DEPLETION MODE POWER MOSFET Search Results

IXTA02N100D2

Abstract: depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2
Contextual Info: Depletion-Mode Power MOSFETs and Applications Abdus Sattar, IXYS Corporation Applications like constant current sources, solid-state relays, telecom switches and high voltage DC lines in power systems require N-channel Depletion-mode power MOSFET that operates as a normally “on” switch when the gate-to-source voltage is zero VGS=0V .

r08 sot223

Abstract: CPC5602
Contextual Info: CPC5602 N-Channel Depletion Mode FET INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - VDS Rating 350 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 350V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on)

Contextual Info: CPC5603 N-Channel Depletion Mode FET INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - VDS Rating 415 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on)

b0742

Abstract: *b0742 cpc5603
Contextual Info: CPC5603 N-Channel Depletion Mode FET INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - VDS Rating 415 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on)

b0742

Contextual Info: CPC5602 N-Channel Depletion Mode FET INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - VDS Rating 350 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 350V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on)

CPC5622A

Abstract: CPC5602
Contextual Info: CPC5602 N-Channel Depletion Mode FET Parameter Drain-to-Source Voltage - VDS Rating 350 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 350V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-resistance: 8 (Typical) @ 25°C

CPC5603CTR

Abstract: CPC5603C CPC5620A CPC5621A CPC5622A Depletion MOSFET 20V Depletion
Contextual Info: CPC5603 N-Channel Depletion Mode FET Parameter Drain-to-Source Voltage - VDS Rating 415 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-Resistance: 8 (Typical) @ 25°C

Contextual Info: CPC5603 N-Channel Depletion Mode FET Parameter Drain-to-Source Voltage - VDS Rating 415 Max On-Resistance - RDS on 14 Units V Ω Max Power 2.5 W Features • 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-Resistance: 8Ω (Typical) @ 25°C

CPC5602C

Abstract: CPC5602 CPC5602CTR CPC5620A CPC5621A CPC5622A Power MOSFET SOT-223 depletion N-Channel Depletion Mode FET
Contextual Info: CPC5602 N-Channel Depletion Mode FET Parameter Drain-to-Source Voltage - VDS Rating 350 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 350V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-resistance: 8 (Typical) @ 25°C

Contextual Info: CPC5603 N-Channel Depletion Mode FET Parameter Drain-to-Source Voltage - VDS Rating 415 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-Resistance: 8 (Typical) @ 25°C

IXYS

Abstract: "Power MOSFETs"
Contextual Info: Depletion-Mode D2TM Power MOSFETs Solutions for dynamic load & zero power load switch design ARE YOU READY? To battle power consumption challenges? Features applications ƒƒ “Normally-On” Operation ƒƒ Low Rds on ƒƒ Linear Mode Tolerant ƒƒ Fast Switching

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF601Q Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601Q is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET 3 „ DESCRIPTION 1 2 The UTC UF601 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.

Contextual Info: TPS9103 POWER SUPPLY FOR GaAs POWER AMPLIFIERS ^ • • • • • • • _ SLVS131 - OCTOBER 1995 On-chip Charge Pump Provides Negative Gate Bias for Depletion-Mode GaAs Power Amplifiers Buffered Clock Output to Drive Additional

mosfet amplifier

Abstract: PLCC-20 SOIC-14 UCC1839 UCC2839 UCC3839
Contextual Info: UCC1839 UCC2839 UCC3839 Secondary Side Average Current Mode Controller FEATURES • Practical Secondary Side Control of Isolated Power Supplies • Provides a Self Regulating Bias Supply From a High Input Voltage Using an External N-Channel Depletion Mode

highside switch

Abstract: charge pump mosfet driver charge pump mosfet driver external C110 TPS9103 TPS9103PWLE
Contextual Info: Power Supply for Gallium Arsenide Power Amplifiers Mini Data Sheet Description The TPS9103 is a highly integrated power supply for depletion mode GaAs power amplifiers PA in cellular handsets and other wireless communications equipment. Functional integration and low profile packaging

marking SH SOT23 mosfet

Abstract: DMZ5501 DMN5501 KP 72 marking SH SOT23 KP SOT23 DMZ5
Contextual Info: DMN5501/DMZ5501 Depletion-Mode Power MOSFET General Features Ordering Information 550V 60 Ω 200mA Package Marking DMN5501 TO-92 DMN5501 DMZ5501 SOT-23 5501 ina Part Number im Absolute Maximum Ratings Parameter TA=25℃ unless otherwise specified DMN5501

2N3823 equivalent

Abstract: 2N3822 2N3823 2n3821 2N3822 equivalent 2N3823 DATASHEET depletion mode mosfet 100 MHz 2N3822 JAN 2N3821 JAN
Contextual Info: Technical Data 2N3821 JAN, JTX, JTXV 2N3822 JAN, JTX, JTXV 2N3823 JAN, JTX, JTXV MIL-PRF QPL DEVICES POWER MOSFET N CHANNEL DEPLETION MODE Processed per MIL-PRF-19500/375 MAXIMUM RATINGS Parameters / Test Conditions Gate-Source Voltage Drain-Source Voltage

n mosfet depletion 600V

Contextual Info: SIPMOS N Channel MOSFET BSP 135 Preliminary Data • SIPMOS - depletion mode • Drain-source voltage • Continuous drain current Vfes = 600V I B = 0.100A • Drain-source on-resistance • Total power dissipation flDS on = 60Q P0 = 1,5W ( Type Marking Ordering code for

LND01K1-G

Contextual Info: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement

TPS9103

Abstract: TPS9103PWLE TPS9103Y
Contextual Info: TPS9103 POWER SUPPLY FOR GaAs POWER AMPLIFIERS SLVS131A − OCTOBER 1995 − REVISED JULY 1996 D Charge Pump Provides Negative Gate Bias D D D D D D PW PACKAGE TOP VIEW for Depletion-Mode GaAs Power Amplifiers Buffered Clock Output to Drive Additional External Charge Pump

Contextual Info: BSP 129 SIPMOS N Channel MOSFET 32E D • fl23b320 GG171Q3 5 « S I R Preliminary Data • • • • • SIEMENS/ SPCL-, SEMICONDS SIPMOS - depletion mode Drain-source voltage Continuous drain current Drain-source on-resistance Total power dissipation Vis = 240V