DETECTOR METAL GOLD Search Results

DDC2354-000

Abstract: DDC2354-250 CDC7630-000 CDC7631-000 DDC2353-000 DDC2353-250
Contextual Info: DATA SHEET Zero Bias Silicon Schottky Barrier Detector Diodes Features ● ● High sensitivity Low video impedance Description Skyworks series of packaged, beam-lead and chip zero bias Schottky barrier detector diodes are designed for applications through K band. The choice of barrier metal and process

AML3501

Abstract: k and ka band radar detector AMP-90 AMP3001 ADN16 KA band diode detector waveguide ADN3002 AMH3001
Contextual Info: 0258354 ADVANCED SEMICONDUCTOR 92D 0 0 1 0 6 D 7• '-¿ ? 7 -ö 7 ]>E|0ESa3SM OOOOlOt, 7 | SCHOTTKY BARRIER MIXER AND DETECTOR DIODES ASI’s Schottky Barrier Mixer and Detector Diodes are manufactured by the deposition of a suitable barrier metal on an epitaxial silicon layer to

LED890-PD010_40D52

Contextual Info: LED890/PD010-40D52 metal can sealed PD monitoring high power LED LED890/PD010-40D52 consists of a GaAlAs LED 890nm and a Si-PD mounted onTO-18 stem hermetically sealed with a glass flat can, and is designed to monitor reflected light through detector for controlling its

LED810-PD010_40D52

Abstract: IR LED 810 nm
Contextual Info: LED810/PD010-40D52 metal can sealed PD monitoring high power LED LED810/PD010-40D52 consists of a GaAlAs LED 810 nm and a Si-PD mounted onTO-18 stem hermetically sealed with a glass flat can, and is designed to monitor reflected light through detector for controlling its

Contextual Info: epitex Φ5 STEM LED/PD Opto-Device & Custom LED L830/PD010-40D52 metal can sealed PD monitering high power LED L830/PD010-40D52 consists of a GaAlAs LED 830nm and a Si-PD mounted onTO-18 stem hermeticaly sealed with a glass flat can, and is designed to moniter reflected light through detector for

Contextual Info: epitex Opto-Device & Custom LED L810/PD010-40D52 Φ5 STEM LED/PD metal can sealed PD monitering high power LED L810/PD010-40D52 consists of a GaAlAs LED 810nm and a Si-PD mounted onTO-18 stem hermeticaly sealed with a glass flat can, and is designed to moniter reflected light through detector for

1N23 diode

Abstract: SINGLE ENDED MIXER 1N23 ALPHA 1N23 Diode Holder surface mount zero-bias detector diode silicon di for microwave diode mixer x-band motion detector metal diode Silicon Point Contact Mixer Diodes zero bias diode
Contextual Info: Application Note 80800: Mixer and Detector Diodes 2. BONDED CONTACT This construction features a gold wire bonded from the rim of the package to a bonding pad on the chip and then to the rim opposite the first bond. A cap is then soldered to this rim thus completing the assembly and

gold detector circuit free

Abstract: lead selenide 5638C 5658C pi metal detector 5637C 5657C 5737C 5757C 5933C
Contextual Info: Description Infrared Industries, Inc. Lead Selenide PbSe detectors are thin film photoconductors which are chemi­ cally deposited onto a quartz sub­ strate. Photolithographic techniques are used to define the active areas. Gold electrodes provide noise-free

diode hp 2800 SMD

Abstract: diode hp 2800 smd schottky diode T4 HSMP-2810 gold metal detectors diode hp 2810 HSMS-2862 TAG 9101 Waveform Clipping With Schottky diode hp 5082-2751
Contextual Info: Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest Hewlett-Packard authorized distributor or representative. Technical information is also available on the WWW at: www.hp.com/go/rf

Light Detector laser

Abstract: short distance measurement ir infrared diode
Contextual Info: Opto-semiconductors Condensed Catalog HAMAMATSU PHOTONICS K.K. Our unique photonics technology delivers highly sophisticated opto-semiconductors with high-sensitivity and high-speed response. Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that

J15D

Abstract: J15D16-M204-S01M-60 W1 466C DE1M J15D14 J15D14-M204-S500U-60 J15-D 5-3CN-S01M gold metal detectors PA-101
Contextual Info: Mercury Cadmium Telluride Detectors ISO 9001 Certified Distributor: Laser Components GmbH, Germany, Phone: 0049 0 8142 28640, www.lasercomponents.com J15 Mercury Cadmium Telluride Detectors (2 to 26 µm) General Detector Bias and Operating Circuit D* and Responsivity vs. Bias

ic 555 use with metal detector

Abstract: DVD optical pick-up assembly CD laser pickup assembly bolometer detector Light Detector laser
Contextual Info: Introduction CHAPTER 01 1 Light and opto-semiconductors 1-1 Light 1-2 Opto-semiconductors 2 Opto-semiconductor lineup 3 Manufacturing process of opto-semiconductors 1 Introduction 1. Light and opto-semiconductors 1-1 Light Definition of light Light, like radio waves, is a type of electromagnetic wave.

