DG2F Search Results

LR7189

Contextual Info: blE AMP INCORPORATE» □ 7^7312 DG2fciG5S 03^ • Catalog 65359 Issued 8-92 Surface-Mount Receptacles (AMPMODU) Dimensioning: Dimensions are in inches and millimeters. Values in brackets are metric equivalents. Receptacle Assemblies Double Row, .100 x .100 [2.54 x 2.54] Centers

Contextual Info: TOSHIBA ^ 0* 17 2 40 OOHfiSDM ñbO • - THM3640F5BS/BSG-60/70 PRELIMINARY 4,194,304 WORDS X 36 BIT EDO DYNAMIC RAM MODULE Description The THM3640F5BS/BSG is a 4,194,304 words by 36 bits Hyper Page Mode (EDO) dynamic RAM module which is assem­

Contextual Info: TOSHIBA cIOti7 2 4 a 0 0 2 ô b fl2 131 TC59R1809VK/HK PRELIMINARY 2,097,152 WORD x 9-BIT RAMBUS DYNAMIC RAM Description TheTC59R1809VK/HK Rambus Dynamic RAM RDRAM is a next-generation high-speed CMOS DRAM with a 2,097,152 x 9-bit organization and built-in slave logic. The 36,864 sense amps of the DRAM core are used as cache to achieve data

Contextual Info: P D - 9.1268F International IQ R Rectifier IRF7506 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual P-Channel MOSFET • Very Small SOIC Package • Low Profile <1.1 mm • Available in Tape & Reel • Fast Switching

fll57

Contextual Info: Data Sheet October 1997 microelectronics group Lucent Technologies Bell Labs Innovations T7901 ISA Single Wide Area Connection ISA-SWAC Device Features • One wide area connection port that can be config­ ured as a basic rate ISDN TE or NT or as a syn­

Contextual Info: International S Rectifier Preliminary Data Sheet No. PD-6.102A IR2233 3-PHASE BRIDGE DRIVER Features Product Summary • Floating channel designed fo r bootstrap operation Fully operational to + 1200V Tolerant to negative transient voltage dV/dt im m une ■ G ate drive supply range from 10 to 20V

Contextual Info: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7SLU04F/FU INVERTER The TC7SLU04 is a low voltage operative C2MOS INVERTER fabricated with silicon gate C2MOS technology. Operating voltage VGc(0pr is 1 ~ 3V equivalent to 1 pc or 2pcs of dry cell battery and it achieves low power dissipation.

Z80A CPU

Abstract: Z80A
Contextual Info: CPU Us e r ’s Manual <S*2iL0E Chapter 5 _ Z 8 0 In s t r u c t io n D e s c r ip t io n 5.0 INTRODUCTION: Z80 ASSEMBLY LANGUAGE The assembly language provides a means for writing a program without having to be concerned with actual

Contextual Info: MITSUBISHI LSIs M5M417800CJ,TP-5,-6,-7, -5S,-6S,-7S FAST PAGE MODE 16777216-BIT 2097152-WORD BY 8-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family of 2097152-w ord by 8-bit dynamic RAMs, fabricated with the high performance C M O S process, and is ideal

Contextual Info: i s E* C yi JULY 1996 ^ DS4580-1.4 ITC14407516D POWERLINE N-CHANNELIGBT CHIP TYPICAL KEY PARAMETERS 25’ C VCES 1600V 'c(co^) 75A V 3.3V * CE(sat) FEATURES • n - Channel. ■ Enhancement Mode. ■ High Input Impedance. ■ High Switching Speed. ■ Latch-Free Operation.

Contextual Info: P D - 9 .1 5 2 3 International IQR Rectifier PRELIMINARY IRF9530NS/L HEXFET Power MOSFET • • • • • • • Advanced Process Technology Surface Mount IRF9530NS Low-profile through-hole (IRF9530NL) 175°C Operating Temperature Fast Switching P-Channel

Contextual Info: P D - 9 .1 6 1 0 A International IO R Rectifier IRFR/U5505 PRELIMINARY HEXFET Power MOSFET • Ultra Low On-Resistance • P-Channel • Surface Mount IRFR5505 • Straight Lead (IRFU5505) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated

Contextual Info: IDT74FST163214 ADVANCE INFORMATION 12-BIT 3:1 MUX/DEMUX SWITCH Integrated Device Technology, Inc. The FST163214 belong to IDT's family of Bus switches. Bus switch devices perform the function of connecting or isolating two ports without providing any inherent current sink

Contextual Info: Preliminary Data Sheet September 1997 m i cro e le ctr o n ic s group Lucent Technologies Bell Labs Innovations LUC3M08 Eight Ethernet MACs for 10/100 Mbits/s Frame Switching Features • Eight 10/100 Mbits/s Ethernet MACs integrated together with separate transmit and receive port

IRF9511

Abstract: irf9510
Contextual Info: P-CHANNEL POWER MOSFETS IRF9510/9511 FEATURES TO-220 • Lower R o s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

30BQ060

Abstract: 1/carrier 30bq060
Contextual Info: International 1 9 Rectifier P D - 2 .4 4 0 A 30BQ060 SCHOTTKY RECTIFIER 3 Amp Major Ratings and Characteristics Characteristics Rectangular waveform I f <a v V rrm Ifs m Vf @ tp = 5 |js sine @ 3.0Apk, Tj = 125°C Tj 30BQ060 Units 3.0 A 60 V 1200 A 0.52 V

Contextual Info: P-CHANNEL POWER MOSFETS IRF9520/9521 FEATURES • L o w e r R ds o n • Im proved inductive ruggedness • Fast sw itching tim es • R u gge d polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Im proved high temperature reliability

MCD195

Abstract: UHF POWER TRANSISTOR UHF POWER BLT53 MCD201
Contextual Info: bTE T> N AUER P H I L I P S / D I S C R E T E bbS3^3]i GQ2Ö744 Ö4fl M A P X tjciiiiwudUUCIOrS _Product speciricauon UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures

Contextual Info: m 'iD,i754fi DD2fi73C1 C141 m- TOSHIBA TC59R0808HK PRELIMINARY 1,048,576 WORD x 8 BITS RAMBUS DYNAMIC RAM Description The TC59R0808HK Rambus Dynamic RAM DRAM is a next-generation high-speed CMOS DRAM with a 1,048,576 x 8 bits organization and built-in slave logic. The 16,384 sense amps of the DRAM core are used as cache to achieve data

JQC - 3F -1C

Abstract: D02fc DSASL TC8563 hard disk toshiba
Contextual Info: TOSHIBA UC/UP b4E J> • ^0=1724^ Q02b43B 3bS m i O Z 3 HARD DISK CONTROLLER | | TC8561F l TENTATIVE Hard Disk Controller 1. GENERAL DESCRIPTION The T C 8 5 6 1 F (HDC) is a h igh efficiency 108 73 h a rd d isk c o n tro lle r w ith a b u ilt-in d is k controller, sy stem in terface, b u ffe r m em ory

Contextual Info: 5Ë GEC P L E S S E Y S E M I C O N D U C T O R S e p te m b e r 1996 S DS4219-2.3 DFB54 FAST RECOVERY DIODE KEY PARAMETERS V RRM 3500V 2135A Jf AV 20000A FSM 1500|lC Qr APPLICATIONS • Power Supplies. ■ Freewheel Diode. ■ Battery Chargers. ■ D.C. Motor Control.

Contextual Info: N-CHANNEL POWER MOSFETS IRF720/721 FEATURES • Lower R d s ON • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: HITACHI/ <NCU/HPU 5DE » • MMTbSDM GGSTTÔT M? 5 ■ H I T 3 Section 1 Overview 1.1 Features The H8/520 is an original Hitachi CMOS microcomputer unit MCU) comprising a high-performance CPU core plus a full range of supporting functions—an entire system integrated onto a single chip.

IRF720

Abstract: K020 250M IRF721 721 diode
Contextual Info: N-CHANNEL POWER MOSFETS IRF720/721 FEATURES • Lower R d s ON • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability