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onsemi


onsemi MMDF3N02HDR2G - Tape and Reel (Alt: MMDF3N02HDR2G)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	MMDF3N02HDR2G	Tape & Reel			2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	MMDF3N02HDR2G		10,835			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi MMDF3N02HDR2 - Tape and Reel (Alt: MMDF3N02HDR2)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	MMDF3N02HDR2	Tape & Reel		35 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Bristol Electronics	MMDF3N02HDR2		25			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Component Electronics, Inc	MMDF3N02HDR2		4			1 $0.77 10 $0.77 100 $0.58 1000 $0.50 10000 $0.50	Buy Now

DF3N02H Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
D3N02 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M DF3N02HD Medium Power Surface Mount Products M otorola Preferred D « vic * TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS RDS on = 0.090 OHM MiniMOS™ devices are an advanced series of power MOSFETs	OCR Scan	df3n02hd df3n02h d3n02	PDF
Contextual Info: MOTOROLA Order this document by DF3N02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F 3N 02 H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs	OCR Scan	mmdf3n02hd/d	PDF
1093 8pin Contextual Info: um TECHNOLOGY 1/ F€nTUR€S • Operates from 1.8V to 6V ■ 0.01 \|iA Standby Current ■ 95nA Operating Current per Channel at 3.3V ■ Fully Enhances N-Channel Switches ■ No External Charge Pump Components ■ Built-In Gate Voltage Clamps ■ Easily Protected Against Supply Transients	OCR Scan	ltc1163 /ltc1165 ltc1163/ltc1165 ltc1165 +43055el td3055el j680q 1093 8pin	PDF
1000C Abstract: HDTMOS Motorola DG-1000C Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA - Product Preview HDTMOSTM E=FETTM High Energy Power FET N=Channel Enhancement=Mode Silicon Gate This advanced high-cell density HDTMOS E-FET is designed to withstand high energy in the avalanche and commutation modes.	Original	df3n02hd 1000c hdtmos motorola dg-1000c	PDF
MSC1621 Abstract: Sj85a MRF9331 MMFT6661 2SD601R TLP655G cr708A 8C807-16 2SD601 R MBR931 Contextual Info: Alphanumeric Index and Cross Reference T he following table represents a cross-reference guide for surface mount packages which are m anufactured by Motorola. W here the M otorola part num ber differs from the industry part number, the M otorola device is a “form, fit and function" replacem ent for the	OCR Scan	5smc15at3 5smc16at3 5smc18at3 5smc20at3 +165smc22at3 5smc24at3 5smc27at3 5smc30at3 5smc33at3 5smc36at3 msc1621 sj85a mrf9331 mmft6661 2sd601r tlp655g cr708a 8c807-16 2sd601 r mbr931	PDF