DIODE 05 38 Search Results

BAP64-05

Abstract: BP317 SMD MARKING CODE 5kp
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BAP64-05 Silicon PIN diode Preliminary specification 1999 Jun 16 Philips Semiconductors Preliminary specification Silicon PIN diode BAP64-05 PINNING FEATURES • High voltage, current controlled PIN DESCRIPTION

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 BAP65-05 Silicon PIN diode Product specification 2001 May 07 Philips Semiconductors Product specification Silicon PIN diode BAP65-05 FEATURES PINNING • Two elements in common cathode configuration PIN

smd diode code ok 96

Abstract: A2 DIODE SMD CODE MARKING marking code 10 sot23 philips 23 SMD MARKING CODE s4 BP317 BAP63-05 marking 5BX
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BAP63-05 Silicon PIN diode Objective specification 2000 Feb 17 Philips Semiconductors Objective specification Silicon PIN diode BAP63-05 PINNING FEATURES • High speed switching for RF signals PIN DESCRIPTION

Contextual Info: TVS Diode Transient Voltage Suppressor Diodes ESD24VL1B Series Low Capacitance Bi-directional ESD / Transient Protection Diode ESD24VL1B-02LS ESD24VL1B-02LRH Data Sheet Revision 1.1, 2012-05-04 Final Power Management & Multimarket Edition 2012-05-04 Published by

BAP64-05

Contextual Info: DISCRETE SEMICONDUCTORS Æm SIHIEET BAP64-05 Silicon PIN-diode Objective specification Philips Sem iconductors 1998 Dec 04 PHILIPS Philips Semiconductors Objective specification Silicon PIN-diode BAP64-05 PINNING FEATURES • High voltage, curre n t controlled.

Infineon X-GOLD 110

Abstract: X-GOLD 110 nfc antenna ESD24VL1B02L murata nfc antenna ESD24VL1B-02LRH xgold ESD24VL1B-02LS
Contextual Info: TVS Diode Transient Voltage Suppressor Diodes ESD24VL1B Series Low Capacitance Bi-directional ESD / Transient Protection Diode ESD24VL1B-02LS ESD24VL1B-02LRH Data Sheet Revision 1.1, 2012-05-04 Final Power Management & Multimarket Edition 2012-05-04 Published by

BAP64-05

Abstract: MCD772
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BAP64-05 Silicon PIN diode Product specification Supersedes data of 1999 Jul 01 1999 Aug 19 Philips Semiconductors Product specification Silicon PIN diode BAP64-05 FEATURES PINNING • High voltage, current controlled

Contextual Info: BBY66-05 3 Silicon Tuning Diode
High capacitance ratio
High Q hyperabrupt tuning diode 2
Designed for low tuning voltage operation for VCO's in mobile communications equipment 1
Very low capacitance spread Type BBY66-05 VPS05161 Marking Pin Configuration

BAP50-05

Abstract: DIODE 61 BP
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D088 BAP50-05 General purpose PIN diode Product specification Supersedes data of 1999 Feb 01 1999 May 10 Philips Semiconductors Product specification General purpose PIN diode BAP50-05 PINNING FEATURES • Two elements in common cathode configuration in a

BBY66-05

Contextual Info: BBY66-05 3 Silicon Tuning Diode
High capacitance ratio
High Q hyperabrupt tuning diode 2
Designed for low tuning voltage operation for VCO' s in mobile communications equipment 1
Very low capacitance spread Type BBY66-05 Marking OBs Pin Configuration

Contextual Info: BBY 66-05 3 Silicon Tuning Diode Preliminary data
High capacitance ratio
High Q hyperabrupt tuning diode 2
Designed for low tuning voltage operation for VCO' s in mobile communications equipment 1
Very low capacitance spread Type Marking BBY 66-05

ESD200-B1-CSP0201

Abstract: OmniVision m
Contextual Info: TVS Diode Transient Voltage Suppressor Diodes ESD200-B1-CSP0201 Low Clamping Voltage TVS Diode in a Thin 0201 Chip Scale Package ESD200-B1-CSP0201 Data Sheet Revision 1.0, 2013-05-21 Final Power Management & Multimarket Edition 2013-05-21 Published by Infineon Technologies AG

BAS70 dip

Abstract: 100OHM 125OC BAS70 BAS70-04 BAS70-05 smd diode green BAND
Contextual Info: Formosa MS SMD Schottky Barrier Diode BAS70 / 04 / 05 / 06 List List. 1 Package outline. 2

k45 diode

Abstract: diode k44 transistor k43 marking k43 diode diode marking 45 diode MARKING A0 BAS40W BAS40W-04 BAS40W-05 BAS40W-06
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE BAS40W SERIES SOT-323 SCHOTTKY DIODE 1. BASE 2. EMITTER FEATURES 3. COLLECTOR 1. 01 REF 1. 25¡ À0. 05 Power dissipation mW Tamb=25℃ 2. 30¡ À0. 05 1. 30¡ À0. 03 Collector current

SOT-323

Contextual Info: Formosa MS BAS70W / BAS70W-04 / BAS70W-05 / BAS70W-06 SMD Small Signal Schottky Diode List List. 1 Package outline. 2

Marking k45

Abstract: FBAS40DW-05 k45 diode diode k45
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40DW-05 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40DW-05 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES

SOT-23

Abstract: BAS40-04
Contextual Info: Formosa MS BAS40 / BAS40-04 / BAS40-05 / BAS40-06 SMD Small Signal Schottky Diode List List. 1 Package outline. 2

Contextual Info: Formosa MS BAS40 / BAS40-04 / BAS40-05 / BAS40-06 SMD Small Signal Schottky Diode List List. 1 Package outline. 2

1PS76SB21

Abstract: lem 811
Contextual Info: DISCRETE SEMICONDUCTORS [Mm SMEET 1PS76SB21 Schottky barrier diode 1999 May 05 Product specification Supersedes data of 1998 Jul 16 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS76SB21 FEATURES

Marking k45

Abstract: transistor k44 k45 diode transistor k43 k44 transistor transistor k46 BAS40W BAS40W-04 BAS40W-05 BAS40W-06
Contextual Info: BAS40W SERIES SOT-323 SCHOTTKY DIODE FEATURES 1. 01 REF 1. 25¡ À0. 05 Power dissipation mW Tamb=25℃ 1. 30¡ À0. 03 Collector current 200 mA IF: Collector-base voltage 40 V VR: Operating and storage junction temperature range 2. 00¡ À0. 05 2. 30¡ À0. 05

infineon x-gold

Abstract: PG-TSSLP-2-17 ESD0P2RF-02LRH X-GOLD 116 xgold
Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD0P2RF Series Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD0P2RF-02LS ESD0P2RF-02LRH Data Sheet Revision 1.0, 2011-05-19 Final Industrial and Multi-Market Edition 2011-05-19 Published by

BAV23S l31

Abstract: diode 1407
Contextual Info: DISCRETE SEMICONDUCTORS BAV23S General purpose double diode Product specification Supersedes data of 1998 Jan 08 Philips Semiconductors 1999 May 05 PHILIPS PHILIPS Philips Semiconductors Product specification General purpose double diode BAV23S FEATURES DESCRIPTION

BAS270

Abstract: BP317 BAS27
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D154 BAS270 Schottky barrier diode Product specification 2001 Feb 05 Philips Semiconductors Product specification Schottky barrier diode BAS270 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated guard ring for stress protection.