DH BJ F 15 Search Results

Contextual Info: HD30 • HD40 ADP I SRAM o 5 Volt x8 Dual-Port Static RAM Memory Configuration Device 1K x 8 HD30 1K x 8 HD40 Key Features: • • • • • • • • • Industry leading Dual-Port Static RAM up to 15ns Simultaneous memory access through two ports 5V power supply

Contextual Info: P54/74FCT543/A P54/74PCT543/A P54/74FCT544/A (P54/74PCT544/A) OCTAL REGISTERED TRANSCEIVER FEATURES • Function, Pinout, and Drive Compatible with the FCT and F Logic Outputs Meet Levels Required for CMOS Static RAM Low Power Standby Mode ■ FCT-A speed at 6.5ns max. (Com'l)

Contextual Info: P54/74PCT245/A—P54/74PCT545/A—P54/74PCT645/A OCTAL BIDIRECTIONAL TRANSCEIVERS WITH 3-STATE OUTPUTS FEATURES • Function, Pinout, Speed and Drive Compatible with the Fastest Bipolar Logic 64 mA Sink Current A & B Outputs Com’l , 48 mA (Mil) ■ “A” Versions for High Performance

Contextual Info: P54/74FCT543/A P54/74PCT543/A P54/74FCT544/A (P54/74PCT544/A) OCTAL REGISTERED TRANSCEIVER ¿ 4- FEATURES • Function, Pinout, and Drive Compatible with the FCT and F Logic

ED 83A

Contextual Info: B B A A A B B B A B A B A A B C A B B A CC A A B A A B A A A B B C C AA A C B A C B A A AB C B Glenair IPT SE Series Available Insert Arrangements BB B B B A D B B A D C 3 Contacts B C BB BB B C B B C A BBC A A DA B D A D A D CCAA C A A D C CA A C A E B A

Contextual Info: SIEM ENS 256K X HYB 514171BJ-50/-60/-70 16-Bit Dynamic RAM HYB 514171BJL-50/-60/-70 Low Power 256K x 16-Bit Dynamic RAM with Self Refresh Advanced Information Low Power dissipation max. 1045 mW active -50 version max. 935 mW active (-60 version) max. 880 mW active (-70 version)

511000B/BL-60

Abstract: hyb 511
Contextual Info: SIEMENS 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 5110OOB/BJ/BZ-60/-70/-80 HYB 511000BUBJL/BZL-60/-70 Advanced Information • 1 048 576 words by 1-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time HYB 511000B/BL-60

511000B-80

Abstract: hyb511000B 511000B/BL-70
Contextual Info: SIEMENS 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 511000B/BJ/BZ-60/-70/-80 HYB 511000BL/BJL/BZL-60/-70 Advanced Information • 1 048 576 words by 1-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time HYB 511000B/BL-60

j78 transistor

Abstract: F909 t7gc transistor F909 s659
Contextual Info: <>=2834&?2+2&.@44+ A4 0/20B&C''C !"#$%&"'& )*+,-,&./01234567/8+&9:;5%:<&!434*=40 ?4,30*D+*78 %59#Q=TU%#89:93F98#3)6948(69-#(#=>#@;36-A-#+&,#()*# %&'#3)6H#(#68.9#-.8I(:97EH.)6#/(:V(49"#&6#3-#/(86#HI# # -6()*(8*3[9#-.8I(:97EH.)6#=>#@;36-A-#89:93F98-"#

HM538253B

Abstract: HM538253BJ-10 HM538253BJ-7 HM538253BJ-8 HM538254B HM538254BJ-7 HM538254BJ-8 TMS34020 Hitachi DSA0015
Contextual Info: HM538253B Series HM538254B Series 262,144-word x 8-bit Multiport CMOS Video RAM Description The HM538253B/HM538254B is a 2-Mbit multiport video RAM equipped with a 256-kword × 8-bit dynamic RAM and a 512-word × 8-bit SAM full-sized SAM . Its RAM and SAM operate independently and

HM538253BTT-7

Abstract: Hitachi DSA00776 HM538253B HM538253BJ-10 HM538253BJ-7 HM538253BJ-8 HM538254B HM538254BJ-7 HM538254BJ-8 TMS34020
Contextual Info: HM538253B Series HM538254B Series 262,144-word x 8-bit Multiport CMOS Video RAM Rev. 0.0 Dec. 1, 1995 Description The HM538253B/HM538254B is a 2-Mbit multiport video RAM equipped with a 256-kword × 8-bit dynamic RAM and a 512-word × 8-bit SAM full-sized SAM . Its RAM and SAM operate independently

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

siemens hyb514171BJ

Contextual Info: SIEMENS 256K X 16-Bit Dynamic RAM HYB 514171BJ-50/-60/-70 Low Power 256K x 16-Bit Dynamic RAM with Self Refresh HYB 514171BJL-50/-60/-70 Advanced Information 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time

