DG613DY Search Results

Contextual Info: DG611, DG612, DG613 Vishay Siliconix High-Speed, Low-Glitch D/CMOS Analog Switches DESCRIPTION FEATURES The DG611, DG612, DG613 feature high-speed lowcapacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-andhold applications.

AN207

Abstract: DG611 DG611DJ DG612 DG612DJ DG613
Contextual Info: DG611/612/613 High-Speed, Low-Glitch D/CMOS Analog Switches Features Benefits Applications D D D D D D D D D D D D D D D D D D D D D Fast Switching— tON: 12 ns Low Charge Injection: "2 pC Wide Bandwidth: 500 MHz 5-V CMOS Logic Compatible Low rDS on : 18 W

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

Contextual Info: DG611/612/613 V T v r • M / S iliconix V J A M e m b e r o f th e T b m ic G ro u p High-Speed, Low-Glitch D/CMOS Analog Switches Features Benefits Applications • • • • • • • • • • • • • • • • • • Fast Switching— to N : 12 ns

Contextual Info: DG611, DG612, DG613 Vishay Siliconix High-Speed, Low-Glitch D/CMOS Analog Switches DESCRIPTION FEATURES The DG611, DG612, DG613 feature high-speed lowcapacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-andhold applications.

AN207

Abstract: DG611 DG611DJ DG611DY DG612 DG612DJ DG612DY DG613
Contextual Info: DG611/612/613 Siliconix HighĆSpeed, LowĆGlitch D/CMOS Analog Switches Features Benefits Applications D D D D D D D D D D D D D D D D D D D D D Fast SwitchingĊ tON: 12 ns Low Charge Injection: "2 pC Wide Bandwidth: 500 MHz 5ĆV CMOS Logic Compatible Low rDS on : 18 W

Contextual Info: DG613-DY IL16 * D/CMOS QUAD ANALOG SWITCHES – TOP VIEW – IN2 16 D2 15 S2 14 13 12 V + VL V(–) 1 IN1 2 D1 3 S1 S3 11 4 D3 10 V(+): +5V to +21V V(–): –10V to 0V VL: +4V to V(+) GND 5 6 S4 7 D4 TRUTH TABLE LOGIC 1 S1,S4 OFF ON S2,S3 ON OFF IN3

Contextual Info: DG611, DG612, DG613 Vishay Siliconix High-Speed, Low-Glitch D/CMOS Analog Switches DESCRIPTION FEATURES The DG611, DG612, DG613 feature high-speed lowcapacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-andhold applications.

dual jfet transistor array

Abstract: datasheet d 442 dg612ak si581 DG612DJ Siliconix JFET Dual DG611DY 600 V logic level fet DG613 DPDT 6 terminal switch internal diagram
Contextual Info: DG611/612/613 Siliconix HighĆSpeed, LowĆGlitch D/CMOS Analog Switches Features Benefits Applications D D D D D D D D D D D D D D D D D D D D D Fast Switching— tON: 12 ns Low Charge Injection: "2 pC Wide Bandwidth: 500 MHz 5-V CMOS Logic Compatible Low rDS on : 18 W

DG613DY

Abstract: DG613DY-E3 AN207 DG611 DG611DJ DG611DJ-E3 DG612 DG612DJ DG613
Contextual Info: DG611/612/613 Vishay Siliconix High-Speed, Low-Glitch D/CMOS Analog Switches DESCRIPTION FEATURES The DG611/612/613 feature high-speed low-capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold

DG612DY

Abstract: AN207 DG611 DG611DJ DG611DJ-E3 DG612 DG612DJ DG613 DG611DY-T1-E3 S-71155
Contextual Info: DG611/612/613 Vishay Siliconix High-Speed, Low-Glitch D/CMOS Analog Switches DESCRIPTION FEATURES The DG611/612/613 feature high-speed low-capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold

5962-9325501M2A

Abstract: 5962-9325502 ANALOG SWITCH SPST DG613DJ
Contextual Info: DG611/612/613 Vishay Siliconix High-Speed, Low-Glitch D/CMOS Analog Switches FEATURES BENEFITS APPLICATIO NS • • • • • • • • Improved Data Throughput • Minimal Switching Transients • Improved System Performance • Easily Interfaced • Low Insertion Loss

142s1

Abstract: AN207 DG611 DG611DJ DG611DJ-E3 DG611DY DG612 DG612DJ DG613 DG612DY-T1
Contextual Info: DG611, DG612, DG613 Vishay Siliconix High-Speed, Low-Glitch D/CMOS Analog Switches DESCRIPTION FEATURES The DG611, DG612, DG613 feature high-speed lowcapacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-andhold applications.

