DIE BOND Search Results

LMxxx

Contextual Info: DPBU Die Datasheet LMXXX MDA MWA EXAMPLE DIE DATASHEET DEVICE DISCRIPTION November 14,2002 DIE LAYOUT A-STEP DIE/WAFER CHARACTERISTICS Fabrication Attributes Physical Die Identification Die Step General Die Information LMXXX Bond Pad Opening Size 000µm x 000µm

Contextual Info: Packaging - Handling Gallium Arsenide Die Handling Gallium Arsenide Die Gallium arsenide die have physical properties that require special care in assembly to ensure high yields and good reliability. A few simple precautions in the die mounting and wire bonding

Contextual Info: Direct Link 1173 Products & Technologies Miniaturisierte Drucksensorelemente Februar 2009 Robuster Allrounder Nur noch 1,65 x 1,65 mm² messen die Sensorelemente der Familie C32. Die neuen Chips stattet EPCOS mit optimierten Bondpads aus, die über räumlich abgesetzte Testpad-Strukturen für Waferprober verfügen. Wie die

LRIS64K

Abstract: DSASW003741
Contextual Info: TN0193 Technical note LRIS64K bumped die description Product information • Product name: LRIS64K Wafer and die features July 2010 Wafer diameter: 8 inches Wafer thickness: 180 µm Die identification: M24RF64A1 Die finishing front side : SiO2 Die finishing (back side):

F37011

Contextual Info: TN0055 Technical note SRI4K die description Product information ● Product name: SRI4K ● Die code: P117ZMY Wafer and die features October 2007 Wafer diameter 8" Wafer thickness 180 µm Die technology F6SPs40s 3M 1P Diffusion Plant Chartered Die identification

IXTH110

Abstract: 851 36 RG 16 26 ixth110n25t IXTD110N25T-8W as001 A114B dimensions
Contextual Info: Preliminary Technical Information Trench Gate Power MOSFET Die IXTD110N25T-8W VDSS = 250V N-Channel Enhancement Mode Die Outline Notes: 1. Die Thickness: 200 ± 25 m 2. Die Size Tolerance: ± 50 μm 3. Top Bonding Pad Metal: 30 KÅ nominally thick Al 4. Back Metal: 3 layers of Ti, Ni & Au;

transistor MN1

Abstract: NAND Qualification Reliability HC00D SN74HC00 texas instruments lot trace code EN-4088Z HC00 HCT00 SN74HCT00 S01-06800
Contextual Info: TEXAS INSTRUMENTS Qualification Notification for the SN74HC00 and SN74HCT00, Die Revision K August 20, 1997 Abstract Texas Instruments qualified the SN74HC00 and SN74HCT00 die revision K, to replace the SN74HC00 die revision F and the SN74HCT00 die revision G. Die revision K is a product

transistor B 1184

Contextual Info: SIPMOS Chip-Produkte/SIPMOS Die Products SIPMOS Power Transistor Dice Die type Recommended source bond wire diameter1 urn Die topology Page 1.500 0.600 SIPC08P20 SIPC08P10 250 250 - 50 0.030 0.035 0.055 0.055 0.070 0.070 0.100 0.100 SIPC20AN05 SIPC20AN05L

Die Attach epoxy stamping

Abstract: 60022 pressure low die attach coefficient of thermal expansion of thermal conductive pressure sensitive adhesive
Contextual Info: Application Note Handling Gallium Arsenide Die Rev 2 INTRODUCTION Gallium arsenide die have physical properties that require special care in assembly to ensure high yields and good reliability. A few simple precautions in the die mounting and wire bonding operations

irf*234 n

Abstract: IRFBE40 IRF540 p-channel MOSFET IRFBG40 irf540 800v irfz24 mosfet IRFCG50 IRFC034 HEXFET Guide international rectifier d10
Contextual Info: INTERNATIONAL RECTIFIER 2bE D International S S Rectifier • 4flSS455 OOIQIOO b ■ HEXFET Die T-3J'?0 . Electrical Probe Specifications for N-Channel HEXFET ill Power MOSFET Die Recommended Bond Wire Size Closest Packaged Part Number Die Figure Number 5

Contextual Info: Chip Mounting and Handling of GaAs MMIC Chips CHIP DIE DOWN BONDING TECHNIQUES Die Attach The important considerations for die attach are to have low thermal resistance, strong mechanical bond over the desired temperature range, and no damage occurring to the chip

Contextual Info: /= T SGS-THOMSON * 7 # . iMnaoiiLiCTisiMnei_ BUZ11A c h ip N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE:

