DIODE 1000 A Search Results

ixys dsei 2x30

Abstract: DSEI IXYS 2x31 IXYS DSEI 2 DSEI 20-01 A
Contextual Info: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 1000 1000 IFAVM = 2x30 A VRRM = 1000 V trr = 35 ns Type DSEI 2x 30-10P DSEI 2x 31-10P 2x30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM

Contextual Info: P 1000 A.P 1000 S power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 0, Axial lead diode Standard silicon rectifier diodes P 1000 A.P 1000 S ;  =  4

dsei 2x60

Abstract: IXYS DSEI 2X61 IXYS DSEI 2 ixys dsei IXYS DSEI 2X
Contextual Info: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 IFAVM = 2x60 A VRRM = 1000 V trr = 35 ns Type DSEI 2x 61-10P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM

17n100a

Abstract: NC2030 17N100AU1
Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

10N100U1

Abstract: N100A ixgh 1500
Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ

Contextual Info: PIN Diode based Variable Attenuator 50 - 1000 MHz AT10-0019 AT10-0019 PIN Diode based Variable Attenuator 50 - 1000 MHz Features • • • • • • SOW-16 High Dynamic Range: 42dB Typical Flat Attenuation vs. Frequency High P1dB Compression Operates on a Single +5V Supply:

P1000S

Abstract: P1000 P1000J P1000K diode rectifier p 600
Contextual Info: P 1000 A.P 1000 S Type Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage IF = - A IR = - A IRR = - A Axial lead diode Standard silicon rectifier diodes P 1000 A.P 1000 S Forward Current: 10 A Reverse Voltage: 50 to 1200 V

Contextual Info: VRSM VRRM dv/dt cr ITRMS (maximum values for continuous operation) VDRM 195 A SEMIPACK 2 Thyristor / Diode Modules ITAV (sin. 180; Tcase = 85 °C) V V V/µs 900 1300 1500 1700 1900 800 1200 1400 1600 1800 500 1000 1000 1000 1000 SKKT 122 SKKH 122 128 A

Contextual Info: □ IXYS Low VCE sal IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 V CES ^C25 V CE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions vw CES T, = 25°C to 150°C 1000 V V CGR Tj = 25°C to 150°C; RaE = 1 M£2

Contextual Info: RURG80100 November 2013 Data Sheet 80 A, 1000 V, Ultrafast Diode Features • Ultrafast Recovery trr = 200 ns @ IF = 80 A • Max Forward Voltage, VF = 1.9 V (@ TC = 25°C) Description • 1000 V Reverse Voltage and High Reliability The RURG80100 is an ultrafast diode with low forward

30-10AR

Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI 30 VRSM A 1000 1000 Type C ISOPLUS 247TM TO-247 AD Version A Version AR V 1000 1000 DSEI 30-10A DSEI 30-10AR C C A A C (TAB) A = Anode, C = Cathode Symbol Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM

ixys dsei 2x61

Abstract: DSEI 2X61-10B ixys dsei 2*61-10b
Contextual Info: Fast Recovery Epitaxial Diodes FRED VRSM V 1000 VRRM DSEI 2x61 IFAVM = 2x60 A VRRM = 1000 V = 35 ns trr miniBLOC, SOT-227 B Type V 1000 DSEI 2x61-10B Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5

Contextual Info: Fast Recovery Epitaxial Diodes FRED DSEI 2x61 IFAVM = 2x60 A vRRM= 1000 v trr — v RSM Type V rrm V V 1000 1000 Symbol 1 > miniBLOC, SOT-227 B 1 DSEI 2x61-10B Test Conditions Maximum Ratings (per diode) 'frm "^vj “ Tvjm Tc= 50°C; rectangular, d = 0.5

Diode 1N4007 DO-7 Rectifier Diode

Abstract: 1N40075 BYX/400 1N4007 RECTIFIER DIODE 4007 uf 1200 BAX12 BYW52 BYW53 BYW54 BYW55
Contextual Info: Diodes Rectifier and Avalanche diodes Type BY 202 BY 203 BY 204 Maximum ratings Notes Characteristics V 4 8006 90 <300 £ 1 .0 200 £ 507) Contact protection diode 2 5 1000') 200 £100 £ 1 .2 1000 £ 3503) Fast rectifier diodes 3 5 1000') 300 £100 <1.2

RF mixer 433 Mhz

Contextual Info: SMJ 1000-13A The Communications Edge TM Preliminary Product Information Quad-Diode Mixer Product Features • • • • • Functional Diagram Input IP3 +19 dBm RF Freq 5 - 1000 MHz LO Freq 5 - 1000 MHz IF Freq DC - 1000 MHz LO Drive Level +13 dBm 6 5 4

Contextual Info: SMJ 1000-17A The Communications Edge TM Preliminary Product Information Quad-Diode Mixer Product Features • • • • • Functional Diagram Input IP3 +21 dBm RF Freq 5 - 1000 MHz LO Freq 5 - 1000 MHz IF Freq DC - 1000 MHz LO Drive Level +17 dBm 6 5 4

5726

Abstract: diode s 360 diode full wave rectifier 6 v diode rs tube MF300
Contextual Info: 5726 S.Q. DOUBLE DIODE Special quality double diode designed for use as detector or low-current power rectifier. QUICK REFERENCE DATA Life test Mechanical quality Base Heating Heater voltage Heater current Diode current Inverse peak voltage 1000 hours Shock and vibration resistant

2x31-10b

Abstract: ixys dsei 2x31-10b
Contextual Info: DSEI 2x30-10P IFAVM = 2x30 A VRRM = 1000 V trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 Type DSEI 2x 30-10P Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM

Contextual Info: SMJ 1000-7A The Communications Edge TM Preliminary Product Information Quad-Diode Mixer Product Features • • • • • Functional Diagram Input IP3 +13 dBm RF Freq 5 - 1000 MHz LO Freq 5 - 1000 MHz IF Freq DC - 1000 MHz LO Drive Level +7 dBm 6 5 4 1

ixys dsei 12-10a

Abstract: 24A12 IXYS 12-10A diode 6A 1000v
Contextual Info: DSEI 12-10A Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 IFAV = 12 A VRRM = 1000 V trr = 50 s Type A C TO-220 AC C  A DSEI 12-10A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5

Contextual Info: Preliminary data Low VCE sat High speed IGBT with Diode VCES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V IC25 VCE(sat) 50 A 50 A 3.5 V 4.0 V TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

opto transistor moc

Abstract: infrared switch SLOTTED reflective optologic reflective opto switch dust detector TO46 package diode t13 Opto Diode
Contextual Info: Optoelectronics Products Infrared Packaging and Ordering Information Packaging Options Package* Bag Quantity Tube (Quantity) Tape on Ammopack Tape on Reel PLCC-2 Detector 1000 • PLCC-2 Diode 1000 ■ Reflective Arrowhead with Dust Cover 50 Reflective Arrowhead with Dust Cover, Wires

diode wj

Contextual Info: SMJ 1000-7A The Communications Edge TM Quad-Diode Mixer Product Features • • • • • Functional Diagram Input IP3 +13 dBm RF Freq 5 - 1000 MHz LO Freq 5 - 1000 MHz IF Freq DC - 1000 MHz LO Drive Level +7 dBm 6 5 4 1 2 3 Function Ground IF RF Ground

25N100

Abstract: IXGH25N100AU1 IXGH25N100U1 25N100U
Contextual Info: Preliminary data Low VCE sat High speed IGBT with Diode VCES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V IC25 VCE(sat) 50 A 50 A 3.5 V 4.0 V TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