DIODE 15 35 Search Results

DPG15I200

Abstract: dpg15i200pa DPG 15 I 200 PA
Contextual Info: DPG 15 I 200 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 35 ns Part number DPG 15 I 200 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

DPG15I200

Abstract: DPG15I200PA
Contextual Info: DPG 15 I 200 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 35 ns Part number DPG 15 I 200 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

DPG15I300PA

Contextual Info: DPG 15 I 300 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 15 A 35 ns Part number DPG 15 I 300 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

DPG15I300PA

Abstract: DPG 30 I 300 PA
Contextual Info: DPG 15 I 300 PA final V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 15 A 35 ns Part number DPG 15 I 300 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

Contextual Info: DPG 15 I 300 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 15 A 35 ns Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current

Contextual Info: DPG 15 I 200 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 35 ns Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current

Contextual Info: FFP15S60S 15 A, 600 V, STEALTH II Diode Features Description • Stealth Recovery Trr = 35 ns @ IF = 15 A The FFP15S60S is a STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as

Contextual Info: DSA 15 I 45 PA advanced V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 45 V 15 A 0.63 V Part number 3 1 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses

DPG15I400PM

Abstract: DPG15I400
Contextual Info: DPG 15 I 400 PM V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 15 A 45 ns Part number DPG 15 I 400 PM 3 1 Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips

Contextual Info: □IXYS DSEP 15-06 A Advanced Technical Data HiPerFRED Epitaxial Diode with Soft Recovery V RSM V V RRM VRRM 600 V t rr 35 ns TO-220 AC Type V 600 600 Symbol DSEP 15-06 A Test Conditions Maximum Ratings per diode I frm Tc = 135°C ; rectangular, d = 0.5

EU-38-TTL

Contextual Info: EU-38-TTL TECHNICAL DATA Laser Diode Driver Features • • • constant laser diode current adjustable with potentiometer modulation input laser diode output power independent from supply voltage Specification • • • • • dimension: 35 x 15 mm² +/- 0.5 mm

EU-38-1

Contextual Info: EU-38-1 TECHNICAL DATA Laser Diode Driver Features • • constant laser diode current adjustable with potentiometer laser diode output power independent from supply voltage Specification • • • dimension: 35 x 15 mm² +/- 0.5 mm supply voltage: 4.0 - 5.0 VDC

Contextual Info: ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S 15 A, 600 V, STEALTHTM Diode Features Description • Stealth Recovery trr = 29.4 ns @ IF = 15 A The ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S is a STEALTH diode optimized for low loss performance in high frequency hard switched applications. The

Contextual Info: HVGT CL03-15 15kV 200mA HIGH VOLTAGE DIODE Outline Drawings : mm CL03-15 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 7.0 o 1.2 Features

Contextual Info: DSB 15 IM 45IB advanced V RRM = I FAV = VF = Schottky High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Marking on product 45 V 15 A 0.55 V 1 2 3 Applications: Features / Advantages: Very low Vf Extremely low switching losses

Contextual Info: HVCA CL03-15 15kV 200mA HIGH VOLTAGE DIODE Outline Drawings : mm CL03-15 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 7.0 o 1.2 Features

pin diode switch up to 10 GHz

Abstract: MSWSE-010-15 A 0503
Contextual Info: MSWSE-010-15 Silicon PIN Diode Switch Element 0503 Molded Plastic DFN Package Description Features The MSWSE-010-15 is a PIN diode SPST switch element designed for medium incident power applications, up to 10W C.W. It has low insertion loss and medium isolation below 3.0 GHz.

Contextual Info: DSEP 15-06A HiPerFREDTM Epitaxial Diode IFAV = 15 A VRRM = 600 V trr = 35 ns with soft recovery Preliminary Data VRSM VRRM V V 600 600 Type A C TO-220 AC C DSEP 15-06A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS

DPG15I400PM

Contextual Info: DPG 15 I 400 PM V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 15 A 45 ns Part number 3 1 Backside: isolated Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current

Contextual Info: FFPF15S60S 15 A, 600 V, STEALTHTM II Diode Features Description • Stealth Recovery Trr = 35 ns @ IF = 15 A The FFPF15S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

BZX88

Abstract: BAW63 BAW63A BAW63B BAW64 BAW65 BAW66 BAW67 BAW68 BZX88-C2V7
Contextual Info: MICRO-E SILICON PLANAR HIGH-SPEED SW ITCHING DIODES Ratings and Characteristics at 2 5 °C ambient temperature Type BAW63 BAW63A BAW63B BAW64 BAW65 BAW66 BAW67 BAW68 Description Max. Vrw m Volts 60 Single diode 30 Single diode Single diode 15 60 Common cathode diode pair

Contextual Info: DSEP 15-06A HiPerFREDTM Epitaxial Diode IFAV = 15 A VRRM = 600 V = 35 ns trr with soft recovery VRSM VRRM V V 600 600 Type A C TO-220 AC C DSEP 15-06A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 140°C; rectangular, d = 0.5

DSEP 15-06A

Abstract: 1506A
Contextual Info: DSEP 15-06A HiPerFREDTM Epitaxial Diode IFAV = 15 A VRRM = 600 V trr = 35 ns with soft recovery VRSM VRRM V V 600 600 Type A C TO-220 AC C DSEP 15-06A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 140°C; rectangular, d = 0.5

Contextual Info: DPG15I300PA HiPerFRED² VRRM = 300 V I FAV = 15 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DPG15I300PA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips