75307
Abstract: PTB23001X PTB23003X PTB23005X T-33-O 
 
Contextual Info: M ObE D N AMER P H I L I P S / D I S C R E T E DG15Cm ^ 5 3 ^ 3 1 T • PTB23001X PTB23003X PTB23005X T  3 3 T - -0 *7 MICROWAVE POWER TRANSISTORS N-P-N silicon transistors for use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide
 
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OCR Scan
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iki53ci31 
DG15Cm
PTB23001X
PTB23003X
PTB23005X 
G01S1Q3 
PTB23001X 
75307
PTB23005X
T-33-O
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