DIODE 0.2 V 1A Search Results

B5817WS

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5817WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES Power dissipation PCM: 0.2 W Tamb=25℃ Collector current IF: 1 A Collector voltage VR: 20 V Operating and storage junction temperature range

B5819WS

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5819WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES Power dissipation PCM: 0.2 W Tamb=25℃ Collector current IF: 1 A Collector voltage VR: 40 V Operating and storage junction temperature range

Schottky Diode 30V 1A SOD

Abstract: diode SOD-323 B5818WS
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5818WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES Power dissipation PCM: 0.2 W Tamb=25℃ Collector current IF: 1 A Collector voltage VR: 30 V Operating and storage junction temperature range

2SD2428

Abstract: TF02
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE U nit in nun COLOR TV HORIZONTAL OUTPUT APPLICATIONS. • • • High Voltage : V c b O -^O O V High Speed Switching : tf=0.2/as Typ. (Icp = 6A, lBl(end) = 1-2A) Built-in Damper Diode. ^e t-ll n r t V. f P "S in

16FL2CZ

Contextual Info: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED 16(D, F)L2CZ47A Unit in SWITCHING MODE POWER SUPPLY APPLICATION. 10.3 MAX CONVERTER & CHOPPER APPLICATION. • Repetitive Peak Reverse Voltage - 03.2 ± 0.2 - : V r r m =200, 300V • Average Output Rectified Current : Io=16A

20JL2C41A

Abstract: 20JL2C
Contextual Info: TO SHIBA 20JL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20JL2C41A SWITCHING TYPE PO W ER SUPPLY APPLICATION Unit in mm 03.2 + 0.2 / • Repetitive Peak Reverse Voltage V r r m • Average Output Rectified Current I 0 = 2 0A •

Contextual Info: BYV26A . BYV26E 1 Amp. Very Fast Recovery Glass Passivated Avalanche Diode DO-41 Plastic Current 1.0 A at 55 °C Voltage 200 to 1000 V ø0.8 ±0.05 ø2.6 ±0.1 Dimensions in mm. R +0.2 -0 5 ±0.5 58.5 Mounting instructions 1. Min. distance from body to soldering point,

DFG1A2

Contextual Info: 4496205 H H A C H I / O P T O E L E U I R U N I C S > ^68C 09828 • ütjjÈ M & -f =t— K (F a st R e c o v e ry Diode DFGTA T ñ 29MIN. (1.14) DE I M4 ^ ^ 2 0 5 DOma^fl 1 D 7 "-¿ > 3 ‘ / 3 JL V R R M : 200V— 800V >F(AV): 1 0 A trr : 0.2/*s 5MAX.

Contextual Info: S EM IC O N D U C T O R KDS165T TECHNI CAL DATA SI LI CON EPI TAXI AL PLANAR DIODE ULTRA HIGH SPEED SW ITC H IN G A PPLICATION. FEA T U RE S • L ow Forw ard V oltage. • Fast R everse R ecovery T im e. • Sm all T otal C apacitance. DIM A 2.9± 0.2 n B

SD-46 Diode

Abstract: Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006
Contextual Info: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE

schottky diode 60V 5A

Abstract: 30A high speed diode Schottky Diode 20V 5A Schottky diode high reverse voltage marking code 1A diode Schottky Diode 40V 2A Schottky Barrier 3A diode schottky code 10 SCHOTTKY BARRIER DIODE ERG81-004
Contextual Info: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE

300108J

Abstract: ACV11012 ACV12012 ACV12212 ACV13012 ACV31012 ACV32012 ACV33012
Contextual Info: CV ACV AUTOMOTIVE LOW PROFILE MICRO-ISO/MICRO-280 RELAY mm inch 15 .591 22.5 .886 Micro ISO 1c type Micro ISO 1a type 15 .591 22.5 .886 15.7 .618 Micro 280 plug-in type FEATURES • Low profile: 22.5 mm(L)x15 mm(W)×15.7 mm(H) .886 inch(L)×.591 inch(W)×.618 inch(H)

Contextual Info: SVD1N60M/SVD1N60T 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored

Contextual Info: BSP 296 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 Pin 3 D Type VDS ID RDS(on) Package Marking BSP 296 100 V 1A 0.8 Ω SOT-223 BSP 296 Type BSP 296 Ordering Code Q67000-S067

E6327

Abstract: Q67000-S067
Contextual Info: BSP 296 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 Pin 3 D Type VDS ID RDS(on) Package Marking BSP 296 100 V 1A 0.8 Ω SOT-223 BSP 296 Type BSP 296 Ordering Code Q67000-S067

BAS3010A-03W

Abstract: marking AF BAR63-03W
Contextual Info: BAS3010A. Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage typ. 0.41V @ I F = 1A • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package 1)

E6327

Abstract: Q67000-S067
Contextual Info: BSP 296 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 296 100 V 1A 0.8 Ω SOT-223 BSP 296 Type BSP 296 Ordering Code Q67000-S067

RG 702 Diode

Abstract: 100C 1A 300V mosfet MOSFET 600V 1A 0232w
Contextual Info: SID01L60 1A, 600V,RDS ON 12Ω N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente Description TO-251 2.3±0.1 6.6±0.2 5.3±0.2 The SID01L60 (through-hole version) is universally preferred for all commercial-industrial surface mount applications and

Contextual Info: SHINDENGEN Bridge Diode OUTLINE DIMENSIONS D1UB80 Case : 1Z: 1U Case Unit : mm 800V 1A RATINGS ●Absolute Maximum Ratings If not specified Tc=25℃ Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage

Contextual Info: Dual In-line Package ^ T h iia Avalanctetyp* O U T L IN E DIM ENSIONS S1WB A)DZ 800V 1A U nit * mm W eight .* 1.8g • Æ fèlS RATINGS Absolute Maximum Ratings * 5 a -— - _ _ _ _ * J !T Symbol Conditions Item ffi'f-f 7m.fW.

125OC

Abstract: XB01SB04A2BR diode 0.2 V 1A
Contextual Info: XB01SB04A2BR Schottky Barrier Diode 1A, 40V Type ! ! ! ! September 29, 2003 Ver. 4 ! APPLICATIONS " Rectification of compact DC/DC converter " Surge absorption caused by counter force of compact motors " Energy-saving for notebook PCs, hand-set " Protection against reverse connection of battery

AP6924GEY

Contextual Info: AP6924GEY Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL MOSFET WITH SCHOTTKY DIODE K ▼ Low On-Resistance S ▼ Fast Switching Characteristic D ▼ Included Schottky Diode G 20V RDS ON 600mΩ ID A SOT-26 BVDSS A 1A Description The Advanced Power MOSFETs from APEC provide the

Contextual Info: AP6924GEY RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL MOSFET WITH SCHOTTKY DIODE K Low On-Resistance BVDSS S Fast Switching Characteristic RDS ON D Included Schottky Diode G 600m ID A SOT-26 20V A 1A Description The Advanced Power MOSFETs from APEC provide the

diode 600m

Abstract: AP6924GEY
Contextual Info: AP6924GEY Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL MOSFET WITH SCHOTTKY DIODE K ▼ Low On-Resistance S ▼ Fast Switching Characteristic D ▼ Included Schottky Diode 20V RDS ON 600mΩ ID A G A SOT-26 BVDSS 1A Description The Advanced Power MOSFETs from APEC provide the