DIOD 100A Search Results

Contextual Info: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION

IT05296

Abstract: 2SJ458
Contextual Info: 2SJ458 Ordering number : EN8578 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ458 General-Purpose Switching Device Applications Features • • Ultrahigh-speed switching. High-speed diod. Specifications Absolute Maximum Ratings at Ta=25°C Parameter

Triac 12F

Abstract: irkt 40 thyristor silicon WAFER chips 31017 triac 1200V 21PT 36MB-A 40HF 70HF 85HF
Contextual Info: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0 h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION

p j 85 diod

Abstract: 78 DIOD FAST DIOD
Contextual Info: Datenblatt / Data sheet SH Schnelle besch altungslose Diode Fast Hard Drive Diod e D 931SH Elektrisch e Eig enschaften / Electrical properties Höchstzul ässige Werte / M aximum rated val ues Periodische Rüc kwärts-Spitzensperrspannung Kenndaten repetiti ve peak reverse voltages

78 DIOD

Contextual Info: Datenblatt / Data sheet SH Schnelle besch altungslose Diode Fast Hard Drive Diod e D 1031SH Elektrisch e Eig enschaften / Electrical properties Höchstzul ässige Werte / M aximum rated val ues Periodische Rüc kwärts-Spitzensperrspannung Kenndaten repetiti ve peak reverse voltages

78 DIOD

Contextual Info: Datenblatt / Data sheet SH Schnelle besch altungslose Diode Fast Hard Drive Diod e D 1031SH Elektrisch e Eig enschaften / Electrical properties Höchstzul ässige Werte / M aximum rated val ues Periodische Rüc kwärts-Spitzensperrspannung Kenndaten repetiti ve peak reverse voltages

78 DIOD

Contextual Info: Datenblatt / Data sheet SH Schnelle besch altungslose Diode Fast Hard Drive Diod e D 1331SH Elektrisch e Eig enschaften / Electrical properties Höchstzul ässige Werte / M aximum rated val ues Periodische Rüc kwärts-Spitzensperrspannung Kenndaten repetiti ve peak reverse voltages

p j 85 diod

Abstract: diod 100A diod
Contextual Info: Datenblatt / Data sheet SH Schnelle besch altungslose Diode Fast Hard Drive Diod e D 1951SH Elektrisch e Eig enschaften / Electrical properties Höchstzul ässige Werte / M aximum rated val ues Periodische Rüc kwärts-Spitzensperrspannung Kenndaten repetiti ve peak reverse voltages

diod 314

Contextual Info: Datenblatt / Data sheet SH Schnelle besch altungslose Diode Fast Hard Drive Diod e D 911SH Elektrisch e Eig enschaften / Electrical properties Höchstzul ässige Werte / M aximum rated val ues Periodische Rüc kwärts-Spitzensperrspannung Kenndaten repetiti ve peak reverse voltages

78 DIOD

Contextual Info: Datenblatt / Data sheet SH Schnelle besch altungslose Diode Fast Hard Drive Diod e D 1331SH Elektrisch e Eig enschaften / Electrical properties Höchstzul ässige Werte / M aximum rated val ues Periodische Rüc kwärts-Spitzensperrspannung Kenndaten repetiti ve peak reverse voltages

Contextual Info: Datenblatt / Data sheet SH Schnelle besch altungslose Diode Fast Hard Drive Diod e D 911SH Elektrisch e Eig enschaften / Electrical properties Höchstzul ässige Werte / M aximum rated val ues Periodische Rüc kwärts-Spitzensperrspannung Kenndaten repetiti ve peak reverse voltages

Contextual Info: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diod Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode

25A SCREW MOUNTED DIODE

Abstract: PM505 PM50502C ti5T
Contextual Info: HITACHI PM50502C SILIC O N N -C H A N N EL P O W E R MOS F E T M O D ULE HIGH SPEED POW ER SWITCHING • FEA TU RES • Equipped with Power MOS FET • Low On-Resistance • High Speed Switching • Low Drive Current • Wide Area of Safe Operation • Inherent Parallel Diod between Source and Drain

RHR15120

Abstract: DIODE RHR15120 RHR1512 TA49098 silicon diode 1200V capacitance RHRP15120
Contextual Info: in t e RHRP15120 r r ii J a n u a ry . Data Sheet w in File Num ber 3677.2 15A, 1200V Hyperfast Diode Features T he R H R P 15 12 0 is a hyperfast diod e w ith so ft recovery • H yp erfast w ith S o ft R e c o v e ry . . < 65ns • O pe ra ting T e m pe rature.

TC04A-200

Abstract: Semtech ac tvs high speed low power thyristor thyristor rectifier 100a
Contextual Info: TC04A-200 Battery Tracking TransClamp™ For SLIC Linecard Protection PRELIMINARY PROTECTION PRODUCTS Description Features The battery tracking TransClamp series of transient voltage suppressors TVS are designed to protect subscriber line interface circuit (SLIC) from transient

Contextual Info: IRLM220A N-Channel A-FET 200 V, 1.13 A, 800 mΩ FEATURES BVDSS = 200 V ν Avalanche Rugged Technology RDS on = 0.8 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance ID = 1.13 A ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = 200V

TRANSISTOR 1300 1b

Contextual Info: TO SH IB A D I S C R E T E / O P T O 45E ß • T C H T B S D DDlTTfib □ ■ T0S4 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ir - YTFP452 MOSI) T 1 INDUSTRIAL APPLICATIONS Unit ln HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR

Contextual Info: FDP2710 N-Channel PowerTrench MOSFET 250 V, 50 A, 42.5 mΩ Features General Description • RDS on = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A • Low Gate Charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has

Contextual Info: FDB2710 N-Channel PowerTrench MOSFET 250 V, 50 A, 42.5 mΩ Features General Description • RDS on = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored

Contextual Info: [PRODUCT ^litron CÂTÂLO' N-CHANNEL ENHANCEMENT MOS FET 6 0 V , 3 0 A , 0.04 0 ABSOLUTE MAXIMUM RATINGS SDF044 SDF044 PARAMETER JAA JAB FEATURES • RUGGED PACKAGE • HI-REL CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS

power mosfet 900v

Abstract: diode a42
Contextual Info: PRO D UCT C Â T Â IO » Æ litT O Ïl N -CHANNEL ENHANCEMENT MOS FET 900V, 11A , 0 . 9 5 n SDF11N90 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES

Contextual Info: FDB2614 N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS on = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

NPN VCE0 1000V

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50M2YK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The C o l l e c t o r i s I s o l a t e d from Case. . 2 Power T r a n s i s t o r s and 2 F re e Wheeling Diodes a r e B u i t - i n to 1 Pac kage.

SSP6N70

Abstract: ssp6n70a
Contextual Info: SSP6N70A Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 mA Max. @ VOS= 700V ^DS(on) = 1 .8 & < CO II _o • ■