DGB DIODE Search Results

Contextual Info: OKAYA Electric America, Inc. SPECIFICATIONS PG-95014 Ver.0 PH-06005-005 DRAWING CODE RS480272T-4X3WQ-A-CTP PS320240T-004-I05 PS12032LRS-DGB-B01(Ver.0) (CAPACITIVE TP) SAMPLE CODE (This Code will be changed while mass production) MASS PRODUCTION CODE RG12032LRS-DGB-B

Contextual Info: OKAYA Electric America, Inc. SPECIFICATIONS DRAWING CODE PG-95014 Ver.0 PH-06005-005 SAMPLE CODE PS320240T-004-I05 PS12032LRS-DGB-B01(Ver.0) (This Code will be changed while mass production) MASS PRODUCTION CODE RG12032LRS-DGB-B RH320240T-004-IY3 RS800480T-5X0WN-A

Contextual Info: OKAYA Electric America, Inc. SPECIFICATIONS PG-95014 Ver.0 PH-06005-005 DTE-06098 (VER.0) DRAWING CODE PS320240T-004-I05 PS12032LRS-DGB-B01(Ver.0) PS240128WRM-AGA-I01Q SAMPLE CODE (This Code will be changed while mass production) MASS PRODUCTION CODE RG12032LRS-DGB-B

Contextual Info: OKAYA Electric America, Inc. SPECIFICATIONS DRAWING CODE PG-95014 Ver.0 PH-06005-005 SAMPLE CODE PS320240T-004-I05 PS12032LRS-DGB-B01(Ver.0) (This Code will be changed while mass production) MASS PRODUCTION CODE RG12032LRS-DGB-B RS800480T-7X0WQ-A RH320240T-004-IY3

Contextual Info: OKAYA Electric America, Inc. SPECIFICATIONS DRAWING CODE PG-95014 Ver.0 PH-06005-005 SAMPLE CODE PS320240T-004-I05 PS12032LRS-DGB-B01(Ver.0) (This Code will be changed while mass production) MASS PRODUCTION CODE RG12032LRS-DGB-B RS800480T-7x0WN-A RH320240T-004-IY3

Contextual Info: OKAYA Electric America, Inc. SPECIFICATIONS PG-95014 Ver.0 PH-06005-005 DTE-06098 (VER.0) DRAWING CODE PS320240T-004-I05 PS12032LRS-DGB-B01(Ver.0) PS240128WRM-AGA-I01Q SAMPLE CODE (This Code will be changed while mass production) MASS PRODUCTION CODE RG12032LRS-DGB-B

Contextual Info: OKAYA Electric America, Inc. SPECIFICATIONS DRAWING CODE PG-95014 Ver.0 PH-06005-005 DTE-06098 (VER.0) SAMPLE CODE PS320240T-004-I05 PS12032LRS-DGB-B01(Ver.0) RS800480T-7X0WP-1 PS240128WRM-AGA-I01Q (This Code will be changed while mass production) MASS PRODUCTION CODE

15N100

Contextual Info: PIXYS : MegaMOS FET IXTN 15N100 V DSS ID25 1000 V 15 A D 0.6 Q DS on N-Channel Enhancement Mode Symbol Test Conditions v Tj =25°Cto150°C 1000 V v DGB T, =25°C to 150° C; RGS= 10k£2 1000 V VGS VGSM Continuous ¿20 V Transient d30 V Us Tc =25°C 15 A

6953-B

Abstract: 7812A AH413 700201 CV2154 AH370 ML40150 DH 408 diode dmf 612 14094 b
Contextual Info: ML 4000 SERIES EQUIVALENT PARTS LIST The majority o f C.V. register and commercial microwave diodes can be provided depending on demand. M/A-COM Ltd also provides a second source of direct equivalents to other manufacturers devices, the majority o f which are approved for space use. A comprehensive equivalents list is provided below.

Contextual Info: Æ 7 SGS-THOMSON *7 £ liMD l^i[L[l@M RD[l 8 BYT 12-200-^400 FAST RECOVERY RECTIFIER DIODES • VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING SUITABLE APPLICATIONS: ■ FREE WHEELING DIODE IN CONVERTERS AND MOTOR CONTROL CIRCUITS

SK10GD126ET

Contextual Info: SK10GD126ET # , -. /0        Absolute Maximum Ratings Symbol Conditions IGBT 123 #4 , -. / % #4 , 6.7 / %9: 6-77 1 6. ' # , 87 / 66 ' 6; ' < -7 1 #4 , 6-. / 67 @ # , -. / -. ' # , 87 / 6A ' B7 ' %9:, -  %  1 , ;77 1= 1&2 > -7 1=

