DFF50B12
Abstract: DFF20B12 DFD05TR DFG1C8 DFC15TN DFC15TR DFD05TB DFD05TC DFD05TE DFF50B
Contextual Info: Vrkm V 1 20 140 140 140 140 70 70 70 60 150 150 j 150 j 150 j m TCC) m$ I f (A) 1200 1500 100 200 1000 1200 400 600 800 1500 1700 100 200 400 600 800 1000 1000 1200 1000 1200 800 100 200 100 200 400 600 800 400 1000 600 800 600 800 i , 1 TCC) trr<300ns trr<300ns
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DFG3A4
Abstract: DFD05TR DFF50B12 DFC15TN DFC15TR DFD05TB DFD05TC DFD05TE DFD05TG DFD05TJ
Contextual Info: Vrkm V 1 1200 1500 ! 1000 1200 100 200 400 600 800 1500 1700 100 200 3 *n —3 * 20 140 140 140 140 150 j 150 j 150 j TCC) m$ I f (A) 1200 1500 100 200 1000 1200 400 600 800 1500 1700 100 200 400 600 800 1000 1000 1200 1000 1200 800 100 200 100 200 400 600
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dfc15tn300nsdfc15trdfd05tb+8150nsdfd05tcdfd05tedfg3a4dfd05trdff50b12dfd05tgdfd05tj
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EN2373
Abstract: DFD05TB DFD05TL DFD05T DFD05TC DFD05TE DFD05TG DFD05TJ DFD05TN DFD05TR
Contextual Info: Ordering number:EN2373 DFD05T Diffused Junction Type Silicon Diode 0.5A Power Rectifier Features Package Dimensions • High-speed switching use. · Plastic molded structure. · Reverse recovery time trr=0.15µs max B, C, E, G . trr=0.3µs max (J, L, N, R, T).
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DFD05TR
Abstract: DFC15TN DFC15TR DFD05TB DFD05TC DFD05TE DFD05TG DFD05TJ DFD05TL DFD05TN
Contextual Info: Vrkm V 1 20 140 140 140 140 70 70 70 60 150 150 j 150 j 150 j m TCC) m$ I f (A) 1200 1500 100 200 1000 1200 400 600 800 1500 1700 100 200 400 600 800 1000 1000 1200 1000 1200 800 100 200 100 200 400 600 800 400 1000 600 800 600 800 i , 1 TCC) trr<300ns trr<300ns
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DFG1C8
Abstract: DFC15TN DFC15TR DFD05TB DFD05TC DFD05TE DFD05TG DFD05TJ DFD05TL DFD05TN
Contextual Info: 1 ! Io .If* « I A a f TCC) 100 200 1500 1200 400 600 800 1000 1200 1500 1700 100 200 400 600 800 1000 1000 1200 1000 1200 800 100 200 400 100 200 600 800 400 1000 600 800 600 800 i , 1 fi s fi s fi s & m |S TCC) trr<300ns trr<300ns trr<150ns trr<150ns 1 trr<150ns
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DFD05T
Abstract: DFD05TB DFD05TC DFD05TE DFD05TG DFD05TJ DFD05TL DFD05TN DFD05TR
Contextual Info: Ordering number : EN2373 D F D 05T f No. 2373 SAm o Diffused Junction Type Silicon Diode i 0.5A Power Rectifier Features • . High-speed switching use . Plastic molded structure . Reverse recovery time trr=0.15us max B,C,E,G trr=0.3us max (J,L,N,R,T) . Peak reverse voltage V j ^ - 1 0 0 to -1700V
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DFH10TC
Abstract: 12FLA GFB30G DFB20TL DFD30TG gfb30b DFD30TE DFB20TB DSM10C DFD05TB
Contextual Info: SANYO SEMICONDUCTOR CORP M E t | T W O ?!. 0002511 T ~ 0¡-0{ S | T - 0 3 -01 GENERAL-PURPOSE RECTIFIERS HP . 200 . 400 . fe lt 600 Io(A) r ~ ; Remarks’ m 0DSM1OC 1.0 ODSMI0E Surface mount type 25 ÔDSM10G ^ A ' HIGH-SPEED RECTIFIERS (COAXIAL) X V rm(V)
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DFD30TE
Abstract: DFD05TR DFF20B12 DFC15TN DFC15TR DFD05TB DFD05TC DFD05TE DFD05TG DFD05TJ
Contextual Info: Vrkm V 1 20 140 140 140 140 70 70 70 60 150 150 j 150 j 150 j m TCC) m$ I f (A) 1200 1500 100 200 1000 1200 400 600 800 1500 1700 100 200 400 600 800 1000 1000 1200 1000 1200 800 100 200 100 200 400 600 800 400 1000 600 800 600 800 i , 1 TCC) trr<300ns trr<300ns
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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