ST 9221

Contextual Info: DATE SYM REVISION RECORD 5 / 5 /O C - IS S U E D RECOMMENDED MOUNTING HOLE . 0 6 4 + 0 . 0 0 2 MATERIAL: , 0 0 0 3 ” MIN. P AR T NUMBER: 1 0 -922-1 -0 5 1 0-922-2 -0 5 1 0-922-3 -0 5 1 0-922-4 -0 5 bJ e = |= □o J = b =oJ 1 /2 HARD E LE C TR O- SO L DER

514256BZ-70

Abstract: 514256BJ-70 514256 CCC-13 514256b-70 514256b-60 BL6040
Contextual Info: SIE M E N S 256 K X 4 -B it D ynam ic RAM Low Pow er 256 K x 4-B it D ynam ic RAM HYB 514256B/BJ/BZ-60/-70/-80 HYB 514256BU B JL/BZL-60/-70 Advanced Information • • 262 144 words by 4-bit organization Fast access and cycle time 60 ns access time 110 ns cycle tim e HYB 514256B/BL-60

siemens EM 235 cn

Contextual Info: SIEMENS 256 K X 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM HYB 514256B/BJ-50/-60/-70 HYB 514256BL/BJL-50/-60/-70 Advanced Information VBB • 262 144 words by 4-bit organization • Single + 5 V ± 10 % supply with a built-in generator Output unlatched at cycle end allows two_

74fct245

Contextual Info: NATIONAL SEMICOND LOGIC blE ]> • bS01125 0D7S371 H3*) m CM EHNational t - s* - ? * * / ÆM Semiconductor 54FCT/74FCT245 Octal Bidirectional Transceiver with TRI-STATE Inputs/Outputs General Description Features The 'FCT245 contains eight non-inverting bidirectional buff­

HM538253BTT-7

Abstract: HM534253B DTH circuit diagram HM538253B HM538253BJ-10 HM538253BJ-7 HM538253BJ-8 HM538254B TMS34020 ct rac 70
Contextual Info: 2 M VRAM 256-kword x 8-bit Hyper Page Mode (HM538254B) LP EO Description HM538253B Series HM538254B Series E0163H10 (Ver. 1.0) (Previous ADE-203-264A/265 (Z) Jul. 6, 2001 (K) Features ro The HM538253B/HM538254B is a 2-Mbit multiport video RAM equipped with a 256-kword × 8-bit dynamic

TC514266

Contextual Info: PRELIMINARY 2 6 2 , 1 4 4 \ vCi <L- k 4 i ' T' L ; Y ' ; a !V":C ?, a w ! D ESC RIPTIO N T he "I C i i i -T 7. b i: * .„h? new g ^ r.crau o n dynam ic HAM organized 262,144 words by 4 bits. T he TC51.4-r;i-!BP.BJ,'BZ.“siF;' .• 1 : > TOSHIBA'S CMOS Silicon gate process technology as well as

OB35

Abstract: 511000BZ-60 BL-70 bzl60
Contextual Info: S IE M E N S 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 511000B/BJ/BZ-60/-70/-80 HYB 511000BL/BJL/BZL-60/-70 Advanced Inform ation • • 1 048 576 words by 1-bit organization Fast access and cycle time 60 ns access time 110 ns cycle time HYB 511000B/BL-60

HM538253BJ-7

Abstract: HM538253 HM538253BTT-7 HM538253B HM538253BJ-10 HM538253BJ-8 HM538254B HM538254BJ-7 TMS34020 HM538253BTT
Contextual Info: HM538253B Series HM538254B Series 262,144-word x 8-bit Multiport CMOS Video RAM Description The HM538253B/HM538254B is a 2-Mbit multiport video RAM equipped with a 256-kword × 8-bit dynamic RAM and a 512-word × 8-bit SAM full-sized SAM . Its RAM and SAM

P5501

Contextual Info: SIEMENS 256 K X 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM HYB 514256B/BJ-50/-60/-70 HYB 514256BL/BJL-50/-60/-70 A d v a n c e d In fo rm a tio n 2 62 144 w o rd s by 4 -b it o rg a n iz a tio n S in g le + 5 V ± 10 % su p p ly w ith a bu ilt-in f 'BB

T9GO

Abstract: T9G01200A 50A 450V SCR LT 428 T9GO 14 BP107 P-149 P-152
Contextual Info: MME7ZEX T9G0 1200A Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 P hâS B Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 A ' ' C o tltto l S C R M 1200 Amperes Average 2400 Volts

Contextual Info: P54/74FCT543T/AT/CT P54/74FCT544T/AT/CT OCTAL REGISTERED TRANSCEIVER FEATURES Function, Pinout and Drive Compatible with the FCT and F Logic Power-off disable feature FCT-C speed at 5.3ns max. Com'l FCT-A speed at 6.5ns max. (Com'l) Fully Compatible with TTL Input and Output