DIE PROCESS INFORMATION Search Results

Contextual Info: February 10, 2005 CN-502101 Product Change Notification Die Sales Production Process Change Dear Valued Customer: This notice is to inform you that Mindspeed Technologies has been notified of a process change by our die sales subcontract supplier. Reject die identified at the post-saw inspection

PIC16 example ay0438

Abstract: 30014 QCI-30014 sugar production process 85c72 PIC16 example codes QCI-30397 PIC16-17 27c64 EEPROM AY0438
Contextual Info: DIE SUPPORT Overview of Microchip Die Specifications INTRODUCTION This overview is intended to give our customers a better understanding of Microchip’s process of die usage and manufacture. This information is not intended as what is needed to manufacture die. It is highly recommended

Contextual Info: DIE PRODUCTS BURR-BROWN* •B B OPA633 DIE I High Speed Buffer AMPLIFIER DIE FEATURES DESCRIPTION • • • • The OPA633 die is a monolithic unity-gain buffer am­ plifier featuring very wide bandwidth and high slew rate. A dielectric isolation process incorporating both

marking E5 amplifier

Abstract: mdb 501 E5 monolithic amplifier M11 marking OPA633 OPA633AD isolation amplifier ad
Contextual Info: DIE PRODUCTS « Ü R R -B R Q W M » OPA633 DIE High Speed Buffer AMPLIFIER DIE FEATURES DESCRIPTION • • • • The OPA633 die is a monolithic unity-gain buffer am­ plifier featuring very wide bandwidth and high slew rate. A dielectric isolation process incorporating both

Contextual Info: MAAPGM0047-DIE Amplifier, 400 mW 16.0—19.5 GHz MAAPGM0047-DIE 903206 — Preliminary Information Features ♦ ♦ ♦ ♦ 400 mW Saturated Output Power Level Variable Drain Voltage 4-10V Operation GaAs MSAG Process Proven Manufacturability and Reliability

Contextual Info: Advance Information RO-P-DS-3085 MAAPGM0052-DIE MAAPGM0052-DIE 4.0-18.0 GHz Distributed Power Amplifier Features ♦ ♦ ♦ ♦ 0.5 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation GaAs MSAG Process Proven Manufacturability and Reliability

electric assisted power steering system

Abstract: BUK9006-55A
Contextual Info: Naked power die program Known Good Die KGD automotive power MOSFETs Philips’ naked power die program overcomes the manufacturing, testing and delivery problems associated with this process. It enables the manufacture of high-quality, fully tested power MOSFETs with extremely low on-resistance,

Contextual Info: RO-P-DS-3014 A Preliminary Information MAAPGM0027-DIE 2.0-4.0 GHz 1W Power Amplifier MAAPGM0027-DIE Features ♦ ♦ ♦ ♦ 1 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation GaAs MSAG Process Proven Manufacturability and Reliability

Contextual Info: RO-P-DS-3017 A Preliminary Information MAAPGM0036-DIE 1.2-3.2 GHz 1.2W Power Amplifier MAAPGM0036-DIE Features ♦ ♦ ♦ ♦ 1.2 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation GaAs MSAG Process Proven Manufacturability and Reliability

3079 ASSEMBLY

Abstract: RO-P-DS-3079
Contextual Info: RO-P-DS-3079 Preliminary Information MAAPGM0049-DIE 24.5 –29.0 GHz 0.5 W Power Amplifier MAAPGM0049-DIE Features ♦ ♦ ♦ ♦ 0.5 Watt Saturated Output Power Level Variable Drain Voltage 5-8V Operation GaAs MSAG Process Proven Manufacturability and Reliability

MAAPGM0030-DIE

Contextual Info: RO-P-DS-3021 A Preliminary Information MAAPGM0030-DIE 5.0-9.0 GHz 1W Power Amplifier MAAPGM0030-DIE Features ♦ ♦ ♦ ♦ 1 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation GaAs MSAG Process Proven Manufacturability and Reliability

KMC-184

Abstract: ESD test plan Q092XS1 76 HC10 hf2c N00186 PF40 TS921 TS922 TS924
Contextual Info: Q092XS1 QUALIFICATION REPORT SHORT FORM DEVICE INFORMATION TYPE TS92X FUNCTION RAIL TO RAIL HIGH OUTPUT CURRENT OPERATIONAL AMPLIFIER FAMILY FAMILY R/R OPAMP DIE PROCESS PROCESS WAFER SIZE CHIP DIMENSION µm TS921 HF2CMOS 6" 1380 * 1190 TS922 HF2CMOS 6"

