DI 321 Search Results

Contextual Info: Capitolo 17: Programmazione Definizione di programmazione .294 Esecuzione di un programma Avvio di una sessione di Program Editor .298

Contextual Info: Sensori per industria di processo Panoramica prodotti – edizione 2013 Un partner affidabile. Preciso. All’avanguardia. Sensori per industria di processo MEX2 MEX3, MEM3 MEX5, MEM5 MIX7, MIM7 MEP5 MEX8 MMN5 MPx6 na gi Pa M Pressione meccanica MMX1 an M ome

DIODE(IN4007) datasheet

Abstract: IN4007 diode Surgector TIP 27 DIODE IN4007 HC5515CM HC5515 PBL3860
Contextual Info: HC5515 TM Data Sheet October 2000 ITU CO/PABX SLIC with Low Power Standby • DI Monolithic High Voltage Process The HC5515 is fabricated in a High Voltage Dielectrically Isolated DI Bipolar Process that eliminates leakage currents and device latch-up problems normally associated

TIP 27

Abstract: RLR RESISTORS HC5526 HC5526CM PBL3764 ERICSSON PABX
Contextual Info: HC5526 TM Data Sheet October 2000 ITU CO/PABX SLIC with Low Power Standby • DI Monolithic High Voltage Process The HC5526 is fabricated in a High Voltage Dielectrically Isolated DI Bipolar Process that eliminates leakage currents and device latch-up problems normally associated

PBL3764

Abstract: HC5513 HC5513BIP TR909 Diodes In4007 ERICSSON PABX RSG D3-0505N
Contextual Info: R EC TR909 DLC/FLC SLIC with Low Power Standby Part Number Information HC5513BIP -40 to 85 FN3963.12 • DI Monolithic High Voltage Process The HC5513 is fabricated in a High Voltage Dielectrically Isolated DI Bipolar Process that eliminates leakage currents and device latch-up problems normally associated

IN4007

Contextual Info: RE C TR909 DLC/FLC SLIC with Low Power Standby Part Number Information HC5513BIP -40 to 85 FN3963.12 • DI Monolithic High Voltage Process The HC5513 is fabricated in a High Voltage Dielectrically Isolated DI Bipolar Process that eliminates leakage currents and device latch-up problems normally associated

DS493

Contextual Info: Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 11. Mai n System PartLi st CODE DESCRI PTI ON REFERENCE EA 3920501 j ack-usb-4p-mnt4,JACK-USB;-,-,-,-,- J505 J2501 J2502 3 0401-000191 di ode,DI ODE-SWI TCHI NG;MMBD4148,75V,200MA,SOT-23,TP

dh 321

Contextual Info: THIS DRAWING IS C O P Y R IG H T U N P U B L IS H E D . 19 RELEASED BY AMP IN COR PO RA TE D. FOR ALL PUBLICATION RIGHTS , 19 LOC RE SE R VE D . BD REVISIONS DI ST 50 L TR DESCRIPTION REVISED - 9=14 DI A [ . 360] -0.51 [ . 2 TYP PER DATE AF0372 PER P.A.R

Contextual Info: Tem ic SÌ9955DY S e m ic on duc to rs Dual N-Channel Enhancement-Mode MOSFET Product Summary V DS V rDS(on)(ß) Id (A) 50 0.13 @ VGS= 10V 0.20 @ VGS = 4.5V ± 3.0 ± 1.5 Recommended upgrade: SÌ9945DY Di D, D2 D2 V SO-8 Si I X X I Di Gi I X s2 X X D' ~6~1 D2

DIODE IN4007 specifications in english

Abstract: DIODE(IN4007) datasheet PBL3764A HC5523 HC5523IM HC5523IP in4007diode
Contextual Info: CT O D U EM EN T R P TE AC O LE E PL O B S N D ED R E 515 OM M Data Sheet HC5 R EC LSSGR/TR57 CO/Loop Carrier SLIC with Low Power Standby FN4144.6 • DI Monolithic High Voltage Process The HC5523 is fabricated in a High Voltage Dielectrically Isolated DI Bipolar Process that eliminates leakage

digital relay 12v 3a datasheet

Abstract: AN549 AN9607 HC4P5509A1R3060 HC5509A1R3060 an 7585
Contextual Info: TM HC5509A1R3060 SLIC Subscriber Line Interface Circuit June 1997 Features Description • DI Monolithic High Voltage Process • High Temperature Alarm Output The HC4P5509A1R3060 telephone Subscriber Line Interface Circuit integrates most of the BORSCHT functions

