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Power Integrations


Power Integrations 1SP0635D2S1C-DIM1500ESM33-PR500 Gate Drivers Plug-and-Play Gate Driver, SCALE-2, slave, conformal coating
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	1SP0635D2S1C-DIM1500ESM33-PR500					1 - 10 $202.10 100 $181.26 1000 $181.26 10000 $181.26	Get Quote
Avnet Asia	1SP0635D2S1C-DIM1500ESM33-PR500			12 Weeks	6	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Power Integrations 1SP0635S2M1-DIM1500ESM33-PR500 Gate Drivers Plug-and-Play Gate Driver, SCALE-2, master, fiber optic interface with ST, generic version
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	1SP0635S2M1-DIM1500ESM33-PR500					1 - 10 $425.69 100 $412.59 1000 $412.59 10000 $412.59	Get Quote
Power Integrations 1SP0635S2M1C-DIM1500ESM33-PR500 Gate Drivers Plug-and-Play Gate Driver, SCALE-2, master, fiber optic interface with ST
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	1SP0635S2M1C-DIM1500ESM33-PR500					1 - 10 $500.29 100 $484.90 1000 $484.90 10000 $484.90	Get Quote
Avnet Asia	1SP0635S2M1C-DIM1500ESM33-PR500			12 Weeks	6	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Power Integrations 1SP0635D2S1-DIM1500ESM33-PSA012 Gate Drivers PI Gate Driver Only
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	1SP0635D2S1-DIM1500ESM33-PSA012					1 - 10 $141.90 100 $127.27 1000 $127.27 10000 $127.27	Get Quote
Power Integrations 1SP0635D2S1-DIM1500ESM33-PR500 Gate Drivers Plug-and-Play Gate Driver, SCALE-2, slave, generic version
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	1SP0635D2S1-DIM1500ESM33-PR500					1 - 10 $141.90 100 $127.27 1000 $127.27 10000 $127.27	Get Quote

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DIM15 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: DIM150WHS12-E000 DIM150WHS12-E000 Half Bridge IGBT Module PDS5630-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)	Original	DIM150WHS12-E000 PDS5630-1 DIM150WHS12-E000	PDF
Contextual Info: DIM1500ESM33-TL000 Single Switch IGBT Module Replaces DS6112-1 DS6112-2 September 2014 LN31983 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat)* (typ) IC (max) IC(PK) (max)	Original	DIM1500ESM33-TL000 DS6112-1 DS6112-2 LN31983)	PDF
DIM1500ESM33-TS000 Abstract: DIM1500ESM33-TS Contextual Info: DIM1500ESM33-TS000 Single Switch IGBT Module Replaces DS6072-5 DS6072-6 September 2014 LN31982 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)	Original	DIM1500ESM33-TS000 DS6072-5 DS6072-6 LN31982) DIM1500ESM33-TS000 DIM1500ESM33-TS	PDF
DIM1500ASM33-TS001 Contextual Info: DIM1500ASM33-TS001 Single Switch IGBT Module Replaces DS6095-1 DS6095-2 September 2014 LN31956 FEATURES KEY PARAMETERS • 10.2kV Isolation  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)	Original	DIM1500ASM33-TS001 DS6095-1 DS6095-2 LN31956) DIM1500ASM33-TS001	PDF
Contextual Info: DIM150WHS12-H000 DIM150WHS12-H000 Fast Half Bridge IGBT Module Target Infomation DS5630-1.1 September 2003 FEATURES • Non Punch Through Silicon ■ 10µs Short Circuit Withstand ■ fsw for Applications > 20kHz ■ Isolated Copper Baseplate KEY PARAMETERS	Original	DIM150WHS12-H000 DS5630-1 20kHz DIM150WHS12-H000	PDF
DIM150WHS17-E000 Contextual Info: DIM150WHS17-E000 DIM150WHS17-E000 Half Bridge IGBT Module PDS5716-1.2 February 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)	Original	DIM150WHS17-E000 PDS5716-1 DIM150WHS17-E000	PDF
DIM150PSM45-F000 Contextual Info: Preliminary Information DIM150PSM45-F000 Single Switch IGBT Module DS5956.1 January 2010 LN26978 FEATURES 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated AlSiC Base with AlN Substrates KEY PARAMETERS VCES	Original	DIM150PSM45-F000 DS5956 LN26978) DIM150PSM45-F000	PDF
Contextual Info: DIM1500ASM33-TS001 Single Switch IGBT Module DS6095-1 April 2013 LN30405 FEATURES KEY PARAMETERS • 10.2kV Isolation  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT	Original	DIM1500ASM33-TS001 DS6095-1 LN30405)	PDF
IC 21069 Contextual Info: DIM150CHS17-E000 DIM150CHS17-E000 Half Bridge IGBT Module PDS5716-1.2 February 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)	Original	DIM150CHS17-E000 PDS5716-1 DIM150CHS17-E000 IC 21069	PDF
Contextual Info: DIM150WHS12-E000 DIM150WHS12-E000 Half Bridge IGBT Module PDS5630-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)	Original	DIM150WHS12-E000 PDS5630-1 DIM150WHS12-E000	PDF
DIM1500ASM33-TL001 Contextual Info: DIM1500ASM33-TL001 Single Switch IGBT Module DS6103-1 June 2013 LN30625 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10.2kV Isolation  10µs Short Circuit Withstand VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Thermal Cycling Capability	Original	DIM1500ASM33-TL001 DS6103-1 LN30625) DIM1500ASM33-TL001	PDF
DIM150CHS12-E000 Contextual Info: DIM150CHS12-E000 DIM150CHS12-E000 Half Bridge IGBT Module PDS5713-1.0 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)	Original	DIM150CHS12-E000 PDS5713-1 DIM150CHS12-E000	PDF
Contextual Info: DIM1500ESM33-TL000 Single Switch IGBT Module DS6112-1 June 2013 LN30640 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat)* (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT	Original	DIM1500ESM33-TL000 DS6112-1 LN30640)	PDF
Contextual Info: DIM1500ASM33-TL001 Single Switch IGBT Module DS6103-1 June 2013 LN30625 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10.2kV Isolation  10µs Short Circuit Withstand VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Thermal Cycling Capability	Original	DIM1500ASM33-TL001 DS6103-1 LN30625)	PDF

Contextual Info: DIM1500ESM33-TL000 Single Switch IGBT Module DS6112-1 June 2013 LN30640 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat)* (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT	Original	DIM1500ESM33-TL000 DS6112-1 LN30640)	PDF
Contextual Info: DIM1500ESM33-TS000 Single Switch IGBT Module Replaces DS6072-3 DS6072-4 April 2013 LN30425 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)	Original	DIM1500ESM33-TS000 DS6072-3 DS6072-4 LN30425)	PDF
Contextual Info: DIM1500ESM33-TS000 Single Switch IGBT Module Replaces DS6072-3 DS6072-4 April 2013 LN30425 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)	Original	DIM1500ESM33-TS000 DS6072-3 DS6072-4 LN30425)	PDF