DIODE 17A 400V Search Results
DIODE 17A 400V Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
| CUZ12V |
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Zener Diode, 12 V, USC | Datasheet | ||
| MUZ5V6 |
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Zener Diode, 5.6 V, USM | Datasheet | ||
| CEZ6V8 |
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Zener Diode, 6.8 V, ESC | Datasheet |
DIODE 17A 400V Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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APT0502Contextual Info: APT17M120JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1200V RDSon = 680mΩ typ @ Tj = 25°C ID = 17A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode |
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APT17M120JCU3 OT-227) APT0502 | |
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Contextual Info: APT17M120JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1200V RDSon = 680mΩ typ @ Tj = 25°C ID = 17A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode |
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APT17M120JCU3 OT-227) | |
APT0502
Abstract: SiC MOSFET mosfet 10a 800v high power
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APT17M120JCU2 OT-227) APT0502 SiC MOSFET mosfet 10a 800v high power | |
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Contextual Info: APT17M120JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 1200V RDSon = 680mΩ typ @ Tj = 25°C ID = 17A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch |
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APT17M120JCU2 OT-227) | |
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Contextual Info: APT17F80B APT17F80S 800V, 17A, 0.65Ω Max, trr ≤250ns N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced |
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APT17F80B APT17F80S 250ns APT17F80B APT17F( | |
SA215Contextual Info: APT17F100B APT17F100S 1000V, 17A, 0.80Ω Max, trr ≤245ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft |
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APT17F100B APT17F100S 245ns SA215 | |
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Contextual Info: APT17F100B APT17F100S 1000V, 17A, 0.78Ω Max, trr ≤245ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft |
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APT17F100B APT17F100S 245ns APT17F100B | |
APT17F100B
Abstract: APT17F100S MIC4452
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APT17F100B APT17F100S 245ns APT17F100B APT17F100S MIC4452 | |
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Contextual Info: APT17F100B APT17F100S 1000V, 17A, 0.78Ω Max, trr ≤245ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft |
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APT17F100B APT17F100S 245ns | |
APT17F100B
Abstract: APT17F100S MIC4452 mosfet 1000v 9A
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APT17F100B APT17F100S 245ns APT17F100B APT17F100S MIC4452 mosfet 1000v 9A | |
diode 17a 400vContextual Info: IRFP350A A d van ced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BV0SS = 4 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA Max. @ VOS =400V |
OCR Scan |
IRFP350A 1RFP35 diode 17a 400v | |
diode 17a 400vContextual Info: SSFP16N40 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 400V Simple Drive Requirement ID25 = 17A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability |
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SSFP16N40 00A/s ISD17A di/dt250A/S TJ150 width300S; diode 17a 400v | |
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Contextual Info: IRFP350 A d van ced Power MOSFET FEATURES B V DSS - 400 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .3 Î2 17 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V |
OCR Scan |
IRFP350 | |
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Contextual Info: IRFP350A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 400 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 j-iA Max. @ VDS = 400V |
OCR Scan |
IRFP350A RFP350A 200nFS" 300nF | |
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IRFP350AContextual Info: IRFP350A A dvanced Power MOSFET FEATURES B V DSS — 4 0 0 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 -3 £ 2 17 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -3 P ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V |
OCR Scan |
IRFP350A IRFP350A | |
IRFP350AContextual Info: $GYDQFHG 3RZHU 026 7 IRFP350A FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.3Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 17 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V |
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IRFP350A IRFP350A | |
gs driver
Abstract: IRF750A
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OCR Scan |
ERF750A IRF750A gs driver IRF750A | |
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Contextual Info: $GYDQFHG 3RZHU 026 7 IRFP350 FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.3Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 17 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V |
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IRFP350 | |
IRFP350
Abstract: Diode KD 202
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OCR Scan |
IRFP350 IRFP350 Diode KD 202 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary 17N40K-MT Power MOSFET 17A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 17N40K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum |
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17N40K-MT 17N40K-MT O-220F2 QW-R502-B15 | |
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Contextual Info: IRFS350A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 p A Max. @ VDS= 400V ■ Low R qs<o n i - 0.254 £2 (Typ.) |
OCR Scan |
IRFS350A | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary 17N40K-MT Power MOSFET 17A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 17N40K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum |
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17N40K-MT 17N40K-MT QW-R502-B15 | |
IRF750Contextual Info: IRF750 A d van ced Power MOSFET FEATURES B V DSS - 400 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .3 Î2 15 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V |
OCR Scan |
IRF750 O-220 IRF750 | |
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Contextual Info: IRF750A A d van ced Power MOSFET FEATURES B V DSS - 400 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .3 Î2 15 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V |
OCR Scan |
IRF750A O-220 | |