2SK2388

Contextual Info: TOSHIBA 2SK2388 Field Effect Transistor Unit in mm Silicon N Channel MOS Type tc-MOS IV i0±0.] 0U2±Q2 t :rt „o *1 2.7 ± 0.2 High Speed, High Current Switching, DC-DC Converter . Chopper Regulator and Motor Drive Applications Features • 4V Gate Drive

SK10GD126ET

Abstract: IGBT MODULE
Contextual Info: SK10GD126ET # , -. /0        Absolute Maximum Ratings Symbol Conditions IGBT 123 #4 , -. / % #4 , 6.7 / %9: 6-77 1 6. ' # , 87 / 66 ' 6; ' < -7 1 #4 , 6-. / 67 @ # , -. / -. ' # , 87 / 6A ' B7 ' %9:, -  %  1 , ;77 1= 1&2 > -7 1=

Contextual Info: BSP 315 SIPMOS Small-Signal Transistor Prelim inary D ata VDS = -50 V /D =-1.0 A ^DS on| = 0.8 Q • P channel • E nhancem ent mode • Package: SOT-223 ’ Type Ordering code for version in bulk Ordering code for version on 12-mm tape BSP 315 Q 62702 -S 07 5

Contextual Info: SK10GD126ET # , -. /0        Absolute Maximum Ratings Symbol Conditions IGBT 123 #4 , -. / % #4 , 6.7 / %9: 6-77 1 6. ' # , 87 / 66 ' 6; ' < -7 1 #4 , 6-. / 67 @ # , -. / -. ' # , 87 / 6A ' B7 ' %9:, -  % IGBT Module

2SK1345

Contextual Info: TOSHIBA 2SK1345 Field Effect Transistor Silicon N Channel MOS Type L2-t>MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications F e a tu re s • 4-Volt Gate Drive • Low Drain-Source ON Resistance “ ^ D S ( O N ) = 0.042£2 (Typ.)

MC3479C

Contextual Info: Æ * T 71» S G S -T H O M S O N IlflgesmiSTOMlES MC3479C S T E P P E R . SINGLE SUPPLY OPERATION + 7.2 V TO +16 V . 350 mA/ COIL DRIVE CAPABILITY . BUILT IN FAST PROTECTION DIODES • SELECTABLE CW/CCW AND FULL/HALF STEP OPERATION « SELECTABLE HIGH/LOW OUTPUT IMPED­

fccj

Abstract: IRLSZ34A T0-220F RS27n
Contextual Info: IRLSZ34A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ BVdss = 60 V Logic Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 jiA Max. @ VDS = 60V

Contextual Info: Standard Power MOSFETs BUZ 76 Füe Number 2264 N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3 A, 400 V TDS Ionl = 1 . 8 f i Features: • SOA is power-dissipation limited a Nanosecond switching speeds a Linear transfer characteristics

2SK2038

Abstract: Transistor TOSHIBA 2SK
Contextual Info: TOSHIBA 2SK2038 Field Effect Transistor U n it in m m Silicon N Channel MOS Type rc-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance • R ds (ON) = 1 (Typ-) • High Forward Transfer Adm ittance - Yfs' = 3.OS (Typ.)

2SK1917

Abstract: SiC POWER MOSFET 2SK1917-M ups electrical symbols A2266
Contextual Info: 2SK1917-M S IP M O S F U JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET ^ • Features SER IE S ■ Outline Drawings • High speed sw itching • Low o n-resistance • N o secondary breakdow n • Low driving p o w er • High voltage • Vc,s = ± 3 0 V G uarantee

BUK428-500B

Abstract: BUK428
Contextual Info: Ph ilips C o m p o n e n ts Data sheet status Product specification date of issue March 1991 BUK428-500B PowerMOS transistor GENERAL DESCRIPTION tsl-channel enhancem ent mode field-effect pow er transistor in a plastic full-pack envelope. The devicç is intended fo r use in

250M

Abstract: SSP4N90
Contextual Info: N-CHANNEL POWER MOSFETS SSP4N90 FEATURES • Low er R d s o n • Im proved in d u c tiv e ru ggedness • Fast s w itc h in g tim e s • R ugged po ly s ilic o n ga te cell s tru c tu re • L o w e r in p u t c a p a c ita n c e • E xtended safe o p e ra tin g area

Contextual Info: S IE M E N S TEMPFET BTS 903 Preliminary Data VDS l0 = -2 0 0 V = -3 .6 A ^DS on = ^*5 Q • • • • P channel Enhancement mode Temperature sensor with thyristor characteristic Package T O -2 2 0 /5 1) Observe circuit design hints (see chapter Technical Information)!