DIODE 15 35 Search Results

DSEP 15-06A

Abstract: 1506A
Contextual Info: DSEP 15-06A HiPerFREDTM Epitaxial Diode IFAV = 15 A VRRM = 600 V trr = 35 ns with soft recovery VRSM VRRM V V 600 600 Type A C TO-220 AC C DSEP 15-06A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 140°C; rectangular, d = 0.5

Contextual Info: □IXYS DSEP 15-03 A Advanced Technical Data HiPerFRED Epitaxial Diode with Soft Recovery V RSM V V RRM V RRM 300 V t rr 30 ns TO-220 AC Type V 300 300 Symbol DSEP 15-03 A Test Conditions Maximum Ratings per diode I fr m Tc = 135°C ; rectangular, d = 0.5

diode 5082-3188

Abstract: 3188 diode
Contextual Info: 5082-3188 BAND SWITCHING PIN DIODE DESCRIPTION: PACKAGE STYLE 15 The ASI 5082-3188 is a Switching Diode Designed for low power Applications such as RF duplexers, antenna switching matrices, and time multiplex filters, Optimized for VHF/UHF band switching.

Contextual Info: DSEP 15-03A HiPerFREDTM Epitaxial Diode IFAV = 15 A VRRM = 300 V trr = 30 ns with soft recovery VRSM VRRM V V 300 300 Type A C TO-220 AC C DSEP 15-03A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 135°C; rectangular, d = 0.5

semikron SKFT 150

Abstract: Semipack 1 skfh skfh semikron thyristor Semipack skfh semikron
Contextual Info: VDRM VRRM tq Tvj = 125 °C ITRMS (maximum values for continuous operation) 350 A V µs 800 15 20 SKFT 150/08 DS SKFT 150/08 DT 1000 15 SKFT 150/10 DS 1) ITAV (sin. 180; Tcase = 76 °C; 50 Hz) 150 A SKFH 150/08 DS SKFH 150/08 DT SEMIPACK 3 Fast Thyristor/ Diode

high power 1550 dfb laser diode

Abstract: laser diode 1550 ns luminent single mode laser diode 1550 ns single mode 1550 laser diode laser diode 1550 nm
Contextual Info: 1550 nm MQW-DFB Laser Diode Modules C-15-DFB-TX-SXCXX Features • Uncooled laser diode with MQW structure • High temperature operation without active cooling • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Complies with Bellcore TA-NWT-000983

laser diode 1550nm single mode luminent

Abstract: C-15-DFB-E-B-NT C-15-DFB-E-AB-NT 1550nm 5mw laser diode slope efficiency
Contextual Info: 1550nm MQW-DFB Laser Diode C-15-DFB-E-XX-NT Features • Uncooled laser diode with MQW structure • 5mW CW operation at 0 to +70ºC • High temperature operation without active cooling • Hermetically sealed active component • Built-in InGaAs monitor photodiode

A-405

Contextual Info: PACKING OF DIODE AND BRIDGE RECTIFIERS IISURGF BULK PACKING OUTLINE BOX CARTON CARTON SIZE GROSS WEIGHT pcs (pcs) (m/m) (kgs) DO-41/A-405/TS-1 1000 50,000 460x220x270 20/15/18 DO-15 1000 40,000 460x220x270 18.5 DO-201 /DO-201 AD 500 15,000 400x315x345 17.5/21.5

DFB Laser-Diode 1550 nm

Abstract: Laser Diode Specifications 1550nm C-15-DFB-TX-SXXXX pin PD connector SC 1550 sxxxx laser diode 1550 ns luminent single mode
Contextual Info: 1550 nm MQW-DFB Laser Diode Module C-15-DFB-T/R/PX-SXXXX/XXX-X Features • Un-cooled laser diode with MQW structure • High temperature operation without active cooling • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Complies with Bellcore TA-NWT-000983

