DIODE 0.2 V 1A Search Results

B5817WS

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5817WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES Power dissipation PCM: 0.2 W Tamb=25℃ Collector current IF: 1 A Collector voltage VR: 20 V Operating and storage junction temperature range

B5819WS

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5819WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES Power dissipation PCM: 0.2 W Tamb=25℃ Collector current IF: 1 A Collector voltage VR: 40 V Operating and storage junction temperature range

Schottky Diode 30V 1A SOD

Abstract: diode SOD-323 B5818WS
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5818WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES Power dissipation PCM: 0.2 W Tamb=25℃ Collector current IF: 1 A Collector voltage VR: 30 V Operating and storage junction temperature range

2SD2428

Abstract: TF02
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE U nit in nun COLOR TV HORIZONTAL OUTPUT APPLICATIONS. • • • High Voltage : V c b O -^O O V High Speed Switching : tf=0.2/as Typ. (Icp = 6A, lBl(end) = 1-2A) Built-in Damper Diode. ^e t-ll n r t V. f P "S in

16FL2CZ

Contextual Info: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED 16(D, F)L2CZ47A Unit in SWITCHING MODE POWER SUPPLY APPLICATION. 10.3 MAX CONVERTER & CHOPPER APPLICATION. • Repetitive Peak Reverse Voltage - 03.2 ± 0.2 - : V r r m =200, 300V • Average Output Rectified Current : Io=16A

20JL2C41A

Abstract: 20JL2C
Contextual Info: TO SHIBA 20JL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20JL2C41A SWITCHING TYPE PO W ER SUPPLY APPLICATION Unit in mm 03.2 + 0.2 / • Repetitive Peak Reverse Voltage V r r m • Average Output Rectified Current I 0 = 2 0A •

byv26 500

Abstract: BYV26 BYV26A BYV26B BYV26C BYV26D BYV26E BYV26DBYV26E
Contextual Info: BYV26A.BYV26E 1 Amp. Very Fast Soft Recovery Glass Passivated Avalanche Diode Dimensions in mm. DO-41 Plastic Voltage 200 to 1000 V. Current 1 A at 55 ºC. 5 +0.2 -0 58.5 ± 0.5 Mounting instructions 1. Min. distance from body to soldering point,

BYV26

Abstract: BYV26A BYV26B BYV26C BYV26D BYV26E
Contextual Info: BYV26A.BYV26E 1 Amp. Very Fast Soft Recovery Glass Passivated Avalanche Diode Dimensions in mm. DO-41 Plastic Voltage 200 to 1000 V. Current 1 A at 55 ºC. 5 +0.2 -0 58.5 ± 0.5 Mounting instructions 1. Min. distance from body to soldering point,

Contextual Info: BYV26A . BYV26E 1 Amp. Very Fast Recovery Glass Passivated Avalanche Diode DO-41 Plastic Current 1.0 A at 55 °C Voltage 200 to 1000 V ø0.8 ±0.05 ø2.6 ±0.1 Dimensions in mm. R +0.2 -0 5 ±0.5 58.5 Mounting instructions 1. Min. distance from body to soldering point,

BYV26A

Contextual Info: BYV26A . BYV26E 1 Amp. Very Fast Recovery Glass Passivated Avalanche Diode DO-41 Plastic Current 1.0 A at 55 °C Voltage 200 to 1000 V ø0.8 ±0.05 ø2.6 ±0.1 Dimensions in mm. R +0.2 -0 5 ±0.5 58.5 Mounting instructions 1. Min. distance from body to soldering point,

EC10QS09

Abstract: EC10QS10 FC53
Contextual Info: SCHOTTKY BARRIER DIODE i.ia / 90~ io o v ecioqso9 ecioqsio FEA TUR ES Miniature Size, Surface Mount Device 2-2 .ÖS7 1.8(.071) 5.3(.209) ° Low Forward Voltage Drop - O IT 8 5 5 - _ 4.7(.168)_ 4.3(169) » Low Power Loss, High Efficiency 0.2(.008) 2.7(.106)

DFG1A2

Contextual Info: 4496205 H H A C H I / O P T O E L E U I R U N I C S > ^68C 09828 • ütjjÈ M & -f =t— K (F a st R e c o v e ry Diode DFGTA T ñ 29MIN. (1.14) DE I M4 ^ ^ 2 0 5 DOma^fl 1 D 7 "-¿ > 3 ‘ / 3 JL V R R M : 200V— 800V >F(AV): 1 0 A trr : 0.2/*s 5MAX.