5962F9467602VPA

Abstract: 5962F9467602VPC HFA1100IJ HFA11XXEVAL HS-1100RH HS7-1100RH-Q HS7B-1100RH-Q 300KRAD
Contextual Info: HS-1100RH Data Sheet Radiation Hardened, Ultra High Speed Current Feedback Amplifier The HS-1100RH is a radiation hardened high speed, wideband, fast settling current feedback amplifier. Built with Intersil’s proprietary, complementary bipolar UHF-1 DI

ci 7475

Abstract: dell vostro connettori
Contextual Info: Brevetto internazionale del sistema di autobloccaggio dei connettori Fischer Walter Werner Fischer, fondatore della società 1954 1965 1960 Studio d’ingegneria a Morges 1970 Prime realizzazioni in acciaio inox Ufficio e fabbrica a Morges Primi connettori

transistor 3213

Abstract: 321L PT-100 resistance charts 321N marking r2 Panasonic Main Unit VB -5150 pt-100 datasheet PT-100 temperature charts UNR3210 UNR3213
Contextual Info: Transistors with built-in Resistor UNR3210/3213/3216/321L/321N Silicon NPN epitaxial planar transistor Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 0.15 min. • Optimum for downsizing of the equipment and high-density mounting

DCR820SG

Abstract: DCR820SG61 DCR820SG62 DCR820SG63 DCR820SG64 DCR820SG65
Contextual Info: DCR820SG DCR820SG Phase Control Thyristor Supersedes October 2000 version, DS4214-5.1 DS4214-6.0 July 2001 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 6500V ■ High Surge Capability IT AV 387A ITSM 6000A dVdt* 1000V/µs dI/dt 100A/µs APPLICATIONS

PBL3764A/4

Abstract: PBL3764A in4007 diode DIODE IN4007 metal film fused resistor 47 HC5523 HC5523IM HC5523IP in4007diode
Contextual Info: HC5523 TM Data Sheet October 1998 LSSGR/TR57 CO/Loop Carrier SLIC with Low Power Standby Features • DI Monolithic High Voltage Process The HC5523 is a subscriber line interface circuit which is interchangeable with Ericsson’s PBL3764A/4 for distributed

Contextual Info: 2.5mm Round. Di al î ght wse & F n O ptûpîpe Optical Light Pipe, Tri-High, Narrow Pitch Recommended MicroLED SMT LEDs for use with 515-1064 PART NO. COLOR 597-3111-5xx AIGaAs Red PAGE 2-38 597-3211-5xx Orange 2-38 597-3301 -5xx Green 2-38

Contextual Info: CONDENSATEURS CHIPS CERAMIQUE CLASSE 1 CEC CERAMIC CHIP CAPACITORS CLASS 1 Tolérances sur capacité Tolérance on capacitance BASSE TENSION LOW VOLTAGE L W Diélectrique Technologie Terminaisons voir page 10 Terminations (see page 10) Céramique classe 1

3UG4631

Abstract: 3UG4632 2CR20 3ug46 siemens sirius 3ZX1012-0UG46-5AA1 diagrama rele siemens 3UG4632 RELE 24V AA-30
Contextual Info: SIRIUS 3UG4631 3UG4632 Überwachungsrelais zur einphasigen Spannungsüberwachung Monitoring Relays for Single-Phase Voltage Monitoring Relais de surveillance de la tension monophasée Relé de vigilancia de la tensión monofásica Relè di sorveglianza della tensione monofase

DCR820SG

Abstract: DCR820SG61 DCR820SG62 DCR820SG63 DCR820SG64 DCR820SG65 100A 1000V thyristor
Contextual Info: DCR820SG DCR820SG Phase Control Thyristor Supersedes October 2000 version, DS4214-5.1 DS4214-6.0 July 2001 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 6500V ■ High Surge Capability IT AV 387A ITSM 6000A dVdt* 1000V/µs dI/dt 100A/µs APPLICATIONS

Contextual Info: AV DI TH AIL ST RO AB RI U LE BU GH TI ON 3214 – 5-Turn Trimming Potentiometer Features • Surface Mount 4 mm Square / ■ 4 mm design meets EIA/EIAJ/IPC/VECI Multiturn / Cermet / Industrial / Sealed ■ Sealed to withstand board wash processing ■ Pick and place centering design, with

telephone hybrid 2wire to 4wire

Abstract: AN549 AN9607 HC-5509B HC9P5509B-5 TRANSISTOR GKD smd
Contextual Info: HC-5509B TM Data Sheet September 2000 File Number 2799.7 ITU CO/Loop Carrier SLIC Features The HC-5509B telephone Subscriber Line Interface Circuit integrates most of the BORSCHT functions on a monolithic IC. The device is manufactured in a Dielectric Isolation DI

NT5CB256M16

Abstract: NT5CC256M16 NT5CC256
Contextual Info: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP CAS Latency Frequency -DI/DII* -EK* -FL* DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 Min. Min. Speed Bins Units tCK Parameter Max. Max. Min. Max. Avg Clock Frequency 300 800

di 4-0992

Abstract: 5962F9676701VPC 5962F9676701VPA HFA11XXEVAL HS-1135RH HS7-1135RH-Q HS7B-1135RH-Q
Contextual Info: HS-1135RH Data Sheet Radiation Hardened, High Speed, Low Power Current Feedback Amplifier with Programmable Output Limiting The HS-1135RH is a radiation hardened, high speed, low power current feedback amplifier built with Intersil’s proprietary complementary bipolar UHF-1 DI bonded wafer