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DEV101 Datasheets (3)

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SparkFun Electronics

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
DEV-10116		SparkFun Electronics	Development Boards, Kits, Programmers - Evaluation Boards - Embedded - MCU, DSP - ATMEGA328V 8MHZ XBEESOCKET	Original	PDF	32.04MB
DEV-10172		SparkFun Electronics	Maker/DIY, Educational - Wearables - CONDUCTIVE RIBBON 3-COND 1YRD	Original	PDF	379.11KB
DEV-10182		SparkFun Electronics	Development Boards, Kits, Programmers - Evaluation Boards - Expansion Boards, Daughter Cards - MONSTER MOTO SHIELD	Original	PDF	112.13KB

DEV101 Price and Stock

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SparkFun Electronics


SparkFun Electronics DEV-10116 Development Boards & Kits - AVR Arduino Fio
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	DEV-10116		1			1 $30.95 10 $30.95 100 $30.95 1000 $30.95 10000 $30.95	Buy Now
Onlinecomponents.com	DEV-10116					1 $40.02 10 $35.62 100 $31.71 1000 $30.54 10000 $30.54	Buy Now
Master Electronics	DEV-10116					1 $40.02 10 $35.62 100 $31.71 1000 $30.54 10000 $30.54	Buy Now

DEV101 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NEC71000 Abstract: NEC710 MWT-7 Contextual Info: TECHNICAL NOTE DEV101 M ic r o W a v e T echno lo g y REPLACEMENT OF NEC710 GaAs FET CHIPS WITH THE MwT-7 The MwT-7 0.25 micron gate length MESFET chip is designed for low-noise figure with high associated gain and is ideal for broad-band or narrow-band balanced amplifier	OCR Scan	DEV101 NEC710 NEC71000. NEC71000 6-18GHz MWT-7	PDF
NEC710 Abstract: NEC71000 DEV101 REF12 MWT-7 MWT-7 MICROWAVE Contextual Info: TECHNICAL NOTE DEV101 M ic r o W a v e T e c h n o lo g y REPLACEMENT OF NEC710 GaAs FET CHIPS WITH THE MwT-7 The MwT-7 0.25 micron gate length MESFET chip is designed for iow-noise figure with high associated gain and is ideal for broad-band or narrow-band balanced amplifier	OCR Scan	DEV101 NEC710 NEC71000. NEC71000 0000GHz 5000GHz 000GHz 000GHz 6-18GHz REF12 MWT-7 MWT-7 MICROWAVE	PDF
KPL 3009 Abstract: diode 1N30 jtp 87 TL 8H3 PDI 45A pj 75 sx 34 ANI 1015 l8510 cv zxxx SSXX Contextual Info: MIL-M-38510/45B 5 April 1984 SUPERSEDING QUALIFICATION REQUIREMENTS REMOVED MIL-M-38510/45A 24 M a y 1 9 8 2 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, TTL, LOW POWER, BISTABLE LATCHES, MONOLITHIC SILICON [Tn ACTIVE FOR NEW DESIGN AFTER DATE OF THIS REVISION.\|	OCR Scan	MIL-M-38510/45B MIL-M-38510/45A mil-m-38510, 93L08 KPL 3009 diode 1N30 jtp 87 TL 8H3 PDI 45A pj 75 sx 34 ANI 1015 l8510 cv zxxx SSXX	PDF
NEC 710 Abstract: DEV101 Contextual Info: k\fBm M ic r o w a v e T e c h n o l o g y MwT-H7 32 GHz Medium Power/High Gain AIGaAs/lnGaAs PHEMT \|<-50 • • • • • ->\| ^ -5 0 ->\| +21.5 dBm OUTPUT POWER AT 12 GHz EXCELLENT FOR HIGH GAIN AND MEDIUM POWER APPLICATIONS 0.3 MICRON REFRACTORY METAL/GOLD GATE	OCR Scan		PDF
MwT-770 Abstract: MWT7HP MWT-7 lsoj Contextual Info: MwT-7 26 GHz Medium Power GaAs FET M ic r o w a v e T e c h n o l o g y Units in jim • • • • • +20 dBm OUTPUT POWER AT 12 GHz EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR APPLICATIONS 0.3 MICRON REFRACTORY METAL/GOLD GATE 250 MICRON GATE WIDTH CHOICE OF CHIP AND TWO	OCR Scan		PDF
Contextual Info: MwT-S7 u s M ic r o w a v e 18 GHz High Gain, Low Noise GaAs FET a techno lo gy àk • HIGH AVAILABLE GAIN WHEN BIASED FOR LOW-NOISE • EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR BUFFER APPUCATIONS • 0.3 MICRON REFRACTORY METAL7GOLD GATE • 250 MICRON GATE WIDTH	OCR Scan	I4-50	PDF