DIODE 11 GK Search Results

MCMA120UJ1800ED

Contextual Info: MCMA120UJ1800ED preliminary 3~ Rectifier Thyristor Module VRRM = 1800 V I DAV = 117 A I FSM = 500 A 3~ Rectifier Bridge, half-controlled high-side + free wheeling Diode Part number MCMA120UJ1800ED Backside: isolated 17 15 12 18 16 13 10 / 11 19 / 20 2/3

MCMA120UJ1800ED

Contextual Info: MCMA120UJ1800ED preliminary 3~ Rectifier Thyristor Module VRRM = 1800 V I DAV = 117 A I FSM = 500 A 3~ Rectifier Bridge, half-controlled high-side + free wheeling Diode Part number Backside: isolated 17 15 12 18 16 13 10 / 11 19 / 20 2/3 4/5 6/7 21 / 22

Contextual Info: / I T S C S -1H 0 M S 0 N ^ 7 1 , [10 gK [l[L[I(gîœMÔ©i L6201 0.3Q DMOS FULL BRIDGE DRIVER ADVANCE DATA to 48V and e ffic ie n tly at high sw itching speeds. A ll the logic inputs are T T L , CMOS and fjtC com patible. Each channel (half-bridge o f the

74LCX74

Contextual Info: s = 7 ^7# S G S -T H O M S O N Kl gKLiM(s iO(gS 74LCX74 LOW VOLTAGE CMOS DUAL D-TYPE FLIP FLOP WITH 5V TOLERANT INPUTS PRELIMINARY DATA . 5VTOLERAr\TT INPUTS . HIGHSPEED: fM A X = 150 MHz (MAX.) at VCc =3V . POWER-DOWN PROTECTION ON INPUTS AND OUTPUTS . SYMMETRICAL OUTPUT IMPEDANCE:

Contextual Info: 40 V, 26 A, 6.9 mΩ Low RDS ON N ch Trench Power MOSFET GKI04076 Features Package  V(BR)DSS - 40 V (ID = 100 µA)  ID - 26 A  RDS(ON) - 8.9 mΩ max. (VGS = 10 V, ID = 23.3 A)

Contextual Info: 60 V, 40 A, 4.8 mΩ Low RDS ON N ch Trench Power MOSFET GKI06071 Features Package  V(BR)DSS - 60 V (ID = 100 µA)  ID - 40 A  RDS(ON) - 6.5 mΩ max. (VGS = 10 V, ID = 34.0 A)

TSS0P16

Contextual Info: s= 7 SGS-THOMSON ^7# Kl gKLiM(s iO(gS 74LVQ157 LOW VOLTAGE QUAD 2 CHANNEL MULTIPLEXER . HIGHSPEED: tpD = 5 ns (TYP.) at Vcc = 3.3V . INPUT & OUTPUT TTL COMPATIBLE LEVELS . LOW POWER DISSIPATION: Ice = 4 pA (MAX.) at T a = 25 °C . LOW NOISE: V o l p = 0.2V (TYP.) at Vcc = 3.3V

Contextual Info: 40 V, 26 A, 6.9 mΩ Low RDS ON N ch Trench Power MOSFET GKI04076 Features Package  V(BR)DSS - 40 V (ID = 100 µA)  ID - 26 A  RDS(ON) - 8.9 mΩ max. (VGS = 10 V, ID = 23.3 A)

Contextual Info: 60 V, 40 A, 4.8 mΩ Low RDS ON N ch Trench Power MOSFET GKI06071 Features Package  V(BR)DSS - 60 V (ID = 100 µA)  ID - 40 A  RDS(ON) - 6.5 mΩ max. (VGS = 10 V, ID = 34.0 A)

Contextual Info: s = 7 SGS-THOMSON ^7# Kl gKLiM(s iO(gS STD4NB40 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE STD4NB40 V dss RDS(on) Id 400 V < 1 .8 a 3.7 A • TYPICAL RDS(on) = 1.47 Q. m EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES

smd 27E

Abstract: MCP3041 smd TRANSISTOR 27e c2075 transistor C2078 MCP3040 MOC3041 optocoupler S7E SMD TRANSISTOR transistor C2075 optocoupler moc3031
Contextual Info: DUALITY- TE CHNOLOG IES CÔRP VDE APPROVED ZERO-CROSSING TRIACS QUALITY TECHNOLOGIES 7non ranee,ur 30 mA MCP3030* MCP3040/0Z* ZEHO-GKUaaiNU 15mAMCP3031 MCP3041/1Z MCP3032 MCP3042/2Z ’ bVE ' DESCRIPTION PACKAGE DIMENSIONS These devices are optically isolated zero-crossing triac

Contextual Info: s = 7 SGS-THOMSON ^7# Kl gKLiM(s iO(gS STP9NB65 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE STP9NB 65 V dss RDS(on) Id 650 V < 0 .7 5 Q 9A . TYPICAL R DS(on) = 0.62 Q m EXTREMELY HIGH dv/dt CAPABILITY . . . . 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

