DIODE 0.2 V 1A Search Results

B5817WS

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5817WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES Power dissipation PCM: 0.2 W Tamb=25℃ Collector current IF: 1 A Collector voltage VR: 20 V Operating and storage junction temperature range

B5819WS

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5819WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES Power dissipation PCM: 0.2 W Tamb=25℃ Collector current IF: 1 A Collector voltage VR: 40 V Operating and storage junction temperature range

Schottky Diode 30V 1A SOD

Abstract: diode SOD-323 B5818WS
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5818WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES Power dissipation PCM: 0.2 W Tamb=25℃ Collector current IF: 1 A Collector voltage VR: 30 V Operating and storage junction temperature range

2SD2428

Abstract: TF02
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE U nit in nun COLOR TV HORIZONTAL OUTPUT APPLICATIONS. • • • High Voltage : V c b O -^O O V High Speed Switching : tf=0.2/as Typ. (Icp = 6A, lBl(end) = 1-2A) Built-in Damper Diode. ^e t-ll n r t V. f P "S in

16FL2CZ

Contextual Info: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED 16(D, F)L2CZ47A Unit in SWITCHING MODE POWER SUPPLY APPLICATION. 10.3 MAX CONVERTER & CHOPPER APPLICATION. • Repetitive Peak Reverse Voltage - 03.2 ± 0.2 - : V r r m =200, 300V • Average Output Rectified Current : Io=16A

Contextual Info: BYV26A . BYV26E 1 Amp. Very Fast Recovery Glass Passivated Avalanche Diode DO-41 Plastic Current 1.0 A at 55 °C Voltage 200 to 1000 V ø0.8 ±0.05 ø2.6 ±0.1 Dimensions in mm. R +0.2 -0 5 ±0.5 58.5 Mounting instructions 1. Min. distance from body to soldering point,

DFG1A2

Contextual Info: 4496205 H H A C H I / O P T O E L E U I R U N I C S > ^68C 09828 • ütjjÈ M & -f =t— K (F a st R e c o v e ry Diode DFGTA T ñ 29MIN. (1.14) DE I M4 ^ ^ 2 0 5 DOma^fl 1 D 7 "-¿ > 3 ‘ / 3 JL V R R M : 200V— 800V >F(AV): 1 0 A trr : 0.2/*s 5MAX.

Contextual Info: S EM IC O N D U C T O R KDS165T TECHNI CAL DATA SI LI CON EPI TAXI AL PLANAR DIODE ULTRA HIGH SPEED SW ITC H IN G A PPLICATION. FEA T U RE S • L ow Forw ard V oltage. • Fast R everse R ecovery T im e. • Sm all T otal C apacitance. DIM A 2.9± 0.2 n B

300108J

Abstract: ACV11012 ACV12012 ACV12212 ACV13012 ACV31012 ACV32012 ACV33012
Contextual Info: CV ACV AUTOMOTIVE LOW PROFILE MICRO-ISO/MICRO-280 RELAY mm inch 15 .591 22.5 .886 Micro ISO 1c type Micro ISO 1a type 15 .591 22.5 .886 15.7 .618 Micro 280 plug-in type FEATURES • Low profile: 22.5 mm(L)x15 mm(W)×15.7 mm(H) .886 inch(L)×.591 inch(W)×.618 inch(H)

Contextual Info: BSP 296 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 Pin 3 D Type VDS ID RDS(on) Package Marking BSP 296 100 V 1A 0.8 Ω SOT-223 BSP 296 Type BSP 296 Ordering Code Q67000-S067

BAS3010A-03W

Abstract: marking AF BAR63-03W
Contextual Info: BAS3010A. Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage typ. 0.41V @ I F = 1A • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package 1)

E6327

Abstract: Q67000-S067
Contextual Info: BSP 296 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 296 100 V 1A 0.8 Ω SOT-223 BSP 296 Type BSP 296 Ordering Code Q67000-S067