Contextual Info: S EM IC O N D U C T O R KDS165T TECHNI CAL DATA SI LI CON EPI TAXI AL PLANAR DIODE ULTRA HIGH SPEED SW ITC H IN G A PPLICATION. FEA T U RE S • L ow Forw ard V oltage. • Fast R everse R ecovery T im e. • Sm all T otal C apacitance. DIM A 2.9± 0.2 n B

SD-46 Diode

Abstract: Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006
Contextual Info: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE

300108J

Abstract: ACV11012 ACV12012 ACV12212 ACV13012 ACV31012 ACV32012 ACV33012
Contextual Info: CV ACV AUTOMOTIVE LOW PROFILE MICRO-ISO/MICRO-280 RELAY mm inch 15 .591 22.5 .886 Micro ISO 1c type Micro ISO 1a type 15 .591 22.5 .886 15.7 .618 Micro 280 plug-in type FEATURES • Low profile: 22.5 mm(L)x15 mm(W)×15.7 mm(H) .886 inch(L)×.591 inch(W)×.618 inch(H)

Dsei 2x101-12A

Abstract: ixys dsei 1x31-06c ixys dsei 2x31-06c IXYS DSEI 2X121-02a ixys dsei 2x30-06c DSEI IXYS 2x31-12B 2x61-06c 2x121-02a 2x31-12B 2x31-10b
Contextual Info: FRED Contents Package style/Bauform 1b TO-252 AA 1b 1 1a 1 TO-220 AC 1 1a TO-263 AA 1a 2 TO-247 AD 2 2a TO-247 AD 2b ISOPLUS 247 TM 2a/b 2a 2a 3 SOT-227 B, miniBLOC 3 1999 IXYS All rights reserved VRRM IFAV trr V A ns 600 600 600 6 8 8 35 35 35 600 1000

Contextual Info: SVD1N60M/SVD1N60T 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored

Contextual Info: BSP 296 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 Pin 3 D Type VDS ID RDS(on) Package Marking BSP 296 100 V 1A 0.8 Ω SOT-223 BSP 296 Type BSP 296 Ordering Code Q67000-S067

E6327

Abstract: Q67000-S067
Contextual Info: BSP 296 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 Pin 3 D Type VDS ID RDS(on) Package Marking BSP 296 100 V 1A 0.8 Ω SOT-223 BSP 296 Type BSP 296 Ordering Code Q67000-S067

Contextual Info: BAS3010A. Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage typ. 0.41V @ 1 F = 1A • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package 1)

E6327

Abstract: Q67000-S067
Contextual Info: BSP 296 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 Pin 3 D Type VDS ID RDS(on) Package Marking BSP 296 100 V 1A 0.8 Ω SOT-223 BSP 296 Type BSP 296 Ordering Code Q67000-S067

BAS3010A-03W

Abstract: marking AF BAR63-03W
Contextual Info: BAS3010A. Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage typ. 0.41V @ I F = 1A • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package 1)

BAS3010A-03W

Contextual Info: BAS3010A. Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage typ. 0.41V @ IF = 1A • For high efficiency DC/DC conversion, fast switching, protection and clamping applications BAS3010A-03W 1

E6327

Abstract: Q67000-S067
Contextual Info: BSP 296 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 296 100 V 1A 0.8 Ω SOT-223 BSP 296 Type BSP 296 Ordering Code Q67000-S067