Silicon Switching Diode • For high-speed switching applications Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package SMBD 914 S5D Q68000-A6418 Q 68000-A625 SOT 23 Maximum ratings Parameter Symbol Ratings

Contextual Info: SPECIFICATION DEVICE NAME : SILICON DIODE TYPE NAME : E R W 03 — 0 6 0 SPEC. No. :_ PATH_ :_ _ _ F u j i E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. \ V1 NAME DATE APPROVED