8815 k

Abstract: 8810 WU-M-392 WU-M vossloh
Contextual Info: Wärmeleitende Transferklebebänder für LED-Module TM 3M Typ 8810 und Bergquist Bond-Ply 100 Durch die weiche Oberflächenbeschaffenheit können sich die Klebefolien auch unebenen Substraten anpassen und bieten eine große Klebkraft und Wärmekopplung. Die besondere

MAX232

Abstract: EN-4088Z SN74ABT16240 SN74ABT16240A SN74ABT16241 SN74ABT16241A 1500KV ABT16241 Hitachi EN-4088Z ABT16240A
Contextual Info: TEXAS INSTRUMENTS Qualification Notification for the SN74ABT16240A and SN74ABT16241A, Die Revision D February 20, 1997 Abstract Texas Instruments qualified the SN74ABT16240A and SN74ABT16241A die revision D replacing die revision B. Die revision D includes an all layer change, which incorporates timing

SN74ABT162823

Abstract: SN74ABT162823A
Contextual Info: TEXAS INSTRUMENTS Device Revision Notification for the ABT162823A Die Revision A August 9, 1996 Abstract Texas Instruments has qualified the SN74ABT162823A, Die Revision A, to replace the SN74ABT162823, Die Revision X. Die revision A was designed to improve ESD performance. Data

outsourcing IBM

Abstract: avnet celestica flextronics national semiconductor CC
Contextual Info: Considerations in Converting from SMT to Die Assemblies National Semiconductor Technical Seminar Series Die Product Business Unit June 26 2003 1 Approaches, Options & Solutions • Die conversion trends and drivers • Die interconnect approaches • Device and information resources

LP0701

Contextual Info: Supertex inc. LP0701 Die Specification Pad Layout 1 2 3 0,0 Backside: Drain Die Specifications Die Dimensions Device Length1 Width1 Thickness (mils) Back Side Metal 50 70 11 ± 1.5 None (mils) LP0701 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si

MAX3970

Contextual Info: Application Note: HFAN-8.0.1 Rev.1; 04/08 Understanding Bonding Coordinates and Physical Die Size Maxim Integrated Products Understanding Bonding Coordinates and Physical Die Size MAX3970 3 1 Introduction When calculating pad coordinates, there is often confusion between the die size specified in the data

LND150

Contextual Info: Supertex inc. LND150 Die Specification Pad Layout 2 3 1 0,0 Backside: Source Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 11 ± 1.5 None 1 (mils) LND150 1 (mils) Back Side Bonding Pad Material Source Voltage

Ablebond 71-1

Abstract: Ablebond 71 BCT8373 SN74BCT8373 SN74BCT8373A 5247 8 pin
Contextual Info: TEXAS INSTRUMENTS Qualification Notification for the SN74BCT8373A, Die Revision B February 7, 1996 Abstract Texas Instruments has qualified the SN74BCT8373A, Die Revision B, to replace the SN74BCT8373, no die revision. Die revision B was redesigned to conform to IEEE Standard 1149.11990 JTAG . The die and device revision are necessary to change the TDO drive state controls to

siemens matsua kondensator

Abstract: Siemens gleichrichter MKK-DC
Contextual Info: Leistungselektronik wird zunehmend integriert Mehr Power im System Die elektronische Revolution findet nicht nur in der digitalen Welt statt; für die Zukunft mindestens genauso wichtig sind die Herausforderungen beispielsweise an die Leistungselektronik. Das beweist der derzeitige Boom im Power-Bereich. Einer der

Contextual Info: Application Note Switch Die Measurement Fixture Rev 0 RELEVANT PRODUCTS • calibration structure and the other 24 elements are used to measure die. Figure 1 illustrates a measurement element for a single pole, double throw SPDT switch die. All ANADIGICS Switch Die

SN74ABT5400

Abstract: SN74ABT5400A SN74ABT5402 SN74ABT5402A ABT5402A
Contextual Info: TEXAS INSTRUMENTS Qualification Notification for the SN74ABT5400A, Die Revision C SN74ABT5402A, Die Revision B April 26, 1996 Abstract Texas Instruments Advanced System Logic is issuing this notification to qualify the SN74ABT5400A, die revision C and the SN74ABT5402A, die revision B, to replace the

leistungs dioden siemens

Abstract: Siemens Electromechanical Components Siemens gleichrichter ferritkerne thyristor eupec
Contextual Info: Leistungselektronik wird zunehmend integriert Mehr Power im System Die elektronische Revolution findet nicht nur in der digitalen Welt statt; für die Zukunft mindestens genauso wichtig sind die Herausforderungen beispielsweise an die Leistungselektronik. Das beweist der derzeitige Boom im Power-Bereich. Einer der