DIODE 1137 Search Results

Contextual Info: DATA SHEET PHOTO DIODE NDL5171P Series 1 300 nm OPTICAL FIBER COMMUNICAITONS ^100 ¿an GERMANIUM AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5171P Series is a Germanium avalanche photo diode module with multimode fiber. It is designed for detectors of long wavelength transmission systems.

ir10 diode

Abstract: LM5142 lm568 diode IR10 1M5603 IN5139 MV140 diode 718
Contextual Info: 1M-9/93 IDXDSD Series 1M1401 - 1M1412 1M6520 - 1M6525 1M5461A-1M5476A SURFACE MOUNT TUNING DIODES I electronics,. Many popular axial leaded glass packaged tuning diode types are now available in the MSI 1M Case for surface mount assemblies. The tuning diode chips, mounted on

P200D

Contextual Info: SIEMENS BUP200D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP 200 D ^CE h 1200V 3.6A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code

AC100

Abstract: T2525 T2525N038 T2525N238 T2525N638
Contextual Info: Features • • • • • • No external components except PIN diode Supply-voltage range: 4.5 V to 5.5 V Automatic sensitivity adaptation AGC Automatic strong signal adaptation (ATC) Enhanced immunity against ambient light disturbances Available for carrier frequencies between 30 kHz to 76 kHz; adjusted by Zener diode

Contextual Info: SIEMENS BUP 200 D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP 200 D V'CE h 1200V 3.6A Pin 1 Pin 2 Pin 3 G C E Package

SDP20S120D

Abstract: C4692 SEMISOUTH sdp20s120 solar inverter SemiSouth Laboratories
Contextual Info: Silicon Carbide PRELIMINARY SDP20S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature

SEMISOUTH

Abstract: SDA10S120 C-183 silicon carbide
Contextual Info: Silicon Carbide PRELIMINARY SDA10S120 Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current

Contextual Info: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT210 PACKAGE DIMENSIONS DESCRIPTION The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated.

MCP3041

Abstract: MCP3040 MOC3040 equivalent MOC30* inductive MCP3031 MOC3031 equivalent MCP3030 ic moc3041 MCP303X MOC3041 replacement
Contextual Info: QUALITY TECHNOLOGIES VDE APPROVED ZERO-CROSSING TRIACS ZERO-CROSSING PACKAGE DIMENSIONS t 6.86 DESCRIPTION These devices are optically isolated zero-crossing triac drivers. They consist of a Gallium Arsenide infrared emitting diode optically coupled to a photosensitive

LFB01

Abstract: LFB01L
Contextual Info: Ordering number:EN1885C LFB01, 01L Silicon Planar Leadless Type Ultrahigh-Speed Switching Diode Features Package Dimensions • Highly reliable leadless glass sleeve structure. · Very small size. · Capable of being suface-mounted. · Forward voltage : VF max=1.2V.

AC100

Abstract: T2526 atmel 350 so8 atmel 336
Contextual Info: Features • • • • • • • No external components except PIN diode Supply-voltage range: 2.7 V to 5.5 V Automatic sensitivity adaptation AGC Automatic strong signal adaptation (ATC) Automatic supply voltage adaptation Enhanced immunity against ambient light disturbances

transistor KJJ

Abstract: C-1248 C1243 C1248 C1250 C2079 MCT210 Phototransistor with base emitter CI242 C1256
Contextual Info: I5 Q PHOTOTRANSISTOR OPTOCOUPLER IPTOELEtTHIIICS MCT 210 DESCRIPTION PACKAGE DIMENSIONS The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated.

PS2703-4

Contextual Info: HIGH ISOLATION VOLTAGE SOP MULTI OPTOCOUPLER ps270M FEATURES_ DESCRIPTION_ • PS2703-1, -2, and -4 series are optically coupled isolators containing a GaAs light emitting diode and a NPN silicon phototransistor. Each is mounted in a plastic SOP Small Out­

DIODE 2216

Abstract: D1069N D1809N D269N D3301N D749N D849N DIODE 22-16
Contextual Info: M3 - Schaltung ~ Anschlußspannung ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 670 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C] [A] [W]

diode in 5392

Abstract: 10331 D1029N D2209N D2659N D4401N D660N D748N in 4067 diode
Contextual Info: ~ ~ ~ B6 - Schaltung Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 930 V 2200 V Kühlblöcke für Luftselbstkühlung - Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C] [A] [W]

D1029N

Abstract: D2209N D2659N D4401N D748N K50 DIODE
Contextual Info: ~ ~ ~ B6 - Schaltung Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 903 V 2200 V Kühlblöcke für Wasserkühlung - Wasser men. vL pro KB Temp. tA Satzstrom Id Verlustl. P d Schaltung Diode D [°C] [A] [W]

F5E1

Contextual Info: Emitter Specifications F5D1, F5D2, F5D3, F5E1, F5E2, F5E3 Infrared Emitter Gallium Aluminum Arsenide Infrared Emitting Diode T h e F5D and F5E Series are infrared emitting diodes. They exhibit high power output and a typical peak wavelength o f 880 nanom eters and

D1029N

Abstract: D2209N D2659N D4401N D660N D748N 548 1334 diode
Contextual Info: ~ ~ ~ B6 - Schaltung Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 930 V 2200 V Kühlblöcke für Luftselbstkühlung - Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C] [A] [W]

TA 3600

Abstract: T1929N T380N T869N
Contextual Info: M1C - Schaltung ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 440 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode

3127

Abstract: k50 transistor D1029N D2209N D2659N D4401N D748N
Contextual Info: ~ ~ ~ B6 - Schaltung Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 903 V 2200 V Kühlblöcke für Wasserkühlung - Wasser men. vL pro KB Temp. tA Satzstrom Id Verlustl. P d Schaltung Diode D [°C] [A] [W]

MCT210

Abstract: diode sy 400 8
Contextual Info: [ ì l i PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT210 PACKAGE DIMENSIONS DESCRIPTION The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared em itting diode. The MCT210 has a specified m inim um CTR of 50%, saturated, and 150%, unsaturated.

NEC TTE

Contextual Info: DATA SHEET LASER DIODE NDL7670P 1 310 nm OPTICAL CATV/ANALOG APPLICATIONS InGaAsP MQW-DFB LASER DIODE MODULE DESCRIPTION NDL7670P is a 1 310 nm DFB D is trib u te d Feed-Back laser d io d e, th a t has a n e w ly d e v e lo p e d M u ltip le Q u a n tu m W e ll (M QW ) stru c tu re , B u tte rfly package m o d u le w ith o p tic a l is o la to r. It is e s p e cia lly desig ne d

Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE TENTATIVE DATA COLOR TV HORIZONTAL OUTPUT APPLICATIONS. • • • • High Voltage : V c b o = 1700V High Speed Switching : Inductive Load tf=0.3,«s (Typ.) Collector Metal is Fully Covered with Mold Resin. Built-in Damper Diode.

Contextual Info: HIGH ISOLATION VOLTAGE SOP MULTI PHOTOCOUPLER 03'J ¡>32703-4 FEATURES_ DESCRIPTION_ • PS2703-1, -2, and -4 series are optically coupled isolators containing a GaAs light emitting diode and a NPN silicon phototransistor. Each is mounted in a plastic SOP Small Out­