P517c

Abstract: AN207 DG611 DG611DJ DG611DY DG612 DG612DJ DG612DY DG613 "N-Channel JFET", 350 v
Contextual Info: Tem ic DG611/612/613 Siliconix High-Speed, Low-Glitch D/CMOS Analog Switches Features Benefits Applications • • • • • • • • • • • • • • • • • • • • • Fast Switching— toN: 12 ns Low Charge Injection: ± 2 pC Wide Bandwidth: 500 MHz

dg612ak

Abstract: 5962-9325501M2A DG611DJ DG611DY DG612 DG612DJ DG613 AN207 DG611
Contextual Info: DG611/612/613 Vishay Siliconix High-Speed, Low-Glitch D/CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D D D D D Fast Switching— tON: 12 ns Low Charge Injection: "2 pC Wide Bandwidth: 500 MHz 5-V CMOS Logic Compatible

TEMIC K153P

Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Contextual Info: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2

AN207

Abstract: DG612DY DG611 DG611DJ DG611DY DG612 DG612DJ DG613 5962-9325502M2A 5962-9325501M2A
Contextual Info: DG611/612/613 Vishay Siliconix High-Speed, Low-Glitch D/CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D D D D D Fast Switching— tON: 12 ns Low Charge Injection: "2 pC Wide Bandwidth: 500 MHz 5-V CMOS Logic Compatible

AN207

Abstract: DG611 DG611DJ DG612 DG612DJ DG613 FAST DMOS FET Switches Si581
Contextual Info: DG611/612/613 High-Speed, Low-Glitch D/CMOS Analog Switches Features Benefits Applications D D D D D D D D D D D D D D D D D D D D D Fast Switching— tON: 12 ns Low Charge Injection: "2 pC Wide Bandwidth: 500 MHz 5-V CMOS Logic Compatible Low rDS on : 18 W

TCMIC

Abstract: FET J202 AN207 DG611 DG611DJ DG611DY DG612 DG612DJ DG613
Contextual Info: S iE c o n ix DG611/612/613 A M em b er o f th e T E M ic G ro u p High-Speed, Low-Glitch D/CMOS Analog Switches Features Benefits Applications • • • • • • • • • • • F a s t S a m p le -a n d -H o ld s • S y n c h ro n o u s D e m o d u la to rs

Siliconix JFET Dual

Abstract: 5962-9325502 s4 vishay AN207 DG611 DG611DJ DG611DY DG612 DG612DJ DG613
Contextual Info: DG611/612/613 Vishay Siliconix High-Speed, Low-Glitch D/CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D D D D D Fast Switching— tON: 12 ns Low Charge Injection: "2 pC Wide Bandwidth: 500 MHz 5-V CMOS Logic Compatible

Contextual Info: DG611, DG612, DG613 Vishay Siliconix High-Speed, Low-Glitch D/CMOS Analog Switches DESCRIPTION FEATURES The DG611, DG612, DG613 feature high-speed lowcapacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-andhold applications.

AN207

Abstract: DG611 DG611DJ DG611DY DG612 DG612DJ DG613 KEY32
Contextual Info: DG611/612/613 Vishay Siliconix High-Speed, Low-Glitch D/CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D D D D D Fast Switching— tON: 12 ns Low Charge Injection: "2 pC Wide Bandwidth: 500 MHz 5-V CMOS Logic Compatible

Contextual Info: Tem ic DG611/612/613 Semiconductors High-Speed, Low-Glitch D/CMOS Analog Switches Features Benefits Applications • • • • • • • • • • • • • • • • • • F ast Sw itching— Io n : 12 ns L ow C harge Injection: ± 2 pC W ide B andw idth: 500 M H z