DIODE 0.2 V 1A Search Results
DIODE 0.2 V 1A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
| CUZ20V |
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Zener Diode, 20 V, USC | Datasheet | ||
| CUZ24V |
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Zener Diode, 24 V, USC | Datasheet | ||
| CUZ16V |
|
Zener Diode, 16 V, USC | Datasheet |
DIODE 0.2 V 1A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2SD2428
Abstract: TF02
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OCR Scan |
D2428 2SD2428 2SD2428 TF02 | |
16FL2CZContextual Info: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED 16(D, F)L2CZ47A Unit in SWITCHING MODE POWER SUPPLY APPLICATION. 10.3 MAX CONVERTER & CHOPPER APPLICATION. • Repetitive Peak Reverse Voltage - 03.2 ± 0.2 - : V r r m =200, 300V • Average Output Rectified Current : Io=16A |
OCR Scan |
L2CZ47A 16DL2CZ47A 16FL2CZ47A 16DL2CZ47AJ 16FL2CZ47A) 16FL2CZ | |
300108J
Abstract: ACV11012 ACV12012 ACV12212 ACV13012 ACV31012 ACV32012 ACV33012
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MICRO-ISO/MICRO-280 300108J 300108J ACV11012 ACV12012 ACV12212 ACV13012 ACV31012 ACV32012 ACV33012 | |
E6327
Abstract: Q67000-S067
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OT-223 Q67000-S067 E6327 Sep-12-1996 E6327 Q67000-S067 | |
RG 702 Diode
Abstract: 100C 1A 300V mosfet MOSFET 600V 1A 0232w
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SID01L60 O-251 01-Jun-2002 RG 702 Diode 100C 1A 300V mosfet MOSFET 600V 1A 0232w | |
AP6924GEYContextual Info: AP6924GEY Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL MOSFET WITH SCHOTTKY DIODE K ▼ Low On-Resistance S ▼ Fast Switching Characteristic D ▼ Included Schottky Diode G 20V RDS ON 600mΩ ID A SOT-26 BVDSS A 1A Description The Advanced Power MOSFETs from APEC provide the |
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AP6924GEY OT-26 AP6924GEY | |
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Contextual Info: BA41W12SAT Regulator ICs Dual output voltage regulator with power saving BA41W12SAT The BA41W12SAT is a general-purpose power supply with outputs : 8V, 1A and 5V, 500mA. The IC is available in a compact TO220FP-5 package. The outputs can be turned off during the power saving state with a built-in switch. Also |
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BA41W12SAT BA41W12SAT 500mA. O220FP-5 O220FP-5 | |
diodes STmicroelectronics marking T01
Abstract: STTA106 STTA106U STTA106RL stta106s
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STTA106/U STTA106U DO-15 STTA106 diodes STmicroelectronics marking T01 STTA106 STTA106U STTA106RL stta106s | |
STTA106
Abstract: STTA106U mosfet morocco diodes STmicroelectronics marking T01 TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE F126 smb marking stmicroelectronics STTA106RL
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STTA106/U STTA106U STTA106 STTA106 STTA106U mosfet morocco diodes STmicroelectronics marking T01 TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE F126 smb marking stmicroelectronics STTA106RL | |
smd diode 1016
Abstract: Rayex elec diode 0.2 V 1A diode smd 1b
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E126167 smd diode 1016 Rayex elec diode 0.2 V 1A diode smd 1b | |
D1UB80Contextual Info: SHINDENGEN General Purpose Rectifiers D1UB80 SMT Bridges OUTLINE DIMENSIONS Case : SOP-4 Unit : mm 800V 1A RATINGS ●Absolute Maximum Ratings If not specified Tc=25℃ Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj Maximum Reverse Voltage |
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D1UB80 1mst10ms D1UB80 | |
S1NB20
Abstract: 1A DIODE 1N
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S1NB20 S1NB20 1A DIODE 1N | |
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Contextual Info: Preliminary Datasheet RJK6025DPD 600V - 1A - MOS FET High Speed Power Switching R07DS0676EJ0100 Rev.1.00 Feb 17, 2012 Features • Low on-resistance RDS on = 13.5 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting |
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RJK6025DPD R07DS0676EJ0100 PRSS0004ZG-A | |
S1VBA60
Abstract: S1VB-A60 s1vb
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S1VBA60 1mst10ms S1VBA60 S1VB-A60 s1vb | |
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800V1A
Abstract: s1vb
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S1VB80 1mst10ms 800V1A s1vb | |
S1VBA20Contextual Info: SHINDENGEN General Purpose Rectifiers S1VBA20 SIL Bridges OUTLINE DIMENSIONS Case : 1V Unit : mm 200V 1A FEATURES Small Single In-Line :SIL Package High IFSM Applicable to Automatic Insertion APPLICATION Switching power supply Home Appliances, Office Equipment |
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S1VBA20 1mst10ms S1VBA20 | |
S1NB60 45
Abstract: S1NB60 s1nb60 12
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S1NB60 1mst10ms S1NB60 45 S1NB60 s1nb60 12 | |
s1vb
Abstract: S1VB60
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S1VB60 1mst10ms s1vb S1VB60 | |
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Contextual Info: SHINDENGEN General Purpose Rectifiers S1NB80 DIL Bridges OUTLINE DIMENSIONS Case : 1N Unit : mm 800V 1A FEATURES Small Dual In-Line :DIL Package 5 mm pitch between terminals Applicable to Automatic Insertion APPLICATION Switching power supply Home Appliances, Office Equipment |
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S1NB80 1mst10ms | |
S1NB80
Abstract: 800V1A
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S1NB80 1mst10ms S1NB80 800V1A | |
S1WB(A)60B
Abstract: s1wb S1WBA60B
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1mst10ms S1WB(A)60B s1wb S1WBA60B | |
S1WBA60B
Abstract: rectifier s1wb S1WB S 80 08 S1WB 40 S1WB(A)60B S1wB s S1WB S 80 06
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1mst10msTj S1WBA60B rectifier s1wb S1WB S 80 08 S1WB 40 S1WB(A)60B S1wB s S1WB S 80 06 | |
S1WBA60B
Abstract: s1wb S1WB(A)60B S1WB 40
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1mst10ms S1WBA60B s1wb S1WB(A)60B S1WB 40 | |
S1WB(A)60B
Abstract: S1WBA60B
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1mst10ms S1WB(A)60B S1WBA60B | |