Contextual Info: RO-P -DS -3014 B Preliminary Information MAAPGM0027-DIE 2.0-4.0 GHz 1W Power Amplifier MAAPGM0027-DIE Features ♦ ♦ ♦ ♦ 1 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation GaAs MSAG Process Proven Manufacturability and Reliability

PCN9619

Abstract: PQFP die size PQFP ALTERA 160 EPM7192E EPM7256E
Contextual Info: PRODUCT CHANGE NOTIFICATION EPM7192E AND EPM7256E DEVICES Overview The EPM7192E and EPM7256E devices are being transitioned to a 0.65-micron process. The new die will be pin-, function-, timing-, and programming-file compatible with existing die revisions. This notification addresses Altera’s intent to substitute 0.65micron die into the EPM7192E and EPM7256E devices that currently use larger criticaldimension die.

MAAPGM0026

Abstract: MAAPGM0026-DIE
Contextual Info: Amplifier, Power, 0.6W 1.5-3.3 GHz MAAPGM0026-DIE 903185 — Preliminary Information Features ♦ 0.6 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ MSAG Process Description The MAAPGM0026-DIE is a 2-stage, 0.6 W power amplifier with

Contextual Info: RO-P-DS-3047 B Preliminary Information MAAMGM0002-DIE MAAMGM0002-DIE 1.0 – 18.0 GHz 0.1W Distributed Amplifier Features ♦ ♦ ♦ ♦ 0.1 Watt Saturated Output Power Level 1.0 to 18.0 GHz Operation Select-at-Test Biasing Self-Aligned MSAG MESFET Process

MAAPGM0029

Abstract: MAAPGM0029-DIE
Contextual Info: Amplifier, Power, 1W 3.5-6.5 GHz MAAPGM0029-DIE 903240 — Preliminary Information Features ♦ 1 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ MSAG Process Description The MAAPGM0029-Die is a 2-stage 1 W power amplifier with

Contextual Info: 13.5-15.0 GHz 1.6W Amplifier MAAPGM0043-DIE RO-P-DS-3041 A Preliminary Information Features ♦ 1.6 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ MSAG Process Description The MAAPGM0043-DIE is a 3-stage 1.6 W power amplifier

Contextual Info: Phase Shifter 1.0-1.9 GHz MAPCGM0001-DIE 903215 — Preliminary Information Features ♦ ♦ ♦ ♦ 6 Bit Phase Shifter 360º Coverage, LSB = 5.6º TTL Control Inputs MSAG Process Description The MAPCGM0001-Die is a 6-bit Phase Shifter with Parallel TTL

"Phase Shifter" MAPCGM0001

Abstract: MAPCGM0001-DIE
Contextual Info: Phase Shifter 1.0-1.9 GHz MAPCGM0001-DIE 903215 — Preliminary Information Features ♦ ♦ ♦ ♦ 6 Bit Phase Shifter 360º Coverage, LSB = 5.6º TTL Control Inputs MSAG Process Description The MAPCGM0001-Die is a 6-bit Phase Shifter with Parallel TTL

CARSEM

Abstract: 225E-01 0.5um ICC03290 MP8000C 84-1-lmis-r4 tsmc cmos model tsmc Activation Energy HRS100
Contextual Info: Reliability Engineering Tucson Corporation Analytical Services Qualification Description: Qualify new model. Model: RA: PA: Date: Die Name: Die Size: Mask Revision: Wafer Fab Site: Process: Technology: Metal 1: Metal 2: Metal 3: Passivation: HTOL assem/wafer/lot :

Contextual Info: 3.0-6.0 GHz 1.2W Power Amplifier MAAPGM0022-DIE RO-P-DS-3011 A Preliminary Information Features ♦ 1 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ MSAG MESFET Process Description The MAAPGM0022-Die is a 2-stage 1.2 W power amplifier

Contextual Info: RO-P-DS-3082 Preliminary Datasheet MAALGM0006-DIE 2.0-7.0 GHz Low Noise Amplifier MAALGM0006-DIE Features ♦ ♦ ♦ ♦ 50 mW Saturated Output Power Level Variable Drain Voltage 3-6V Operation GaAs MSAG Process Proven Manufacturability and Reliability

MASWGM0002-DIE

Contextual Info: Switch, Single-Pole, Double-Throw 2.0-20.0 GHz MASWGM0002-DIE 903230 — Preliminary Information Features ♦ ♦ ♦ ♦ ♦ 2.0-20.0 GHz Operation 3 dB Insertion Loss TTL Control Excellent Match on Off Port MSAG Process Description The MASWGM0002-Die is a single pole double throw switch