RG 702 Diode

Abstract: 100C 1A 300V mosfet MOSFET 600V 1A 0232w
Contextual Info: SID01L60 1A, 600V,RDS ON 12Ω N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente Description TO-251 2.3±0.1 6.6±0.2 5.3±0.2 The SID01L60 (through-hole version) is universally preferred for all commercial-industrial surface mount applications and

Contextual Info: SHINDENGEN Bridge Diode OUTLINE DIMENSIONS D1UB80 Case : 1Z: 1U Case Unit : mm 800V 1A RATINGS ●Absolute Maximum Ratings If not specified Tc=25℃ Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage

125OC

Abstract: XB01SB04A2BR diode 0.2 V 1A
Contextual Info: XB01SB04A2BR Schottky Barrier Diode 1A, 40V Type ! ! ! ! September 29, 2003 Ver. 4 ! APPLICATIONS " Rectification of compact DC/DC converter " Surge absorption caused by counter force of compact motors " Energy-saving for notebook PCs, hand-set " Protection against reverse connection of battery

AP6924GEY

Contextual Info: AP6924GEY Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL MOSFET WITH SCHOTTKY DIODE K ▼ Low On-Resistance S ▼ Fast Switching Characteristic D ▼ Included Schottky Diode G 20V RDS ON 600mΩ ID A SOT-26 BVDSS A 1A Description The Advanced Power MOSFETs from APEC provide the

Contextual Info: AP6924GEY RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL MOSFET WITH SCHOTTKY DIODE K Low On-Resistance BVDSS S Fast Switching Characteristic RDS ON D Included Schottky Diode G 600m ID A SOT-26 20V A 1A Description The Advanced Power MOSFETs from APEC provide the

diode 600m

Abstract: AP6924GEY
Contextual Info: AP6924GEY Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL MOSFET WITH SCHOTTKY DIODE K ▼ Low On-Resistance S ▼ Fast Switching Characteristic D ▼ Included Schottky Diode 20V RDS ON 600mΩ ID A G A SOT-26 BVDSS 1A Description The Advanced Power MOSFETs from APEC provide the

Contextual Info: BA41W12SAT Regulator ICs Dual output voltage regulator with power saving BA41W12SAT The BA41W12SAT is a general-purpose power supply with outputs : 8V, 1A and 5V, 500mA. The IC is available in a compact TO220FP-5 package. The outputs can be turned off during the power saving state with a built-in switch. Also

S1VBA60

Abstract: bridge s1vba60 S1VB-A60
Contextual Info: シングルインライン型 ブリッジダイオード Single In-line Package Bridge Diode •外形寸法図 OUTLINE DIMENSIONS Unit : mm Weight：1.1g（typ.） Package：1V S1VBA□ 3.4±0.2 15.6±0.3 600V 1A クラス（例） Class 品名 Type No.

diodes STmicroelectronics marking T01

Abstract: STTA106 STTA106U STTA106RL stta106s
Contextual Info: STTA106/U TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 600V trr (typ) 20ns VF (max) 1.5V FEATURES AND BENEFITS • ■ ■ ■ SPECIFIC TO FREEWHEEL MODE OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY

AX057

Contextual Info: SHINDENGEN Schottky Rectifiers SBD D1NS6 Single OUTLINE DIMENSIONS Case : AX057 Unit : mm 60V 1A FEATURES ● Tj150℃ ● PRRSM avalanche guaranteed ● 5 mm pitch mounting applicable APPLICATION *Taping Code No.4000:20MIN No.4060:27MIN No.4070:15MIN ● Switching power supply

D1NS4 diode

Abstract: D1NS4
Contextual Info: SHINDENGEN Schottky Rectifiers SBD D1NS4 Single OUTLINE DIMENSIONS 40V 1A Unit : mm FEATURES Tj150 PRRSM avalanche guaranteed 5 mm pitch mounting applicable APPLICATION Switching power supply DC/DC converter Home Appliances, Office Equipment Telecommunication

STTA106

Abstract: STTA106U mosfet morocco diodes STmicroelectronics marking T01 TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE F126 smb marking stmicroelectronics STTA106RL
Contextual Info: STTA106/U TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 600V trr (typ) 20ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO FREEWHEEL MODE OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN