DH BJ F 15 Search Results

511000B/BL-60

Abstract: hyb 511
Contextual Info: SIEMENS 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 5110OOB/BJ/BZ-60/-70/-80 HYB 511000BUBJL/BZL-60/-70 Advanced Information • 1 048 576 words by 1-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time HYB 511000B/BL-60

j78 transistor

Abstract: F909 t7gc transistor F909 s659
Contextual Info: <>=2834&?2+2&.@44+ A4 0/20B&C''C !"#$%&"'& )*+,-,&./01234567/8+&9:;5%:<&!434*=40 ?4,30*D+*78 %59#Q=TU%#89:93F98#3)6948(69-#(#=>#@;36-A-#+&,#()*# %&'#3)6H#(#68.9#-.8I(:97EH.)6#/(:V(49"#&6#3-#/(86#HI# # -6()*(8*3[9#-.8I(:97EH.)6#=>#@;36-A-#89:93F98-"#

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

siemens EM 235 cn

Contextual Info: SIEMENS 256 K X 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM HYB 514256B/BJ-50/-60/-70 HYB 514256BL/BJL-50/-60/-70 Advanced Information VBB • 262 144 words by 4-bit organization • Single + 5 V ± 10 % supply with a built-in generator Output unlatched at cycle end allows two_

TC514266

Contextual Info: PRELIMINARY 2 6 2 , 1 4 4 \ vCi <L- k 4 i ' T' L ; Y ' ; a !V":C ?, a w ! D ESC RIPTIO N T he "I C i i i -T 7. b i: * .„h? new g ^ r.crau o n dynam ic HAM organized 262,144 words by 4 bits. T he TC51.4-r;i-!BP.BJ,'BZ.“siF;' .• 1 : > TOSHIBA'S CMOS Silicon gate process technology as well as

T9GO

Abstract: T9G01200A 50A 450V SCR LT 428 T9GO 14 BP107 P-149 P-152
Contextual Info: MME7ZEX T9G0 1200A Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 P hâS B Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 A ' ' C o tltto l S C R M 1200 Amperes Average 2400 Volts

025339

Abstract: LT 428 BP107 T820 PGM-16
Contextual Info: T820 900A WHUERBC Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Phase Control SCR 900 Amperes Average 1600 Volts T820 900A Phase Control SCR

Contextual Info: AC Line EMI Suppression and RC Networks PHE820E Series Metallized Polyester Film, Class X2, 300 VAC Overview Applications The PHE820E Series is constructed of series winding of metallized polyester encapsulated in self-extinguishing material meeting the requirements of UL 94 V–0.

05CA

Contextual Info: AC Line EMI Suppression and RC Networks PHE820M Series Metallized Polyester Film, Class X2, 275 VAC Overview Applications The PHE820M Series is constructed of series winding of metallized polyester encapsulated in self-extinguishing material meeting the requirements of UL 94 V–0.

PHE820MF7100

Contextual Info: AC Line EMI Suppression and RC Networks PHE820M Series Metallized Polyester Film, Class X2, 275 VAC Overview Applications The PHE820M Series is constructed of series winding of metallized polyester encapsulated in self-extinguishing material meeting the requirements of UL 94 V–0.

Contextual Info: AC Line EMI Suppression and RC Networks PHE820E Series Metallized Polyester Film, Class X2, 300 VAC Overview Applications The PHE820E Series is constructed of series winding of metallized polyester encapsulated in self-extinguishing material meeting the requirements of UL 94 V–0.

Contextual Info: B C A D Glenair IPT Series Available Insert Arrangements B A B A B A A A B B A D A DE B C B C B A D C D D A C A E A B A A DB DF BE D D C B B C B A F C B CC 1 5 A 4 B A A 2 6 B 3 B IPT Series Bayonet Lock Connectors A D A B C C A C B C A A C A A B B C B A B

TC514256

Abstract: tc514256ap TC514256P-10 BTR-60 514258 AZ110 TC514258 TC514258P-10 MT4C4260-8 AZ-110
Contextual Info: -216 I M CMOS I /iffirSA’ lffl m r, ü & '<; TRAC max (ns) TRCY min (ns) D y n a r r i c X i ' + > TCAl) min (ns) TAH min (ns) ?" n RAM ie (ns) TWCY min (ns) T’ DH ! TRWC ¡nin ! min (ns) i (ns) TP (2 6 2 1 4 4 ft V D D or V C C (V) X 4) 2 0 P I N Â.