gold metal detectors

Abstract: IN5711 in5711 equivalent diode ring mixer PN Junction Diode oscillator Metal Detector doppler radar p-n junction diode digital metal detector Silicon Point Contact Mixer Diodes
Contextual Info: Schottky Barrier Diodes Characteristics A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor. The resulting non-linear diode is similar to point contact diodes and p-n junction diodes. The

gold detector circuit free

Abstract: gold metal detectors metal detector schematic gold detectors circuit CDB7619-000 gold detector circuit drawing free circuits metal detector Surface Mount RF Schottky Barrier Diodes metal detector CDC7630-000
Contextual Info: Applications • Mixer and detector Features • Low capacitance for usage beyond 40 GHz • ZBD and low barrier designs • P-type and N-type junctions • Large bond pad chip design • Chip products are Skyworks Green Silicon Schottky Diodes Skyworks broad product portfolio includes Schottky diodes as packaged and bondable

Mixer and Detector Diodes

Abstract: X-Band Motion Detector "zero-bias schottky diode" ST Low Forward Voltage Schottky Diode gold metal detectors VF-8Z microwave motion sensors balun diode mixer motion sensor doppler x band diode detector waveguide
Contextual Info: APPLICATION NOTE Mixer and Detector Diodes Surface Barrier Diodes Electrical Characteristics and Physics of Schottky Barriers Most people who use diodes are more familiar with junction devices than with the surface barrier diodes commonly used in mixer and detector circuits. In a junction diode the rectifying

IN5711

Abstract: Silicon Point Contact Mixer Diodes Microwave zero bias detector diodes
Contextual Info: W O ñ H EW LETT' 1"KM PACKARD Schottky Barrier Diodes C haracteristics A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor. The resulting non-linear diode is similar to point contact diodes

HOA1395

Abstract: Infrared Phototransistor
Contextual Info: Infrared Sensors Line Guide Solid, sensitive solutions. Optoelectronics integrates optical principles and semi-conductor electronics — the inter-conversion of electricity to light. In electronic systems where feedback and control systems are common, these infrared sensors are often

HOA1395

Abstract: dual Phototransistor mouse ACTIVE INFRARED MOTION DETECTOR TO46 lens phototransistor mouse Optical tachometer IR SENSOR wheel mouse HOA2498 HOA0149 HLC2705 mouse photodetector se3470
Contextual Info: Infrared Sensors Line Guide Solid, sensitive solutions. Optoelectronics integrates optical principles and semi-conductor electronics — the inter-conversion of electricity to light. In electronic systems where feedback and control systems are common, these infrared sensors are often

Contextual Info: MADS-011010-1419 Schottky Zero Bias Detector Diode Chip Absolute Maximum Ratings 1,2 Features P-Type Schottky Diode Can be used Without External DC Bias Large Bondable Contact RoHs Compliant Available in Chip Form ODS-1419 Can be Mounted with Solder or Conductive Epoxy.

Contextual Info: RP8300 SERIES Audio / Visual Electrical Housewares Medical White Goods Floor Care Appliances RoHS SPECIFICATIONS FEATURES & BENEFITS Electrical Rating: 125mA, 125VAC 100mA, 50VDC Life Expectancy: 500,000 Cycles Contact Resistance: 50mΩ Max. Insulation Resistance: 1,000MΩ Min. at 500VDC

HSMS0001

Abstract: Silicon Point Contact Mixer Diodes hsch 3486 zero bias schottky diode
Contextual Info: C haracteristics o f Schottky Barrier D iodes A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconduc­ tor. The resulting non-linear diode is similar to point contact diodes and p-n junction diodes.

5964-3898E

Abstract: Rf detector HSMS 8202 S280A sot-23 diode common anode t4 5966-0784E Diodo b4 HSMS-2862 HSMS-2813 diode hp 2800 SMD zero bias schottky diode detector
Contextual Info: w ag H EW L E T T mLHA PA CK A R D Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest Hewlett-Packard authorized distributor or representative. Technical information is also available on the WWW at:

pu01a

Abstract: 802.11n transceiver PU1A part r1G P802 802.11n
Contextual Info: SE2545A30 Dual Band 802.11n Wireless LAN Front End Preliminary Information Applications ƒ ƒ ƒ ƒ ƒ Product Description The SE2545A30 is a complete 802.11n WLAN RF front-end module providing all the functionality of the power amplifiers, power detector, T/R switch,

Contextual Info: I REVISIONS DESCRIPTION 0 INITIAL RELEASE 1 CHANGES PER DCN 402287 DATE 04/12/99 11/03/0D REV APPROVED FC/HD WR/OFG D 156 1.002 DIA THRU 2PLCS ^ J 1.000 i.005 PIN ND. .50 R TUP VIEW .756 DIA - SEALANT A CUT PIN #6 FDR MATING PART SLEEVE CDLOR 1 THERMISTOR