Q62702-A118

Contextual Info: SIEMENS HiRel Silicon Schottky Diode BAT 15 Features • HiRel Discrete and Microwave Semiconductor • Medium barrier diodes for detector and mixer applications • Hermetically sealed microwave package • qualified • ESA/SCC Detail Spec. No.: 5106/014

48V SMPS

Abstract: smps 48v 12v ISL6144 ISL6144IV ISL6144IVZA MO-220 0805 resistor package
Contextual Info: ISL6144 Data Sheet February 15, 2007 FN9131.3 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode

13-DXX-PX-SXXX

Abstract: InGaas PIN photodiode InGaAs Photodiode 1550nm dfb laser diode 1310nm -1550nm
Contextual Info: 1550nm Emitting DFB , 1310nm Receiving (PIN-TIA, 3.3V) , Bi-directional Diplexer Optical Module C-15/13-D02/04/06- PX-SXXX/XXX Features • Single fiber bi-directional operation • Laser diode with multi-quantum- well structure • Low threshold current

Contextual Info: S3L2 Pin Diode Switch Single Pole, Three Throw Absorptive Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. •

30-06A

Abstract: 3006A 3006aa 20/30-06A IXYS 30-06A
Contextual Info: DSEC 30-06A HiPerFREDTM Epitaxial Diode IFAV = 2x 15 A VRRM = 600 V trr = 35 ns with common cathode and soft recovery VRSM VRRM V V 600 600 TO-247 AD Type DSEC 30-06A A C A C A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings

BY228-13

Abstract: BY228-15 BY228
Contextual Info: BY228-13 , BY228-15 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21

BY228-13

Abstract: by228
Contextual Info: BY228-13 , BY228-15 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21

1SV231

Contextual Info: 1SV231 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV231 CATV Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 15 typ. · Excellent C-V characteristics, and small tracking error. · Useful for small size tuner. Maximum Ratings (Ta = 25°C)

Contextual Info: YG805C06R 60V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2

Contextual Info: DSEP 9-06CR HiPerDynFREDTM Epitaxial Diode IFAV = 9 A VRRM = 600 V trr = 15 ns with soft recovery Electrically Isolated Back Surface VRSM VRRM V V Type A C ISOPLUS 247TM C A Isolated back surface * 600 600 DSEP 9-06CR A = Anode, C = Cathode * Patent pending

Contextual Info: YG808C10R 100V / 30A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 +0.2 Low VF Super high speed switching. High reliability by planer design. 0.7±0.2 0.6 -0

IEC825

Contextual Info: SFP 1.25Gbps With DDM Transceiver SWFP7251-23-*25+ Product Data sheet VER0.1/03-15-2006 Features l Transceiver unit with independent 1550nm DFB Laser diode transmitter 1490nm InGaAs PIN photodiode receiver l l l l l Meet SFP MSA and SFF-8472 with single LC receptacle

EN60747-5-2

Abstract: PS9821-1 PS9821-2 VDE0884
Contextual Info: PHOTOCOUPLER PS9821-1,-2 HIGH CMR, 15 Mbps OPEN COLLECTOR OUTPUT TYPE 8-PIN SSOP SO-8 −NEPOC 3.3 V HIGH-SPEED PHOTOCOUPLER Series− DESCRIPTION The PS9821-1 and PS9821-2 are active-low type high-speed photocouplers that use a GaAlAs light-emitting diode

PIN Photodiode 1550nm

Abstract: PIN-TIA 5v InGaAs Photodiode 1550nm
Contextual Info: 1550nm Emitting , 1310nm Receiving PIN-TIA, 5V , Bi-directional Diplexer Optical Module C-15/13-F01/03/05- PX-SXXX/XXX Features • Single-fiber bi-directional operation • Laser diode with multi-quantum- well structure • Low threshold current • InGaAs/InP PIN Photodiode with TIA

Contextual Info: Preliminary Datasheet RJL6014DPP R07DS0262EJ0200 Previous: REJ03G1853-0100 Rev.2.00 Mar 01, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode trr = 180 ns typ. (at IF = 15 A, VGS = 0, diF/dt = 100 A/s, Ta = 25 C)