DIODE 1058 Search Results

105386

Abstract: dek 1.5 47346-0001 WDK 2.5 105366 105396 105446 WDK 4N 10-588 102260
Contextual Info: Feed Through Terminals WDK 2.5 D WDK 2.5 D Diode terminal for lamp test circuits Diode terminal for lamp test circuits Branch with Diode Branch with Diode WDK 2.5 LD WDK 2.5 LD Branch with LED Branch with LED Terminal Block Selection Data Available Options

UA 741 SMD

Abstract: uA 741 automatic laser power control 6 pin laser diode capacitor 475 laser diode driver circuit automatic power control SMD-Ferrit MS-026 VSC7938 VSC7939
Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 3.125Gb/s Laser Diode Driver with Automatic Power Control VSC7939 Features Applications • Power Supply: 3.3V or 5V ±5% • AC-Coupled to Laser Diode • SONET/SDH at 622Mb/s, 1.244Gb/s,

82952

Abstract: smd 4-pin
Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 3.125Gb/s Laser Diode Driver with Automatic Power Control VSC7939 Features Applications • Power Supply: 3.3V or 5V ±5% • AC-Coupled to Laser Diode • SONET/SDH at 155Mb/s, 622Mb/s, 1.244Gb/s,

MIP51

Abstract: MIP806 MIP803 MIP501 MIP704 MIP805 MIP824 MIP825 MIP826 MIP2
Contextual Info: New EL Display Driving IPD Series with Built-in Diode MIP824/MIP825/MIP826 „ Overview Unit : mm This series of IPDs Intelligent Power Devices incorporates a diode which formerly was connected externally. It can drive an EL display with high brightness and low power consumption.

uA 741

Abstract: RF resistor 32-1059 SMD resistor 805 capacitor 475 MS-026 VSC7938 VSC7939 VSC7940 CD 741
Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 3.125Gb/s Laser Diode Driver with Automatic Power Control VSC7938 Features Applications • SDH/SONET at 622Mb/s, 1.244Gb/s, 2.488Gb/s, 3.125Gb/s • Power Supply: 3.3V or 5V ±5% • AC-Coupled to Laser Diode

Power MOSFET, toshiba

Abstract: MOSFET TOSHIBA HIGH POWER MOSFET TOSHIBA MOSFET NOTEBOOK MOSFET dual SOP-8 BEE0022A TPC8A01 Power MOSFET, P, toshiba N and P MOSFET
Contextual Info: 2003-3 News New Product Guide Power MOSFETs with Schottky Barrier Diode for DC/DC converters General Description Appearance To meet requirements for smaller MOSFETs used for DC switches, Toshiba has developed MOSBDs by integrating a power MOSFET and a Schottky barrier diode into a single die. As shown

1058760000

Abstract: 1011100000 1011180000 1011120000 9537550000 0338000000
Contextual Info: WTR 2.5 D WTR 2.5 Disconnect Terminals with 2 test sockets StB 2.3 with diode plug and with diode plug 2.3 test socket (StB) 9 / i \ 'A it Polarity base from view of closed side P lu g Lever Lever Polarity base from view of closed side P lu g Terminal Block Selection Data

diode 1n4007

Abstract: 1N4007 diodes 1n4007 FAH diode diode,1N4007 Diode -1N4007 1a 1000v 47146 I-26366 DIODE1N4007
Contextual Info: Diode Plugs D LS 2 DLS 2 for SAKR-D for SAKR-D WSD 2.5 WTR 2.5 D DQS 2 for 6mm-wide terminus mm SAKR-D SAKR-D WTR 2.5 D JB ^ with diode plug with test sockets m p Term, width +.2 assy. tol. mm Insulation stripping length mm C onnection data Screw connection, solid

10-5846

Contextual Info: WTR 2.5 Screw Clamp 35 mm DIN-Rail Terminals Disconnect WTR 2.5 D WTR 2.5 D WTR 2.5 with diode plug with StB without plug with diode plug and A mji JUi 2.3 test socket D im en sions W idth/Length/Height mm in. With TS 35 x 7.5 ^ With TS 32 c_j mm (in.) Insulation stripping length

diode IN 4007

Abstract: diode 4007 1N4007 IN 4007 diodes in 4007 diode diode N 4007 n 4007 KH 4007 diode diode "IN 4007"
Contextual Info: Diode Plug DLS 2 DLS 2 for SAKR-D for SAKR-D DQS 2 *W WSD 2.5 n DLS 2 WTR 2.5 D n li SAKR-D WTR 2.5 D SAKR-D with diode plug with test sockets » ' ci \ I * ’ » : k- n T Dimensions Terminal width (+ assembly tolerance 0.2 mm (in.) 6.5 (.26) 6.5 (.26)

