DIODE 1309 Search Results

ENN501I

Abstract: SVC201SPA
Contextual Info: Ordering number : ENN501I SVC201SPA Diffused Junction Type Silicon Diode SVC201SPA Varactor Diode IOCAP for FM Receiver Electronic Tuning Features Package Dimensions unit : mm 1184 [SVC201SPA] 2.2 3.0 4.0 1.8 0.4 0.5 15.0 The SVC201SPA, 201Y are varactor diodes of

kt 501

Abstract: SVC201SPA SVC201Y "FM receiver"
Contextual Info: Ordering number :EN501H SVC201SPA, 201Y Duffused Junctions Type Sillicon Diode Varactor Diode IOCAP for FM Receiver Electronic Tuning Features Package Dimensions • The SVC201SPA, 201Y are varactor diodes of hyper abrupt junction structure fabricated with ion implantation technology. It is intended for use in FM

transistor B 1184

Abstract: SVC201SPA SVC201Y "FM receiver" varactor diode fm
Contextual Info: Ordering number :EN501H SVC201SPA, 201Y Duffused Junctions Type Silicon Diode Varactor Diode IOCAP for FM Receiver Electronic Tuning Features Package Dimensions • The SVC201SPA, 201Y are varactor diodes of hyper abrupt junction structure fabricated with ion implantation technology. It is intended for use in FM

80N120

Contextual Info: SIEMENS BUP 602D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode P in i Pin 2 Pin 3 G C E Type VCB h Package Ordering Code BUP 602D

PEAK DETECTOR

Abstract: 2N2222A/ZTX Silicon Detector Corporation ISL8116 simple PEAK DETECTOR PEAK DETECTOR application EL8202 germanium diode ZTX 15 2n2222a making
Contextual Info: Feedback Gives Peak Detector More Precision Application Note May 8, 2007 AN1309.0 Tamara A. Papalias and Mike Wong The standard method for measuring the peak of a signal involves the use of a diode. If the diode is used alone, the input voltage has to be significantly larger than the turn-on

lm 3298

Abstract: LM 3171 lm 1628 NS501 um 3567 LM 1709 1565R 1201 varactor 3745L
Contextual Info: O rdering num ber : EN501H SVC201SPA.201Y N0.5OIH Diffused Junction Type Silicon Diode Varactor Diode IOCAP for FM Receiver Electronic Tuning M F e a tu re s The SVC201SPA, 201Y are varactor diodes of hyper abrupt junction structure fabricated with ion implantation technology. It is intended for use in FM receiver electronic tuning applications.

Contextual Info: Doc No. TT4-EA-13097 Revision. 2 Product Standards Schottky Barrier Diode DB2J20600L DB2J20600L Silicon epitaxial planar type Unit: mm For high frequency rectification DB2X206 in SMini2 type package 1.25 0.35 0.13 2 • Features 1.7 2.5  Low forward voltage VF

Contextual Info: Doc No. TT4-EA-13095 Revision. 2 Product Standards Zener Diode DZ5J120D0R DZ5J120D0R Silicon epitaxial planar type Unit: mm For surge absorption circuit DZ5X120D in SMini5 type package 2.0 0.2 5 • Features 4 1.25 2.1  Excellent rising characteristics of zener current Iz

Contextual Info: Doc No. TT4-EA-13098 Revision. 2 Product Standards Schottky Barrier Diode DB2J40600L DB2J40600L Silicon epitaxial planar type Unit: mm For high speed switching circuits 1.25 0.35 • Features 0.13 2 1.7 2.5  Small reverse current IR  Short reverse recovery time trr

Contextual Info: Doc No. TT4-EA-13096 Revision. 2 Product Standards Zener Diode DZ5J100D0R DZ5J100D0R Silicon epitaxial planar type Unit: mm For surge absorption circuit DZ5X100D in SMini5 type package 2.0 0.2 5 • Features 4 1.25 2.1  Excellent rising characteristics of zener current Iz

Contextual Info: Doc No. TT4-EA-13099 Revision. 2 Product Standards Schottky Barrier Diode DB2S40600L DB2S40600L Silicon epitaxial planar type Unit: mm For high speed switching DB2J406 in SSMini2 type package 0.8 0.13 2 • Features 1.2 1.6  Small reverse current IR  Short reverse recovery time trr

SB02-03C

Contextual Info: Ordering number :EN2982A SB02-03C Shottky Barrier Diode 30V, 200mA Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1148 [SB02-03C] Features · Low forward voltage (VF max=0.55V).

