DIODE 100A 1000V Search Results

H100

Abstract: Power Diode 1000V APT2X101DQ100J Power Diode 1000V 100A
Contextual Info: 2 1 3 4 2 1 Anti-Parallel APT2x100DQ100J 3 4 2 1 3 4 S Parallel APT2x101DQ100J OT 22 7 "UL Recognized" ISOTOP ® file # E145592 APT2x101DQ100J 1000V 100A APT2x100DQ100J 1000V 100A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS

URU100120

Contextual Info: RURU100120 Semiconductor 100A, 1200V U ltrafast Diode April 1995 Package Features • U Itrafast with Soft Recovery. <125ns JEDEC STYLE SINGLE LEAD TO-218 • Operating Temperature. +175°C

APT0502

Abstract: APTDF100H100G
Contextual Info: APTDF100H100G Diode Full Bridge Power Module VRRM = 1000V IC = 100A @ Tc = 70°C Application + AC1 • • • • AC2 Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Features • • • • • • - Ultra fast recovery times

URU100120

Abstract: tic 122 RURU100120
Contextual Info: RURU100120 S E M I C O N D U C T O R 100A, 1200V Ultrafast Diode April 1945 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . <125ns JEDEC STYLE SINGLE LEAD TO-218 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C

Contextual Info: Bulletin I2153 rev. D 12/02 QUIETIR Series 85EPF.HV FAST SOFT RECOVERY RECTIFIER DIODE IF RMS = 160A VF < 1.4V @ 100A trr = 95ns VRRM 800 to 1200V Description/ Features Major Ratings and Characteristics Characteristics IF(AV) Rect. Conduction 50% duty Cycle

85EPF

Abstract: 85EPF08 85EPF10 85EPF12 I2153 D1202
Contextual Info: Bulletin I2153 rev. D 12/02 QUIETIR Series 85EPF.HV FAST SOFT RECOVERY RECTIFIER DIODE IF RMS = 160A VF < 1.4V @ 100A trr = 95ns VRRM 800 to 1200V Description/ Features Major Ratings and Characteristics Characteristics IF(AV) Rect. Conduction 50% duty Cycle

APT2X100D100J

Abstract: APT2X101D100J H100
Contextual Info: 2 1 3 4 2 1 Anti-Parallel APT2X100D100J 3 4 2 1 3 4 Parallel APT2X101D100J 7 22 TO S "UL Recognized" ISOTOP ® APT2X101D100J APT2X100D100J 1000V 1000V 95A 95A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES

apt15d100k

Contextual Info: 1 2 TO -22 1 - Cathode 2 - Anode Back of Case - Cathode APT15D100K 1 1000V 15A 2 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics

URG15100C

Abstract: urg15100 RURG15100CC
Contextual Info: RURG15100CC Data Sheet January 2000 File Number 2933.3 15A, 1000V Ultrafast Dual Diode Features The RURG15100CC is an ultrafast dual diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction.

Contextual Info: APTM100U13S Single switch Series & parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 130m max @ Tj = 25°C ID = 65A @ Tc = 25°C Application • • • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Features • • • Power MOS V MOSFETs

Contextual Info: A P T 10 0 1 R B V F R ADVANCED W 7Æ P o w e r T e c h n o lo g y 1000v POWER MOS V i 11 a -i.ooon FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

Contextual Info: D e57W GÜQ2mb T3Q A d v a n c ed P o w er Te c h n o l o g y 1 - Cathode 2 - Anode Back of Case - Cathode APT15D100K 1000V 15A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE I PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply

URG30100C

Abstract: RURG30100CC URG30100
Contextual Info: RURG30100CC Data Sheet Title UR 010 C bt A, 00V rafa Dual ode) utho eyrds A, 00V rafa Dual ode, errpoon, minctor, ache ergy ted, itch wer pes, wer itch January 2000 File Number 2935.3 30A, 1000V Ultrafast Dual Diode Features The RURG30100CC is an ultrafast dual diode with soft

URH30100C

Abstract: RURH30100CC 1225AL diode 1000V 100a
Contextual Info: RURH30100CC Data Sheet Title UR 010 C bt A, 00V rafa Dual ode) utho eyrds A, 00V rafa Dual ode, errpoon, minctor, ache ergy ted, itch wer pes, wer January 2000 File Number 2932.3 30A, 1000V Ultrafast Dual Diode Features The RURH30100CC is an ultrafast dual diode with soft

RURH15100CC

Abstract: URH15100C
Contextual Info: RURH15100CC Data Sheet Title UR 510 C bt A, 00V rafa Dual ode) utho eyrds A, 00V rafa Dual ode, errpoon, minctor, ache ergy ted, itch wer pes, wer itch January 2000 File Number 2934.3 15A, 1000V Ultrafast Dual Diode Features The RURH15100CC is an ultrafast dual diode with soft

APT10086BVFR

Contextual Info: APT10086BVFR 1000V POWER MOS V 13A 0.860Ω Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT1001R1BVFR 1000V POWER MOS V 11A 1.100Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

RURG30100

Abstract: TA09904
Contextual Info: RURG30100 Data Sheet January 2000 File Number 3213.2 30A, 1000V Ultrafast Diode Features The RURG30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

Contextual Info: APT10030L2VFR 1000V 33A 0.300W POWER MOS V FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT10050JVFR 19A 0.500Ω 1000V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

ultrasonic generator 40khz

Abstract: GATE ASSISTED TURN-OFF THYRISTORS ultrasonic generator 1200 w 40khz 40KHZ ULTRASONIC asymmetric thyristor asymmetric thyristor datasheet DF451 TA329 RC snubber diode TA32910Q
Contextual Info: TA329.Q TA329.Q Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4680-2.1 DS4680-3.0 January 2000 KEY PARAMETERS VDRM 1400V IT RMS 370A ITSM 2000A dVdt 1000V/µs dI/dt 1000A/µs tq 7.0µs APPLICATIONS • High Frequency Applications

Contextual Info: APT10035JFLL 1000V POWER MOS 7TM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel

Contextual Info: APT10050LVFR A dvanced P o w er Te c h n o l o g y 1000V POWER MOSV 21A 0.500Í2 iFREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

fast diode SOT-227

Contextual Info: APT10021JFLL 1000V 37A 0.210W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package