Contextual Info: SIEMENS 256 K x 16-Bit Dynamic RAM HYB 514171BJ-60/-70 Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 514171BJL-60/-70 Advanced Inform ation 262 144 w ords by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time Low Power dissipation

Contextual Info: y 2 6 2 ,14 4 W ORD PRELIMINARY x 4 BIT D Y N A M IC RAM D ESC R IP TIO N The TC514256BP/BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514256BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 _9_ \/ 7 8 6 SYMBOL DEFINITION 5 MISSING A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. M TOTAL NO OF

63D13

Abstract: 63B04 63D17
Contextual Info: General Purpose, Pulse and DC Transient Suppression SMR Series Metallized Polyphenylene Sulfide Film, +150°C, 5.0 – 27.5 mm Lead Spacing, 50 – 400 VDC Overview Applications The SMR Series is a metallized polyphenylene sulfide film capacitor with vacuum-evaporated aluminum electrodes. Radial

63D14

Abstract: 63D18 63F12 SMR5683 63a03 63D15 100J06 63B05 100J05 50a04
Contextual Info: General Purpose, Pulse and DC Transient Suppression SMR Series Metallized Polyphenylene Sulfide Film, +150°C, 5.0 – 27.5 mm Lead Spacing, 50 – 400 VDC Overview Applications The SMR Series is a metallized polyphenylene sulfide film capacitor with vacuum-evaporated aluminum electrodes. Radial

63D17

Abstract: 63D18 63D14 63D15 63D13 100J05 63B04 63F12 63A03 63B05
Contextual Info: General Purpose, Pulse and DC Transient Suppression SMR Series Metallized Polyphenylene Sulfide Film, +150°C, 5.0 – 27.5 mm Lead Spacing, 50 – 400 VDC Overview Applications The SMR Series is a metallized polyphenylene sulfide film capacitor with vacuum-evaporated aluminum electrodes. Radial

63D18

Abstract: 63D15 63D17 63D14 SMR15394 63B06 100K03 100J05 SMR5683 100D14
Contextual Info: General Purpose, Pulse and DC Transient Suppression SMR Series Metallized Polyphenylene Sulfide Film, +150°C, 5.0 – 27.5 mm Lead Spacing, 50 – 400 VDC Overview Applications The SMR Series is a metallized polyphenylene sulfide film capacitor with vacuum-evaporated aluminum electrodes. Radial

Contextual Info: A B A B IPT SE Series Bayonet Lock Connectors B A B B B A B A A B A B C A B B A CC A A B A A B A A A B B C C BB B A 3 Contacts B C BB BB B C B B C A BBC A A DA B D A D A D CCAA C A A D C CA A C A E C B B C C C A AD CA CC BBC B DC D BB C B A D A C C A B C C C AA

FMMT918

Abstract: marking of m7 diodes transistor EH sot-23 A12 marking sot-23 MARKING CODE G1 3B sot23 marking m6 marking transistor sot-23 ferranti marking code CB sot23 transistor marking code 7E SOT-23
Contextual Info: FERRANTI * semiconductors FMMT918 NPN Silicon Planar V H F /U H F Transistor DESCRIPTION This device is intended for low noise, high frequency amplifier and oscillator applications. Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid

F450BY104J1K0

Abstract: F450AP183J1K0 F450KG472J400 F450BD333J630 F450BD223J630 F450FV225J400 F450DD223J1K6 F450RP475J400 F450RM684J1K6 F450BM334J250
Contextual Info: General Purpose, Pulse and DC Transient Suppression PHE450 Series Double Metallized Polypropylene Film Overview Applications The PHE450 Series is a polypropylene dielectric with double metallized polyester film as electrodes. The capacitor is encapsulated in self-extinguishing resin in a box of material

marking of m7 diodes

Abstract: BSS63 A12 marking BSS64R C5 MARKING TRANSISTOR device marking code S4 diode marking 2T Diode marking m7 transistor marking code SOT-23 2F Marking H2
Contextual Info: FERRANTI 4 semiconductors BSS64 ! NPN S ilico n Planar H igh V o lta g e T ra n s is to DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the BSS63.