Contextual Info: Ordering number : EN2985B SB20-03P Schottky Barrier Diode http://onsemi.com 30V, 2A, Low IR, Single PCP Applications • High frequency rectification switching regulators, converters, choppers Features • • • • Fast reverse recovery time (trr max=20ns)

SB20-03P-TD

Abstract: rectifier sc-62
Contextual Info: SB20-03P Ordering number : EN2985B SANYO Semiconductors DATA SHEET SB20-03P Schottky Barrier Diode 30V, 2A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • • • Fast reverse recovery time (trr max=20ns)

Contextual Info: SB20-03P Ordering number : EN2985B SANYO Semiconductors DATA SHEET SB20-03P Schottky Barrier Diode 30V, 2A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • • • Fast reverse recovery time (trr max=20ns)

CD214B

Abstract: phenolic resin
Contextual Info: MATERIAL DECLARATION SHEET Material Number CD214B Series Product Line Diode Products Compliance Date 1 Jan 2005 RoHS Compliant Yes No. Construction Element subpart 1 Dice 2 High-melting point Solder 3 Lead frame & clip MSL Homogeneous Material Silicon with metal

CD216A

Contextual Info: MATERIAL DECLARATION SHEET Material Number CD216A Series Product Line Diode Products Compliance Date 1 Jan 2005 RoHS Compliant Yes No. Construction Element subpart MSL Homogeneous Material 1 Dice Silicon with metal 2 High-melting point solder paste Tin-Lead solder

CD0603

Contextual Info: MATERIAL DECLARATION SHEET Material Number CD0603 Series Product Line Diode Products Compliance Date 1 Jan 2005 RoHS Compliant Yes No. 1 2 3 4 5 Construction Element subpart FR-5 BOARD Wafer Al Wire Silver paste Molding Compound Headquarters Riverside CA

9716 diode

Abstract: 4433 an 17823 8906 17823 A 6077 D1069N D1809N D269N D3301N
Contextual Info: M3.2 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 560 V 3600 V + Kühlblöcke für Wasserkühlung Wasser men. vL pro KB Temp. tA Satzstrom Id Verlustl. P d Schaltung Diode D [°C]

CD1005

Abstract: material declaration sheet Diode PT 520 diode 1436
Contextual Info: MATERIAL DECLARATION SHEET Material Number CD1005 Series Product Line Diode Products Compliance Date 1 Jan 2005 RoHS Compliant Yes No. 1 2 3 4 5 Construction Element subpart FR-5 BOARD Wafer Al Wire Silver paste Molding Compound Headquarters Riverside CA

Contextual Info: Ordering number:EN2985 SB20-03P Schottky Barrier Diode 30V, 2A Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1163 [SB20-03P] Features · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=20ns).

727 thyristor

Abstract: M32 diode an 7591 thyristor 4592 D849N 8906 D1069N D1809N D269N D3301N
Contextual Info: M3.2 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 560 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]

transistor 0882

Abstract: CD214C
Contextual Info: MATERIAL DECLARATION SHEET Material Number CD214C Series Product Line Diode Products Compliance Date 1 Jan 2005 RoHS Compliant Yes No. Construction Element subpart MSL Homogeneous Material 1 Dice Silicon with metal 2 High-melting point Solder paste Tin-Lead solder

CD214A

Contextual Info: MATERIAL DECLARATION SHEET Material Number CD214A Series Product Line Diode Products Compliance Date 1 Jan 2005 RoHS Compliant Yes No. Construction Element subpart MSL Homogeneous Material 1 Dice Silicon with metal 2 High-melting point Solder paste Tin-Lead solder