DIODE 0450 Search Results

eiaj-c3

Abstract: EIAJC3 40khz Ultrasonic distance diagram GM5BW01300A IR sensor for 40khz
Contextual Info: _ _ R U A D D SPEC. No. DG-045008 Î35ÜE May-20-04 CONPOUND SEMICONDUCTOR DEVICES D IM ^ference ELECTRONIC COMPONENTS GROUP SHARP CORPORATION Technical literature DEVICE SPECIFICATION FOR LIGHT EMITTING DIODE MODEL No. ' GM5BW01300A Specified for CUSTOMERS’ APPROVAL

VS-20UT04

Contextual Info: VS-20UT04, VS-20WT04FN www.vishay.com Vishay Semiconductors High Performance Schottky Generation 5.0, 20 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop I-PAK TO-251AA D-PAK (TO-252AA) Base cathode 4, 2 Base cathode

VS-20UT04

Contextual Info: VS-20UT04, VS-20WT04FN www.vishay.com Vishay Semiconductors High Performance Schottky Generation 5.0, 20 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop I-PAK TO-251AA D-PAK (TO-252AA) Base cathode 4, 2 Base cathode

VS-20UT04

Contextual Info: VS-20UT04, VS-20WT04FN www.vishay.com Vishay Semiconductors High Performance Schottky Generation 5.0, 20 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop I-PAK TO-251AA D-PAK (TO-252AA) Base cathode 4, 2 Base cathode

Contextual Info: 20UT04, 20WT04FN Vishay High Power Products High Performance Schottky Generation 5.0, 20 A 20UT04 FEATURES 20WT04FN • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency

20WT04FN

Contextual Info: 20UT04, 20WT04FN Vishay High Power Products High Performance Schottky Generation 5.0, 20 A 20UT04 FEATURES 20WT04FN • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency

Contextual Info: 20UT04, 20WT04FN Vishay High Power Products High Performance Schottky Generation 5.0, 20 A 20UT04 FEATURES 20WT04FN • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency

VS-20WT04FN

Abstract: VS-20UT04
Contextual Info: VS-20UT04, VS-20WT04FN Vishay Semiconductors High Performance Schottky Generation 5.0, 20 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop I-PAK TO-251AA D-PAK (TO-252AA) Base cathode 4, 2 Base cathode 4, 2 • Extremely low reverse leakage

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

VS-20UT04

Contextual Info: VS-20UT04, VS-20WT04FN Vishay Semiconductors High Performance Schottky Generation 5.0, 20 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop I-PAK TO-251AA D-PAK (TO-252AA) Base cathode 4, 2 Base cathode 4, 2 • Extremely low reverse leakage

VS-20UT04

Abstract: VS-20WT04FN
Contextual Info: VS-20UT04, VS-20WT04FN Vishay Semiconductors High Performance Schottky Generation 5.0, 20 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop I-PAK TO-251AA D-PAK (TO-252AA) Base cathode 4, 2 Base cathode 4, 2 • Extremely low reverse leakage

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

Resistor MSB 124

Abstract: RK738 RK 0313 asea resistor 5245 Resistor MSB 54 RRMH ASEA Rod Resistors asea pin terminal asea time-lag relay RI RRMH
Contextual Info: Catalogue RK 7 8 -2 E RELAY COM PONENTS STUD-TYPE RTLF stud-type diode, p. 1 RTNK sho rt-circuitin g com p orten , p. 2 MRB, MSB stud-type resistors, pages 2, 3 MSTA, MSTB therm istors, p. 4 Accessories, p. 5 Plug-in type relay com ponents, oil-fille d capa­

bipolar transistor ghz s-parameter

Abstract: 1565E HBFP-0450 LL2012-F 5e19 bipolar transistor s-parameter COND10
Contextual Info: 1800 MHz Medium Power Amplifier using the HBFP-0450 Silicon Bipolar Transistor Application Note 1168 Introduction HBFP-0450 Medium Power Amplifier Design Avago Technologies’ HBFP-0450 is a high performance, medium power Isolated Collector transistor housed in

HBFP-0450

Abstract: 35-689 HBFP-0450-BLK CMP10 CMP12 55 ic Sot-343 HBFP0450TR1
Contextual Info: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High Performance, Medium Power, and Low Noise Applications 4-lead SC-70 SOT-343 Surface Mount Plastic Package • Typical Performance at 1.8 GHz

BJT BF 167

Abstract: kf 203 e 011 transistor HBFP0450TR1 L 3705
Contextual Info: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High Performance, Medium Power, and Low Noise Applications 4-lead SC-70 SOT-343 Surface Mount Plastic Package • Typical Performance at 1.8 GHz

Contextual Info: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High Performance, Medium Power, and Low Noise Applications 4-lead SC-70 SOT-343 Surface Mount Plastic Package • Typical Performance at 1.8 GHz

Contextual Info: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High Performance, Medium Power, and Low Noise Applications 4-lead SC-70 SOT-343 Surface Mount Plastic Package • Typical Performance at 1.8 GHz

Contextual Info: That H EW LETT WL'EM P A C K A R D High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High P erform ance, M edium Pow er, and Low N oise A p p lications 4-lead SC-70 SOT-343 Surface Mount Plastic

100NS

Abstract: 25NS "Digital Delay Line" 0450-0100-02
Contextual Info: bel/ defining a degree of excellence DIGITAL DELAY LINE SERIES 0450 CMOS DELAY MODULE 5 TAP TECHNICAL INFORMATION TEST CONDITIONS Pulse Voltage Rise Time Pulse Width Pulse Period Supply Current, Ic c l 5.0 Volts 6.0 Nsec 10°/o-90°/o 1.2 x Total Delay 4 x Pulse Width

Contextual Info: bel/ defining a degree of excellence DIGITAL DELAY LINE SERIES 0450 CMOS DELAY MODULE 5 TAP TECHNICAL INFORMATION TEST CONDITIONS Pulse Voltage Rise Time Pulse Width Pulse Period Supply Current, Ic c l 5.0 Volts 6.0 Nsec 10°/o-90°/o 1.2 X Total Delay 4 X Pulse Width

Contextual Info: bel/ defining a degree of excellence DIGITAL DELAY LINE SERIES 0450 CMOS DELAY MODULE 5 TAP TECHNICAL INFORMATION TEST CONDITIONS Pulse Voltage Rise Time Pulse Width Pulse Period Supply Current, Ic c l 5.0 Vblts 6.0 Nsec 10°/o-90°/o 1.2 X Total Delay 4 X Pulse Width

MAX971

Abstract: MAX983 MAX981 MAX973 MAX974 MAX984 9814 transistor MAX9721 MAX983ESA max973epa
Contextual Info: 19-0450; Rev 3; 2/03 Ultra-Low-Power, Open-Drain, Single/Dual-Supply Comparators The MAX971–MAX974 and MAX981–MAX984 single/ dual/quad low-voltage comparators feature the lowest power consumption available. These micropower devices draw less than 4µA supply current over

9814 transistor

Contextual Info: 19-0450; Rev 3; 2/03 Ultra-Low-Power, Open-Drain, Single/Dual-Supply Comparators The MAX971–MAX974 and MAX981–MAX984 single/ dual/quad low-voltage comparators feature the lowest power consumption available. These micropower devices draw less than 4µA supply current over