TUNNEL DIODE

Contextual Info: ACTM-1058 Tunnel Diode Detector Modules Features: • Contains hermetically sealed modules, internal RF matching, DC return, and RF bypass capacitor. • The video port is protected from static or transient charges. • Input impedance matching. • Models may be chosen for broadband RF

Contextual Info: ACTM-1058 Tunnel Diode Detector Modules Features: • Contains hermetically sealed modules, internal RF matching, DC return, and RF bypass capacitor. • The video port is protected from static or transient charges. • Input impedance matching. • Models may be chosen for broadband RF

ACTM-1058

Contextual Info: ACTM-1058 TUNNEL DIODE DETECTOR MODULES Frequency Range min Sensitivity (min) Flatness vs. Frequency (max) Typical TSS Typical VSWR Nominal Video Capacitance 6 – 18 700 1.0 -49 2.5:1 9 GHz mV/mW ±dB dBm Ratio pF NOTES: Maximum input power: +14dBm (3dB guardband for +17dBm possible burnout)

diode 1058

Abstract: ACTM-1058 M107 M103 M105
Contextual Info: ACTM-1058 TUNNEL DIODE DETECTOR MODULES Frequency Range min Sensitivity (min) Flatness vs. Frequency (max) Typical TSS Typical VSWR Nominal Video Capacitance 6 – 18 700 1.0 -49 2.5:1 9 GHz mV/mW ±dB dBm Ratio pF NOTES: Maximum input power: +14dBm (3dB guardband for +17dBm possible burnout)

SR 4600 A

Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 348 S 16.20 S Elektrische Eigenschften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak forward reverse voltage

Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 348 S 16.20 S Elektrische Eigenschften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak forward reverse voltage

DRD5150H65

Contextual Info: DRD5150H65 Rectifier Diode DS6059 – 1 April 2011 LN28299 FEATURES KEY PARAMETERS • Double Side Cooling  High Surge Capability VRRM IF(AV) IFSM 6500V 5150A 82500A VOLTAGE RATINGS Part and Ordering Number DRD5150H65 DRD5150H62 DRD5150H58 DRD5150H54

Contextual Info: DRD5150H65 Rectifier Diode DS6059 – 1 April 2011 LN28299 FEATURES KEY PARAMETERS • Double Side Cooling  High Surge Capability VRRM IF(AV) IFSM 6500V 5150A 82500A VOLTAGE RATINGS Part and Ordering Number DRD5150H65 DRD5150H62 DRD5150H58 DRD5150H54

xb15a308

Abstract: 1E01 HIGH POWER ANTENNA SWITCH PIN DIODE r065
Contextual Info: PIN DIODE ◆High Power Handling •Applications ◆Small Capacitance at Zero Bias, Extremely ●High Power Antenna Switch 10W output two-way radio Small Reverse Bias ◆Small Series Order Resistance ◆Small Insertion Loss, High Isolation ◆Extremely Small Wave Distortion

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

Contextual Info: A Business Partner of Renesas Electronics Corporation. PS2801C-1, PS2801C-4 HIGH ISOLATION VOLTAGE SSOP PHOTOCOUPLER Data Sheet R08DS0072EJ0400 Rev.4.00 Jan 9, 2013 DESCRIPTION These products are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon

GPDR4460

Abstract: GPDR4460T001
Contextual Info: Green Power Solutions srl Via Greto di Cornigliano 6R - 16152 Genova , Italy Phone: +39-010-659 1869 Fax: +39-010-659 1870 Web: www.gpsemi.it E-mail: info@gpsemi.it GPDR4460 RECTIFIER DIODE PRELIMINARY VOLTAGE UP TO 4000 V AVERAGE CURRENT 4600 A SURGE CURRENT

PMD9010D

Abstract: tsop6 marking 312
Contextual Info: PMD9010D MOSFET driver Rev. 01 — 20 November 2006 Product data sheet 1. Product profile 1.1 General description Two NPN transistors and high-speed switching diode connected in totem pole configuration in a small SOT457 SC-74 Surface-Mounted Device (SMD) plastic

RLT1060-10MG

Abstract: laserdiode
Contextual Info: ROITHNER LASERTECHNIK SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 office@roithner-laser.com www.roithner-laser.com RLT1060-10MG TECHNICAL DATA Infrared Laser Diode NOTE! Structure: double heterostructure Lasing wavelength: 1063 nm typ.