Contextual Info: s = 7 SGS-THOMSON ^7# Kl gKLiM(s iO(gS STB9NB65 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE STB9NB 65 V dss RDS(on) Id 650 V < 0 .7 5 Q 9A . TYPICAL R DS(on) = 0.62 Q m EXTREMELY HIGH dv/dt CAPABILITY . . . . 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

LCX574

Abstract: SC1036 74LCX574
Contextual Info: s = 7 S G ^7# S - T H O M S O N Kl gKLiM(s iO(gS 74LCX574 OCTAL D-TYPE FLIP FLOP NON INVERTING WITH 5V TOLERANT INPUTS AND OUTPUTS PRELIMINARY DATA . 5VTOLERAr\TT INPUTS AND OUTPUTS . HIGHSPEED: fMAX = 150 MHz (MIN.) at Vcc = 3V . POWER-DOWN PROTECTION ON INPUTS

5 pins relay pin diagram

Abstract: 5 pin relay 12v 5 V DC RELAY 5 pin relay data sheet specifications of 12v relay 5v 12v relay relay 5v relay 12v 3a datasheet relay 12v dc 5 pin 12v relay
Contextual Info: AGK2 ULTRA-SMALL PACKAGE 2 FORM A POLARIZED RELAY GK-RELAYS FEATURES 6.00 .236 5.20 .205 5.50 .217 mm inch • Compact body saves space Thanks to the small surface area of 6.0 mm x 5.2 mm .236 inchx.205 inch and low height of 5.5 mm .217 inch, the packaging

74LCX374

Contextual Info: s = 7 ^7# S G S -T H O M S O N Kl gKLiM(s iO(gS 74LCX374 OCTAL D-TYPE FLIP FLOP NON INVERTING WITH 5V TOLERANT INPUTS AND OUTPUTS PRELIMINARY DATA . 5VTOLERAr\TT INPUTS AND OUTPUTS . HIGHSPEED: fMAX = 150 MHz (MIN.) at VCc = 3V . POWER-DOWN PROTECTION ON INPUTS

Contextual Info: Gate T u rn -o ff T hyristors ~ All types Symmetrical Types ^DRM V gk= -2V ^RRM V GK Note 1 (Note 1) (Note 2) (V) (V) (V) 1200-2500 100-2000 600-1800 100-1400 Type WG5012Rxx to 25Rxx WG6006RXX to 18Rxx WG9006Rxx to 14Rxx WG10026Rxx to 36Rxx WG10037Rxx to 45Rxx

WG25008SM

Abstract: WG5018 WG5026S westcode wg WG15026R WG6006RXX WG7008S Diode Westcode Gate Turn-Off Thyristors all types of thyristors
Contextual Info: Gate Turn-off Thyristors ~ All types Symmetrical Types V DRM Type V RRM V6K ^TGQM @ CS Note 1 WG5012Rxx to 25Rxx T(AV) t V GK = -2V (Note 1) (Note 2) -w r (Note 3) I 2t •^T(RMS) ■^TSM(l) ^TSM(2) Tmse = 25°C 10ms 2 ms (Note 3) (Note 4) (Note 4) (A2s)

WG5026S

Abstract: WG6006RXX X103 westcode diodes westcode wg
Contextual Info: Gate T urn-off Thyristors ~ All types Symmetrical Types V R RM ^TGQM@ C S CO ^DRM > Type V GK = -2V I t AV T « =55°C •^TSM(2) 2ms I2t (Note 4) (kA) (Note 4) (Note 4) (kA) (A 2s) 4 7.2 80 x 103 9 130 x 1 0 3 9-8 18 500 x 103 •^T(RMS) W ^ T SM (1) 10ms

DIN 933

Abstract: GDML 3011 LED 24 RG LG diode 831 GDME 311 228-G1 GDML GDML 211 GDML 2011 GE1 G gdml 2011 DIN 43650-A
Contextual Info: GDM Series DIN 43650-A/ISO 4400 Cable socket, self-assembly Product description • in appliances and equipment subject to vibrations, e.g. track-bound vehicles, building machinery, conveying systems, using the crimp connection method GDMC Further information

Contextual Info: IRF340 A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 11 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V

Contextual Info: IRFP340A A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 11 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V

PN channel MOSFET 10A

Abstract: 1S71 1S74 C035 STD20N06 TJ50D NMOS depletion pspice model diode 935 lg
Contextual Info: S G S -T H O M S O N HUSCTIiMOÛS STD20N06 N - CHANNEL ENHANCEMENT MODE ’’ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TYPE V dss RDS on Id STD20N06 60 V < 0.03 n 20 A (*) . . • . . . . ■ TYPICAL RDS(on) = 0.026 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

RTL 602 W

Abstract: IC802 transistor T1J K40 fet IC-221 CN602 transistor k38 w7 transistor k79 VC175 DFJP050ZA002
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